C&H Technology SD300N-R User Manual

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PRODUCT SUMMARY
DO-205AB (DO-9)
RoHS
COMPLIANT
I
F(AV)
Standard Recovery Diodes
(Stud Version), 380 A
FEATURES
• Wide current range
• High voltage ratings up to 3200 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC types
• Compression bonded encapsulations
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Converters
380 A
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
SD300N/R Series
Vishay Semiconductors
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
I
F(AV)
I
F(RMS)
I
FSM
2
t
I
V
RRM
T
J
T
C
50 Hz 6050
60 Hz 6335
50 Hz 183
60 Hz 167
Range 1600 to 2000 2500 to 3200 V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
, MAXIMUM REPETITIVE
V
TYPE NUMBER
SD300N/R
VOLTAGE
CODE
16 1600 1700
20 2000 2100
25 2500 2600
28 2800 2900
32 3200 3300
RRM
PEAK REVERSE VOLTAGE
V
SD300N/R
16 to 20 25 to 32
380 A
100 70 °C
595 425
- 40 to 180 - 40 to 150 °C
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
UNITS
kA2s
I
MAXIMUM
RRM
AT T
= TJ MAXIMUM
J
A
mA
15
Document Number: 93545 For technical questions, contact: ind-modules@vishay.com Revision: 17-Apr-08 1
www.vishay.com
SD300N/R Series
Vishay Semiconductors
Standard Recovery Diodes
(Stud Version), 380 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS
Maximum average forward current at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle forward, non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
t for fusing I2t t = 0.1 to 10 ms, no voltage reapplied 1830 kA2s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward slope resistance
High level value of forward slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
f1
r
f2
FM
180° conduction, half sine wave
DC at TC = 88 °C (02 to 24), TC = 91 °C (25 to 32) 595 425
t = 10 ms
t = 8.3 ms 6335
t = 10 ms
t = 8.3 ms 5330
t = 10 ms
t = 8.3 ms 167
t = 10 ms
t = 8.3 ms 118
(16.7 % x x I T
= TJ maximum
J
(I > x I (16.7 % x x I
= TJ maximum
T
J
(I > x I
No voltage reapplied
100 % V
RRM
reapplied
No voltage
Sinusoidal half wave, initial T
reapplied
100 % V
RRM
reapplied
< I < x I
F(AV)
), TJ = TJ maximum 1.05
F(AV)
< I < x I
F(AV)
), TJ = TJ maximum 0.66
F(AV)
Ipk = 1180 A, TJ = TJ maximum, t
= 10 ms sinusoidal wave
p
F(AV)
F(AV)
J
),
),
= TJ maximum
SD300N/R
16 to 20 25 to 32
380 270 A
100 100 °C
300 380 A
125 70 °C
6050
5090
183
129
0.95
0.75
1.83 V
UNITS
A
kA2s
V
m
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum junction operating temperature range
Maximum storage temperature range T
Maximum thermal resistance, junction to case
Maximum thermal resistance, case to heatsink
Maximum allowed mounting torque ± 10 %
R
R
T
J
Stg
thJC
thCS
DC operation 0.11
Mounting surface, smooth, flat and greased 0.04
Not-lubricated threads 27 Nm
Approximate weight 250 g
Case style See dimensions (link at the end of datasheet) DO-205AB (DO-9)
www.vishay.com For technical questions, contact: ind-modules@vishay.com 2 Revision: 17-Apr-08
SD300N/R
16 to 20 25 to 32
- 40 to 180 - 40 to 150
- 55 to 200
Document Number: 93545
UNITS
°C
K/W
80
90
100
110
120
130
140
150
160
170
180
0 50 100 150 200 250 300 350 400
30°
60°
90°
120°
180°
Average Forward Current (A)
Cond uction Ang le
Maximum Allowab le Case Temperature (°C)
R (DC) = 0.11 K/ W
thJC
SD300N/ RSeries (1600V t o 2000V)
80
90
100
110
120
130
140
150
160
170
180
0 100 200 300 400 500 600 700
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Conduction Period
Maximum Allowa ble Ca se Temperature (°C)
R (DC) = 0.11 K/ W
thJC
SD300N/ R Series ( 1600V t o 2000V )
90
100
110
120
130
140
150
050100150200250300
30°
60°
90°
120°
180°
Average Forward Current (A)
Cond uction Angle
Maximum Allowa ble Case Temperature (°C)
R (DC) = 0.11 K/W
thJC
SD300N/ R Se rie s (2500V t o 3200V)
80
90
100
110
120
130
140
150
0 100 200 300 400 500
30°
60°
90°
180°
DC
120°
Average Forward Current (A)
Conduction Period
Maximum Allowable Case Temperature (°C)
SD 30 0N / R Se r i e s ( 2 50 0 V t o 3 20 0V )
R (DC) = 0.11 K/ W
thJC
SD300N/R Series
Standard Recovery Diodes
Vishay Semiconductors
(Stud Version), 380 A
R
CONDUCTION ANGLE SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION TEST CONDITIONS UNITS
Note
• The table above shows the increment of thermal resistance R
CONDUCTION
thJC
180° 0.019 0.013
120° 0.023 0.023
90° 0.028 0.030
60° 0.042 0.044
30° 0.073 0.074
when devices operate at different conduction angles than DC
thJC
T
= TJ maximum K/W
J
Fig. 1 - Current Ratings Characteristics
Document Number: 93545 For technical questions, contact: ind-modules@vishay.com Revision: 17-Apr-08 3
Fig. 2 - Current Ratings Characteristics
Fig. 3 - Current Ratings Characteristics
Fig. 4 - Current Ratings Characteristics
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SD300N/R Series
20 40 60 80 100 120 140 160 180
Maximum Allowa ble Ambient Temperature (°C)
R
=
0
.
0
3
K
/
W
­D
e
l
t
a
R
t
h
S
A
0
.
0
6
K
/
W
0
.
4
K
/
W
0
.
2
K
/
W
0
.
1
K
/
W
0
.
6
K
/
W
0
.
8
K
/
W
2
K
/
W
0
100
200
300
400
500
600
700
0 50 100 150 200 250 300 350 400
180° 120°
90° 60° 30°
RM S Li m i t
Cond uction Ang le
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD 3 0 0N / R Se r i e s
(1600V t o 2000V)
T = 18 0 °C
J
25 50 75 100 125 150
Maximum Allowa ble Ambient Temp erature (°C)
R
=
0
.
0
2
K
/
W
­D
e
l
t
a
R
t
h
S
A
0
.
1
K
/
W
0
.
0
6
K
/
W
0
.
2
K
/
W
0
.
4K
/
W
0
.
8
K
/
W
1
.
8
K
/
W
0
100
200
300
400
500
600
700
0 50 100150200250300350400
180° 120°
90° 60° 30°
RM S Li m i t
Cond uction Angle
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD300N/ R Se rie s (2500V to 3200V) T = 150°C
J
Vishay Semiconductors
900
800
180° 120°
700
600
500
RM S Li m it
400
300
200
100
0
Maximum Average Forward Power Loss (W)
0 100 200 300 400 500 600
Standard Recovery Diodes
(Stud Version), 380 A
Fig. 5 - Forward Power Loss Characteristics
DC
90° 60° 30°
Conduction Period
SD300N/ R Se ries
(1600V to 2000V)
T = 18 0° C
J
Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
R
t
h
S
A
=
0
.
0
0
.
3
0
6
K
K
/
W
/
W
­D
0
.
1
K
0
.
2
K
/
0
.
4
K
0
.
6
K
0
.
8
K
2
K
/
W
e
l
t
a
/
W
W
/
W
/
W
/
W
R
20 40 60 80 100 120 140 160 180
Maximum Allowable Ambient Temperature (°C)
www.vishay.com For technical questions, contact: ind-modules@vishay.com 4 Revision: 17-Apr-08
Fig. 7 - Forward Power Loss Characteristics
Document Number: 93545
25 50 75 100 125 150
Maximum Allowable Ambient Temperature (°C)
R
=
0
.
0
2
K
/
W
­D
e
l
t
a
R
t
h
S
A
0
.
0
6
K
/
W
0
.
1
K
/
W
1
.
8
K
/
W
0
.
8
K
/
W
0
.
4
K
/
W
0
.
2
K
/
W
0
100
200
300
400
500
600
700
800
900
0 1 00 200 300 4 00 500 600
DC 180° 120°
90°
60°
30°
RM S Li m i t
Conduction Period
Maximum Average Forward Power Loss (W)
Average Forward Current (A)
SD300N/ R Se rie s (2500V to 3200V) T = 150°C
J
1500
2000
2500
3000
3500
4000
4500
5000
5500
110100
Number Of Equal Amp litud e Half Cycle Current Pulses (N)
Peak Half Sine Wave Forward Current (A)
SD 30 0N / R Se r i e s
Ini t ia l TJ = TJ max.
@ 60 Hz 0.0083 s @ 5 0 H z 0 . 01 00 s
At Any Rated Load Condition And With
Rate d V Ap plied Following Surge.
RRM
1000
1500
2000
2500
3000
3500
4000
4500
5000
5500
6000
6500
0.01 0.1 1
Pulse Tra in Du ra t io n ( s)
Pe a k Ha lf Sin e Wa ve Fo rw a rd Cu r re n t ( A)
Versus Pulse Train Duratio n.
Maximum Non Repe titive Surge C urrent
SD 30 0N / R Se r i e s
Init ia l T = T m ax.
No Vo lt a ge Rea p p lied Rat ed V Reap plied
RRM
J
J
SD300N/R Series
Standard Recovery Diodes
(Stud Version), 380 A
Fig. 8 - Forward Power Loss Characteristics
Vishay Semiconductors
Fig. 9 - Maximum Non-Repetitive Surge Current
Document Number: 93545 For technical questions, contact: ind-modules@vishay.com Revision: 17-Apr-08 5
Fig. 10 - Maximum Non-Repetitive Surge Current
10000
T = 25 ° C
J
1000
Instantaneous Forward Current (A)
100
0.5 1 1. 5 2 2.5 3 3. 5
Fig. 11 - Forward Voltage Drop Characteristics
Instantaneous Forward Voltage (V)
T = T m a x .
J
J
SD300N/ R Serie s
www.vishay.com
SD300N/R Series
0.001
0.01
0.1
1
0.001 0.01 0.1 1 10
Sq uare Wave Pulse Duration (s)
thJC
Tr a n si e n t Thermal Impe danc e Z (K/W)
Steady Stat e Value: R = 0.11 K/W (DC Operation)
SD 30 0N / R Se ri e s
thJC
Device code
51324
67
SD 30 0 N 32 P C
1 - Diode
2 - Essential part number
3 - 0 = Standard recovery
4 - N = Stud normal polarity (cathode to stud)
R = Stud reverse polarity (anode to stud)
5 - Voltage code x 100 = V
RRM
(see Voltage Ratings table)
6 - P = Stud base DO-205AB (DO-9) 3/4" 16UNF-2A
7
- C = Ceramic housing
For metric device M16 x 1.5 contact factory
Vishay Semiconductors
Fig. 12 - Thermal Impedance Z
ORDERING INFORMATION TABLE
Standard Recovery Diodes
(Stud Version), 380 A
Characteristics
thJC
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95301
www.vishay.com For technical questions, contact: ind-modules@vishay.com 6 Revision: 17-Apr-08
Document Number: 93545
DIMENSIONS in millimeters (inches)
Outline Dimensions
Vishay Semiconductors
DO-205AB (DO-9)
Ceramic housing
210 (8.27)
± 10 (0.39)
82 (3.23)
MIN.
DIA. 8.5 (0.33) NOM.
DIA. 27.5
(1.08) MAX.
21 (0.82)
MAX.
9.5 (0.37) MIN.
16 (0.63)
MAX.
19 (0.75)
MAX.
39 (1.53)
MAX.
C.S. 35 mm
(0.054 s.i.)
SW 32
4 (0.16)
MAX.
2
3/4"-16UNF-2A*
Document Number: 95301 For technical questions, contact: indmodules@vishay.com Revision: 09-Apr-08 1
*For metric device: M16 x 1.5
contact factory
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Legal Disclaimer Notice
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Vishay
Disclaimer
ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.
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Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment (EEE) - recast, unless otherwise specified as non-compliant.
Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.
Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21 conform to JEDEC JS709A standards.
Revision: 02-Oct-12
1
Document Number: 91000
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