C&H Technology ST173SPbF User Manual

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TO-209AB (TO-93)

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 175 A

FEATURES

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Lead (Pb)-free

• Designed and qualified for industrial level

ST173SPbF Series

RoHS

COMPLIANT

PRODUCT SUMMARY

I

T(AV)

175 A

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

Range 15 to 25 µs

q

T

J

T

C

50 Hz 4680

60 Hz 4900

50 Hz 110

60 Hz 100

175 A

85 °C

275

1000 to 1200 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

A

kA2s

VOLTAGE RATINGS

V

TYPE NUMBER

ST173S

Document Number: 94367 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

VOLTAGE

CODE

10 1000 1100

12 1200 1300

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

www.vishay.com

MAXIMUM

mA

40

ST173SPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 175 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 500 320 790 550 4510 3310

400 Hz 450 290 810 540 1970 1350

1000 Hz 330 190 760 490 1050 680

2500 Hz 170 80 510 300 480 280

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50

V

DRM

V

Rise of on-state current dI/dt 50 - - A/µs

Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

I

T(AV)

T(RMS)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave

DC at 75 °C case temperature 275

t = 10 ms

t = 8.3 ms 4900

t = 10 ms

t = 8.3 ms 4120

t = 10 ms

t = 8.3 ms 100

t = 10 ms

t = 8.3 ms 71

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 600 A, TJ = TJ maximum,

= 10 ms sine wave pulse

t

p

(16.7 % x π x I
(I > π x I

T(AV)

(16.7 % x π x I
(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.58

< I < π x I

T(AV)

), TJ = TJ maximum 0.82

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

), TJ = TJ maximum 1.55

T(AV)

), TJ = TJ maximum 0.87

T(AV)

100 µs

V

= TJ maximum

J

DRM

I

TM

175 A

85 °C

4680

3940

110

77

2.07

A

V

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of rise
of turned on current

Typical delay time t

dI/dt

d

minimum

Maximum turn-off time

maximum 25

t

q

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2 Revision: 29-Apr-08

= TJ maximum, V

T

J

= Rated V

DRM

DRM

ITM = 2 x dI/dt

TJ = 25 °C, VDM = Rated V

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum,
I

= 300 A, commutating dI/dt = 20 A/µs

TM

= 50 V, tp = 500 µs, dV/dt: See table in device code

V

R

1000 A/µs

1.1

15

µs

Document Number: 94367

ST173SPbF Series

Inverter Grade Thyristors

Vishay High Power Products

(Stud Version), 175 A

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

= TJ maximum, linear to 80 % V

T

Maximum critical rate of rise of off-state voltage dV/dt

I

Maximum peak reverse and off-state leakage current

RRM

I

DRM

J

higher value available on request

,

TJ = TJ maximum, rated V

DRM/VRRM

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

applied

,

DRM

500 V/µs

applied 40 mA

60

10

10 A

20

5

200 mA

3V

20 mA

0.25 V

W

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

Stg

thJC

thCS

J

DC operation 0.105

Mounting surface, smooth, flat and greased 0.04

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 280 g

Case style See dimensions - link at the end of datasheet TO-209AB (TO-93)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL

CONDUCTION

RECTANGULAR

CONDUCTION

TEST CONDITIONS UNITS

180° 0.016 0.012

120° 0.019 0.020

T

90° 0.025 0.027

= TJ maximum K/W

J

60° 0.036 0.037

30° 0.060 0.060

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

31

(275)

24.5

(210)

(lbf · in)

°C

K/W

N · m

Document Number: 94367 For technical questions, contact: [e-mail]

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Revision: 29-Apr-08 3

ST173SPbF Series

Vishay High Power Products

130

120

110

100

Maximum Allowable

90

Case Temperature (°C)

80

350

300

250

200

150

Power Loss (W)

100

50

Maximum Average On-State

30 °C

0

40 80 120 160

20 60 100 140 180

Average On-State Current (A)

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

180°
120°
90°
60°
30°

0

20 6040 80

0

Average On-State Current (A)

ST173S Series

(DC) = 0.105 K/W

R

thJC

Conduction angle

60 °C

90 °C 180 °C

Conduction angle

ST173S Series

= 125 °C

T

J

100 120 140 160 180

Inverter Grade Thyristors

(Stud Version), 175 A

130

120

Ø

120 °C

RMS limit

Ø

Fig. 3 - On-State Power Loss Characteristics

110

100

90

Maximum Allowable

Case Temperature (°C)

80

70

350

300

250

200

150

Power Loss (W)

100

50

Maximum Average On-State

Maximum Allowable Ambient Temperature (°C)

0

0

0.3 K/W

1.2 K/W

25

ST173S Series

(DC) = 0.105 K/W

R

thJC

Conduction period

90°

30° 60°

80 160

40 120

180°

120°

Average On-State Current (A)

0.1 K/W

R

0.16 K/W

0.2 K/W

0.4 K/W

0.5 K/W

0.8 K/W

thSA

= 0.08 K/W - ΔR

50 10075

Ø

DC

200 240 280

125

500

400

300

200

Maximum Average

100

On-State Power Loss (W)

0

RMS limit

0

120°

90°

80 160

40 120

30°

60°

180°

Conduction period

ST173S Series

= 125 °C

T

J

200 240 280

Average On-State Current (A)

DC

Ø

500

400

300

200

Power Loss (W)

100

Maximum Average On-State

0

R

thSA

= 0.8 K/W - ΔR

0.1 K/W

0.16 K/W

0.2 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.8 K/W

1.2 K/W

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

Fig. 4 - On-State Power Loss Characteristics

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Document Number: 94367

4 Revision: 29-Apr-08

ST173SPbF Series

4500

4000

3500

3000

On-State Current (A)

Peak Half Sine Wave

2500

2000

At any rated load condition and with
rated V

ST173S Series

1 10 100

Number of Equal Amplitude Half Cycle

Fig. 5 - Maximum Non-Repetitive Surge Current

5000

4500

4000

3500

3000

2500

On-State Current (A)

Peak Half Sine Wave

2000

1500

ST173S Series

0.01 0.1 1

Fig. 6 - Maximum Non-Repetitive Surge Current

Inverter Grade Thyristors

(Stud Version), 175 A

applied following surge.

RRM

Current Pulses (N)

Maximum non-repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained.

Pulse Train Duration (s)

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Initial TJ = 125 °C
No voltage reapplied
Rated V

RRM

reapplied

Vishay High Power Products

1

Steady state value

= 0.105 K/W

R

thJC

(DC operation)

0.1

(K/W)

thJC

0.01

Transient Thermal

Impedance Z

0.001

0.01 0.1 1 100.001

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

250

ST173S Series

= 125 °C

T

200

150

100

- Maximum Reverse

rr

Recovery Charge (µC)

Q

J

50

0

200 406080100

dI/dt - Rate of Fall of On-State Current (A/µs)

Fig. 9 - Reverse Recovered Current Characteristics

ST173S Series

Characteristics

thJC

I

TM

I

I

TM

= 100 A

I

TM

ITM = 50 A

= 500 A

= 300 A

TM

= 200 A

10 000

ST173S Series

1000

Instantaneous On-State Current (A)

100

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5

Instantaneous On-State Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

TJ = 125 °C

TJ = 25 °C

160

140

120

100

80

60

- Maximum Reverse

40

rr

Recovery Current (A)

I

20

0

I

TM = 500 A

I

TM = 300 A

I

TM = 200 A

I

TM = 100 A

I

TM = 50 A

ST173S Series
T

= 125 °C

J

200 40 60 80 100

dI/dt - Rate of Fall of On-State Current (A/µs)

Fig. 10 - Reverse Recovery Current Characteristics

Document Number: 94367 For technical questions, contact: [e-mail]

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Revision: 29-Apr-08 5

ST173SPbF Series

Vishay High Power Products

10 000

1000

3000

1000

1500

2000

2500

Peak On-State Current (A)

100

10 100 1000 10 000

Pulse Basewidth (µs)

10 000

1000

100

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

5000

DRM

1500

2500

3000

500

1000

2000

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

400

500

ST173S Series
Sinusoidal pulse

t

T

p

400

ST173S Series
Trapezoidal pulse
T

C

t

p

dI/dt = 50 A/µs

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

V

D

200

= 60 °C

C

= 60 °C

Inverter Grade Thyristors

(Stud Version), 175 A

= 80 % V

200

100

DRM

50 Hz

Fig. 11 - Frequency Characteristics

50 Hz

100

Fig. 12 - Frequency Characteristics

10 000

1000

Peak On-State Current (A)

3000

1000

1500

2000

2500

100

10 100 1000 10 000

Pulse Basewidth (µs)

10 000

1000

1500

2000

100

Peak On-State Current (A)

10

2500

3000

5000

10 100 1000 10 000

Pulse Basewidth (µs)

500

1000

500

t

p

400

t

p

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

50 Hz

100

200

400

ST173S Series
Sinusoidal pulse

= 85 °C

T

C

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

50 Hz

100

200

ST173S Series
Trapezoidal pulse

= 85 °C

T

C

dI/dt = 50 A/µs

DRM

DRM

10 000

1000

2000

2500

100

5000

10 000

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

1500

1000

500

400

t

p

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

200

DRM

50 Hz

100

ST173S Series
Trapezoidal pulse

= 60 °C

T

C

dI/dt = 100 A/µs

10 000

1000

1500

5000

10 000

2000

2500

100

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

1000

500

400

t

p

Snubber circuit

= 47 Ω

R

s

= 0.22 µF

C

s

= 80 % V

V

D

200

100

DRM

50 Hz

ST173S Series
Trapezoidal pulse

= 85 °C

T

C

dI/dt = 100 A/µs

Fig. 13 - Frequency Characteristics

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Document Number: 94367

6 Revision: 29-Apr-08

ST173SPbF Series

100 000

10 000

1000

100

Peak On-State Current (A)

t

10

p

10 100 1000 10 000

1

0.5

0.3

0.2

0.1

ST173S Series
Sinusoidal pulse

Pulse Basewidth (µs)

100

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω

10

≤ 1 µs

t

r

1

Instantaneous Gate Voltage (V)

0.1

0.001

4

2

Inverter Grade Thyristors

Vishay High Power Products

(Stud Version), 175 A

100 000

20 joules per pulse

7.5

10 000

1000

100

Peak On-State Current (A)

10

10 100 1000 10 000

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

≤ 1 µs

r

(a)

(b)

T

J

T

J

= 25 °C

= 40 °C

Frequency limited by P

T

J

= 125 °C

V

GD

I

GD

Device: ST173S Series

0.01 0.1 1 10 100

Instantaneous Gate Current (A)

Fig. 15 - Gate Characteristics

ST173S Series
Rectangular pulse

t

dI/dt = 50 A/µs

p

0.5

0.4

0.3

0.2

0.1

Pulse Basewidth (µs)

(1) PGM = 10 W, tp = 20 ms

= 20 W, tp = 10 ms

(2) P

GM

(3) P

= 40 W, tp = 5 ms

GM

(4) P

= 60 W, tp = 3.3 ms

GM

(1) (2)

G(AV)

1

20 joules per pulse

5

3

2

(3)

10

(4)

Document Number: 94367 For technical questions, contact: [e-mail]

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Revision: 29-Apr-08 7

ST173SPbF Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 17 3 S 12 P F K 0 - PbF

324

1 - Thyristor

2 - Essential part number

3 - 3 = Fast turn-off

4 - S = Compression bonding stud

5 - Voltage code x 100 = V

6 - P = Stud base 3/4" 16UNF-2A

M = Stud base metric threads M16 x 1.5

7 - Reapplied dV/dt code (for t

8 -t

9 - 0 = Eyelet terminals

10

11

code

q

(gate and aux. cathode leads)

1 = Fast-on terminals
(gate and aux. cathode leads)

2 = Flag terminals (for cathode and gate terminals)

- Critical dV/dt:
None = 500 V/µs (standard value)
L = 1000 V/µs (special selection)

- Lead (Pb)-free

Inverter Grade Thyristors

(Stud Version), 175 A

51

6 7 8 9 10 11

(see Voltage Ratings table)

RRM

test condition)

q

t

* Standard part number.
All other types available only on request.

dV/dt - tq combinations available

dV/dt (V/µs) 20 50 100 200 400

---

CL
CP
CK

CJ

DP

EP

DK

EK

DJ

EJ

DH

-

EH

q

(µs)

15
18
20

25
30

FP*

FK*

HK

HJ

FHFJHH

-

-

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95079

www.vishay.com For technical questions, contact: [e-mail]
8 Revision: 29-Apr-08

Document Number: 94367