C&H Technology ST183SPbF User Manual

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Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 195 A

FEATURES

• Center amplifying gate

ST183SPbF Series

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

TO-209AB (TO-93)

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

PRODUCT SUMMARY

I

)195 A

T(AV

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 4900

60 Hz 5130

50 Hz 120

60 Hz 110

195 A

85 °C

306

A

kA2s

400 to 800 V

15 to 20 µs

- 40 to 125 °C

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST183S

Document Number: 94369 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 1

VOLTAGE

CODE

04 400 500

08 800 900

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

MAXIMUM

mA

40

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ST183SPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 195 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 570 370 900 610 7040 5220

400 Hz 560 360 940 630 3200 2280

1000 Hz 500 300 925 610 1780 1200

2500 Hz 340 190 760 490 880 560

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50

V

DRM

Rise of on-state current dI/dt 50 - - A/µs

Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 47 /0.22 47/0.22 47/0.22 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1200 kA2√s

Maximum peak on-state voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

T(AV)

I

TSM

T(TO)1

T(TO)2

180° conduction, half sine wave

DC at 74 °C case temperature 306

t = 10 ms

t = 8.3 ms 5130

t = 10 ms

t = 8.3 ms 4310

t = 10 ms

t = 8.3 ms 110

t = 10 ms

t = 8.3 ms 78

ITM = 600 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 1.80

TM

(16.7 % x π x I
(I > π x I
(16.7 % x π x I

t1

(I > π x I

t2

TJ = 25 °C, IT > 30 A 600

H

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

L

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.45

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.58

T(AV)

I

TM

V

DRM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 1.40

T(AV)

), TJ = TJ maximum 0.67

T(AV)

100 µs

= TJ maximum

J

V

DRM

I

TM

195 A

85 °C

4900

4120

120

85

A

V

A

kA2s

VLow level value of threshold voltage V

mΩ

mA

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Document Number: 94369

2 Revision: 30-Apr-08

ST183SPbF Series

Inverter Grade Thyristors

Vishay High Power Products

(Stud Version), 195 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

dI/dt

d

minimum

Maximum turn-off time

maximum 20

t

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and off-state leakage current

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

= TJ maximum, V

T

J

= Rated V

DRM

DRM

ITM = 2 x dI/dt

TJ = 25 °C, VDM = Rated V

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,
I

= 300 A, commutating dI/dt = 20 A/µs

TM

V

= 50 V, tp = 500 µs, dV/dt: 200 V/µs

R

= TJ maximum, linear to 80 % V

T

J

higher value available on request

,

I

RRM

I

DRM

GM

G(AV)

GM

GT

GT

GD

GD

TJ = TJ maximum, rated V

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = TJ maximum VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM/VRRM

applied

DRM

1000 A/µs

1.1

15

,

DRM

500 V/µs

applied 40 mA

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

µs

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.105

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 280 g

Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)

Document Number: 94369 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 3

- 40 to 125

- 40 to 150

31

(275)

24.5

(210)

°C

K/W

N · m

(lbf · in)

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ST183SPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 195 A

ΔR

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

CONDUCTION ANGLE

180° 0.016 0.012

120° 0.019 0.020

90° 0.025 0.027

60° 0.036 0.037

30° 0.060 0.060

130

120

110

100

Maximum Allowable

90

Case Temperature (°C)

80

0

40 80 120 160

20 60 100 140 180 200

Average On-State Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

ST183S Series

(DC) = 0.105 K/W

R

thJC

60 °C

30 °C

SINUSOIDAL

CONDUCTION

Ø

Conduction angle

120 °C

90 °C

180 °C

RECTANGULAR

CONDUCTION

when devices operate at different conduction angles than DC

thJC

130

120

110

100

90

Maximum Allowable

Case Temperature (°C)

80

70

TEST CONDITIONS UNITS

T

= TJ maximum K/W

J

ST183S Series

(DC) = 0.105 K/W

R

thJC

Conduction period

60°

90°

180°

120°

50 150

0

30°

100 200

Average On-State Current (A)

Ø

DC

250 300 350

350

300

250

200

150

Power Loss (W)

100

50

Maximum Average On-State

0

20 6040 80

0

180°
120°
90°
60°
30°

RMS limit

Ø

Conduction angle

ST183S Series

= 125 °C

T

J

100 120 140 160 180 200

Average On-State Current (A)

350

300

250

200

150

Power Loss (W)

100

50

Maximum Average On-State

0.1 K/W

R

thSA

= 0.08 K/W - ΔR

50 10075

125

0

0.16 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.8 K/W

1.2 K/W

25

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

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Document Number: 94369

4 Revision: 30-Apr-08

ST183SPbF Series

500

450

400

350

300

250

200

150

Maximum Average

100

On-State Power Loss (W)

50

4500

4000

3500

3000

0

0

RMS limit

Inverter Grade Thyristors

DC
180°
120°
90°
60°
30°

Conduction period

ST183S Series

= 125 °C

T

J

100 200

50 150

Average On-State Current (A)

At any rated load condition and with
rated V

applied following surge

RRM

250 300 350

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

(Stud Version), 195 A

500

450

400

350

300

250

Ø

Fig. 4 - On-State Power Loss Characteristics

200

150

Power Loss (W)

100

Maximum Average On-State

50

0

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

10 000

1000

Vishay High Power Products

R

thSA

= 0.8 K/W - ΔR

0.1 K/W

0.16 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.8 K/W

1.2 K/W

ST183S Series

TJ = 125 °C

TJ = 25 °C

On-State Current (A)

Peak Half Sine Wave

2500

ST183S Series

2000

1 10 100

Number of Equal Amplitude Half Cycle

Fig. 5 - Maximum Non-Repetitive Surge Current

5000

4500

4000

3500

3000

On-State Current (A)

Peak Half Sine Wave

2500

ST183S Series

2000

0.01 0.1 1

Fig. 6 - Maximum Non-Repetitive Surge Current

Current Pulses (N)

Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained

Initial TJ = 125 °C
No voltage reapplied
Rated V

RRM

reapplied

Pulse Train Duration (s)

Instantaneous On-State Current (A)

100

1.0 1.5 2.0 2.5 3.0 3.5 4.0

Instantaneous On-State Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

1

Steady state value

= 0.105 K/W

R

thJC

(DC operation)

0.1

Transient Thermal

0.01

­Impedance (K/W)

thJC

Z

0.001

0.01 0.1 1 100.001

ST183S Series

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

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Revision: 30-Apr-08 5

ST183SPbF Series

Vishay High Power Products

250

ST183S Series

= 125 °C

T

200

J

150

100

- Maximum Reverse

rr

Recovery Charge (µC)

50

Q

0

200 406080100

dI/dt - Rate of Fall of On-State Current (A/µs)

Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics

10 000

1000

1000

1500

2500

3000

ITM = 50 A

400

500

I

I

I

TM

Snubber circuit
R
C
V

200

Inverter Grade Thyristors

(Stud Version), 195 A

= 500 A

TM

= 300 A

I

TM

= 200 A

TM

= 100 A

= 47 Ω

s

= 0.22 µF

s

= 80 % V

D

100

DRM

50 Hz

160

140

120

100

80

60

Current (A)

40

- Maximum Reverse Recovery
I

20

rr

0

200 40 60 80 100

dI/dt - Rate of Fall of On-State Current (A/µs)

10 000

1000

1000

1500

2500

ST183S Series
T

500

I

I

TM

= 125 °C

J

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

100

400

200

= 500 A

TM

= 300 A

I

TM

= 200 A

I

TM

= 100 A

I

TM

= 50 A

DRM

50 Hz

5000

Peak On-State Current (A)

100

10 100 1000 10 000

Pulse Basewidth (µs)

10 000

1000

100

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

3000

5000

10 000

DRM

1500

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

500

2500

200

t

t

p

1000

p

ST183S Series
Sinusoidal pulse

= 60 °C

T

C

50 Hz

100

400

ST183S Series
Trapezoidal pulse

= 60 °C

T

C

dI/dt = 50 A/µs

Peak On-State Current (A)

100

Fig. 11 - Frequency Characteristics

10 000

1000

100

Peak On-State Current (A)

10

Fig. 12 - Frequency Characteristics

3000

5000

ST183S Series
Sinusoidal pulse

t

T

p

= 85 °C

C

10 100 1000 10 000

Pulse Basewidth (µs)

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

2500

5000

3000

DRM

1000

1500

400

500

100

50 Hz

200

ST183S Series

10 000

Trapezoidal pulse
T

C

t

p

dI/dt = 50 A/µs

= 85 °C

10 100 1000 10 000

Pulse Basewidth (µs)

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Document Number: 94369

6 Revision: 30-Apr-08

ST183SPbF Series

10 000

1000

100

Snubber circuit

= 47 Ω

R

s

C

= 0.22 µF

s

V

= 80 % V

D

2500

3000

5000

10 000

DRM

1000

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

100 000

10 000

1000

100

Peak On-State Current (A)

10

t

p

10 100 1000 10 000

0.5

0.3

0.2

0.1

ST183S Series
Sinusoidal pulse

Pulse Basewidth (µs)

1500

400

500

t

p

1

Inverter Grade Thyristors

Vishay High Power Products

(Stud Version), 195 A

10 000

50 Hz

200

100

ST183S Series
Trapezoidal pulse

= 60 °C

T

C

dI/dt = 100 A/µs

Peak On-State Current (A)

Fig. 13 - Frequency Characteristics

100 000

20 joules per pulse

5

10

2

10 000

Peak On-State Current (A)

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

1000

100

5000

10 000

10

10 100 1000 10 000

1000

100

10

10 100 1000 10 000

DRM

1000

2500

1500

3000

Pulse Basewidth (µs)

ST183S Series
Rectangular pulse

t

dI/dt = 50 A/µs

p

0.3

0.1

0.2

Pulse Basewidth (µs)

500

0.5

400

t

p

50 Hz

200

100

ST183S Series
Trapezoidal pulse

= 85 °C

T

C

dI/dt = 100 A/µs

20 joules per pulse

10

5

2

1

100

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω

10

≤ 1 µs

t

r

≤ 1 µs

r

(b)

T

J

= 125 °C

T

J

= 25 °C

(a)

T

J

= 40 °C

(1) PGM = 10 W, tp = 20 ms

= 20 W, tp = 10 ms

(2) P

GM

= 40 W, tp = 5 ms

(3) P

GM

= 60 W, tp = 3.3 ms

(4) P

GM

1

V

Instantaneous Gate Voltage (V)

(1)

GD

I

GD

Device: ST183S Series

Frequency limited by P

(2)

(3) (4)

G(AV)

0.1

0.001

0.01 0.1 1 10 100

Instantaneous Gate Current (A)

Fig. 15 - Gate Characteristics

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Revision: 30-Apr-08 7

ST183SPbF Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 18 3 S 08 P F K 0 PbF

324

1 - Thyristor

2 - Essential part number

3 - 3 = Fast turn-off

4 - S = Compression bonding stud

5 - Voltage code x 100 = V

6 - P = Stud base 3/4" 16UNF-2A

7 - Reapplied dV/dt code (for t

8 -t

9 - 0 = Eyelet terminals

code

q

(gate and auxiliary cathode leads)

1 = Fast-on terminals

(gate and auxiliary cathode leads)

Inverter Grade Thyristors

(Stud Version), 195 A

51

678910

(see Voltage Ratings table)

RRM

test condition)

q

dV/dt - tq combinations available

dV/dt (V/µs) 200

q

20

15

(µs)

t

FL

FK

10

- Lead (Pb)-free

Note: For metric device M16 x 1.5 contact factory

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95077

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8 Revision: 30-Apr-08

Document Number: 94369