C&H Technology ST180SPbF User Manual

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TO-209AB (TO-93)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 200 A

FEATURES

• Center amplifying gate

• International standard case TO-209AB (TO-93)

• Hermetic metal case with ceramic insulator
(Also available with glass-metal seal up to 1200 V)

• Compression bonded encapsulation for heavy duty
operations such as severe thermal cycling

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

200 A

• Controlled DC power supplies

• AC controllers

ST180SPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 5000

60 Hz 5230

50 Hz 125

60 Hz 114

Typical 100 µs

200 A

85 °C

314 A

400 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE
NUMBER

ST180S

V

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

30

Document Number: 94397 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 1

www.vishay.com

ST180SPbF Series

Vishay High Power Products

Phase Control Thyristors

(Stud Version), 200 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1250 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Maximum (typical) latching current I

T(AV)

180° conduction, half sine wave

DC at 76 °C case temperature 314

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 5230

t = 10 ms

t = 8.3 ms 4400

t = 10 ms

t = 8.3 ms 114

t = 10 ms

t = 8.3 ms 81

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 570 A, TJ = 125 °C, tp = 10 ms sine pulse 1.75 V

TJ = TJ maximum, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.14

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.14

T(AV)

), TJ = TJ maximum 1.08

T(AV)

), TJ = TJ maximum 1.18

T(AV)

200 A

85 °C

5000

4200

125

88

600

1000 (300)

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 300 A, TJ = TJ maximum, dI/dt = 20 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.0
µs

100

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise
of off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 30 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94397

2 Revision: 30-Apr-08

ST180SPbF Series

Phase Control Thyristors

Vishay High Power Products

(Stud Version), 200 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 10

TJ = TJ maximum, f = 50 Hz, d% = 50 2.0

TJ = TJ maximum, tp ≤ 5 ms 3.0 A

GM

TJ = TJ maximum, tp ≤ 5 ms

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 90 150

J

T

= 125 °C 40 -

J

TJ = - 40 °C 2.9 -

= 25 °C 1.8 3.0

T

J

T

= 125 °C 1.2 -

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

DRM

anode to

cathode applied

VALUES

TYP. MAX.

180 -

0.25 V

UNITS

20

5.0

mAT

10 mA

W

V

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

R

R

T

J

Stg

thJC

thC-hs

DC operation 0.105

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 280 g

Case style See dimensions - link at the end of datasheeet TO-209AB (TO-93)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION

TEST CONDITIONS UNITS

180° 0.015 0.012

120° 0.019 0.020

T

90° 0.025 0.027

= TJ maximum K/W

J

60° 0.036 0.037

30° 0.060 0.060

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

Document Number: 94397 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 3

- 40 to 125

- 40 to 150

31

(275)

24.5

(210)

°C

K/W

N · m

(lbf ⋅ in)

www.vishay.com

ST180SPbF Series

Vishay High Power Products

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C)

0 40 80 120 160 200 240

ST1 80 S Se r i e s
R (DC) = 0.105 K/ W

thJC

Conduc tion Ang le

30°

60°

90°

120°

180°

Ave ra ge O n-state Curren t (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

350

300

250

200

180°
120°

90°
60°
30°

RM S Lim i t

150

100

50

0

Maximum Average On-state Power Loss (W)

0 40 80 120 160 200 24 0

Average On-state Current (A)

Phase Control Thyristors

(Stud Version), 200 A

130

120

110

100

90

80

70

Maximum Allowable Case Temperature (°C)

0 50 100 150 200 250 300 350

R

t

h

S

0.

0

.

1

6

K

0

.

2

K

/

W

0

.

3

K

/

W

0

.

4

K

/

W

0

.

5

K

/

Conduction Angle

ST1 8 0 S Se ri e s
T = 1 2 5° C

J

W

0

.

8

K

/

W

1

.

2

K

/

W

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 3 - On-State Power Loss Characteristics

A

1

=

K/

0

W

.

/

W

0

8

K

/

W

­D

ST1 8 0S Se r i e s
R (DC) = 0.105 K/ W

thJC

Conduction Period

30°

60°

90°

120°

180°

Av era ge On- sta t e Curre nt ( A)

e

l

t

a

R

DC

500

450

400

350

300

250

200

150

100

50

0

Maximum Average On-state Power Loss (W)

DC
180°
120°

90°
60°
30°

RM S Li m it

Conduc tion Period

ST180S Se ries
T = 1 2 5° C

J

0 40 80 120 160 200 240 280 320

25 50 75 100 125

Average On-state Current (A)

R

t

h

S

A

0

=

.

1

0

K

.

0

/

8

W

0

.

1

6

0

.

2

K

0

.

3

0

.

4

0

.

5

0

.

8

1

.

2

K

K

/

K

/

/

W

K

/

K

/

K

/

K/

/

W

-

W

W

W

W

W

W

D

e

l

t

a

R

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94397

4 Revision: 30-Apr-08

ST180SPbF Series

Phase Control Thyristors

(Stud Version), 200 A

4800

At Any Rat ed Loa d Cond ition And With

Ra te d V Ap p lied Follow ing Surg e .

4400

4000

3600

3200

2800

2400

ST1 8 0S Se r i e s

Pea k Ha l f Sine Wave On-st ate Current (A)

2000

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

RRM

Initia l T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

10000

Vishay High Power Products

5500

Maximum Non Repetitive Surge Current

5000

4500

4000

3500

3000

2500

Peak Half Sine Wave On-state Current (A)

2000

Fig. 6 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Cont rol

Of Conduction May Not Be Maintained.

ST180S Serie s

0.01 0.1 1

Pulse Tra in D ura t io n ( s)

Initi al T = 125°C

No Volt a ge Rea pp lied
Ra t e d V Re a p p l ie d

J

RRM

1

thJC

0.1

0.01

1000

Instantaneous On-state Current (A)

100

Steady State Value

R = 0.105 K/ W

thJC

(DC Operation)

T = 25 ° C

J

T = 125°C

J

ST1 8 0 S Se r i e s

0.5 1 1.5 2 2.5 3 3.5 4 4. 5 5 5.5 6

Instantaneous On-state Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

ST1 8 0 S Se r i e s

Transient Thermal Impedance Z (K/W)

0.001

0.001 0.01 0.1 1 10

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

Characteristics

thJC

Document Number: 94397 For technical questions, contact: [e-mail]

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Revision: 30-Apr-08 5

ST180SPbF Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rat e d di/ d t : 10V, 10ohm s

10

tr<=1 µs

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

Phase Control Thyristors

(Stud Version), 200 A

(a)

(b)

Tj = - 4 0 ° C

Tj = 25 ° C

Tj = 12 5 ° C

IGD

D e v i c e : ST18 0S Se r i es

In st a n t a n e o u s G a t e C u r r e n t (A )

Fig. 9 - Gate Characteristics

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms

(1) (2)

Frequency Limited by PG(AV)

(3)

(4)

Device code

ST 18 0 S 20 P 0 PbF-

324

1

- Thyristor

2

- Essential part number

3

- 0 = Converter grade

4

- S = Compression bonding stud

5

- Voltage code x 100 = V

6

- P = Stud base 3/4"-16UNF2A threads

7

- 0 = Eyelet terminals (gate and auxiliary cathode leads)

51

6789

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode leads)

- V = Glass-metal seal (only up to 1200 V)

8

None = Ceramic housing (over 1200 V)

- Lead (Pb)-free

9

Note: For metric device M16 x 1.5 contact factory

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95082

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 30-Apr-08

Document Number: 94397