C&H Technology ST203CPbF User Manual

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TO-200AB (A-PUK)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 370 A

FEATURES

• Metal case with ceramic insulator

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• International standard case TO-200AB (A-PUK)

• Guaranteed high dI/dt

• High surge current capability

• Low thermal impedance

• High speed performance

• Lead (Pb)-free

• Designed and qualified for industrial level

370 A

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

ST203CPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

Range 20 to 30 µs

t

q

T

J

T

hs

T

hs

50 Hz 5260

60 Hz 5510

50 Hz 138

60 Hz 126

370 A

55 °C

700 A

25 °C

1000 to 1200 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM

RSM

I

DRM/IRRM

AT T

V

TYPE NUMBER

ST203C..C

V

VOLTAGE

CODE

10 1000 1100

12 1200 1300

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

V

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

40

Document Number: 94370 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 1

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ST203CPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 370 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 860 750 1340 1160 5620 5020

400 Hz 840 706 1400 1220 2940 2590

1000 Hz 700 580 1350 1170 1750 1520

2500 Hz 430 340 980 830 910 780

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50

V

DRM

Rise of on-state current dI/dt 50 - - A/µs

Heatsink temperature 40 55 40 55 40 55 °C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1380 kA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 700

t = 10 ms

t = 8.3 ms 5510

t = 10 ms

t = 8.3 ms 4630

t = 10 ms

t = 8.3 ms 126

t = 10 ms

t = 8.3 ms 89

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 600 A, TJ = TJ maximum,
t

= 10 ms sine wave pulse

p

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.22

< I < π x I

T(AV)

), TJ = TJ maximum 0.83

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

V

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 1.17

T(AV)

), TJ = TJ maximum 0.92

T(AV)

100 µs

V

= TJ maximum

J

DRM

I

TM

370 (140) A

55 (85) °C

5260

4420

138

98

1.72

A

V

A

kA2s

V

mΩ

mA

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Document Number: 94370

2 Revision: 30-Apr-08

ST203CPbF Series

Inverter Grade Thyristors

Vishay High Power Products

(Hockey PUK Version), 370 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned on current

Typical delay time t

dI/dt

d

minimum

Maximum turn-off time

maximum 30

t

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage current

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

= TJ maximum, V

T

J

= 2 x dI/dt

I

TM

TJ = 25 °C, VDM = Rated V

= Rated V

DRM

DRM

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,
I

= 300 A, commutating dI/dt = 20 A/µs

TM

V

= 50 V, tp = 500 µs, dV/dt: See table in device code

R

= TJ maximum, linear to 80 % V

T

J

higher value available on request

,

I

RRM

I

DRM

GM

G(AV)

GM

GT

GT

GD

GD

GM

GM

TJ = TJ maximum, rated V

DRM/VRRM

TJ = TJ maximum, f = 50 Hz, d % = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

applied

1000 A/µs

0.8

20

,

DRM

500 V/µs

applied 40 mA

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

µs

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.17

DC operation double side cooled 0.08

DC operation single side cooled 0.033

DC operation double side cooled 0.017

Mounting force, ± 10 %

Approximate weight 50 g

Case style See dimensions - link at the end of datasheet TO-200AB (A-PUK)

Document Number: 94370 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 3

- 40 to 125

- 40 to 150

4900
(500)

°C

K/W

N

(kg)

www.vishay.com

ST203CPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Hockey PUK Version), 370 A

ΔR

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

CONDUCTION ANGLE

180° 0.015 0.017 0.011 0.011

120° 0.018 0.019 0.019 0.019

90° 0.024 0.024 0.026 0.026

60° 0.035 0.035 0.036 0.037

30° 0.060 0.060 0.060 0.061

130

120

110

100

90

80

70

Maximum Allowable

60

Heatsink Temperature (°C)

50

40

0

50

Average On-State Current (A)

Fig. 1 - Current Ratings Characteristics

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

ST203C..C Series
(Single side cooled)

(DC) = 0.17 K/W

R

thJ-hs

Ø

Conduction angle

180°

60°

30°

100

90°

120°

150 200

250

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

when devices operate at different conduction angles than DC

thJ-hs

130

120

110

100

90

80

70

60

Heatsink Temperature (°C)

50

40

30

20

0

30°

100 200

Maximum Allowable

ST203C..C Series
(Double side cooled)
R

thJ-hs

60° 90°

Average On-State Current (A)

Fig. 3 - Current Ratings Characteristics

(DC) = 0.08 K/W

Ø

Conduction angle

180°

120°

400300 500

130

120

110

100

90

80

70

60

50

Maximum Allowable

Heatsink Temperature (°C)

40

30

20

0

30°

100 200

50 150

60°

90°

ST203C..C Series
(Single side cooled)

(DC) = 0.17 K/W

R

thJ-hs

Ø

Conduction period

180°

120°

250 300 350 400

DC

Average On-State Current (A)

Fig. 2 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

Heatsink Temperature (°C)

50

40

30

20

0

60°

30°

200 400

100 300

Maximum Allowable

ST203C..C Series
(Double side cooled)

(DC) = 0.08 K/W

R

thJ-hs

Conduction period

120°

90°

180°

500 600 700 800

Ø

DC

Average On-State Current (A)

Fig. 4 - Current Ratings Characteristics

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Document Number: 94370

4 Revision: 30-Apr-08

ST203CPbF Series

1000

900

800

700

600

500

400

300

Power Loss (W)

200

Maximum Average On-State

100

1400

1200

1000

800

600

Power Loss (W)

400

200

Maximum Average On-State

Inverter Grade Thyristors

(Hockey PUK Version), 370 A

180°
120°
90°
60°
30°

0

0

100 200

50 150

250 300 350 400 450

Average On-State Current (A)

Fig. 5 - On-State Power Loss Characteristics

DC
180°
120°
90°
60°
30°

RMS limit

0

100 200

0

300 400 500 600 700 800

Average On-State Current (A)

Fig. 6 - On-State Power Loss Characteristics

RMS limit

Ø

Conduction angle

ST203C..C Series

= 125 °C

T

J

Ø

Conduction period

ST203C..C Series

= 125 °C

T

J

Vishay High Power Products

5500

5000

4500

4000

3500

3000

On-State Current (A)

Peak Half Sine Wave

2500

2000

0.01 0.1 1

Fig. 8 - Maximum Non-Repetitive Surge Current

10 000

1000

Instantaneous On-State Current (A)

100

1.0 1.5 2.0

Fig. 9 - On-State Voltage Drop Characteristics

Maximum non-repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained

ST203C..C Series

Pulse Train Duration (s)

Single and Double Side Cooled

ST203C..C Series

TJ = 25 °C

TJ = 125 °C

3.0 3.5 4.0 4.5 5.0

2.5

Instantaneous On-State Voltage (V)

Initial TJ = 125 °C
No voltage reapplied
Rated V

RRM

reapplied

5000

4500

4000

3500

3000

On-State Current (A)

Peak Half Sine Wave

2500

2000

At any rated load condition and with
rated V

ST203C..C Series

1 10 100

Number of Equal Amplitude Half Cycle

applied following surge

RRM

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

1

ST203C..C Series

0.1

Transient Thermal

0.01

­Impedance (K/W)

thJ-hs

Z

0.001

Square Wave Pulse Duration (s)

Steady state value

= 0.17 K/W

R

thJ-hs

(Single side cooled)
R

= 0.08 K/W

thJ-hs

(Double side cooled)
(DC operation)

0.01 0.1 1 100.001

Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

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Revision: 30-Apr-08 5

ST203CPbF Series

)

)

Vishay High Power Products

250

ST203C..C Series

= 125 °C

T

J

200

150

100

50

0

- Maximum Reverse Recovery Charge (µC

rr

Q

dI/dt - Rate of Fall of On-State Current (A/µs

200406080 100

Fig. 11 - Reverse Recovered Charge Characteristics Fig. 12 - Reverse Recovery Current Characteristics

10 000

1000

1000

2500

3000

5000

Peak On-State Current (A)

10 000

100

10 100 1000 10 000

Pulse Basewidth (µs)

1500

100

ITM = 500 A

ITM = 100 A

ITM = 50 A

Snubber circuit
R
C

V

500

ST203C..C Series
Sinusoidal pulse

t

p

= 40 °C

T

C

Inverter Grade Thyristors

(Hockey PUK Version), 370 A

ITM = 300 A

ITM = 200 A

Current (A)

- Maximum Reverse Recovery

rr

I

10 000

= 47 Ω

s

= 0.22 µF

s

= 80 % V

D

400

200

DRM

50 Hz

1000

Peak On-State Current (A)

Fig. 13 - Frequency Characteristics

160

140

120

100

80

ITM = 500 A

= 300 A

I

TM

= 200 A

I

TM

= 100 A

I

TM

= 50 A

I

TM

60

40

20

0

200 40 60 80 100

ST203C..C Series
T

= 125 °C

J

dI/dt - Rate of Fall of Forward Current (A/µs)

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

400

500

1000

1500

2500

3000

5000

t

100

10 000

10 100 1000 10 000

p

D

200

100

ST203C..C Series
Sinusoidal pulse

= 55 °C

T

C

Pulse Basewidth (µs)

DRM

50 Hz

10 000

Peak On-State Current (A)

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

1000

100

C

s

= 80 % V

V

D

10 000

5000

3000

DRM

2500

400

1000

1500

50 Hz

200

500

ST203C..C Series
Trapezoidal pulse

= 40 °C

T

C

t

p

10

10 100 1000 10 000

dI/dt = 50 A/µs

100

Pulse Basewidth (µs)

10 000

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

DRM

1000

2500

3000

100

5000

10 000

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

1000

1500

400

100

500

ST203C..C Series
Trapezoidal pulse
T

C

t

p

dI/dt = 50 A/µs

50 Hz

200

= 55 °C

Fig. 14 - Frequency Characteristics

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Document Number: 94370

6 Revision: 30-Apr-08

ST203CPbF Series

10 000

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

1000

DRM

1000

2500

3000

5000

100

10 000

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

100 000

10 000

1000

100

Peak On-State Current (A)

10

10 100 1000 10 000

ST203C..C Series
Sinusoidal pulse

t

p

Pulse Basewidth (µs)

1500

0.1

400

0.2

500

t

p

0.3

Inverter Grade Thyristors

Vishay High Power Products

(Hockey PUK Version), 370 A

10 000

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

50 Hz

100

200

ST203C..C Series
Trapezoidal pulse

= 40 °C

T

C

dI/dt = 100 A/µs

Peak On-State Current (A)

Fig. 15 - Frequency Characteristics

100 000

20 joules per pulse

10

4

2

1

0.5

Peak On-State Current (A)

Fig. 16 - Maximum On-State Energy Power Loss Characteristics

C

s

= 80 % V

V

D

1000

2500

3000

100

5000

10 000

10

10 100 1000 10 000

ST203C..C Series
Rectangular pulse

t

p

dI/dt = 50 A/µs

10 000

1000

100

10

10 100 1000 10 000

DRM

400

500

100

1000

1500

ST203C..C Series
Trapezoidal pulse
T

= 55 °C

C

t

p

dI/dt = 100 A/µs

Pulse Basewidth (µs)

20 joules per pulse

0.5

0.3

0.2

0.1

3

1

Pulse Basewidth (µs)

50 Hz

200

10

5

2

100

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω

10

≤ 1 µs

t

r

≤ 1 µs

r

(a)

(b)

T

J

= 125 °C

J

T

J

= 25 °C

T
= 40 °C

(1) PGM = 10 W, tp = 20 ms

= 20 W, tp = 10 ms

(2) P

GM

= 40 W, tp = 5 ms

(3) P

GM

= 60 W, tp = 3.3 ms

(4) P

GM

1

(3)

(4)

Instantaneous Gate Voltage (V)

(1)

(2)

V

GD

I

GD

Device: ST203C..C Series

Frequency limited by P

G(AV)

0.1

0.001

0.01 0.1 1 10 100

Instantaneous Gate Current (A)

Fig. 17 - Gate Characteristics

Document Number: 94370 For technical questions, contact: [e-mail]

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Revision: 30-Apr-08 7

ST203CPbF Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 20 3 C 12 C H H 1 - P

324

1 - Thyristor

2 - Essential part number

3 - 3 = Fast turn-off

4 - C = Ceramic PUK

5 - Voltage code x 100 = V

6 - C = PUK case TO-200AB (A-PUK)

7 - Reapplied dV/dt code (for t

8 -t

9 - 0 = Eyelet terminals

10

11

code

q

(gate and auxiliary cathode unsoldered leads)

1 = Fast-on terminals

(gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals

(gate and auxiliary cathode soldered leads)

3 = Fast-on terminals

(gate and auxiliary cathode soldered leads)

- Critical dV/dt:

None = 500 V/µs (standard value)

L = 1000 V/µs (special selection)

- P = Lead (Pb)-free

Inverter Grade Thyristors

(Hockey PUK Version), 370 A

51

6 7 8 9 10 11

(see Voltage Ratings table)

RRM

test condition)

q

t

q

* Standard part number.
All other types available only on request.

dV/dt - tq combinations available

dV/dt (V/µs) 20 50 100 200 400

20

(µs)

25
30 CH DH EH FH HH

CK DK EK
CJ DJ EJ FJ* -

--

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95074

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8 Revision: 30-Apr-08

Document Number: 94370