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SECURITY
CODE
Spec. NAME
Customer’s
Std. Spec.
Prepared by S.Iura K.Kurachi
Checked by I.Umezaki
Approved by H.Yamaguchi I.Umezaki
DATE 27-Sep.-2006
MITSUBISHI ELECTRIC CORPORATION
A
R
E
V
4-Feb.-2008
HIGH VOLTAGE DIODE MODULE
1. Type Number RM1200DG-66S
2. Structure Flat base type (Insulated package, AlSiC base plate)
3. Application & Customer High power converters & Inverters for traction application
4. Outline See Fig. 1
5. Related Specifications
HIGH VOLTAGE DIODE MODULE
Fig. 1 - Outline drawing
HVM-2010-A
(HV-SETSU)
PAGE
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6. Maximum Ratings
MITSUBISHI ELECTRIC CORPORATION
Item Symbol Conditions Ratings Unit
6.1 Repetitive peak reverse voltage V
6.2 Non-repetitive peak reverse
voltage
6.3 Reverse DC voltage V
6.4 DC forward current IF T
6.5 Surge forward current I
6.6 Surge current load integral I2t
6.7 Isolation voltage V
T
RRM
T
V
RSM
Tj = 25 °C 2200 V
R(DC)
FSM
iso
= 25 °C 3300 V
j
= 25 °C 3300 V
j
= 25 °C 1200 A
c
T
= 25 °C start, tw = 8.3 ms
j
Half sign wave
T
= 25 °C start, tw = 8.3 ms
j
Half sign wave
Charged part to the baseplate
RMS sinusoidal, 60Hz 1min.
9600 A
384 kA
10200 V
6.8 Junction temperature Tj — −40 ~ +150 °C
6.9 Storage temperature T
— −40 ~ +125 °C
stg
6.10 Operating temperature Top — −40 ~ +125 °C
V
≤ 2200 V
6.11 Maximum reverse recovery
instantaneous power
—
R
di/dt ≤ 5400 A/µs, T
[See Fig.1, Fig.2, 12-5]
= 125 °C
j
2400 kW
7. Electrical Characteristics
2
s
Item Symbol Conditions
7.1 Repetitive reverse current I
RRM
7.2 Forward voltage VFM
VRM = V
IF = 1200 A
RRM
(Note 1)
Tj = 25 °C
Tj = 125 °C
Tj = 25 °C
Tj = 125 °C
Limits
Min. Typ. Max.
— — 5
— 3 30
— 2.80 —
— 2.70 —
Unit
mA
V
7.3 Reverse recovery time trr — 1.00 — µs
V
= 1650 V, IF = 1200 A
7.4 Reverse recovery current Irr — 1600 — A
7.5 Reverse recovery charge Qrr — 800 — µC
7.6 Reverse recovery energy E
Note 1: It doesn't include the voltage drop by Internal lead resistance.
rec
HIGH VOLTAGE DIODE MODULE
R
di/dt = −4000 A/µs
= 125 °C
T
j
HVM-2010-A
[See Fig.1,Fig.2]
— 0.90 — J/P
(HV-SETSU)
PAGE
2 / 11
8. Thermal Characteristics
MITSUBISHI ELECTRIC CORPORATION
Item Symbol Conditions
8.1 Thermal resistance R
8.2 Contact thermal resistance R
Note 2: Thermal conductivity is 1W/mK with a thickness of 100µm.
th(j-c)R
th(c-f)
Junction to case
(per 1/2 module)
Case to fin
Conductive grease applied
(per 1/2 module)
(Note 2)
Limits
Min. Typ. Max.
Unit
— — 18.0 K/kW
— 16.0 — K/kW
9. Mechanical Characteristics
Item Symbol Conditions
9.1 Mounting torque —
9.2 Mounting torque —
Main terminal screw : M8
Mounting screw : M6
9.3 Mass — — — 1.0 — kg
9.4 Comparative tracking index CTI — 600 — — —
Limits
Min. Typ. Max.
Unit
7.0 — 15.0 N·m
3.0 — 6.0 N·m
9.5 Clearance — — 26 — — mm
9.6 Creepage distance — — 56 — — mm
9.7 Internal inductance L
9.8 Internal lead resistance R
— — 44 — nH
A-K(int)
A-K(int)
Tc = 25 °C — 0.27 — mΩ
10. Shipping Inspection Report Item
Static characteristics : I
Dynamic characteristics : t
Note 3: One shipping inspection report with the above item values is submitted when modules are delivered. The test
conditions are defined in bracket.
RRM
[7.3], Qrr [7.5]
rr
(note 3)
[7.1], VFM [7.2]
HIGH VOLTAGE DIODE MODULE
HVM-2010-A
(HV-SETSU)
PAGE
3 / 11
MITSUBISHI ELECTRIC CORPORATION
∫
∫
11. Test Circuit & Definition of Switching Characteristics
S1
= 500 nH
L
Rg
LOAD
L
L
K
DUT: diode
S2
= 100 nH
VCC C = 2 mF
Diode part: reverse recovery
IF
di/dt
0
0
di
Irr
trr
dt
10%V
S
C
= 200 uF
A
Fig. 1 – Switching test circuit
= –
= –
t6
if dt
0
t6
if•vr dt
t5
Qrr
V
R
10%IF
50%Irr
90%Irr
R
Erec
t5
0
t6
Fig. 2 – Definitions of reverse recovery charge & energy
HIGH VOLTAGE DIODE MODULE
HVM-2010-A
(HV-SETSU)
PAGE
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MITSUBISHI ELECTRIC CORPORATION
12. Performance curves
12-1 Forward characteristics...................................................................................................6
12-2 Reverse recovery energy characteristics ......................................................................7
12-3 Reverse recovery current characteristics......................................................................8
12-4 Transient thermal impedance characteristics...............................................................9
12-5 Reverse recovery safe operating area .........................................................................10
HIGH VOLTAGE DIODE MODULE
HVM-2010-A
(HV-SETSU)
PAGE
5 / 11
MITSUBISHI ELECTRIC CORPORATION
12-1 Forward characteristics
2400
2200
2000
1800
1600
[A]
1400
F
1200
1000
Forward current I
800
600
400
200
Tj=125°C Tj=25°C
0
0123456
Forward voltage VFM [V]
Forward voltage characteristics (typical)
HIGH VOLTAGE DIODE MODULE
HVM-2010-A
(HV-SETSU)
PAGE
6 / 11
MITSUBISHI ELECTRIC CORPORATION
12-2 Reverse recovery energy characteristics
1.6
1.4
1.2
1.0
0.8
0.6
Reverse recovery energy Erec [J/P]
Tj = 125°C, V
= 1650V
R
Ls = 100nH, Inductive load
Integration range: 10%V
~10%IF
R
0.4
0.2
0.0
0 500 1000 1500 2000 2500
Forward current IF [A]
Reverse recovery energy characteristics (typical)
HIGH VOLTAGE DIODE MODULE
HVM-2010-A
(HV-SETSU)
PAGE
7 / 11
MITSUBISHI ELECTRIC CORPORATION
A
12-3 Reverse recovery current characteristics
3000
Tj = 125°C, VR = 1650V
Ls = 100nH,
2500
]
2000
Inductive load
Reverse recovery current Irr [
1500
1000
500
0
0 500 1000 1500 2000 2500
Forward current IF [A]
Reverse recovery current characteristics (typical)
HIGH VOLTAGE DIODE MODULE
HVM-2010-A
(HV-SETSU)
PAGE
8 / 11
MITSUBISHI ELECTRIC CORPORATION
12-4 Transient thermal impedance characteristics
1.2
Rth(j-c) = 18 K/kW
1.0
0.8
0.6
0.4
Normalized transient thermal impedance
0.2
0.0
0.001 0.01 0.1 1 10
Time [sec.]
Transient thermal impedance characteristics
HIGH VOLTAGE DIODE MODULE
HVM-2010-A
(HV-SETSU)
PAGE
9 / 11
MITSUBISHI ELECTRIC CORPORATION
12-5 Reverse recovery safe operating area
3000
2500
2000
[A]
Tj = 125°C, VR ≤ 2200 V
di/dt ≤ 5400A/µs
1500
Reverse recovery current Irr
1000
500
0
0 1000 2000 3000 4000
Reverse voltage VR [V]
Reverse recovery safe operating area (RRSOA)
HIGH VOLTAGE DIODE MODULE
HVM-2010-A
(HV-SETSU)
PAGE
10 / 11
MITSUBISHI ELECTRIC CORPORATION
Rev.
No.
−
A
Summary of changes
Original
－
Signature
& date
S.Iura
27-Sep.-2006
K.Kurachi
31-Jan.-2008
HIGH VOLTAGE DIODE MODULE
HVM-2010-A
(HV-SETSU)
PAGE
11 / 11
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