C&H Technology ST083SPbF User Manual

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TO-209AC (TO-94)

PRODUCT SUMMARY

I

T(AV)

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 85 A

FEATURES

• Center amplifying gate

• High surge current capability

• Low thermal impedance

• High speed performance

• Compression bonding

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

•Inverters

• Choppers

85 A

• Induction heating

• All types of force-commutated converters

ST083SPbF Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL TEST CONDITIONS VALUES UNITS

I

T(AV)

I

T(RMS)

I

TSM

2

I

t

V

DRM/VRRM

t

q

T

J

T

C

50 Hz 2450 A

60 Hz 2560 A

50 Hz 30

60 Hz 27

Range; see Switching table 10 to 20 µs

85 A

85 °C

135 A

400 to 1200 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

TYPE NUMBER

ST083S

V

VOLTAGE

CODE

04 400 500

08 800 900

10 1000 1100

12 1200 1300

DRM/VRRM

REPETITIVE PEAK VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

NON-REPETITIVE PEAK VOLTAGE

RSM

V

kA2s

I

DRM/IRRM

AT T

J

MAX.

= TJ MAX.

mA

30

Document Number: 94334 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

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ST083SPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 85 A

CURRENT CARRYING CAPABILITY

I

FREQUENCY UNITS

180° el

TM

180° el

50 Hz 210 120 330 270 2540 1930

400 Hz 200 120 350 210 1190 810

1000 Hz 150 80 320 190 630 400

2500 Hz 70 25 220 85 250 100

Recovery voltage V

r

Voltage before turn-on V

d

50 50 50 50 50 50

V

DRM

Rise of on-state current dI/dt 5050----A/µs

Case temperature 60 85 60 85 60 85 °C
Equivalent values for RC circuit 22/0.15 22/0.15 22/0.15 Ω/µF

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average on-state current at
case temperature

Maximum RMS on-state current I

Maximum peak, one half cycle,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 300 kA2√s

Maximum peak on-state voltage V

High level value of threshold voltage V

Low level value of forward slope resistance r

High level value of forward slope resistance r

Maximum holding current I

Typical latching current I

I

T(AV)

T(RMS)

I

TSM

TM

T(TO)1

T(TO)2

t1

t2

H

L

180° conduction, half sine wave

DC at 77 °C case temperature 135

t = 10 ms

t = 8.3 ms 2560

t = 10 ms

t = 8.3 ms 2160

t = 10 ms

t = 8.3 ms 27

t = 10 ms

t = 8.3 ms 19

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

ITM = 300 A, TJ = TJ maximum, tp = 10 ms sine wave pulse 2.15
(16.7 % x π x I
(I > π x I
(16.7 % x π x I
(I > π x I

T(AV)

), TJ = TJ maximum 1.52

T(AV)

T(AV)

), TJ = TJ maximum 2.34

T(AV)

TJ = 25 °C, IT > 30 A 600

TJ = 25 °C, VA = 12 V, Ra = 6 Ω, IG = 1 A 1000

V

DRM

RRM

RRM

< I < π x I

< I < π x I

I

TM

100 µs

V

DRM

Sinusoidal half wave,
initial T

= TJ maximum

J

), TJ = TJ maximum 1.46

T(AV)

), TJ = TJ maximum 2.32

T(AV)

I

TM

85 A

85 °C

2450

2060

30

21

A

V

A

kA2s

VLow level value of threshold voltage V

mΩ

mA

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Document Number: 94334

2 Revision: 29-Apr-08

ST083SPbF Series

Inverter Grade Thyristors

Vishay High Power Products

(Stud Version), 85 A

SWITCHING

PARAMETER SYMBOL TEST CONDITIONS

Maximum non-repetitive rate of rise
of turned on current

Typical delay time t

dI/dt T

d

= TJ max., V

J

= Rated V

DRM

, ITM = 2 x dI/dt 1000 A/µs

DRM

TJ = 25 °C, VDM = Rated VDM, ITM = 50 A DC, tp = 1 µs
Resistive load, gate pulse: 10 V, 5 Ω source

TJ = TJ maximum, ITM = 100 A,

Maximum turn-off time t

q

commutating dI/dt = 10 A/µs

= 50 V, tp = 200 µs, dV/dt = 200 V/µs

V

R

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of off-state voltage dV/dt

Maximum peak reverse and
off-state leakage current

I

I

RRM

DRM

= TJ maximum, linear to 80 % V

T

J

available on request

,

TJ = TJ maximum, rated V

DRM/VRRM

, higher value

DRM

applied 30 mA

VALUES

MIN. MAX.

0.80

10 20

500 V/µs

UNITS

µs

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak positive gate current I

Maximum peak positive gate voltage + V

Maximum peak negative gate voltage - V

Maximum DC gate currrent required to trigger I

Maximum DC gate voltage required to trigger V

Maximum DC gate current not to trigger I

Maximum DC gate voltage not to trigger V

GM

G(AV)

GM

GM

GM

GT

GT

GD

GD

TJ = TJ maximum, f = 50 Hz, d% = 50

TJ = TJ maximum, tp ≤ 5 ms

TJ = 25 °C, VA = 12 V, Ra = 6 Ω

TJ = TJ maximum, rated V

DRM/VRRM

applied

40

5

W

5A

20

5

V

200 mA

3V

20 mA

0.25 V

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating temperature range T

Maximum storage temperature range T

Maximum thermal resistance, junction to case R

Maximum thermal resistance, case to heatsink R

J

Stg

thJC

thCS

DC operation 0.195

Mounting surface, smooth, flat and greased 0.08

Non-lubricated threads

Mounting torque, ± 10 %

Lubricated threads

Approximate weight 130 g

Case style See dimensions - link at the end of datasheet TO-209AC (TO-94)

- 40 to 125

- 40 to 150

15.5

(137)

14

(120)

°C

K/W

N · m

(lbf · in)

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Revision: 29-Apr-08 3

ST083SPbF Series

Vishay High Power Products

Inverter Grade Thyristors

(Stud Version), 85 A

ΔR

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180° 0.034 0.025

120° 0.041 0.042

T

90° 0.052 0.056

= TJ maximum K/W

J

60° 0.076 0.079

30° 0.126 0.127

when devices operate at different conduction angles than DC

thJC

130

120

110

100

Temperature (°C)

90

Maximum Allowable Case

80

ST083S Series

(DC) = 0.195 K/W

R

thJC

Conduction angle

30° 60° 90° 120° 180°

030

10 40 7020 50 80

60

Average On-State Current (A)

Ø

90

130

120

110

100

90

Temperature (°C)

80

Maximum Allowable Case

70

060

ST083S Series

(DC) = 0.195 K/W

R

thJC

Conduction period

30°

60°

90°

120°

180°

20 8040 100

Average On-State Current (A)

Ø

120

Fig. 1 - Current Ratings Characteristics Fig. 2 - Current Ratings Characteristics

DC

140

180

160

140

120

100

80

60

Power Loss (W)

40

Maximum Average On-State

20

0

180°
120°

90°
60°
30°

0 102030405060708090

Average On-State Current (A)

RMS limit

Ø

Conduction angle

ST083S Series

= 125 °C

T

J

180

160

140

120

100

80

60

Power Loss (W)

40

Maximum Average On-State

20

0

25 50 75 100 125

0.3 K/W

0.4 K/W

0.5 K/W

0.8 K/W

1.2 K/W

0.2 K/W

Maximum Allowable Ambient Temperature (°C)

R

thSA

= 0.1 K/W - ΔR

Fig. 3 - On-State Power Loss Characteristics

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Document Number: 94334

4 Revision: 29-Apr-08

ST083SPbF Series

250

200

150

100

DC
180°
120°

90°

60°

30°

Power Loss (W)

50

Maximum Average On-State

0

20 40 60 80 100 120 1400

Average On-State Current (A)

2200

2000

1800

1600

1400

On-State Current (A)

Peak Half Sine Wave

1200

1000

At any rated load condition and with
rated V

ST083S Series

1 10 100

applied following surge

RRM

Number of Equal Amplitude Half Cycle

Current Pulses (N)

Fig. 5 - Maximum Non-Repetitive Surge Current

Inverter Grade Thyristors

(Stud Version), 85 A

RMS limit

Ø

Conduction period

ST083S Series

= 125 °C

T

J

Fig. 4 - On-State Power Loss Characteristics

Initial TJ = 125 °C
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

Vishay High Power Products

250

R

thSA

= 0.1 K/W - ΔR

200

150

100

Power Loss (W)

50

Maximum Average On-State

10 000

1000

Instantaneous On-State Current (A)

100

0.2 K/W

0.3 K/W

0.4 K/W

0.5 K/W

0.8 K/W

1.2 K/W

0

25 50 75 100 125

Maximum Allowable Ambient Temperature (°C)

TJ = 25 °C

1.0 1.5 2.0 2.5 3.0 3.5 4.0 4.5 5.0 5.5 6.0 6.5

Instantaneous On-State Voltage (V)

Fig. 7 - On-State Voltage Drop Characteristics

TJ = 125 °C

ST083S Series

2600

2400

2200

2000

1800

1600

1400

On-State Current (A)

Peak Half Sine Wave

1200

1000

0.01 0.1 1

Maximum non repetitive surge current
versus pulse train duration. Control
of conduction may not be maintained

ST083S Series

Fig. 6 - Maximum Non-Repetitive Surge Current

Initial TJ = 125 °C
No voltage reapplied
Rated V

RRM

reapplied

Pulse Train Duration (s)

1

Steady state value

= 0.195 K/W

R

thJC

(DC operation)

0.1

ST083S Series

0.01

- Transient Thermal Impedance (K/W)

thJC

Z

Fig. 8 - Thermal Impedance Z

0.01 0.1 1 100.001

Square Wave Pulse Duration (s)

thJC

Characteristic

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Revision: 29-Apr-08 5

ST083SPbF Series

Vishay High Power Products

160

ST083S Series

140

= 125 °C

T

J

120

100

80

Charge (µC)

60

- Maximum Reverse Recovery
Q

40

rr

20

2010 30 40 50 60 70 80 90 100

dI/dt - Rate of Fall of On-State Current (A/µs)

Fig. 9 - Reverse Recovered Charge Characteristics Fig. 10 - Reverse Recovery Current Characteristics

10 000

1000

2000

2500

100

3000

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

1500

ITM = 500 A

1000

500

t

p

ITM = 300 A

ITM = 50 A

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

D

400

ST083S Series
Sinusoidal pulse

= 60 °C

T

C

Inverter Grade Thyristors

(Stud Version), 85 A

ITM = 200 A

ITM = 100 A

DRM

100

50 Hz

200

120

110

100

90

80

70

60

50

Current (A)

40

30

- Maximum Reverse Recovery
I

20

rr

10

2010 30 40 50 60 70 80 90 100

dI/dt - Rate of Fall of Forward Current (A/µs)

10 000

1000

1000

1500

2000

100

2500

3000

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

ITM = 500 A

ITM = 200 A

ST083S Series
T

= 125 °C

J

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

V

D

400

500

ST083S Series
Sinusoidal pulse

t

p

= 85 °C

T

C

ITM = 300 A

ITM = 100 A

ITM = 50 A

= 80 % V

100

200

DRM

50 Hz

Fig. 11 - Frequency Characteristics

10 000

2500

500

1500

2000

3000

1000

100

Peak On-State Current (A)

10

10 100 1000 10 000

Pulse Basewidth (µs)

1000

ST083S Series
Trapezoidal pulse
T

C

t

p

dI/dt = 50 A/µs

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

D

50 Hz

200

400

100

= 60 °C

DRM

10 000

ST083S Series
Trapezoidal pulse

= 85 °C

T

C

t

p

dI/dt = 50 A/µs

1000

500

1500

100

Peak On-State Current (A)

2000

2500

10

10 100 1000 10 000

Pulse Basewidth (µs)

1000

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

D

400

50 Hz

200

DRM

100

Fig. 12 - Frequency Characteristics

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Document Number: 94334

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ST083SPbF Series

10 000

1000

100

Peak On-State Current (A)

10

10 100 1000 10 000

400

1500

2000

2500

3000

Pulse Basewidth (µs)

10 000

1000

0.1

0.2

0.3

100

Peak On-State Current (A)

10

10 100 1000 10 000

ST083S Series
Sinusoidal pulse

t

p

Pulse Basewidth (µs)

1000

0.5

500

ST083S Series
Trapezoidal pulse
T

t

p

dI/dt = 100 A/µs

20 joules per pulse

3

2

1

Inverter Grade Thyristors

(Stud Version), 85 A

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

D

= 60 °C

C

5

200

DRM

50 Hz

100

Fig. 13 - Frequency Characteristics

10

Vishay High Power Products

10 000

1000

100

Peak On-State Current (A)

10

10 100 1000 10 000

10 000

1000

100

Peak On-State Current (A)

10

10 100 1000 10 000

t

p

500

1500

2000

ST083S Series
Rectangular pulse

t

dI/dt = 50 A/µs

p

0.1

ST083S Series
Trapezoidal pulse

= 85 °C

T

C

dI/dt = 100 A/µs

400

2500

Pulse Basewidth (µs)

0.2

Pulse Basewidth (µs)

0.3

0.5

1

1000

2

Snubber circuit

= 22 Ω

R

s

= 0.15 µF

C

s

= 80 % V

V

D

200

100

20 joules
per pulse

7.5

4

DRM

50 Hz

Fig. 14 - Maximum On-State Energy Power Loss Characteristics

100

Rectangular gate pulse
a) Recommended load line for
rated dI/dt: 20 V, 10 Ω; t
b) Recommended load line for
≤ 30 % rated dI/dt: 10 V, 10 Ω

10

≤ 1 µs

t

r

≤ 1 µs

r

(b)

T

J

= 125 °C

T

J

= 25 °C

(a)

T

J

= 40 °C

(1) PGM = 10 W, tp = 20 ms

= 20 W, tp = 10 ms

(2) P

GM

= 40 W, tp = 5 ms

(3) P

GM

(4) P

= 60 W, tp = 3.3 ms

GM

1

(3)

(4)

V

GD

Instantaneous Gate Voltage (V)

0.1

0.001

0.01 0.1 1 10 100

(1) (2)

I

GD

Device: ST083S Series

Frequency limited by P

G(AV)

Instantaneous Gate Current (A)

Fig. 15 - Gate Characteristics

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ST083SPbF Series

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

ST 08 3 S 12 P F N 0 PbF

324

1 - Thyristor

2 - Essential part number

- 3 = Fast turn-off

3

4 - S = Compression bonding stud

- Voltage code x 100 = V

5

- P = Stud base 1/2"-20UNF-2A threads

6

- Reapplied dV/dt code (for tq test condition)

7

-tq code

8

- 0 = Eyelet terminals (gate and aux. cathode leads)

9

1 = Fast-on terminals (gate and aux. cathode leads)

- PbF = Lead (Pb)-free

10

Inverter Grade Thyristors

(Stud Version), 85 A

51

678910

(see Voltage Ratings table)

RRM

dV/dt - tq combinations available

dV/dt (V/µs)

t

(µs) 10

q

up to 800V

(µs)

t

q

only for
1000/1200 V

20

20

200

FN
FK

FK

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95003

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8 Revision: 29-Apr-08

Document Number: 94334