C&H Technology SD603C-C User Manual

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 600 A

FEATURES

• High power FAST recovery diode series

SD603C..C Series

• 1.0 to 2.0 µs recovery time

• High voltage ratings up to 2200 V

• High current capability

B-43

• Optimized turn-on and turn-off characteristics

• Low forward recovery

• Fast and soft reverse recovery

• Press PUK encapsulation

• Case style conform to JEDEC B-43

• Maximum junction temperature 125 °C

• Lead (Pb)-free

PRODUCT SUMMARY

I

F(AV)

600 A

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Snubber diode for GTO

• High voltage freewheeling diode

• Fast recovery rectifier applications

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS VALUES UNITS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

t

rr

T

J

T

hs

T

hs

50 Hz 8320

60 Hz 8715

50 Hz 346

60 Hz 316

Range 400 to 2200 V

T

J

600 A

55 °C

942 A

25 °C

1.0 to 2.0 µs

25

- 40 to 125

A

kA2s

°C

RoHS

COMPLIANT

Document Number: 93178 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 1

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SD603C..C Series

Vishay High Power Products

Fast Recovery Diodes

(Hockey PUK Version), 600 A

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE PEAK

TYPE NUMBER

VOLTAGE

CODE

RRM

AND OFF-STATE VOLTAGE

V

04 400 500

SD603C..S10C

08 800 900

10 1000 1100

12 1200 1300

SD603C..S15C

14 1400 1500

16 1600 1700

SD603C..S20C

20 2000 2100

22 2200 2300

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum average forward current
at heatsink temperature

Maximum RMS current I

F(RMS)

Maximum peak, one-cycle
non-repetitive forward current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 3460 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level of forward slope resistance r

High level of forward slope resistance r

Maximum forward voltage drop V

I

F(AV)

I

FSM

F(TO)1

F(TO)2

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 942

t = 10 ms

t = 8.3 ms 8715

t = 10 ms

t = 8.3 ms 7330

t = 10 ms

t = 8.3 ms 316

t = 10 ms

t = 8.3 ms 224

(16.7 % x π x I
(I > π x I
(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 1885 A, TJ = 25 °C; tp = 10 ms sinusoidal wave 2.97 V

FM

No voltage
reapplied

100 % V
reapplied

No voltage
reapplied

100 % V
reapplied

F(AV)

), TJ = TJ maximum 1.81

F(AV)

F(AV)

), TJ = TJ maximum 0.67

F(AV)

V

RRM

RRM

< I < π x I

< I < π x I

, MAXIMUM NON-REPETITIVE

RSM

PEAK VOLTAGE

V

Sinusoidal half wave,

= TJ maximum

initial T

J

), TJ = TJ maximum 1.36

F(AV)

), TJ = TJ maximum 0.87

F(AV)

I

MAXIMUM

RRM

AT T

= 125 °C

J

mA

45

600 (300) A

55 (75) °C

8320

7000

346

245

A

kA2s

V

mΩ

RECOVERY CHARACTERISTICS

CODE

MAXIMUM VALUE

AT T

= 25 °C

J

t

AT 25 % I

rr

RRM

(µs)

TEST CONDITIONS

I

pk

SQUARE

PULSE

dI/dt

(A/µs)

V

(V)

t

r

(A)

S10 1.0

S15 1.5 3.2 87 51

1000 25 - 30

S20 2.0 3.5 97 55

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2 Revision: 04-Aug-08

TYPICAL VALUES

= 125 °C

AT T

J

AT 25 % I

rr

(µs)

RRM

(µC)

2.0 45 34

I

Q

rr

I

rr

(A)

FM

t

rr

I

RM(REC)

t

Q

rr

dir

dt

Document Number: 93178

SD603C..C Series

Fast Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 600 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum operating junction
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

Mounting force, ± 10 % 9800 (1000) N (kg)

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet B-43

ΔR

CONDUCTION ANGLE

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.006 0.007 0.005 0.005

120° 0.008 0.008 0.008 0.008

90° 0.010 0.010 0.011 0.011

60° 0.015 0.015 0.016 0.015

30° 0.026 0.025 0.026 0.025

R

T

J

Stg

thJ-hs

DC operation single side cooled 0.076

DC operation double side cooled 0.038

when devices operate at different conduction angles than DC

thJ-hs

- 40 to 125

- 40 to 150

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

°C

K/W

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SD603C..C Series

Vishay High Power Products

130

120

110

100

90

80

70

0 50 100 150 200 250 300 350

Maximum Allowable Heatsink Temperat ure (°C)

Ave ra ge Fo rw a rd Cu rrent (A)

Fig. 1 - Current Ratings Characteristics

130

120

110

100

90

80

70

60

0 100 200 300 400 500

Maximum Allowa ble Heatsink Temperature (°C)

Ave rag e Forwa rd C urre nt (A)

Fig. 2 - Current Ratings Characteristics

SD 6 0 3 C . . C Se r ie s
(Single Side Cooled)
R (DC) = 0.076 K/ W

thJ-hs

Conduction Angle

60°

30°

SD 6 0 3 C . . C Se r i e s
(Single Side Cooled)
R ( DC) = 0.076 K/W

thJ-hs

30°

60°

90°

Cond uct ion Period

90°

120°

180°

120°

Fast Recovery Diodes

(Hockey PUK Version), 600 A

180°

Maximum Allowable Heatsink Temperature (°C)

DC

Maximum Average Forward Power Loss (W)

130

120

110

100

90

80

70

60

50

40

0 200 400 600 800 1000

SD603C. .C Se ries
(Double Side Cooled)
R (DC ) = 0.038 K/ W

thJ-hs

Conduction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

DC

Fig. 4 - Current Ratings Characteristics

1800

1600

1400

1200

1000

800

600

400

200

0

180°
120°

90°
60°
30°

RM S Li mi t

Conduction Angle

SD603C..C Series
T = 125°C

J

0 100200300400500600

Average Forward Current (A)

Fig. 5 - Forward Power Loss Characteristics

130

120

110

100

90

80

70

60

50

0 100 200 300 400 500 600 700

Maximum Allowable Heatsink Temperature (°C)

SD 60 3 C .. C Se r ie s
(Double Side Cooled)
R (DC) = 0.038 K/W

thJ-hs

Cond uction Angle

30°

60°

90°

Ave rage Forwa rd C urre nt ( A)

Fig. 3 - Current Ratings Characteristics

120°

180°

2500

DC

180°

2000

1500

1000

Maximum Average Forward Power Loss (W)

120°

90°
60°
30°

RM S Lim i t

Cond uc tion Period

500

0

0 200 400 600 800 1000

Average Forward Current (A)

SD 6 03 C .. C Se r ie s
T = 125°C

J

Fig. 6 - Forward Power Loss Characteristics

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Document Number: 93178

4 Revision: 04-Aug-08

SD603C..C Series

Fast Recovery Diodes

(Hockey PUK Version), 600 A

8000

At Any Rated Load Condition and With

7500

Ra ted V App lied Follow ing Surg e.

7000

6500

6000

5500

5000

4500

4000

3500

SD603C. .C Ser ies

3000

Pe a k Ha l f Sine Wave Forward Current (A)

2500

110100

Number of Equal Amplitude Ha lf Cycle Current Pulses (N)

Fig. 7 - Maximum Non-Repetitive Surge Current

9000

8000

7000

6000

5000

4000

3000

Pe ak Ha lf Sine Wave Forward Current (A)

2000

0.01 0.1 1

Fig. 8 - Maximum Non-Repetitive Surge Current

RRM

Init ial T = 125°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Single and Double Side Cooled

Maximum Non Rep etitive Surge Current

SD 6 0 3 C . . C Se r i e s

Versus Pulse Train Duration.

Pulse Train Duration (s)

Init ia l T = 125 °C
No V o lt ag e Rea pp lie d
Rat ed V Re ap plied

RRM

J

Single and Double Side Cooled

Vishay High Power Products

10000

1000

T = 25 ° C

J

T = 125 °C

100

Instanta neous Fo rwa rd Current (A)

10

.5 1.5 2.5 3.5 4.5 5.5 6.5 7.5 8.5

Instantaneous Forward Voltage (V)

Fig. 9 - Forward Voltage Drop Characteristics

0.1

SD 6 0 3 C . . C Se r ie s

thJ-hs

0.01

0.001

Tran sie nt Th erm al Imp eda nce Z (K/ W)

0.001 0.01 0.1 1 10 100

Sq u a r e W a v e Pu l se D u ra t i o n ( s)

Fig. 10 - Thermal Impedance Z

J

SD603C..C Se ries

St e a d y St a t e V a l u e :

R = 0. 076 K/ W

thJ-hs

(Single Side Cooled)

R = 0. 038 K/ W

thJ-hs

(Double Side Cooled)
(DC Operation)

Characteristics

thJ-hs

100

V

80

60

40

Forward Recovery (V)

20

FP

0

0 200 400 600 800 100012001400160018002000

I

Ra t e Of f Ri se O f Fo rw a r d C u r re n t d i / d t ( A / u se c )

T = 12 5° C

J

T = 25 °C

J

SD 60 3 C . . S20 C Se r i e s

Fig. 11 - Typical Forward Recovery Characteristics

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Revision: 04-Aug-08 5

SD603C..C Series

Vishay High Power Products

2.2

2.1

2

1.9

1.8

1.7

M a xi m um Re v e rse Re c o v e r y Tim e - Trr ( µ s)

1.6

Rat e Of Fa ll O f Forw a rd C urrent - d i/ dt (A/ µs)

Fig. 12 - Recovery Time Characteristics

130

120

110

100

90

80

70

60

50

40

30

20

M a xi m um Re v e r se Re c o v er y C ha rg e - Q r r ( µ C )

Ra t e O f Fa l l O f Fo r w a rd C u rr en t - d i / d t (A / µ s)

Fig. 13 - Recovery Charge Characteristics

SD603C..S10C Series
T = 125 ° C; V = 30V

J

SD 60 3C . . S1 0C Se r i e s
T = 125 °C ; V = 30V

J

10 20 30 40 50 60 70 80 90 100

r

I = 1000 A

FM

Sq u a r e Pu l se

250 A

I = 1 000 A

FM

Sq u a r e P u l se

500 A

r

500 A

250 A

Fast Recovery Diodes

(Hockey PUK Version), 600 A

00101

Rate Of Fall Of Forward Current - di/dt (A/µs)

Fig. 15 - Recovery Time Characteristics

Rate Of Fall Of Forward Current - di/d t (A/µs)

Fig. 16 - Recovery Charge Characteristics

4

SD603C ..S15C Series
T = 125 °C ; V = 30V

J

3.5

3

2.5

Ma ximum Reverse Rec overy Time - Trr (µs)

2

200

180

160

140

120

100

80

60

40

10 20 30 40 50 60 70 80 90 100

Maximum Reverse Recovery Cha rge - Qrr (µC)

I = 10 00 A

FM

Sq u a r e Pu l se

500 A

250 A

I = 1000 A

FM

Sq u a r e P u l s e

500 A

250 A

SD 60 3 C . . S1 5C Se r i e s
T = 125 °C; V = 30V

J

r

00101

r

120

110

100

90

80

70

60

50

40

30

20

10

Maximum Reverse Recovery Current - Irr (A)

Ra t e O f Fa l l O f Fo r wa r d C ur re n t - d i / d t (A / µ s)

I = 1000 A

FM

Sq u a r e P u l se

500 A

250 A

SD 60 3 C . . S1 0C Se r i e s
T = 1 25 ° C ; V = 30 V

J

10 20 30 40 50 60 70 80 90 100

r

Fig. 14 - Recovery Current Characteristics

140

130

120

110

100

90

80

70

60

50

40

30

20

Maximum Reverse Recovery Current - Irr (A)

10 20 30 40 50 60 70 80 90 100

Rate Of Fa ll Of Fo rward Current - di/d t (A/µs)

I = 1000 A

FM

Sq u a re Pu l se

500 A

250 A

SD 60 3 C . . S1 5C Series
T = 125 °C; V = 30V

J

r

Fig. 17 - Recovery Current Characteristics

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Document Number: 93178

6 Revision: 04-Aug-08

SD603C..C Series

Fast Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 600 A

4.5
SD603C..S20C Series

3.5

4

T = 125 °C; V = 30V

J

r

I = 1000 A

FM

Sq u a r e Pu l se

3

500 A

2.5

Maximum Reverse Recovery Time - Trr (µs)

2

Ra te O f Fa ll Of Forwa rd C urrent - di /d t (A/ µs)

250 A

00101

Fig. 18 - Recovery Time Characteristics Fig. 19 - Recovery Charge Characteristics

150

140

130

120

110

100

90

80

70

60

50

40

30

20

Maximum Re verse Recovery Current - Irr (A)

10 20 30 40 50 60 70 80 90 100

Rat e Of Fa ll Of Forward Current - d i/dt (A/ µs)

I = 1 000 A

FM

Sq u a r e Pu l se

500 A

250 A

SD 60 3C . . S2 0C Se r i e s
T = 125 °C; V = 30V

J

r

200

I = 1000 A

180

FM

Sq u a r e P ul se

160

140

500 A

120

100

80

60

40

10 20 30 40 50 60 70 80 90 100

Ma ximum Re verse Re cov ery Ch arge - Qrr (µC)

Rate Of Fa ll Of Forward Current - di/d t (A/µs)

250 A

SD 6 0 3 C . . S2 0C Se r i e s
T = 125 °C ; V = 30V

J

r

Fig. 20 - Recovery Current Characteristics

1E4

1

1E3

0.04

0.02

1E2

Peak Forward Current (A)

0.01

SD603C ..S10C Series
Sinusoid al Pulse
T = 1 25 ° C , V = 11 2 0 V

J

tp

dv/dt = 1000V/µs

0.4

0.2

0.1

RRM

1E1

1E11E21E31E4

Pu lse Ba se w id t h ( µs)

10

4

2

20 joules per pulse

20 joules per pulse

10

4

2

1

0.4

0.2

0.1

SD603C..S10C Series
Trapezoidal Pulse
T = 125°C, V = 1120V

tp

dv/dt = 1000V/µs; di/dt=50A/µs

RRM

J

1E11E21E31E4

Pu lse Ba se w id t h ( µs)

Fig. 21 - Maximum Total Energy Loss Per Pulse Characteristics

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Revision: 04-Aug-08 7

SD603C..C Series

Vishay High Power Products

1E4

10

4

2

1E3

0.04

1E2

Pea k Fo rwa rd C urre nt (A)

1E1

1E11E21E31E4

0.02

SD 6 0 3C . . S1 5 C Se r i e s
Si n u so i d a l P u l se
T = 1 25 ° C, V = 1 7 60 V

J

tp

dv/dt = 1000V/µs

Pu lse Ba se w i dt h ( µs)

1E4

1E3

1E2

Pe a k Forw a rd C urr en t ( A)

1E1

1E1 1E2 1E3 1E4

SD 60 3 C . . S20C Series
Sinusoida l Pulse
T = 125°C , V = 1760V

J

tp

dv/dt = 1000V/µs

Pu lse Ba se w i dt h ( µ s)

1

0.4

0.2

0.1

RRM

Fig. 22 - Maximum Total Energy Loss Per Pulse Characteristics

0.4

0.2

0.1

0.04

RRM

Fig. 23 - Maximum Total Energy Loss Per Pulse Characteristics

Fast Recovery Diodes

(Hockey PUK Version), 600 A

20 joules per pulse

1E1 1 E2 1 E3 1 E4

20 joules per pulse

10

4

2

1

1E1 1E2 1E3 1E4

SD603C ..S15C Serie s
Trapezoidal Pulse
T = 125°C , V = 1760V

tp

dv/dt = 1000V/µs; di/dt=50A/µs

RRM

J

Pul se Ba sew id t h ( µs)

SD 60 3 C . . S2 0 C Se ri e s
Trapezoidal Pulse
T = 125°C , V = 1760V

tp

dv/ dt = 1000V/ µs; di/ dt=50A/ µs

RRM

J

Pulse Ba se w id t h ( µs)

20 joules per pulse

10

4

2

1

0.4

0.2

20 joules per pulse

10

4

2

1

0.4

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Document Number: 93178

8 Revision: 04-Aug-08

SD603C..C Series

Fast Recovery Diodes

Vishay High Power Products

(Hockey PUK Version), 600 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95249

SD 60 3 C 22 S20 C

51324

67

1 - Diode

2 - Essential part number

3 - 3 = Fast recovery

4 - C = Ceramic PUK

5 - Voltage code x 100 = V

6 -t

7 - C = PUK case B-43

code (see Recovery Characteristics table)

rr

LINKS TO RELATED DOCUMENTS

(see Voltage Ratings table)

RRM

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Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

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