C&H Technology ST1000C-K User Manual

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Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version), 1473 A

FEATURES

• Center amplifying gate

ST1000C..K Series

• Metal case with ceramic insulator

• International standard case A-24 (K-PUK)

• High profile hockey PUK

A-24 (K-PUK)

• Lead (Pb)-free

TYPICAL APPLICATIONS

PRODUCT SUMMARY

I

T(AV)

1473 A

• DC motor controls

• Controlled DC power supplies

• AC controllers

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

2

I

√t 20 000 kA2√s

V

DRM/VRRM

t

q

T

J

T

hs

T

hs

50 Hz 20.0

60 Hz 21.2

50 Hz 2000

60 Hz 1865

Range 1200 to 2600 V

Typical 300 µs

Range - 40 to 125 °C

1473 A

55 °C

2913 A

25 °C

A

kA2s

RoHS

COMPLIANT

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE PEAK

V

TYPE NUMBER

ST1000C..K

Document Number: 93714 For technical questions, contact: [e-mail]
Revision: 15-May-08 1

VOLTAGE

CODE

12 1200 1300

16 1600 1700

20 2000 2100

22 2200 2300

24 2400 2500

26 2600 2700

RRM

REVERSE VOLTAGE

V

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

I

RRM

AT T

MAXIMUM

= 125 °C

J

mA

100

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ST1000C..K Series

Vishay High Power Products

Phase Control Thyristors

(Hockey PUK Version),

1473 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current
at heatsink temperature

Maximum RMS on-state current I

I

T(RMS)

Maximum peak, one-cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 20 000 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of on-state slope resistance r

High level value of on-state slope resistance r

Maximum on-state voltage drop V

Maximum holding current I

Typical latching current I

T(AV)

180° conduction, half sine wave
Double side (single side) cooled

DC at 25 °C heatsink temperature double side cooled 6540

I

TSM

T(TO)1

T(TO)2

t1

t2

TM

H

L

t = 10 ms

t = 8.3 ms 21.2

t = 10 ms

t = 8.3 ms 18.1

t = 10 ms

t = 8.3 ms 1865

t = 10 ms

t = 8.3 ms 1360

(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

Ipk = 3000 A, TJ = 125 °C, tp = 10 ms sine pulse 1.80 V

TJ = 25 °C, anode supply 12 V resistive load

No voltage
reapplied

100 % V
reapplied

No voltage

RRM

Sinusoidal half wave,
initial T

= TJ maximum

J

reapplied

100 % V

RRM

reapplied

< I < π x I

T(AV)

), TJ = TJ maximum 1.024

T(AV)

< I < π x I

T(AV)

), TJ = TJ maximum 0.265

T(AV)

), TJ = TJ maximum 0.950

T(AV)

), TJ = TJ maximum 0.283

T(AV)

1473 (630) A

55 (85) °C

20.0

17.0

2000

1445

600

1000

A

kA2s

V

mΩ

mA

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum non-repetitive rate of
rise of turned-on current

Typical delay time t

Typical turn-off time t

dI/dt

d

q

Gate drive 20 V, 20 Ω, t
T

= TJ maximum, anode voltage ≤ 80 % V

J

≤ 1 µs

r

DRM

Gate current 1 A, dIg/dt = 1 A/µs
V

= 0.67 % V

d

, TJ = 25 °C

DRM

ITM = 550 A, TJ = TJ maximum, dI/dt = 40 A/µs,
V

= 50 V, dV/dt = 20 V/µs, gate 0 V 100 Ω, tp = 500 µs

R

1000 A/µs

1.9
µs

300

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse and
off-state leakage current

dV/dt T

,

I

RRM

I

DRM

= TJ maximum linear to 80 % rated V

J

TJ = TJ maximum, rated V

DRM/VRRM

DRM

500 V/µs

applied 100 mA

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93714

2 Revision: 15-May-08

ST1000C..K Series

Phase Control Thyristors

Vishay High Power Products

(Hockey PUK Version),

1473 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS

Maximum peak gate power P

Maximum peak average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

GM

G(AV)

GM

TJ = TJ maximum, tp ≤ 5 ms 16

TJ = TJ maximum, f = 50 Hz, d% = 50 3

TJ = TJ maximum, tp ≤ 5 ms

GM

GM

TJ = - 40 °C

DC gate current required to trigger I

DC gate voltage required to trigger V

DC gate current not to trigger I

DC gate voltage not to trigger V

GT

GT

GD

GD

= 25 °C 100 200

J

T

= 125 °C 50 -

J

TJ = - 40 °C 1.4 -

= 25 °C 1.1 3.0

T

J

= 125 °C 0.9 -

T

J

Maximum required gate trigger/
current/voltage are the lowest
value which will trigger all units
12 V anode to cathode applied

Maximum gate current/voltage
not to trigger is the maximum

TJ = TJ maximum

value which will not trigger any
unit with rated V

DRM

anode to

cathode applied

VALUES

TYP. MAX.

3.0 A

20

5.0

200 -

10 mA

0.25 V

UNITS

W

V

mAT

V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to heatsink R

Maximum thermal resistance, case to heatsink R

J

Stg

thJ-hs

thC-hs

DC operation single side cooled 0.042

DC operation double side cooled 0.021

DC operation single side cooled 0.006

DC operation double side cooled 0.003

Mounting force, ± 10 %

Approximate weight 425 g

Case style See dimensions - link at the end of datasheet A-24 (K-PUK)

ΔR

CONDUCTION

thJC

CONDUCTION ANGLE

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

TEST CONDITIONS UNITS

180° 0.003 0.003 0.002 0.002

120° 0.004 0.004 0.004 0.004

90° 0.005 0.005 0.005 0.005

= TJ maximum K/W

T

J

60° 0.007 0.007 0.007 0.007

30° 0.012 0.012 0.012 0.012

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJC

- 40 to 125

- 40 to 150

24 500

(2500)

°C

K/W

N

(kg)

Document Number: 93714 For technical questions, contact: [e-mail]

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Revision: 15-May-08 3

ST1000C..K Series

)

Vishay High Power Products

130

120

110

100

90

80

70

0 100 200 300 400 500 600 700

Maximum Allowable Heatsink Temperature (°C)

Fig. 1 - Current Ratings Characteristics

C)

130

120

110

100

ST1000C..K Series
(Single Side Cooled
R (DC) = 0.042 K/W

thJ-hs

Conduction Angle

30°

60°

90°

120°

Average On-state Current (A)

ST1000C..K Series
(Single Side Cooled)
R (DC) = 0.042 K/W

thJ-hs

Conduction Period

Phase Control Thyristors

(Hockey PUK Version),

1473 A

180°

130

120

110

ST1000C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

100

90˚

120˚

Conduction Period

90

80

70

60

30˚

60˚

50

40

0 400 800 1200 1600 2000 2400

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 4 - Current Ratings Characteristics

3000

180˚

2500

2000

120˚

90˚
60˚
30˚

1500

180˚

DC

RMS Limit

90

80

30°

60°

90°

120°

180°

70

0 200 400 600 800 1000

Maximum Allowable Heatsink Temperature (°

Average On-state Current (A)

Fig. 2 - Current Ratings Characteristics

130

120

110

ST1000C..K Series
(Double Side Cooled)
R (DC) = 0.021 K/W

thJ-hs

100

90

80

70

30˚

60˚

Conduction Angle

90˚

60

50

40

0 400 800 1200 1600

Maximum Allowable Heatsink Temperature (°C)

Average On-state Current (A)

Fig. 3 - Current Ratings Characteristics

120˚

DC

180˚

1000

500

Conduction Angle

ST1000C..K Series
T = 125˚C

J

0

0 400 800 1200 1600

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 5 - On-State Power Loss Characteristics

4000

3500

3000

2500

2000

1500

DC
180˚
120˚

90˚

60˚

30˚

RMS Limit

Conduction Period

1000

500

ST1000C..K Series
T = 125˚C

J

0

0 500 1000 1500 2000 2500

Maximum Average On-state Power Loss (W)

Average On-state Current (A)

Fig. 6 - On-State Power Loss Characteristics

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Document Number: 93714

4 Revision: 15-May-08

ST1000C..K Series

Phase Control Thyristors

(Hockey PUK Version),

18000

16000

14000

12000

10000

Peak Half Sine Wave On-state Current (A)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

RRM

Initial T = 125˚C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

8000

ST1000C..K Series

6000

110100

Number Of Equal Amplitude Half Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

Single and Double Side Cooled

10000

T = 25˚C

J

1473 A

Vishay High Power Products

22000

Maximum Non Repetitive Surge Current

20000

18000

16000

14000

12000

10000

8000

6000

Peak Half Sine Wave On-state Current (A)

Fig. 8 - Maximum Non-Repetitive Surge Current

T = 125˚C

J

Versus Pulse Train Duration. Control

Of Conduction May Not Be Maintained.

ST1000C..K Series

Initial T = 125˚C

No Voltage Reapplied

Rated V Reapplied

RRM

0.01 0.1 1

Pulse Train Duration (s)

Single and Double Side Cooled

J

1000

ST1000C..K Series

Instantaneous On-state Current (A)

100

0.5 1 1.5 2 2.5 33.5 4

Instantaneous On-state Voltage (V)

Fig. 9 - On-State Voltage Drop Characteristics

0.1

(K/W)

Transient Thermal Impedance Z

Steady State Value

R = 0.42 K/W

thJ-hs

0.01

0.001

thJ-hs

(Single Side Cooled)

R = 0.21 K/W

thJ-hs

(Double Side Cooled)

(DC Operation)

ST1000C..K Series

0.001 0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

Fig. 10 - Thermal Impedance Z

Characteristics

thJ-hs

Document Number: 93714 For technical questions, contact: [e-mail]

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Revision: 15-May-08 5

ST1000C..K Series

Vishay High Power Products

100

Rectangular gate pulse
a) Recommended load line for

rated di/dt : 20V, 10ohms; tr<=1 µs

b) Recommended load line for
<=30% rated di/dt : 10V, 10ohms
tr<=1 µs

10

1

Instantaneous Gate Voltage (V)

0.1

0.001 0.01 0.1 1 10 100

ORDERING INFORMATION TABLE

VGD

Phase Control Thyristors

(Hockey PUK Version),

1473 A

(1) PGM = 16W, tp = 4ms
(2) PGM = 30W, tp = 2ms
(3) PGM = 60W, tp = 1ms

(a)

(b)

Tj=-40

Tj=25

Tj=125 ˚C

IGD

Device: ST100C..K Series

Instantaneous Gate Current (A)

Fig. 11 - Gate Characteristics

˚C

˚
C

Frequency Limited by PG(AV)

(1)

(2) (3)

Device code

ST 100 0 C 26 K 1 -

51324678

1 - Thyristor

2 - Essential part number

3 - 0 = Converter grade

4

- C = Ceramic PUK

5

- Voltage code x 100 = V

6

- K = PUK case A-24 (K-PUK)

7

- 0 = Eyelet terminals (gate and auxiliary cathode unsoldered leads)

(see Voltage Ratings table)

RRM

1 = Fast-on terminals (gate and auxiliary cathode unsoldered leads)

2 = Eyelet terminals (gate and auxiliary cathode soldered leads)

3 = Fast-on terminals (gate and auxiliary cathode soldered leads)

8 - Critical dV/dt:

None = 500 V/µs (standard selection)

L = 1000 V/µs (special selection)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95081

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6 Revision: 15-May-08

Document Number: 93714

DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

A-24 (K-PUK)

Case Style A-24 (K-PUK)

Creepage distance: 28.88 (1.137) minimum
Strike distance: 17.99 (0.708) minimum

1 (0.04) MIN.

2 places

27.5 (1.08) MAX.

47.5 (1.87) DIA. MAX.
2 places

67 (2.6) DIA. MAX.

74.5 (2.9) DIA. MAX.

Pin receptable
AMP. 60598-1

4.75 (0.2) NOM.

20° ± 5°

44 (1.73)

2 holes DIA. 3.5 (0.14) x 2.1 (0.1) deep

Quote between upper and lower pole pieces has to be considered after
application of mounting force (see thermal and mechanical specification)

Document Number: 95081 For technical questions concerning discrete products, contact: [e-mail]
Revision: 02-Aug-07 For technical questions concerning module products, contact: [e-mail]

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1