C&H Technology RM600HE-90S User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

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Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

SECURITY
CODE

Spec. NAME

Customer’s
Std. Spec.

Prepared by

Checked by

Approved by

DATE

MITSUBISHI ELECTRIC CORPORATION

I.Umezaki
Y.konishi
M.Yamamoto
Oct.6.2003

R
E
V

K.Kurachi

A

I.Umezaki

Nov.-18-2008

HIGH VOLTAGE DIODE MODULE SPECIFICATION

1. Type Number RM600HE-90S

2. Structure Flat base type (Insulated package, AlSiC base plate)

3. Application & Customer High power converters & Inverters

4. Outline See Fig. 1

5. Related Specifications

HIGH VOLTAGE DIODE MODULE

Fig. 1 - Outline drawing

HVM-2006-A

(HV-SETSU)

PAGE

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6. Maximum Ratings

MITSUBISHI ELECTRIC CORPORATION

Item Symbol Conditions Ratings Unit

6.1 Repetitive peak reverse voltage V

6.2 Non-repetitive peak reverse
voltage

6.3 Reverse DC voltage V

6.4 DC forward current IF T

6.5 Surge forward current I

6.6 Surge current load integral I2t

6.7 Isolation voltage V

T

RRM

T

V

RSM

Tj = 25 °C 3000 V

R(DC)

FSM

iso

= 25 °C 4500 V

j

= 25 °C 4500 V

j

= 25 °C 600 A

c

T

= 25 °C start, tw = 8.3 ms

j

Half sign wave

T

= 25 °C start, tw = 8.3 ms

j

Half sign wave

Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.

4800 A

95.6 kA

6000 V

6.8 Junction temperature Tj — −40 ~ +150 °C

6.9 Storage temperature T

— −40 ~ +125 °C

stg

6.10 Operating temperature Top — −40 ~ +125 °C

V

≤ 3000 V

6.11 Maximum reverse recovery
instantaneous power

—

R

di/dt ≤ 2000 A/µs, T

[See Fig.1, Fig.2, 12-5]

= 125 °C

j

600 kW

7. Electrical Characteristics

2

s

Item Symbol Conditions

7.1 Repetitive reverse current I

7.2 Forward voltage VFM

7.3 Reverse recovery time trr — 0.90 1.8 µs

VRM = V

RRM

RRM

(Note 1)

IF = 600 A

V

= 2250 V, IF = 600 A

R

Tj = 25 °C

Tj = 125 °C

Tj = 25 °C

Tj = 125 °C

Limits

Min. Typ. Max.

— — 5

— — 30

— 4.80 —

— 4.20 —

Unit

mA

V

di/dt = −1400 A/µs

= 125 °C

7.4 Reverse recovery charge Qrr — 600 — µC

7.5 Reverse recovery energy E

Note 1: It doesn't include the voltage drop by Internal lead resistance.

rec

HIGH VOLTAGE DIODE MODULE

T

j

HVM-2006-A

[See Fig.1,Fig.2]

— 0.62 — J/P

(HV-SETSU)

PAGE

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8. Thermal Characteristics

MITSUBISHI ELECTRIC CORPORATION

Item Symbol Conditions

8.1 Thermal resistance R

8.2 Contact thermal resistance R

Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm.

th(j-c)R

th(c-f)

Junction to case

Case to fin
Conductive grease applied

(Note 2)

Limits

Min. Typ. Max.

Unit

— — 39.0 K/kW

— 15.0 — K/kW

9. Mechanical Characteristics

Item Symbol Conditions

9.1 Mounting torque —

9.2 Mounting torque —

Main terminal screw : M8

Mounting screw : M6

9.3 Mass — — — 0.66 — kg

Limits

Min. Typ. Max.

Unit

6.67 — 13.0 N·m

2.84 — 6.0 N·m

(note 3)

10. Shipping Inspection Report Item

Static characteristics : I

Dynamic characteristics : t

[7.1], VFM [7.2]

RRM

[7.3], Qrr [7.4]

rr

Note 3: One shipping inspection report with the above item values is submitted when modules are delivered. The test

conditions are defined in bracket.

HIGH VOLTAGE DIODE MODULE

HVM-2006-A

(HV-SETSU)

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