C&H Technology ST183SPbF User Manual
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Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 195 A
FEATURES
• Center amplifying gate
ST183SPbF Series
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
TO-209AB (TO-93)
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
PRODUCT SUMMARY
I
)195 A
T(AV
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 4900
60 Hz 5130
50 Hz 120
60 Hz 110
195 A
85 °C
306
A
kA2s
400 to 800 V
15 to 20 µs
- 40 to 125 °C
RoHS
COMPLIANT
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
ST183S
Document Number: 94369 For technical questions, contact: ind-modules@vishay.com
Revision: 30-Apr-08 1
VOLTAGE
CODE
04 400 500
08 800 900
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
MAXIMUM
mA
40
www.vishay.com
ST183SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 195 A
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 570 370 900 610 7040 5220
400 Hz 560 360 940 630 3200 2280
1000 Hz 500 300 925 610 1780 1200
2500 Hz 340 190 760 490 880 560
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 47 /0.22 47/0.22 47/0.22 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one half cycle,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1200 kA2√s
Maximum peak on-state voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
T(AV)
I
TSM
T(TO)1
T(TO)2
180° conduction, half sine wave
DC at 74 °C case temperature 306
t = 10 ms
t = 8.3 ms 5130
t = 10 ms
t = 8.3 ms 4310
t = 10 ms
t = 8.3 ms 110
t = 10 ms
t = 8.3 ms 78
ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.80
TM
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
t1
(I > π x I
t2
TJ = 25 °C, IT > 30 A 600
H
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
L
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 1.45
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 0.58
T(AV)
I
TM
V
DRM
RRM
Sinusoidal half wave,
initial T
RRM
), TJ = TJ maximum 1.40
T(AV)
), TJ = TJ maximum 0.67
T(AV)
100 µs
= TJ maximum
J
V
DRM
I
TM
195 A
85 °C
4900
4120
120
85
A
V
A
kA2s
VLow level value of threshold voltage V
mΩ
mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94369
2 Revision: 30-Apr-08
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