C&H Technology RM300DG-90S User Manual
6121 Baker Road,
Suite 108
Minnetonka, MN 55345
www.chtechnology.com
Phone (952) 933-6190
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
SECURITY
CODE
Spec. NAME
Customer’s
Std. Spec.
Prepared by K.Kurachi K.Kurachiv
Checked by
Approved by I.Umezaki I.Umezaki
DATE 11-May-2007
MITSUBISHI ELECTRIC CORPORATION
A
R
E
V
4-Feb.-2008
HIGH VOLTAGE DIODE MODULE
1. Type Number RM300DG-90S
2. Structure Flat base type (Insulated package, AlSiC base plate)
3. Application & Customer High power converters & Inverters for traction application
4. Outline See Fig. 1
5. Related Specifications
HIGH VOLTAGE DIODE MODULE
Fig. 1 - Outline drawing
HVM-2011-A
(HV-SETSU)
PAGE
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6. Maximum Ratings
MITSUBISHI ELECTRIC CORPORATION
Item Symbol Conditions Ratings Unit
6.1 Repetitive peak reverse voltage V
6.2 Non-repetitive peak reverse
voltage
6.3 Reverse DC voltage V
6.4 DC forward current IF T
6.5 Surge forward current I
6.6 Surge current load integral I2t
6.7 Isolation voltage V
T
RRM
T
V
RSM
Tj = 25 °C 3000 V
R(DC)
FSM
= 25 °C 4500 V
j
= 25 °C 4500 V
j
= 25 °C 300 A
c
T
= 25 °C start, tw = 8.3 ms
j
Half sign wave
T
= 25 °C start, tw = 8.3 ms
j
2400 A
Half sign wave
iso
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
10200 V
24 kA
6.8 Junction temperature Tj — −40 ~ +150 °C
6.9 Storage temperature T
— −40 ~ +125 °C
stg
6.10 Operating temperature Top — −40 ~ +125 °C
V
≤ 3200 V
6.11 Maximum reverse recovery
instantaneous power
—
R
di/dt ≤ 1100A/µs, T
[See Fig.1, Fig.2, 12-5]
= 125 °C
j
800 kW
7. Electrical Characteristics
2
s
Item Symbol Conditions
7.1 Repetitive reverse current I
RRM
7.2 Forward voltage VFM
VRM = V
IF = 300 A
RRM
(Note 1)
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Limits
Min. Typ. Max.
— — 1
— 0.5 10
— 4.80 —
— 4.15 —
Unit
mA
V
7.3 Reverse recovery time trr — 1.0 — µs
V
= 2250 V, IF = 300 A
7.4 Reverse recovery current Irr — 280 — A
7.5 Reverse recovery charge Qrr — 250 — µC
7.6 Reverse recovery energy E
Note 1: It doesn't include the voltage drop by Internal lead resistance.
rec
R
di/dt = −800 A/µs
= 125 °C
T
j
[See Fig.1,Fig.2]
— 0.33 — J/P
HIGH VOLTAGE DIODE MODULE
HVM-2011-A
(HV-SETSU)
PAGE
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8. Thermal Characteristics
MITSUBISHI ELECTRIC CORPORATION
Item Symbol Conditions
8.1 Thermal resistance R
8.2 Contact thermal resistance R
Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm.
th(j-c)R
th(c-f)
Junction to case
(per 1/2 module)
Case to fin
Conductive grease applied
(per 1/2 module)
(Note 2)
Limits
Min. Typ. Max.
Unit
— — 66.0 K/kW
— 48.0 — K/kW
9. Mechanical Characteristics
Item Symbol Conditions
9.1 Mounting torque —
9.2 Mounting torque —
Main terminal screw : M8
Mounting screw : M6
9.3 Mass — — — 1.0 — kg
9.4 Comparative tracking index CTI — 600 — — —
Limits
Min. Typ. Max.
Unit
7.0 — 15.0 N·m
3.0 — 6.0 N·m
9.5 Clearance — — 26 — — mm
9.6 Creepage distance — — 56 — — mm
9.7 Internal inductance L
9.8 Internal lead resistance R
— — 44 — nH
A-K(int)
A-K(int)
Tc = 25 °C — 0.27 — mΩ
10. Shipping Inspection Report Item
Static characteristics : I
Dynamic characteristics : t
Note 3: One shipping inspection report with the above item values is submitted when modules are delivered. The test
conditions are defined in bracket.
RRM
[7.3], Qrr [7.5]
rr
(note 3)
[7.1], VFM [7.2]
HIGH VOLTAGE DIODE MODULE
HVM-2011-A
(HV-SETSU)
PAGE
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