C&H Technology ST230CPbF User Manual

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TO-200AB (A-PUK)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 410 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case TO-200AB (A-PUK)

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

410 A

• Controlled DC power supplies

• AC controllers

ST230CPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 5700

60 Hz 5970

50 Hz 163

60 Hz 149

Typical 100 µs

410 A

55 °C

780 A

25 °C

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST230C..C

V

DRM/VRRM

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

14 1400 1500

16 1600 1700

18 1800 1900

20 2000 2100

REPETITIVE PEAK AND

OFF-STATE VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

RSM

NON-REPETITIVE

PEAK VOLTAGE

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

A

kA2s

MAXIMUM

mA

30

Document Number: 94398 For technical questions, contact: [e-mail]
Revision: 24-Aug-07 1

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ST230CPbF Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 410 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1630 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 780

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 5970

t = 10 ms

t = 8.3 ms 5000

t = 10 ms

t = 8.3 ms 148

t = 10 ms

t = 8.3 ms 105

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 880 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.69 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 0.98

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.81

T(AV)

), TJ = TJ maximum 0.92

T(AV)

), TJ = TJ maximum 0.88

T(AV)

410 (165) A

55 (85) °C

5700

4800

163

115

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94398

2 Revision: 24-Aug-07

ST230CPbF Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 410 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

GM

GM

TJ = TJ maximum, tp ≤ 5 ms 10.0

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

TJ = TJ maximum, tp ≤ 5 ms

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150 mA

T

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

T

= 125 °C 1.2 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

20

5.0

180 -

10 mA

0.25 V

UNITS

W

V

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Maximum thermal resistance,
case to heatsink

R

R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

Mounting force, ± 10 %

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.015 0.017 0.011 0.011

120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

60° 0.035 0.035 0.036 0.036

30° 0.060 0.060 0.060 0.061

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

Document Number: 94398 For technical questions, contact: [e-mail]
Revision: 24-Aug-07 3

- 40 to 125

- 40 to 150

°C

K/W

4900
(500)

N

(kg)

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

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ST230CPbF Series

Vishay High Power Products

130

120

110

100

90

80

70

60

50

40

04080 120 160 200 240 280 320

Maximum Allowable Heatsink Temperature (°C)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 100 200 300 400 500

Maximum Allowable Heatsink Temperature (°C)

Fig. 2 - Current Ratings Characteristics

ST230C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

ST230C..C Series
(Single Side Cooled)
R (DC) = 0.17 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average On-state Current (A)

Phase Control Thyristors

(Hockey PUK Version), 410 A

130

120

110

100

90

80

70

60

50

180°

DC

40

30

20

0 100 200 300 400 500 600 700 800

Maximum Allowable Heatsink Temperature (°C)

1100

1000

900

800

700

600

500

400

300

200

100

0

0 100 200 300 400 500 600

Maximum Allowable Heatsink Temperature (°C)

Fig. 5 - On-State Power Loss Characteristics

ST230C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

DC

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

180°
120°

90°
60°
30°

Conduction Angle

ST230C..C Series
T = 125°C

Average On-state Current (A)

RMS Limit

J

130

120

110

ST230C..C Series
(Double Side Cooled)
R (DC) = 0.08 K/W

thJ-hs

100

90

80

70

60

50

40

30°

60°

Conduction Angle

90°

120°

180°

30

20

0 100 200 300 400 500 600

Maximum Allowable Heatsink Temperature (°C)

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Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics

1400

1200

1000

800

DC
180°
120°

90°

60°

30°

RMS Limit

600

Conduction Period

400

200

ST230C..C Series
T = 125°C

J

0

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

Document Number: 94398

ST230CPbF Series

Phase Control Thyristors

(Hockey PUK Version), 410 A

5500

At Any Rated Load Condition And With

5000

Rated Vrrm Applied Following Surge.

4500

4000

3500

3000

ST230C..C Series

2500

2000

Peak Half Sine Wave On-state Current (A)

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Initial Tj = 125°C

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

10000

Tj = 25°C

Vishay High Power Products

6500

Maximum Non Repetitive Surge Current

6000

5500

5000

4500

4000

3500

3000

2500

2000

Peak Half Sine Wave On-state Current (A)

Fig. 8 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

ST230C..C Series

Initial Tj = 125°C

No Voltage Reapplied

Rated Vrrm Reapplied

0.01 0.1 1

Pulse Train Duration (s)

Single and Double Side Cooled

Tj = 125°C

1000

ST230C..C Series

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 3 3.5 4 4.5

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

1

Steady State Value

R = 0.17 K/W

thJ-hs

thJ-hs

(Single Side Cooled)

R = 0.08 K/W

0.1

thJ-hs

(Double Side Cooled)

(DC Operation)

0.01

ST230C..C Series

0.001

0.001 0.01 0.1 1 10

Transient Thermal Impedance Z (K/W)

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Document Number: 94398 For technical questions, contact: [e-mail]
Revision: 24-Aug-07 5

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ST230CPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for

rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs

10

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

Device code

ST 23 0 C 20 C 1 PbF

VGD

Phase Control Thyristors

(Hockey PUK Version), 410 A

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(a)

(b)

Tj=-40

Tj=25

Tj=125

°
C

IGD

Device: ST230C..C Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

°
C

°C

Frequency Limited by PG(AV)

(2)

(3)(1)

(4)

324

1

- Thyristor

2

- Essential part number

3

- 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- C = PUK case TO-200AB (A-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

51

6789

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8

- Critical dV/dt:

None = 500 V/µs (Standard selection)

L = 1000 V/µs (Special selection)

9

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95074

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6 Revision: 24-Aug-07

Document Number: 94398

DIMENSIONS in millimeters (inches)

TO-200AB (A-PUK)

Case Style TO-200AB (A-PUK)

Anode to gate
Creepage distance: 7.62 (0.30) minimum
Strike distance: 7.12 (0.28) minimum

19 (0.75)

DIA. MAX.

Outline Dimensions

Vishay High Power Products

0.3 (0.01) MIN.

13.7/14.4

(0.54/0.57)

19 (0.75)

DIA. MAX.

38 (1.50) DIA MAX.

2 holes 3.56 (0.14) x 1.83 (0.07) minimum deep

42 (1.65) MAX.

0.3 (0.01) MIN.

Gate terminal for

1.47 (0.06) DIA.
pin receptacle

6.5 (0.26)

4.75 (0.19)

25° ± 5°

28 (1.10)

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95074 For technical questions concerning discrete products, contact: [e-mail]
Revision: 01-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1