C&H Technology ST173SPbF User Manual
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TO-209AB (TO-93)
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 175 A
FEATURES
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
• Compression bonding
• Lead (Pb)-free
• Designed and qualified for industrial level
ST173SPbF Series
RoHS
COMPLIANT
PRODUCT SUMMARY
I
T(AV)
175 A
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
t
Range 15 to 25 µs
q
T
J
T
C
50 Hz 4680
60 Hz 4900
50 Hz 110
60 Hz 100
175 A
85 °C
275
1000 to 1200 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
A
kA2s
VOLTAGE RATINGS
V
TYPE NUMBER
ST173S
Document Number: 94367 For technical questions, contact: ind-modules@vishay.com
Revision: 29-Apr-08 1
VOLTAGE
CODE
10 1000 1100
12 1200 1300
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
AT T
= TJ MAXIMUM
J
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MAXIMUM
mA
40
ST173SPbF Series
Vishay High Power Products
Inverter Grade Thyristors
(Stud Version), 175 A
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 500 320 790 550 4510 3310
400 Hz 450 290 810 540 1970 1350
1000 Hz 330 190 760 490 1050 680
2500 Hz 170 80 510 300 480 280
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
V
Rise of on-state current dI/dt 50 - - A/µs
Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
Maximum peak, one half cycle,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2√s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
I
T(AV)
T(RMS)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
180° conduction, half sine wave
DC at 75 °C case temperature 275
t = 10 ms
t = 8.3 ms 4900
t = 10 ms
t = 8.3 ms 4120
t = 10 ms
t = 8.3 ms 100
t = 10 ms
t = 8.3 ms 71
No voltage
reapplied
100 % V
reapplied
No voltage
reapplied
100 % V
reapplied
ITM = 600 A, TJ = TJ maximum,
= 10 ms sine wave pulse
t
p
(16.7 % x π x I
(I > π x I
T(AV)
(16.7 % x π x I
(I > π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 1.58
< I < π x I
T(AV)
), TJ = TJ maximum 0.82
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
DRM
I
TM
RRM
Sinusoidal half wave,
initial T
RRM
), TJ = TJ maximum 1.55
T(AV)
), TJ = TJ maximum 0.87
T(AV)
100 µs
V
= TJ maximum
J
DRM
I
TM
175 A
85 °C
4680
3940
110
77
2.07
A
V
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise
of turned on current
Typical delay time t
dI/dt
d
minimum
Maximum turn-off time
maximum 25
t
q
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 29-Apr-08
= TJ maximum, V
T
J
= Rated V
DRM
DRM
ITM = 2 x dI/dt
TJ = 25 °C, VDM = Rated V
, ITM = 50 A DC, tp = 1 µs
DRM
Resistive load, gate pulse: 10 V, 5 Ω source
TJ = TJ maximum,
I
= 300 A, commutating dI/dt = 20 A/µs
TM
= 50 V, tp = 500 µs, dV/dt: See table in device code
V
R
1000 A/µs
1.1
15
µs
Document Number: 94367
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