C&H Technology SD1100C-C User Manual

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B-43

PRODUCT SUMMARY

I

F(AV)

Vishay High Power Products

Standard Recovery Diodes

(Hockey PUK Version), 1400 A

FEATURES

• Wide current range

• High voltage ratings up to 3200 V

• High surge current capabilities

• Diffused junction

• Hockey PUK version

• Case style B-43

• Lead (Pb)-free

TYPICAL APPLICATIONS

• Converters

• Power supplies

1400 A

• Machine tool controls

• High power drives

• Medium traction applications

SD1100C..C Series

RoHS

COMPLIANT

MAJOR RATINGS AND CHARACTERISTICS

PARAMETER TEST CONDITIONS

I

F(AV)

I

F(RMS)

I

FSM

2

I

t

V

RRM

T

J

T

hs

T

hs

50 Hz 13 000 10 500

60 Hz 13 600 11 000

50 Hz 846 551

60 Hz 772 503

Range

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

, MAXIMUM REPETITIVE PEAK

TYPE NUMBER

SD1100C..C

VOLTAGE

CODE

04 400 500

08 800 900

12 1200 1300

16 1600 1700

20 2000 2100

25 2500 2600

30 3000 3100

32 3200 3300

RRM

REVERSE VOLTAGE

V

SD1100C..C

04 TO 20 25 TO 32

1400 1100 A

55 55 °C

2500 2000 A

25 25 °C

400 to 2000 2500 to 3200 V

- 40 to 180 - 40 to 150 °C

V

, MAXIMUM NON-REPETITIVE

RSM

PEAK REVERSE VOLTAGE

V

AT T

UNITS

kA2s

I

MAXIMUM

RRM

= TJ MAXIMUM

J

mA

35

A

Document Number: 93535 For technical questions, contact: [e-mail]
Revision: 14-May-08 1

www.vishay.com

SD1100C..C Series

Vishay High Power Products

Standard Recovery Diodes

(Hockey PUK Version),

1400 A

FORWARD CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS

Maximum average forward current
at heatsink temperature

Maximum RMS forward current I

Maximum peak, one-cycle forward,
non-repetitive current

Maximum I

Maximum I

2

t for fusing I2t

2

√t for fusing I2√t t = 0.1 to 10 ms, no voltage reapplied 8460 5510 kA2√s

Low level value of threshold voltage V

High level value of threshold voltage V

Low level value of forward
slope resistance

High level value of forward
slope resistance

Maximum forward voltage drop V

I

F(AV)

F(RMS)

I

FSM

F(TO)1

F(TO)2

r

r

180° conduction, half sine wave
Double side (single side) cooled

25 °C heatsink temperature double side cooled 2500 2000

t = 10 ms

t = 8.3 ms 13 600 11 000

t = 10 ms

t = 8.3 ms 11 450 9250

t = 10 ms

t = 8.3 ms 772 503

t = 10 ms

t = 8.3 ms 546 356

(16.7 % x π x I
(I > π x I

(16.7 % x π x I

f1

(I > π x I

f2

Ipk = 1500 A, TJ = TJ maximum

FM

t

= 10 ms sinusoidal wave

p

No voltage
reapplied

100 % V

RRM

reapplied

No voltage

Sinusoidal half wave,
initial T

reapplied

100 % V

RRM

reapplied

< I < π x I

F(AV)

), TJ = TJ maximum 0.94 0.88

F(AV)

< I < π x I

F(AV)

), TJ = TJ maximum 0.26 0.38

F(AV)

F(AV)

F(AV)

SD1100C..C

04 TO 20 25 TO 32

1400 (795) 1100 (550) A

55 (85) 55 (85) °C

13 000 10 500

10 930 8830

= TJ maximum

J

846 551

598 390

), TJ = TJ maximum 0.78 0.84

), TJ = TJ maximum 0.35 0.40

1.31 1.44 V

UNITS

A

2

kA

V

mΩ

s

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS

Maximum junction operating
temperature range

Maximum storage temperature range T

Maximum thermal resistance,
junction to heatsink

R

T

J

Stg

thJ-hs

DC operation single side cooled 0.076

DC operation double side cooled 0.038

Mounting force, ± 10 % 9800 (1000) N (kg)

Approximate weight 83 g

Case style See dimensions - link at the end of datasheet B-43

ΔR

CONDUCTION ANGLE

CONDUCTION

thJ-hs

SINUSOIDAL CONDUCTION RECTANGULAR CONDUCTION

SINGLE SIDE DOUBLE SIDE SINGLE SIDE DOUBLE SIDE

180° 0.007 0.007 0.005 0.005

120° 0.008 0.008 0.008 0.008

90° 0.010 0.010 0.011 0.011

60° 0.015 0.015 0.016 0.016

30° 0.026 0.026 0.026 0.026

Note

• The table above shows the increment of thermal resistance R

when devices operate at different conduction angles than DC

thJ-hs

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 14-May-08

SD1100C..C

04 TO 20 25 TO 32

UNITS

- 40 to 180 - 40 to 150

- 55 to 200

K/W

TEST CONDITIONS UNITS

= TJ maximum K/W

T

J

Document Number: 93535

°C