C&H Technology QID4515001 User Manual

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QID4515001

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone]
www.pwrx.com

A

S NUTS

(3TYP)

EB

G (3TYP)

T (SCREWING

DEPTH)

F F

1

D

8
7

32

4

R (DEEP)

K

(3TYP)

4

5

6

1

2

L

(2TYP)

J (2TYP)

H

6
5

M

H

V (4TYP)

U (5TYP)

P

Q

C

N

Dual IGBTMOD™
HVIGBT Module

150 Amperes/4500 Volts

Description:

Powerex IGBTMOD™ Modules
are designed for use in switching
applications. Each module consists
of two IGBT Transistors in a
half-bridge configuration with each
transistor having a reverse­connected super-fast recovery
free-wheel diode. All components
and interconnects are isolated
from the heat sinking baseplate,
offering simplified system assembly
and thermal management.

8

7

Outline Drawing and Circuit Diagram

Dimensions Inches Millimeters

A 5.51 140.0

B 2.87 73.0

C 1.89 48.0

D 4.88±0.01 124.0±0.25

E 2.24±0.01 57.0±0.25

F 1.18 30.0

G 0.43 11.0

H 1.07 27.15

J 0.20 5.0

K 1.65 42.0

3

Dimensions Inches Millimeters

L 0.69±0.01 17.5±0.25

M 0.38 9.75

N 0.20 5.0

P 0.22 5.5

Q 1.44 36.5

R 0.16 4.0

S M6 Metric M6

T 0.63 Min. 16.0 Min.

U 0.11 x 0.02 2.8 x 0.5

V 0.28 Dia. 7.0 Dia.

Features:

 Low V

CE(sat)

 Creepage and Clearance
meet IEC 60077-1

 High Isolation Voltage:

10.2KVRMS

 Rugged SWSOA and RRSOA
 Compact Industry Standard

Package

Applications:

 Traction
 Medium Voltage Drives
 High Voltage Power Supplies

111/11 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

QID4515001
Dual IGBTMOD™ HVIGBT Module

150 Amperes/4500 Volts

Absolute Maximum Ratings, Tj = 25 °C unless otherwise specied

Ratings Symbol QID4515001 Units

Junction Temperature Tj -40 to 150 °C

Storage Temperature T

Collector-Emitter Voltage (VGE = 0V) V

Gate-Emitter Voltage (VCE = 0V) V

Collector Current (TC = 25°C) IC 150 Amperes

Peak Collector Current (Pulse) ICM 300* Amperes

Diode Forward Current** (TC = 25°C) IF 150 Amperes

Diode Forward Surge Current** (Pulse) IFM 300* Amperes

I2t for Diode (t = 10ms) I2t 10 kA2sec

Maximum Collector Dissipation (TC = 25°C, IGBT Part, T

≤ 150°C) PC 1440 Watts

j(max)

Mounting Torque, M6 Terminal Screws — 44 in-lb

Mounting Torque, M6 Mounting Screws — 44 in-lb

Module Weight (Typical) — 900 Grams

Isolation Voltage (Charged Part to Baseplate, AC 60Hz 1 min.) V

Partial Discharge Qpd 10 pC

(V1 = 4800 V

, V2 = 3500 V

RMS

, f = 60Hz (Acc. to IEC 1287))

RMS

Maximum Short-Circuit Pulse Width, t

(VCC ≤ 3200V, VGE = ±15V, R

≥ 60Ω, Tj = 125°C)

G(off)

-40 to 125 °C

stg

4500 Volts

CES

±20 Volts

GES

9.0 kVolts

iso

10 µs

psc

Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Collector-Cutoff Current I

Gate Leakage Current I

Gate-Emitter Threshold Voltage V

Collector-Emitter Saturation Voltage V

IC = 150A, VGE = 15V, Tj = 125°C — 4.0 — Volts

Total Gate Charge QG VCC = 2250V, IC = 150A, VGE = 15V — 1.4 — µC

Emitter-Collector Voltage** VEC IE = 150A, VGE = 0V — 4.7 5.6 Volts

* Pulse width and repetition rate should be such that device junction temperature (Tj) does not exceed T
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
*** Pulse width and repetition rate should be such that device junction temperature rise is negligible.

VCE = V

CES

VGE = V

GES

IC = 10mA, VCE = 10V 4.5 6.0 7.5 Volts

GE(th)

IC = 150A, VGE = 15V, Tj = 25°C — 3.5 3.9*** Volts

CE(sat)

, VGE = 0V — — 2.7 mA

CES

, VCE = 0V — — 0.5 µA

GES

rating.

j(max)

2 11/11 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

QID4515001
Dual IGBTMOD™ HVIGBT Module

150 Amperes/4500 Volts

Electrical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Input Capacitance C

Output Capacitance C

Reverse Transfer Capacitance C

Resistive Turn-on Delay Time t

Load Rise Time tr VGE = ±15V, — — 0.5 µs

Switching Turn-off Delay Time t

Times Fall Time tf Inductive Load — — 1.2 µs

Turn-on Switching Energy Eon Tj = 125°C, IC = 150A, VGE = ±15V, — 600 — mJ/P

Turn-off Switching Energy E

LS = 180nH , Inductive Load

Diode Reverse Recovery Time** trr VCC = 2250V, IE = 150A, — — 1.8 µs

Diode Reverse Recovery Charge** Qrr VGE = ±15V, R

Diode Reverse Recovery Energy E

Stray Inductance (C1-E2) L

Lead Resistance Terminal-Chip RCE — 0.8 — mΩ

— 18 — nF

ies

VGE = 0V, VCE = 10V — 1.33 — nF

oes

— 0.4 — nF

res

VCC = 2250V, IC = 150A, — — 1.5 µs

d(on)

RG = 60Ω, LS = 180nH — — 3.5 µs

d(off)

RG = 60Ω, VCC = 2250V, — 450 — mJ/P

off

= 60Ω, — 81* — µC

G(on)

LS = 180nH , Inductive Load — 55 — mJ/P

rec

— 60 — nH

SCE

Thermal and Mechanical Characteristics, Tj = 25 °C unless otherwise specied

Characteristics Symbol Test Conditions Min. Typ. Max. Units

Thermal Resistance, Junction to Case*** R

Thermal Resistance, Junction to Case*** R

Contact Thermal Resistance, Case to Fin R

Thermal Grease Applied, λ

Comparative Tracking Index CTI 600 — —

Clearance Distance in Air (Terminal to Base) d

Creepage Distance Along Surface d

(Terminal to Base)

Clearance Distance in Air d

(Terminal to Terminal)

Creepage Distance Along Surface d

(Terminal to Terminal)

*Pulse width and repetition rate should be such that device junction temperature rise is negligible.
**Represents characteristics of the anti-parallel, emitter-to-collector free-wheel diode (FWDi).
***TC measurement point is just under the chips.

Q Per IGBT — 0.082 0.087 °C/W

th(j-c)

D Per FWDi — 0.164 0.174 °C/W

th(j-c)

Per Module, — 0.018 — °C/W

th(c-f)

= 1W/mK

grease

35.0 — — mm

a(t-b)

64 — — mm

s(t-b)

19 — — mm

a(t-t)

54 — — mm

s(t-t)

311/11 Rev. 6

Powerex, Inc., 173 Pavilion Lane, Youngwood, Pennsylvania 15697 [phone] www.pwrx.com

QID4515001
Dual IGBTMOD™ HVIGBT Module

150 Amperes/4500 Volts

SATURATION VOLTAGE CHARACTERISTICS

6

5

, (VOLTS)

4

CE(sat)

COLLECTOR-EMITTER

VGE = 15V

= 25°C

T

j

= 125°C

T

j

(TYPICAL)

3

2

COLLECTOR-EMITTER

1

SATURATION VOLTAGE, V

0

0 50 100 200

COLLECTOR CURRENT, IC, (AMPERES)

TRANSIENT THERMAL

th(j-c)

1.2

1.0

IMPEDANCE CHARACTERISTICS

Single Pulse

= 25°C

T

C

Per Unit Base = R

(FWDi)

th(j-c)

= 0.174 K/W

0.8

0.6

• (NORMALIZED VALUE)

0.4

th

= R

th

Z

0.2

0

-3

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

10

REVERSE RECOVERY CHARACTERISTICS

-2

10

TIME, (s)

10

FREE-WHEEL DIODE

(TYPICAL)

75.0

TRANSIENT THERMAL

IMPEDANCE CHARACTERISTICS

Single Pulse

= 25°C

T

C

Per Unit Base = R

-3

HALF-BRIDGE TURN-OFF SWITCHING

VCC = 2250V
V

GE

= 60

R

G

= 180nH

L

S

= 125°C

T

j

Inductive Load Integrated
Over Range of 10%

(IGBT)

= 0.087 K/W

th(j-c)

-2

10

TIME, (s)

ENERGY CHARACTERISTICS

(TYPICAL)

-1

10

= ±15V

0

10

6

5

, (VOLTS)

EC

4

3

2

1

EMITTER-COLLECTOR VOLTAGE, V

250150

0

1250

, (mJ/P)

1000

on

750

FREE-WHEEL DIODE

FORWARD CHARACTERISTICS

0 50 100 200

HALF-BRIDGE TURN-ON SWITCHING

VCC = 2250V
V

GE

= 60

R

G

= 180nH

L

S

= 125°C

T

j

Inductive Load Integrated
Over Range of 10%

(TYPICAL)

Tj = 25°C

= 125°C

T

j

EMITTER CURRENT, IE, (AMPERES)

ENERGY CHARACTERISTICS

(TYPICAL)

= ±15V

th(j-c)

1.2

1.0

0.8

0.6

• (NORMALIZED VALUE)

0.4

th

= R

th

Z

0.2

0

NORMALIZED TRANSIENT THERMAL IMPEDANCE, Z

250150

10

750

625

, (mJ/P)

off

500

375

500

250

250

TURN-OFF SWITCHING ENERGY, E

-1

0

10

0

0 50 100 150 200

COLLECTOR CURRENT, IC, (AMPERES)

TURN-OFF SWITCHING

SAFE OPERATING AREA (RBSOA)

(TYPICAL)

250

125

TURN-OFF SWITCHING ENERGY, E

0

0 50 100 150 200

COLLECTOR CURRENT, IC, (AMPERES)

DIODE REVERSE RECOVERY

SAFE OPERATING AREA

(TYPICAL)

375

62.5

, (mJ/P)

rec

50.0

37.5

25.0

12.5

REVERSE RECOVERY ENERGY, E

0

0 50 100 150 200

EMITTER CURRENT, I

VCC = 2250V
V

= ±15V

GE

= 60

R

G

= 180nH

L

S

= 25°C

T

j

Inductive Load Integrated
Over Range of 10%
IGBT Drive Conditions

, (AMPERES)

E

200

, (VOLTS)

C

150

100

VCC = 3000V
V

= ±15V

GE

= 60

R

50

COLLECTOR CURRENT, I

G

= 100nH

L

S

= 125°C

T

j

0

0 1000 2000 3000 4000 5000

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

312

, (AMPERES)

rr

250

187

125

62

REVERSE RECOVERY CURRENT, I

0

0 1000 2000 3000 4000

COLLECTOR-EMITTER VOLTAGE, VCE, (VOLTS)

4 11/11 Rev. 6