C&H Technology ST1200C-KP User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

A-24 (K-PUK)

PRODUCT SUMMARY

I

T(AV)

ST1200C..KP Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 1650 A

FEATURES

• Center amplifying gate

• Metal case with ceramic insulator

• International standard case A-24 (K-PUK)

• High profile hockey PUK

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• DC motor controls

1650 A

• Controlled DC power supplies

• AC controllers

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 30 500

60 Hz 32 000

50 Hz 4651

60 Hz 4250

Typical 200 µs

1650 A

55 °C

3080 A

25 °C

1200 to 2000 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST1200C..K

V

VOLTAGE

CODE

12 1200 1300

14 1400 1500

16 1600 1700

18 1800 1900

20 2000 2100

DRM/VRRM

, MAXIMUM REPETITIVE PEAK

AND OFF-STATE VOLTAGE

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

A

kA2s

MAXIMUM

= TJ MAXIMUM

J

mA

100

Document Number: 94394 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 1

www.vishay.com

ST1200C..KP Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 1650 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 46 510 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 3080

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 32 000

t = 10 ms

t = 8.3 ms 26 900

t = 10 ms

t = 8.3 ms 4250

t = 10 ms

t = 8.3 ms 3000

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 4000 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.73 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.01

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.19

T(AV)

), TJ = TJ maximum 0.91

T(AV)

), TJ = TJ maximum 0.21

T(AV)

1650 (700) A

55 (85) °C

30 500

25 700

4651

3300

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.9
µs

200

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 100 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94394

2 Revision: 30-Apr-08

ST1200C..KP Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version), 1650 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 16

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 1.4 -

= 25 °C 1.1 3.0

T

J

= 125 °C 0.9 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

anode to

DRM

cathode applied

VALUES

TYP. MAX.

3.0 A

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Maximum thermal resistance,
case to heatsink

R

R

T

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.0.42

DC operation double side cooled 0.021

DC operation single side cooled 0.006

DC operation double side cooled 0.003

Mounting force, ± 10 %

Approximate weight 425 g

Case style See dimensions - link at the end of datasheet A-24 (K-PUK)

ΔR

CONDUCTION ANGLE

CONDUCTION

thJC

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.003 0.003 0.002 0.002

120° 0.004 0.004 0.004 0.004

90° 0.005 0.005 0.005 0.005

60° 0.007 0.007 0.007 0.007

30° 0.012 0.012 0.012 0.012

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

Document Number: 94394 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 3

- 40 to 125
°C

- 40 to 150

K/W

24 500
(2500)

N

(kg)

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

www.vishay.com

ST1200C..KP Series

Vishay High Power Products

130

120

110

100

90

80

70

60

50

40

0 200 400 600 800 1000 1200

Maximum Allowable Heatsink Temperature (°C)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

0 400 800 1200 1600 2000

Maximum Allowable Heatsink Temperature (°C)

Fig. 2 - Current Ratings Characteristics

ST1200C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

ST1200C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

DC

Average On-state Current (A)

Phase Control Thyristors

(Hockey PUK Version), 1650 A

130

120

110

100

90

80

70

60

50

180°

40

30

20

0 600 1200 1800 2400 3000 3600

Maximum Allowable Heatsink Temperature (°C)

Fig. 4 - Current Ratings Characteristics

4000

3500

3000

2500

2000

1500

1000

500

0

0 400 800 1200 1600 2000

Maximum Allowable Heatsink Temperature (°C)

Fig. 5 - On-State Power Loss Characteristics

ST1200C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average On-state Current (A)

180°
120°

90°
60°
30°

RMS Limit

Conduction Angle

ST1200C..K Series
T = 125°C

J

Average On-state Current (A)

DC

130

120

110

100

90

80

70

60

50

40

30

0 400 800 1200 1600 2000

Maximum Allowable Heatsink Temperature (°C)

Fig. 3 - Current Ratings Characteristics

www.vishay.com For technical questions, contact: [e-mail]
4 Revision: 30-Apr-08

ST1200C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

180°

5000

4000

3000

2000

1000

Maximum Allowable Heatsink Temperature (°C)

DC
180°
120°

90°

60°

30°

RMS Limit

Conduction Period

ST1200C..K Series
T = 125°C

J

0

0 600 1200 1800 2400 3000 3600

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

Document Number: 94394

3

ST1200C..KP Series

Phase Control Thyristors

(Hockey PUK Version), 1650 A

28000

26000

24000

22000

20000

18000

16000

14000

12000

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With
Rated V Applied Following Surge.

RRM

ST1200C..K Series

11010

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

Initial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

10000

Vishay High Power Products

32000

Maximum Non Repetitive Surge Current

30000

28000

26000

24000

22000

20000

18000

16000

14000

12000

0

Peak Half Sine Wave On-state Current (A)

Fig. 8 - Maximum Non-Repetitive Surge Current

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

ST1200C..K Series

0.01 0.1 1

Pulse Train Duration (s)

Single and Double Side Cooled

Initial T = 125°C

No Voltage Reapplied

Rated V Reapplied

J

RRM

1000

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

0.1
Steady State Value

R = 0.042 K/W

thJ-hs

(Single Side Cooled)

thJ-hs

R = 0.021 K/W

thJ-hs

(Double Side Cooled)

0.01

(DC Operation)

0.001

0.001 0.01 0.1 1 10

Transient Thermal Impedance Z (K/W)

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

T = 25°C

J

T = 125°C

J

ST1200C..K Series

ST1200C..K Series

Characteristics

thJ-hs

Document Number: 94394 For technical questions, contact: [e-mail]
Revision: 30-Apr-08 5

www.vishay.com

ST1200C..KP Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs

10

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 10

ORDERING INFORMATION TABLE

Device code

ST 112 0 C 20 K 1 - PbF

VGD

Phase Control Thyristors

(Hockey PUK Version), 1650 A

(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms

(a)

(b)

Tj=-40 °C

Tj=25 °C

Tj=125 °C

IGD

Device: ST1200C..K Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

Frequency Limited by PG(AV)

(2)

(3)(1)

0

324

51

6789

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- K = PUK case A-24 (K-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8 - Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

9

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95081

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 30-Apr-08

Document Number: 94394

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

A-24 (K-PUK)

Case Style A-24 (K-PUK)

Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum

1 (0.04) MIN.

2 places

27.5 (1.08) MAX.

47.5 (1.87) DIA. MAX.
2 places

67 (2.6) DIA. MAX.

74.5 (2.9) DIA. MAX.

Pin receptable
AMP. 60598-1

4.75 (0.2) NOM.

20° ± 5°

44 (1.73)

2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95081 For technical questions concerning discrete products, contact: [e-mail]
Revision: 02-Aug-07 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1