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B-8
PRODUCT SUMMARY
I
F(AV)
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 600 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC types
• Compression bonded encapsulations
•RoHS complaint
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Converters
600 A
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
SD600N/R Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
T
J
T
C
50 Hz 13 000 10 500
60 Hz 13 600 11 000
50 Hz 845 551
60 Hz 772 503
Range 400 to 2000 2200 to 3200 V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM REPETITIVE
V
TYPE NUMBER
SD600N/R
VOLTAGE
CODE
04 400 500
08 800 900
12 1200 1300
16 1600 1700
20 2000 2100
22 2200 2300
28 2800 2900
32 3200 3300
RRM
PEAK REVERSE VOLTAGE
V
SD600N/R
04 to 20 22 to 32
600 A
92 54 °C
940
- 40 to 180 - 40 to 150 °C
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
AT T
UNITS
kA2s
I
MAXIMUM
RRM
= TJ MAXIMUM
J
mA
35
A
Document Number: 93551 For technical questions, contact: ind-modules@vishay.com
Revision: 17-Apr-08 1
www.vishay.com
SD600N/R Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 600 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle forward,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 8450 5510 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
f1
r
f2
FM
180° conduction, half sine wave
DC at TC = 75 °C (04 to 20), TC = 36 °C (25 to 32) 940
t = 10 ms
t = 8.3 ms 13 600 11 000
t = 10 ms
t = 8.3 ms 11 450 9250
t = 10 ms
t = 8.3 ms 772 503
t = 10 ms
t = 8.3 ms 546 356
(16.7 % x π x I
T
= TJ maximum
J
(I > π x I
(16.7 % x π x I
= TJ maximum
T
J
(I > π x I
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
Sinusoidal half wave,
initial T
reapplied
100 % V
RRM
reapplied
< I < π x I
F(AV)
), TJ = TJ maximum 0.87 0.88
F(AV)
< I < π x I
F(AV)
), TJ = TJ maximum 0.31 0.38
F(AV)
Ipk = 1500 A, TJ = TJ maximum,
t
= 10 ms sinusoidal wave
p
F(AV)
F(AV)
J
),
),
= TJ maximum
SD600N/R
04 to 20 22 to 32
600 A
92 54 °C
570 375 A
100 °C
13 000 10 500
10 900 8830
845 551
598 390
0.78 0.84
0.35 0.40
1.31 1.44 V
UNITS
A
kA2s
V
mΩ
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed
mounting torque ± 10 %
R
R
T
J
Stg
thJC
thCS
DC operation 0.1
Mounting surface, smooth, flat and greased 0.04
Not-lubricated threads 50 Nm
Approximate weight 454 g
Case style See dimensions (link at the end of datasheet) B-8
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 17-Apr-08
SD600N/R
04 to 20 22 to 32
- 40 to 180 - 40 to 150
- 55 to 200
Document Number: 93551
UNITS
°C
K/W