C&H Technology SD600N-R User Manual

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Suite 108
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B-8

PRODUCT SUMMARY

I

F(AV)

Vishay High Power Products

Standard Recovery Diodes

(Stud Version), 600 A

FEATURES

• Wide current range

• High voltage ratings up to 3200 V

• High surge current capabilities

• Stud cathode and stud anode version

• Standard JEDEC types

• Compression bonded encapsulations

•RoHS complaint

• Lead (Pb)-free

• Designed and qualified for industrial level

TYPICAL APPLICATIONS

• Converters

600 A

• Power supplies

• Machine tool controls

• High power drives

• Medium traction applications

SD600N/R Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

t

I

V

RRM

T

J

T

C

50 Hz 13 000 10 500

60 Hz 13 600 11 000

50 Hz 845 551

60 Hz 772 503

Range 400 to 2000 2200 to 3200 V

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

, MAXIMUM REPETITIVE

V

TYPE NUMBER

SD600N/R

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

22 2200 2300

28 2800 2900

32 3200 3300

RRM

PEAK REVERSE VOLTAGE

V

SD600N/R

04 to 20 22 to 32

600 A

92 54 °C

940

- 40 to 180 - 40 to 150 °C

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

AT T

UNITS

kA2s

I

MAXIMUM

RRM

= TJ MAXIMUM

J

mA

35

A

Document Number: 93551 For technical questions, contact: [e-mail]
Revision: 17-Apr-08 1

www.vishay.com

SD600N/R Series

Vishay High Power Products

Standard Recovery Diodes

(Stud Version), 600 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current
at case temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive surge current

2

Maximum I

Maximum I

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 8450 5510 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

f1

r

f2

FM

180° conduction, half sine wave

DC at TC = 75 °C (04 to 20), TC = 36 °C (25 to 32) 940

t = 10 ms

t = 8.3 ms 13 600 11 000

t = 10 ms

t = 8.3 ms 11 450 9250

t = 10 ms

t = 8.3 ms 772 503

t = 10 ms

t = 8.3 ms 546 356

(16.7 % x π x I
T

= TJ maximum

J

(I > π x I
(16.7 % x π x I

= TJ maximum

T

J

(I > π x I

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 0.87 0.88

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 0.31 0.38

F(AV)

Ipk = 1500 A, TJ = TJ maximum,
t

= 10 ms sinusoidal wave

p

F(AV)

F(AV)

J

),

),

= TJ maximum

SD600N/R

04 to 20 22 to 32

600 A

92 54 °C

570 375 A

100 °C

13 000 10 500

10 900 8830

845 551

598 390

0.78 0.84

0.35 0.40

1.31 1.44 V

UNITS

A

kA2s

V

mΩ

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to case

Maximum thermal resistance,
case to heatsink

Maximum allowed
mounting torque ± 10 %

R

R

T

J

Stg

thJC

thCS

DC operation 0.1

Mounting surface, smooth, flat and greased 0.04

Not-lubricated threads 50 Nm

Approximate weight 454 g

Case style See dimensions (link at the end of datasheet) B-8

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 17-Apr-08

SD600N/R

04 to 20 22 to 32

- 40 to 180 - 40 to 150

- 55 to 200

Document Number: 93551

UNITS

°C

K/W

SD600N/R Series

Standard Recovery Diodes

Vishay High Power Products

(Stud Version), 600 A

ΔR

Note

• The table above shows the increment of thermal resistance R

CONDUCTION

thJC

CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS

180°

120°

90°

60°

30°

180

170

160

150

140

130

120

110

100

90

80

Maximum Allowable Case Temperature (°C)

0 100 200 300 400 500 600 700

SD600N/ R Series (400V t o 2000V)

R (DC ) = 0.1 K/ W

thJC

30°

60°

Average Forward Current (A)

Fig. 1 - Current Ratings Characteristics

0.012 0.008

0.014 0.014

0.017 0.019

0.025 0.026

0.042 0.042

when devices operate at different conduction angles than DC

thJC

Conduction Angle

90°

120°

180°

T

= TJ maximum K/W

J

150

140

130

120

110

100

90

80

70

60

50

Maximum Allowable Case Temperature (°C)

SD600N/ R Se ries (2500V to 3200V)

0 100 200 300 400 500 600 700

Average Forward Current (A)

R (DC) = 0.1 K/W

thJC

Cond uction Angle

30°

60°

90°

120°

Fig. 3 - Current Ratings Characteristics

180°

180

170

160

150

140

130

120

110

100

90

80

70

Maximum Allowable Case Temperature (°C)

0 200 400 600 800 1000

SD600N/ R Series (400V t o 2000V)

R (DC) = 0.1 K/W

thJC

Conduction Period

30°

60°

90°

120°

180°

Average Forward Current (A)

Fig. 2 - Current Ratings Characteristics

DC

150

140

130

120

110

100

90

80

70

60

50

40

30

Maximum Allowable Case Temperature (°C)

SD 60 0 N / R Se r i e s ( 2 50 0V t o 32 0 0 V )

30°

0 200 400 600 800 1000

Average Forward Current (A)

R (DC) = 0.1 K/W

thJC

Cond uc tion Period

60°

90°

120°

180°

Fig. 4 - Current Ratings Characteristics

DC

Document Number: 93551 For technical questions, contact: [e-mail]

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Revision: 17-Apr-08 3

SD600N/R Series

Vishay High Power Products

800

700

600

500

400

300

200

100

0

Maximum Average Forward Pow er Loss (W)

1100

1000

900

800

700

600

500

400

300

200

100

0

Maximum Average Forward Power Loss (W)

0 200 400 600 800 1000

180°
120°

90°
60°
30°

0 100 200 300 400 500 600

Average Forward Current (A)

DC
180°
120°

90°

60°

30°

RM S Li m i t

Average Forward Current (A)

Standard Recovery Diodes

(Stud Version), 600 A

R

t

0

h

.

S

0

A

4

0

K

.

0

8

K

/

0

.

1

K

/

W

RM S Li m it

Conduction Angle

SD600N/ R Serie s
(400V t o 2000V)
T = 180°C

J

0

.

2

K

/

W

0

.

4

K

/

W

0

.

6

K

/

W

1

K

/

W

1

.

8

K

/

W

20 40 60 80 1 00 120 140 160 180

Maximum Allowable Ambient Temperature (°C)

Fig. 5 - Forward Power Loss Characteristics

R

t

h

S

A

=

0

.

0

4

K

/

W

0

.

0

8

K

/

W

0

.

1K

/

W

0

.

2

K

/

Conduction Period

SD600N/ R Series
(400V t o 2000V)
T = 180°C

J

W

0

.

4

K

/

W

0

.

6

K

/

W

1

K

/

W

1

.

8

K

/

W

20 40 60 80 100 120 140 160 180

Maximum Allowable Ambient Temperature (°C)

Fig. 6 - Forward Power Loss Characteristics

=

/

W

0

.

0

W

0

.

0

2K

2

K

/

W

-

/

W

­D

e

l

t

a

R

D

e

l

t

a

R

900

800

700

600

500

400

300

200

100

0

Maximum Average Forward Power Loss (W)

0 100 200 300 400 500 600

180°
120°

90°
60°
30°

RM S Li m i t

Conduction Angle

SD600N/ R Serie s
(2500V t o 3200V)
T = 150°C

J

Average Forward Current (A)

R

t

h

S

A

=

0

0

.

.

0

0

4

2

K

K

/

/

W

0

.

06

0

.

0

0

.

1

W

-

K

1

K

.

2

K

4

K

K

/

W

D

/

W

/

W

/

/

e

l

t

a

R

W

W

25 50 75 100 125 150

Maximum Allowable Ambient Temperature (°C)

Fig. 7 - Forward Power Loss Characteristics

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Document Number: 93551

4 Revision: 17-Apr-08

SD600N/R Series

12000

10000

8000

6000

Standard Recovery Diodes

(Stud Version), 600 A

1100

1000

900

800

700

600

500

400

300

200

100

Maximum Average Forward Power Loss (W)

At Any Rated Load Condition And With

Rated V Applied Following Surge.

DC
180°
120°

90°
60°
30°

RM S Li m i t

Cond uction Period

SD600N/ R Serie s
(2500V t o 3200V)
T = 150°C

0

0 100 200 300 400 500 600 700 800 900

Average Forward Current (A)

Fig. 8 - Forward Power Loss Characteristics

RRM

Initial T = 180°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

Vishay High Power Products

R

t

h

S

A

=

0

0

.

.

0

0

2

4

K

K

/

/

W

0

.

0

0

.

1

0

.

2

0

.

4

1

J

K

25 50 75 100 125 150

Maximum Allowable Ambient Temperature (°C)

W

6

K

K

K

/

-

K

/

/

/

W

D

/

W

W

W

W

e

l

t

a

10000

8000

R

At Any Rated Loa d Cond ition And With

Rated V Applied Following Surge.

RRM

Initial T = 150°C

J

@ 60 Hz 0.0083 s
@ 50 Hz 0.0100 s

6000

4000

SD600N/ R Series
(400V t o 2000V)

Peak Half Sine Wave Forward Current (A)

2000

110100

Number Of Eq ual Amp litud e Ha lf Cyc le Current Pulses (N)

Fig. 9 - Maximum Non-Repetitive Surge Current

14000

Maximum Non Repetitive Surge Current

Versus Pulse Train Durat ion.

12000

Initia l T = 180 °C

J

No Voltage Reapplied
Rated V Reapplied

10000

RRM

8000

6000

4000

SD 6 0 0 N / R Se r i e s
(400V t o 2000V)

Pe ak Ha lf Sin e Wa ve Fo rw a r d Cu rre n t ( A)

2000

0.01 0.1 1

Pulse Train Duration (s)

Fig. 10 - Maximum Non-Repetitive Surge Current

4000

SD 6 0 0N / R Se r i e s
(2500V t o 3200V)

Peak Half Sine Wave Forward Current (A)

2000

110100

Numb er Of Eq ual Amplitude Half Cycle Current Pulses (N)

Fig. 11 - Maximum Non-Repetitive Surge Current

12000

Maxim um Non Re pe titiv e Surg e Curre n t

Versus Pulse Train Duration.

Init ia l T = 150 °C

10000

No Voltage Reapplied
Rated V Reapplied

J

RRM

8000

6000

4000

SD 6 0 0 N / R Se r i e s
(2500V t o 3200V)

Peak Half Sine Wave Forward Current (A)

2000

0.01 0.1 1

Pulse Train Duration (s)

Fig. 12 - Maximum Non-Repetitive Surge Current

Document Number: 93551 For technical questions, contact: [e-mail]

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Revision: 17-Apr-08 5

SD600N/R Series

Vishay High Power Products

10000

T = 2 5 ° C

J

T = 18 0° C

1000

SD 6 00 N / R Se r i e s
(400V t o 2000V)

Instantaneous Forward Current (A)

100

01234

Instantaneous Forward Voltage (V)

Fig. 13 - Forward Voltage Drop Characteristics Fig. 14 - Forward Voltage Drop Characteristics

1

thJC

St e a d y St a t e V a l ue :
R = 0.1 K/ W

0.1

(DC Operation)

thJC

Standard Recovery Diodes

(Stud Version), 600 A

J

10000

T = 25 °C

J

T = 150°C

J

1000

SD 6 0 0N / R Se r i e s
(2500V t o 3200V)

Instantaneous Forward Current (A)

100

012345

Instantaneous Forward Voltage (V)

0.01

SD 60 0N / R Se r i e s

Transient Thermal Impedance Z (K/W)

0.001

0.001 0.01 0.1 1 10

Square Wa ve Pulse Dura t ion ( s)

Fig. 15 - Thermal Impedance Z

Characteristics

thJC

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6 Revision: 17-Apr-08

Document Number: 93551

SD600N/R Series

Standard Recovery Diodes

ORDERING INFORMATION TABLE

Device code

SD 60 0 N 32 P C

1 - Diode

2 - Essential part number

3 - 0 = Standard recovery

4 - N = Stud normal polarity (cathode to stud)

5 - Voltage code x 100 = V

6 - P = Stud base B-8 3/4" 16UNF-2A

- C = Ceramic cap

7

For metric device M24 x 1.5 contact factory

Vishay High Power Products

(Stud Version), 600 A

51324

R = Stud reverse polarity (anode to stud)

RRM

67

(see Voltage Ratings table)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95303

Document Number: 93551 For technical questions, contact: [e-mail]
Revision: 17-Apr-08 7

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DIMENSIONS in millimeters (inches)

Outline Dimensions

Vishay High Power Products

B-8

Ceramic housing

245 (9.645)
255 (10.04)

115 (4.52) MIN.

27.5 (1.08)
MAX.

12 (0.47) MIN.

38 (1.5)

DIA. MAX.

26 (1.023) MAX.

10.5 (0.41) DIA.

C.S. 70 mm

47 (1.85)

MAX.

21 (0.83) MAX.

5 (0.20) ± 0.3 (0.01)

2

80 (3.15)

MAX.

SW 45

3/4"-16UNF-2A *

*For metric device: M24 x 1.5 - length 21 (0.83) MAX.

contact factory

Document Number: 95303 For technical questions concerning discrete products, contact: [e-mail]
Revision: 11-Apr-08 For technical questions concerning module products, contact: [e-mail]

www.vishay.com

1