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Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
FEATURES
• Center gate
ST110SPbF Series
• International standard case TO-209AC (TO-94)
• Compression bonded encapsulation for heavy
duty operations such as severe thermal cycling
• Hermetic glass-metal case with ceramic insulator
TO-209AC (TO-94)
(Glass-metal seal over 1200 V)
• Lead (Pb)-free
• Designed and qualified for industrial level
PRODUCT SUMMARY
I
T(AV)
110 A
TYPICAL APPLICATIONS
• DC motor controls
• Controlled DC power supplies
• AC controllers
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS VALUES UNITS
I
T(AV)
I
T(RMS)
I
TSM
2
t
I
V
DRM/VRRM
t
q
T
J
T
C
50 Hz 2700
60 Hz 2830
50 Hz 36.4
60 Hz 33.2
Typical 100 µs
110 A
90 °C
175
A
kA2s
400 to 1600 V
- 40 to 125 °C
RoHS
COMPLIANT
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
TYPE NUMBER
ST110S
Document Number: 94393 For technical questions, contact: ind-modules@vishay.com
Revision: 30-Apr-08 1
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
16 1600 1700
DRM/VRRM
, MAXIMUM REPETITIVE PEAK
AND OFF-STATE VOLTAGE
V
V
, MAXIMUM
NON-REPETITIVE PEAK VOLTAGE
RSM
V
I
DRM/IRRM
= TJ MAXIMUM
AT T
J
www.vishay.com
MAXIMUM
mA
20

ST110SPbF Series
Vishay High Power Products
Phase Control Thyristors
(Stud Version), 110 A
ON-STATE CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average on-state current
at case temperature
Maximum RMS on-state current I
I
T(RMS)
Maximum peak, one-cycle
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 364 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of on-state slope resistance r
High level value of on-state slope resistance r
Maximum on-state voltage V
Maximum holding current I
Typical latching current I
T(AV)
180° conduction, half sine wave
DC at 85 °C case temperature 175
I
TSM
T(TO)1
T(TO)2
t1
t2
TM
H
L
t = 10 ms
t = 8.3 ms 2830
t = 10 ms
t = 8.3 ms 2380
t = 10 ms
t = 8.3 ms 33.2
t = 10 ms
t = 8.3 ms 23.5
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I
Ipk = 350 A, TJ = TJ maximum, tp = 10 ms sine pulse 1.52 V
TJ = 25 °C, anode supply 12 V resistive load
No voltage
reapplied
100 % V
reapplied
No voltage
RRM
Sinusoidal half wave,
initial T
= TJ maximum
J
reapplied
100 % V
RRM
reapplied
< I < π x I
T(AV)
), TJ = TJ maximum 0.92
T(AV)
< I < π x I
T(AV)
), TJ = TJ maximum 1.81
T(AV)
), TJ = TJ maximum 0.90
T(AV)
), TJ = TJ maximum 1.79
T(AV)
110 A
90 °C
2700
2270
36.4
25.8
600
1000
A
kA2s
V
mΩ
mA
SWITCHING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum non-repetitive rate of
rise of turned-on current
Typical delay time t
Typical turn-off time t
dI/dt
d
q
Gate drive 20 V, 20 Ω, t
T
= TJ maximum, anode voltage ≤ 80 % V
J
≤ 1 µs
r
DRM
Gate current 1 A, dIg/dt = 1 A/µs
V
= 0.67 % V
d
, TJ = 25 °C
DRM
ITM = 100 A, TJ = TJ maximum, dI/dt = 10 A/µs,
V
= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs
R
500 A/µs
2.0
µs
100
BLOCKING
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum critical rate of rise of
off-state voltage
Maximum peak reverse and
off-state leakage current
dV/dt T
,
I
RRM
I
DRM
= TJ maximum linear to 80 % rated V
J
TJ = TJ maximum, rated V
DRM/VRRM
DRM
500 V/µs
applied 20 mA
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94393
2 Revision: 30-Apr-08

ST110SPbF Series
Phase Control Thyristors
Vishay High Power Products
(Stud Version), 110 A
TRIGGERING
PARAMETER SYMBOL TEST CONDITIONS
Maximum peak gate power P
Maximum average gate power P
Maximum peak positive gate current I
Maximum peak positive gate voltage + V
Maximum peak negative gate voltage - V
GM
G(AV)
GM
GM
GM
TJ = TJ maximum, tp ≤ 5 ms 5
TJ = TJ maximum, f = 50 Hz, d% = 50 1
TJ = TJ maximum, tp ≤ 5 ms
TJ = - 40 °C
DC gate current required to trigger I
DC gate voltage required to trigger V
DC gate current not to trigger I
DC gate voltage not to trigger V
GT
GT
GD
GD
= 25 °C 90 150
J
T
= 125 °C 40 -
J
TJ = - 40 °C 2.9 -
= 25 °C 1.8 3.0
T
J
= 125 °C 1.2 -
T
J
Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
6 V anode to cathode applied
Maximum gate current/voltage
not to trigger is the maximum
TJ = TJ maximum
value which will not trigger any
unit with rated V
anode to
DRM
cathode applied
VALUES
TYP. MAX.
2.0 A
20
5.0
180 -
10 mA
0.25 V
UNITS
W
V
mAT
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum operating junction
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Mounting torque, ± 10 %
T
J
Stg
R
thJC
R
thCS
DC operation 0.195
Mounting surface, smooth, flat and greased 0.08
Non-lubricated threads 15.5 (137)
Lubricated threads 14 (120)
Approximate weight 130 g
Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)
ΔR
CONDUCTION
thJC
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
180° 0.035 0.025
120° 0.041 0.042
90° 0.052 0.056
60° 0.076 0.079
30° 0.126 0.127
Note
• The table above shows the increment of thermal resistance R
when devices operate at different conduction angles than DC
thJC
- 40 to 125
- 40 to 150
(lbf · in)
T
= TJ maximum K/W
J
°C
K/W
Nm
Document Number: 94393 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 30-Apr-08 3

ST110SPbF Series
Vishay High Power Products
130
120
110
100
90
80
Maximum Allowable Case Temperature (°C)
0 20406080100120
Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics
ST110S Series
R (DC) = 0.195 K/W
thJC
Conduction Angle
30°
60°
90°
120°
Average On-state Current (A)
160
140
120
100
180°
120°
90°
60°
30°
RMS Limit
80
60
40
20
0
Maximum Average On-state Power Loss (W)
020406080100120
Average On-state Current (A)
Phase Control Thyristors
(Stud Version), 110 A
130
120
110
100
90
180°
0
.
3
0
.
4
K
/
W
0
.
5
K
/
W
0
.
6
K
/
W
0
.
8
K
/
W
1
K
/
W
1
.
2
K
/
Conduction Angle
W
ST110S Series
T = 125°C
J
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
Fig. 3 - On-State Power Loss Characteristics
80
Maximum Allowable Case Temperature (°C)
R
0
.
2
K
K
/
/
W
W
ST110S Series
R (DC) = 1.95 K/W
thJC
Conduction Period
30°
60°
90°
120°
180°
DC
0 20 40 60 80 100 120 140 160 180
Average On-state Current (A)
t
h
S
A
=
0
.
1
K
/
W
D
e
l
t
a
R
220
200
180
160
140
DC
180°
120°
90°
60°
30°
120
RMS Limit
100
80
60
40
20
0
Maximum Average On-state Power Loss (W)
0 20 40 60 80 100 120 140 160 180
Conduction Period
ST110S Series
T = 125°C
J
Average On-state Current (A)
0
0
0
1
1
.
25 50 75 100 125
Maximum Allowable Ambient Temperature (°C)
R
0
t
h
.
2
S
A
K
/
=
W
0
.
3
K
/
W
0
.
4
K
/
W
.
5
K
/
W
.
6
K
/
W
.
8
K
/
W
K
/
W
2
K
/
W
0
.
1
K/
W
D
e
l
t
a
R
Fig. 4 - On-State Power Loss Characteristics
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94393
4 Revision: 30-Apr-08

ST110SPbF Series
Phase Control Thyristors
(Stud Version), 110 A
2400
At Any Rated Load Condition And With
Rated V Applied Following Surge.
2200
2000
1800
1600
1400
1200
Peak Half Sine Wave On-state Current (A)
1000
110100
Number Of Equal Amplitude Half Cycle Current Pulses (N)
Fig. 5 - Maximum Non-Repetitive Surge Current
RRM
ST110S Series
Initial T = 125°C
J
@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s
10000
Vishay High Power Products
2800
Maximum Non Repetitive Surge Current
2600
2400
2200
2000
1800
1600
1400
1200
Peak Half Sine Wave On-state Current (A)
1000
Fig. 6 - Maximum Non-Repetitive Surge Current
Versus Pulse Train Duration. Control
Of Conduction May Not Be Maintained.
ST110S Series
0.01 0.1 1 10
Pulse Train Duration (s)
Initial T = 125°C
J
No Voltage Reapplied
Rated V Reapplied
RRM
1000
100
Instantaneous On-state Current (A)
10
0.5 1.5 2.5 3.5 4.5
Instantaneous On-state Voltage (V)
Tj = 25˚C
Tj = 125˚C
ST110S Series
Fig. 7 - On-State Voltage Drop Characteristics
1
Steady State Value
R = 0.195 K/W
thJC
Transient Thermal Impedance Z (K/W)
0.001
thJC
(DC Operation)
0.1
0.01
ST110S Series
0.001 0.01 0.1 1 10
Square Wave Pulse Duration (s)
Fig. 8 - Thermal Impedance Z
Characteristic
thJC
Document Number: 94393 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 30-Apr-08 5

ST110SPbF Series
Vishay High Power Products
100
Rectangular gate pulse
a) Recommended load line for
rated di/dt : 20V, 10ohms; tr<=1 µs
b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
10
tr<=1 µs
1
Instantaneous Gate Voltage (V)
0.1
0.001 0.01 0.1 1 10 100
ORDERING INFORMATION TABLE
Device code
ST 11 0 S 16 P 0 V PbF
VGD
Phase Control Thyristors
(Stud Version), 110 A
(1) PGM = 10W, tp = 4ms
(2) PGM = 20W, tp = 2ms
(3) PGM = 40W, tp = 1ms
(4) PGM = 60W, tp = 0.66ms
(a)
(b)
Tj=-40 °C
Tj=25 °C
Tj=125 °C
IGD
Device: ST110S Series
Instantaneous Gate Current (A)
Fig. 9 - Gate Characteristics
Frequency Limited by PG(AV)
(1) (2)
(3)
(4)
324
51
6789
1 - Thyristor
2 - Essential part marking
3 - 0 = Converter grade
4
- S = Compression bonding stud
5
- Voltage code x 100 = V
6
- P = Stud base 1/2"-20UNF- 2 A threads
7
- 0 = Eyelet terminals (gate and auxiliary cathode leads)
RRM
(see Voltage Ratings table)
1 = Fast-on terminals (gate and auxiliary cathode leads)
8 - V = Glass-metal seal (only up to 1200 V)
None = Ceramic housing (over 1200 V)
9
- Lead (Pb)-free
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95078
www.vishay.com For technical questions, contact: ind-modules@vishay.com
6 Revision: 30-Apr-08
Document Number: 94393