C&H Technology ST103SP User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

TO-209AC (TO-94)

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 105 A

FEATURES

• All diffused design

• Center amplifying gate

• Guaranteed high dV/dt

• Guaranteed high dI/dt

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Lead (Pb)-free

• Designed and qualified for industrial level

ST103SP Series

RoHS

COMPLIANT

PRODUCT SUMMARY

I

T(AV)

105 A

TYPICAL APPLICATIONS

•Inverters

• Choppers

• Induction heating

• All types of force-commutated converters

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

t

I

V

DRM/VRRM

t

Range 10 to 25 µs

q

T

J

T

C

50 Hz 3000

60 Hz 3150

50 Hz 45

60 Hz 41

105 A

85 °C

165

A

kA2s

400 to 800 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

TYPE NUMBER

ST103S

Document Number: 94365 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

VOLTAGE

CODE

04 400 500

08 800 900

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

I

DRM/IRRM

AT T

= TJ MAXIMUM

J

www.vishay.com

MAXIMUM

mA

30

ST103SP Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 105 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 280 180 440 330 4730 3630

400 Hz 310 200 470 300 2500 1850

1000 Hz 320 200 480 310 1530 1090

2500 Hz 340 210 490 320 840 580

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50

V

DRM

Rise of on-state current dI/dt 50 - - A/µs

Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 22/0.15 22/0.15 22/0.15 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at case temperature

Maximum RMS on-state current I

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 450 kA2√s

Maximum peak on-state voltage V

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

I

T(AV)

T(RMS)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave

DC at 76 °C case temperature 165

t = 10 ms

t = 8.3 ms 3150

t = 10 ms

t = 8.3 ms 2650

t = 10 ms

t = 8.3 ms 41

t = 10 ms

t = 8.3 ms 29

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 300 A, TJ = TJ maximum,
t

= 10 ms sine wave pulse

p

(16.7 % x π x I
T

= TJ maximum

J

(I > π x I

T(AV)

(16.7 % x π x I
T

= TJ maximum

J

(I > π x I

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 1.35

< I < π x I

T(AV)

), TJ = TJ maximum 1.30

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

V

DRM

I

TM

RRM

Sinusoidal half wave,
initial T

RRM

),

T(AV)

),

T(AV)

100 µs

V

= TJ maximum

J

DRM

I

TM

105 A

85 °C

3000

2530

45

32

1.73

1.32

1.40

A

V

kA

mΩ

mA

A

2

s

V

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94365

2 Revision: 29-Apr-08

ST103SP Series

Inverter Grade Thyristors

Vishay High Power Products

(Stud Version), 105 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned on current

Typical delay time t

Maximum turn-off time

minimum

maximum 25

dI/dt T

d

t

q

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and off-state
leakage current

dV/dt

I

RRM

I

DRM

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

= TJ maximum, V

J

TJ = 25 °C, VDM = Rated V

= Rated V

DRM

, ITM = 2 x dI/dt 1000 A/µs

DRM

, ITM = 50 A DC, tp = 1 µs

DRM

Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum, ITM = 100 A, commutating dI/dt = 10 A/µs

= 50 V, tp = 200 µs, dV/dt: See table in device code

V

R

T

= TJ maximum, linear to 80 % V

J

DRM

,

higher value available on request

,

TJ = TJ maximum, rated V

DRM/VRRM

applied 30 mA

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM

applied

0.80

10

µs

500 V/µs

40

5

W

5A

20

5

V

200 mA

3V

20 mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

T

J

Stg

R

thJC

R

thCS

DC operation 0.195

Mounting surface, smooth, flat and greased 0.08

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

Document Number: 94365 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 3

- 40 to 125

- 40 to 150

15.5

(137)

(120)

°C

K/W

N · m

(lbf ⋅ in)

14

www.vishay.com

ST103SP Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 105 A

ΔR

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

180° 0.034 0.025

120° 0.040 0.042

90° 0.052 0.056

60° 0.076 0.079

30° 0.126 0.127

130

120

110

100

Temperature (°C)

90

Maximum Allowable Case

80

030

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

ST103S Series

(DC) = 0.195 K/W

R

thJC

Conduction angle

60°30° 90° 120° 180°

10 40 7020 50 80

60

Average On-State Current (A)

Ø

90

100 110

T

= TJ maximum K/W

J

when devices operate at different conduction angles than DC

thJC

130

120

110

100

90

Temperature (°C)

80

Maximum Allowable Case

70

060

ST103S Series

(DC) = 0.195 K/W

R

thJC

30° 60° 90° 120° 180°

20 80 14040 100 160

Average On-State Current (A)

Ø

Conduction period

DC

120

180

180

160

140

120

100

80

60

Power Loss (W)

40

Maximum Average On-State

20

0

030

180°
120°

90°
60°
30°

RMS limit

10 40 7020 50 80

Average On-State Current (A)

Conduction angle

ST083S Series

= 125 °C

T

J

60

Ø

90

100 110

180

160

140

120

100

80

60

Power Loss (W)

40

Maximum Average On-state

20

0

25 50 75 100 125

0.3 K/W

0.4 K/W

0.5 K/W

0.8 K/W

1.2 K/W

0.2 K/W

Maximum Allowable Ambient Temperature (°C)

R

thSA

= 0.1 K/W - ΔR

Fig. 3 - On-State Power Loss Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94365

4 Revision: 29-Apr-08

ST103SP Series

260

240
220
200
180
160
140

120
100

80

Power Loss (W)

60

Maximum Average On-State

40

20

0

0

DC
180°
120°

90°
60°
30°

604020 80

Average On-State Current (A)

2800

2600

2400

2200

2000

1800

1600

On-State Current (A)

Peak Half Sine Wave

1400

1200

At any rated load condition and with
rated V

ST103S Series

1 10 100

applied following surge

RRM

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Inverter Grade Thyristors

(Stud Version), 105 A

RMS limit

Ø

Conduction angle

ST103S Series

= 125 °C

T

J

100 120

140 160 180

Fig. 4 - On-State Power Loss Characteristics

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Vishay High Power Products

260

240
220
200
180

0.3 K/W

160

0.4 K/W

140

0.5 K/W

120
100

80

Power Loss (W)

Maximum Average On-State

1.2 K/W

60

40

20

0

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

10 000

1000

Instantaneous On-State Current (A)

100

123456

Fig. 7 - On-State Voltage Drop Characteristics

R

0.2 K/W

0.8 K/W

thSA

= 0.1 K/W - ΔR

TJ = 25 °C

Instantaneous On-State Voltage (V)

TJ = 125 °C

ST103S Series

3000

2800

2600

2400

2200

2000

1800

On-State Current (A)

1600

Peak Half Sine Wave

1400

1200

0.01 0.1 1

Maximum non repetitive surge current
versus pulse train duration. Control of
conduction may not be maintained.

ST103S Series

Fig. 6 - Maximum Non-Repetitive Surge Current

Initial TJ = 125 °C
No voltage reapplied
Rated V

RRM

Pulse Train Duration (s)

reapplied

1

Steady state value

= 0.195 K/W

R

thJC

(DC operation)

0.1

- Transient

thJC

Z

Thermal Impedance (K/W)

0.01

0.01 0.1 1 100.001

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

ST103S Series

Characteristic

thJC

Document Number: 94365 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 29-Apr-08 5

ST103SP Series

)

Vishay High Power Products

160

ST103S Series

140

= 125 °C

T

J

120

100

80

60

- Maximum Reverse

rr

Recovery Charge (µC)

Q

40

20

2010 30 40 50 60 70 80 90 100

dI/dt - Rate of Fall of On-State Current (A/µs)

Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics

10 000

1000

2000

5000

10 000

Peak On-State Current (A)

ITM = 500 A

1000

ITM = 50 A

ST103S Series
Sinusoidal pulse

t

p

T

ITM = 300 A

Snubber circuit
R

s

C

s

V

D

= 60 °C

C

Inverter Grade Thyristors

(Stud Version), 105 A

ITM = 200 A

ITM = 100 A

= 22 Ω
= 0.15 µF
= 80 % V

DRM

50 Hz100200400

120

110

100

90

80

ITM = 500 A

= 300 A

I

TM

= 200 A

I

TM

= 100 A

I

TM

= 50 A

I

TM

70

60

50

40

30

20

10

- Maximum Reverse Recovery Current (A

rr

I

2010 30 40 50 60 70 80 90 100

dI/dt - Rate of Fall of Forward Current (A/µs)

ST103S Series
T

= 125 °C

J

10000

ST103S Series
Sinusoidal pulse

t

= 85 °C

T

p

C

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

1000

10 000

5000

2000

1000

D

Peak On-State Current (A)

DRM

50 Hz100200400

100

10 100 1000 10 000

Pulse Basewidth (µs)

100

10 100 1000 10 000

Pulse Basewidth (µs)

Fig. 11 - Frequency Characteristics

10 000

Peak On-State Current (A)

1000

100

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

D

5000

ST103S Series
Trapezoidal pulse

= 60 °C

T

C

t

p

dI/dt = 50 A/µs

DRM

1500

2500

1000

400

200

100

50 Hz

10 100 1000 10 000

Pulse Basewidth (µs)

10 000

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

D

DRM

1000

1500

5000

2500

Peak On-State Current (A)

100

10 100 1000 10 000

Pulse Basewidth (µs)

1000

t

p

400

ST103S Series
Trapezoidal pulse

= 85 °C

T

C

dI/dt = 50 A/µs

50 Hz

200

100

Fig. 12 - Frequency Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94365

6 Revision: 29-Apr-08

ST103SP Series

10 000

1000

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

D

5000

10 000

DRM

1500

2500

ST103S Series

Peak On-State Current (A)

100

Trapezoidal pulse
T

C

t

p

dI/dt = 100 A/µs

= 60 °C

10 100 1000 10 000

Pulse Basewidth (µs)

100 000

10 000

1000

0.1

0.2

1000

0.5

1

Inverter Grade Thyristors

400

200

100

20 joules per pulse

10

5

3

2

(Stud Version), 105 A

50 Hz

Fig. 13 - Frequency Characteristics

Vishay High Power Products

10 000

1000

Peak On-State Current (A)

100

10 100 1000 10 000

100 000

10 000

1000

ST103S Series
Trapezoidal pulse

= 85 °C

T

C

t

p

dI/dt = 100 A/µs

5000

10 000

2500

Pulse Basewidth (µs)

ST103S Series
Rectangular pulse

t

dI/dt = 50 A/µs

p

0.1

0.2

1500

0.5

1000

1

400

3

2

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

D

20 joules per pulse

5

200

10

100

DRM

50 Hz

100

Peak On-State Current (A)

10

10 100 1000 10 000

ST103S Series
Sinusoidal pulse

t

p

Pulse Basewidth (µs)

100

Rectangular gate pulse
a) Recommended load line for
rated di/dt: 20 V, 10 Ω; t
b) Recommended load line for
≤ 30 % rated di/dt: 10 V, 10 Ω

10

t

≤ 1 µs

r

1

Instantaneous Gate Voltage (V)

0.1

0.001

100

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

(1) PGM = 10 W, tp = 20 ms

= 20 W, tp = 10 ms

(2) P

≤ 1 µs

r

(a)

(b)

T

J

T

J

= 25 °C

= 40 °C

Frequency limited by P

T

J

= 125 °C

V

GD

I

GD

Device: ST103S Series

GM

= 40 W, tp = 5 ms

(3) P

GM

= 60 W, tp = 3.3 ms

(4) P

GM

(1) (2)

G(AV)

(3)

(4)

0.01 0.1 1 10 100

Instantaneous Gate Current (A)

Fig. 15 - Gate Characteristics

Document Number: 94365 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 29-Apr-08 7

ST103SP Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 10 3 S 08 P F N 0 P

324

1

- Thyristor

2

- Essential part number

3

- 3 = Fast turn-off

4

- S = Compression bonding stud

5

- Voltage code x 100 = V

6

- P = Stud base 1/2"-20UNF-2A

7

- Reapplied dV/dt code (for tq test conditions)

8

-tq code

9

- 0 = Eyelet terminals
(gate and aux. cathode leads)

1 = Fast-on terminals
(gate and aux. cathode leads)

10 -

Lead (Pb)-free

Inverter Grade Thyristors

(Stud Version), 105 A

51

678910

(see Voltage ratings table)

RRM

dV/dt - tq combinations available

dV/dt (V/µs) 20 50 100 200 400

10
12
15

(µs)

t

q

18
20
25

* Standard part number.
All other types available only on request.

CN
CM

CL
CP
CK

DN
DM

DL
DP
DK

EN
EM

EL
EP
EK

FN*

FM

FL*

FP

FK

----

-

HM

HL
HP
HK

HJ

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95003

www.vishay.com For technical questions, contact: [e-mail]
8 Revision: 29-Apr-08

Document Number: 94365