C&H Technology RM600DG-130S User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
SECURITY
CODE
Spec. NAME
Customer’s
Std. Spec.
Prepared by K.Kurachi
Checked by
Approved by I.Umezaki
DATE 4-Feb.-2008
MITSUBISHI ELECTRIC CORPORATION
R
E
V
HIGH VOLTAGE DIODE MODULE
1. Type Number RM600DG-130S
2. Structure Flat base type (Insulated package, AlSiC base plate)
3. Application & Customer High power converters & Inverters for traction application
4. Outline See Fig. 1
5. Related Specifications
HIGH VOLTAGE DIODE MODULE
Fig. 1 - Outline drawing
HVM-2016
(HV-SETSU)
PAGE
1 / 11
6. Maximum Ratings
MITSUBISHI ELECTRIC CORPORATION
Item Symbol Conditions Ratings Unit
VGE = 0 V, Tj = −40 °C 5800
6.1 Repetitive peak reverse voltage V
RRM
VGE = 0 V, Tj = +25 °C 6300
V
= 0 V, Tj = +125 °C 6500
GE
V
VGE = 0 V, Tj = −40 °C 5800
6.2 Non-repetitive peak reverse
voltage
6.3 Reverse DC voltage V
6.4 DC forward current IF T
6.5 Surge forward current I
6.6 Surge current load integral I2t
6.7 Isolation voltage V
V
FSM
RSM
R(DC)
VGE = 0 V, Tj = +25 °C 6300
V
= 0 V, Tj = +125 °C 6500
GE
Tj = 25 °C 4500 V
= 25 °C 600 A
c
T
= 25 °C start, tw = 8.3 ms
j
Half sign wave
T
= 25 °C start, tw = 8.3 ms
j
4800 A
Half sign wave
iso
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
10200 V
V
96 kA
6.8 Junction temperature Tj — −40 ~ +150 °C
6.9 Storage temperature T
— −40 ~ +125 °C
stg
2
s
6.10 Operating temperature Top — −40 ~ +125 °C
V
≤ 4500 V
6.11 Maximum reverse recovery
instantaneous power
—
R
di/dt ≤ 3000 A/µs, T
[See Fig.1, Fig.2, 12-5]
= 125 °C
j
3600 kW
7. Electrical Characteristics
Item Symbol Conditions
7.1 Repetitive reverse current I
RRM
7.2 Forward voltage VFM
VRM = V
IF = 600 A
RRM
(Note 1)
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
7.3 Reverse recovery time trr — 1.0 — µs
V
= 3600 V, IF = 600 A
7.4 Reverse recovery current Irr — 1250 — A
7.5 Reverse recovery charge Qrr — 900 — µC
7.6 Reverse recovery energy E
rec
R
di/dt = −2000 A/µs
= 125 °C
T
j
[See Fig.1,Fig.2]
Limits
Min. Typ. Max.
— — 10
Unit
mA
— 10 90
— 4.00 —
— 3.60 —
V
— 2.0 — J/P
Note 1: It doesn't include the voltage drop by Internal lead resistance.
HIGH VOLTAGE DIODE MODULE
HVM-2016
(HV-SETSU)
PAGE
2 / 11
8. Thermal Characteristics
MITSUBISHI ELECTRIC CORPORATION
Item Symbol Conditions
8.1 Thermal resistance R
8.2 Contact thermal resistance R
Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm.
th(j-c)R
th(c-f)
Junction to case
(per 1/2 module)
Case to fin
Conductive grease applied
(per 1/2 module)
(Note 2)
Limits
Min. Typ. Max.
Unit
— — 22.0 K/kW
— 16.0 — K/kW
9. Mechanical Characteristics
Item Symbol Conditions
9.1 Mounting torque —
9.2 Mounting torque —
Main terminal screw : M8
Mounting screw : M6
9.3 Mass — — — 1.0 — kg
9.4 Comparative tracking index CTI — 600 — — —
Limits
Min. Typ. Max.
Unit
7.0 — 15.0 N·m
3.0 — 6.0 N·m
9.5 Clearance — — 26 — — mm
9.6 Creepage distance — — 56 — — mm
9.7 Internal inductance L
9.8 Internal lead resistance R
— — 44 — nH
A-K(int)
A-K(int)
Tc = 25 °C — 0.27 — mΩ
10. Shipping Inspection Report Item
Static characteristics : I
Dynamic characteristics : t
Note 3: One shipping inspection report with the above item values is submitted when modules are delivered. The test
conditions are defined in bracket.
RRM
[7.3], Qrr [7.5]
rr
(note 3)
[7.1], VFM [7.2]
HIGH VOLTAGE DIODE MODULE
HVM-2016
(HV-SETSU)
PAGE
3 / 11
Loading...