C&H Technology SD200N-R User Manual
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DO-205AC (DO-30)
PRODUCT SUMMARY
I
F(AV)
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 200 A
FEATURES
• Wide current range
• High voltage ratings up to 2400 V
• High surge current capabilities
• Stud cathode and stud anode version
• Standard JEDEC types
• Compression bonded encapsulations
•RoHS complaint
• Lead (Pb)-free
• Designed and qualified for industrial level
TYPICAL APPLICATIONS
• Converters
200 A
• Power supplies
• Machine tool controls
• High power drives
• Medium traction applications
SD200N/R Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
PARAMETER TEST CONDITIONS
I
F(AV)
I
F(RMS)
I
FSM
2
I
t
V
RRM
T
J
T
C
50 Hz 4700
60 Hz 4920
50 Hz 110
60 Hz 101
Range 1600 to 2000 2400 V
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM REPETITIVE
TYPE NUMBER
SD200N/R
VOLTAGE
CODE
16 1600 1700
24 2400 2500
RRM
PEAK REVERSE VOLTAGE
V
SD200N/R
1600 to 2000 2400
200 A
110 °C
314
- 40 to 180 150 °C
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK REVERSE VOLTAGE
V
I
RRM
AT T
= TJ MAXIMUM
J
UNITS
A
kA2s
MAXIMUM
mA
1520 2000 2100
Document Number: 93541 For technical questions, contact: ind-modules@vishay.com
Revision: 17-Apr-08 1
www.vishay.com
SD200N/R Series
Vishay High Power Products
Standard Recovery Diodes
(Stud Version), 200 A
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current
at case temperature
Maximum average forward current
at case temperature
Maximum RMS forward current I
Maximum peak, one-cycle forward,
non-repetitive surge current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 1100 kA2√s
Low level value of threshold voltage V
High level value of threshold voltage V
Low level value of forward
slope resistance
High level value of forward
slope resistance
Maximum forward voltage drop V
I
F(AV)
F(RMS)
I
FSM
F(TO)1
F(TO)2
r
f1
r
f2
FM
180° conduction, half sine wave
DC at 95 °C case temperature 314
t = 10 ms
t = 8.3 ms 4920
t = 10 ms
t = 8.3 ms 4140
t = 10 ms
t = 8.3 ms 101
t = 10 ms
t = 8.3 ms 71
(16.7 % x π x I
T
= TJ maximum
J
(I > π x I
(16.7 % x π x I
T
= TJ maximum
J
(I > π x I
No voltage
reapplied
100 % V
RRM
reapplied
No voltage
Sinusoidal half wave,
= TJ maximum
initial T
J
reapplied
100 % V
RRM
reapplied
< I < π x I
F(AV)
), TJ = TJ maximum 1.00
F(AV)
< I < π x I
F(AV)
), TJ = TJ maximum 0.64
F(AV)
F(AV)
F(AV)
),
),
Ipk = 630 A, TJ = TJ maximum,
t
= 10 ms sinusoidal wave
p
200 A
110 °C
220 A
100 °C
4700
3950
110
78
0.90
0.79
1.40 V
kA
mΩ
A
2
s
V
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS
Maximum junction operating
temperature range
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Maximum thermal resistance,
case to heatsink
Maximum allowed
mounting torque ± 10 %
T
J
Stg
R
thJC
R
thCS
DC operation 0.23
Mounting surface, smooth, flat and greased 0.08
Not-lubricated threads 14 Nm
Approximate weight 120 g
Case style See dimensions (link at the end of datasheet) DO-205AC (DO-30)
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 17-Apr-08
SD200N/R
1600 to 2000 2400
- 40 to 180 - 40 to 150
- 55 to 200
Document Number: 93541
UNITS
°C
K/W
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