C&H Technology ST173CPBF User Manual

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(Hockey PUK Version), 330 A
TO-200AB (A-PUK)
Vishay High Power Products
Inverter Grade Thyristors
FEATURES
• Metal case with ceramic insulator
• All diffused design
• Center amplifying gate
• Guaranteed high dV/dt
• International standard case TO-200AB (A-PUK)
• Guaranteed high dI/dt
• High surge current capability
• Low thermal impedance
• High speed performance
ST173CPBF Series
RoHS
COMPLIANT
PRODUCT SUMMARY
I
T(AV)
330 A
TYPICAL APPLICATIONS
•Inverters
• Choppers
• Induction heating
• All types of force-commutated converters
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
I
t
V
DRM/VRRM
Range 15 to 30 µs
t
q
T
J
T
hs
T
hs
50 Hz 4680
60 Hz 4900
50 Hz 110
60 Hz 100
330 A
55 °C
610 A
25 °C
A
kA2s
1000 to 1200 V
- 40 to 125 °C
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
ST173C..C
Document Number: 94366 For technical questions, contact: ind-modules@vishay.com Revision: 29-Apr-08 1
VOLTAGE
CODE
10 1000 1100
12 1200 1300
DRM/VRRM
REPETITIVE PEAK VOLTAGE
, MAXIMUM
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
= TJ MAXIMUM
AT T
J
MAXIMUM
mA
40
www.vishay.com
ST173CPBF Series
Vishay High Power Products
Inverter Grade Thyristors
(Hockey PUK Version), 330 A
CURRENT CARRYING CAPABILITY
I
FREQUENCY UNITS
180° el
TM
180° el
50 Hz 760 660 1200 1030 5570 4920
400 Hz 730 590 1260 1080 2800 2460
1000 Hz 600 490 1200 1030 1620 1390
2500 Hz 350 270 850 720 800 680
Recovery voltage V
r
Voltage before turn-on V
d
50 50 50
V
DRM
Rise of on-state current dI/dt 50 - - A/µs
Heatsink temperature 40 55 40 55 40 55 °C Equivalent values for RC circuit 47/0.22 47/0.22 47/0.22 Ω/µF
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current at heatsink temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one half cycle, non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2√s
Maximum peak on-state voltage V
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance r
High level value of forward slope resistance r
Maximum holding current I
Typical latching current I
T(AV)
I
TSM
TM
T(TO)1
T(TO)2
t1
t2
H
L
180° conduction, half sine wave double side (single side) cooled
DC at 25 °C heatsink temperature double side cooled 610
t = 10 ms
t = 8.3 ms 4900
t = 10 ms
t = 8.3 ms 4120
t = 10 ms
t = 8.3 ms 100
t = 10 ms
t = 8.3 ms 71
No voltage reapplied
100 % V reapplied
No voltage reapplied
100 % V reapplied
ITM = 600 A, TJ = TJ maximum,
= 10 ms sine wave pulse
t
p
(16.7 % x π x I (I > π x I
T(AV)
(16.7 % x π x I (I > π x I
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 1.61
< I < π x I
T(AV)
), TJ = TJ maximum 0.77
TJ = 25 °C, IT > 30 A 600
TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000
I
TM
V
DRM
RRM
Sinusoidal half wave, initial T
RRM
T(AV)
T(AV)
I
TM
100 µs
V
DRM
330 (120) A
55 (85) °C
4680
3940
= TJ maximum
J
110
77
2.07
), TJ = TJ maximum 1.55
), TJ = TJ maximum 0.87
kA
mΩ
mA
A
V
A
2
s
V
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of rise of turned on current
Typical delay time t
minimum
Maximum turn-off time
maximum 30
www.vishay.com For technical questions, contact: ind-modules@vishay.com 2 Revision: 29-Apr-08
dI/dt T
d
t
q
= TJ maximum, V
J
TJ = 25 °C, VDM = Rated V
= Rated V
DRM
, ITM = 2 x dI/dt 1000 A/µs
DRM
, ITM = 50 A DC, tp = 1 µs
DRM
Resistive load, gate pulse: 10 V, 5 Ω source
TJ = TJ maximum, I
= 300 A, commutating dI/dt = 20 A/µs
TM
V
= 50 V, tp = 500 µs, dV/dt: See table in device code
R
1.1
15
µs
Document Number: 94366
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