C&H Technology P100 User Manual

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Passivated Assembled Circuit Elements, 25 A

PACE-PAK (D-19)

PRODUCT SUMMARY

I

O

25 A

P100 Series

Vishay High Power Products

FEATURES

• Glass passivated junctions for greater reliability

• Electrically isolated base plate

• Available up to 1200 V

• High dynamic characteristics

• Wide choice of circuit configurations

• Simplified mechanical design and assembly

• UL E78996 approved

• Compliant to RoHS directive 2002/95/EC

DESCRIPTION

The P100 series of integrated power circuits consists of
power thyristors and power diodes configured in a single
package. With its isolating base plate, mechanical designs
are greatly simplified giving advantages of cost reduction
and reduced size.

Applications include power supplies, control circuits and
battery chargers.

RRM/VDRM

MAJOR RATINGS AND CHARACTERISTICS

SYMBOL CHARACTERISTICS VALUES UNITS

I

O

I

,

TSM

I

FSM

2

I

t

2

I

√t 6365 A2√s

V

RRM

V

ISOL

T

J

T

Stg

85 °C 25 A

50 Hz 357

60 Hz 375

50 Hz 637

60 Hz 580

Range 400 to 1200 V

2500 V

- 40 to 125 °C

ELECTRICAL SPECIFICATIONS

VOLTAGE RATINGS

V

RRM/VDRM

TYPE
NUMBER

P101, P121, P131 400 500

P102, P122, P132 600 700

P103, P123, P133 800 900

P104, P124, P134 1000 1100

P105, P125, P135 1200 1300

REPETITIVE PEAK REVERSE AND

PEAK OFF-STATE VOLTAGE

, MAXIMUM

V

V

, MAXIMUM

RSM

NON-REPETITIVE PEAK

REVERSE VOLTAGE

V

I

RRM

AT T

MAXIMUM

MAXIMUM

J

A

A2s

mA

10

Document Number: 93754 For technical questions, contact: [e-mail]
Revision: 04-Nov-09 1

www.vishay.com

P100 Series

Vishay High Power Products

Passivated Assembled

Circuit Elements, 25 A

ON-STATE CONDUCTION

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum DC output current
at case temperature

Maximum peak, one-cycle
non-repetitive on-state or
forward current

Maximum I

Maximum I

Maximum value of
threshold voltage

2

t for fusing I2t

2

√t for fusing I2√t

V

Maximum level value of on-state
slope resistance

Maximum on-state voltage drop V

Maximum forward voltage drop V

Maximum non-repetitive rate of
rise of turned-on current

Maximum holding current I

Maximum latching current I

I

O

I

TSM

I

FSM

T(TO)

r

t1

TM

FM

dI/dt

H

L

Full bridge

t = 10 ms

,

t = 8.3 ms 375

t = 10 ms

t = 8.3 ms 315

t = 10 ms

t = 8.3 ms 580

t = 10 ms

t = 8.3 ms 410

No voltage
reapplied

100 % V

RRM

reapplied

No voltage
reapplied

100 % V

RRM

reapplied

Sinusoidal half wave,
initial T

J

= TJ maximum

t = 0.1 ms to 10 ms, no voltage reapplied

2

I

t for time tx = I2√t · √tx

TJ = 125 °C 0.82 V

TJ = 125 °C, average power = V

ITM = π x I

IFM = π x I

TJ = 125 °C from 0.67 V
ITM = π x I

T(AV)

F(AV)

, Ig = 500 mA, tr < 0.5 μs, tp > 6 μs

T(AV)

DRM

x I

T(TO)

T(AV)

+ rt + (I

T(RMS)

)

TJ = 25 °C 1.35 V

TJ = 25 °C anode supply = 6 V, resistive load, gate open 130

TJ = 25 °C anode supply = 6 V, resistive load 250

25 A

85 °C

357

300

637

450

6365 A

2

12 mΩ

200 A/μs

A

A

2

mA

2

s

√s

BLOCKING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum critical rate of rise of
off-state voltage

Maximum peak reverse
and off-state leakage current
at V

, V

RRM

DRM

Maximum peak reverse
leakage current

RMS isolation voltage V

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 04-Nov-09

dV/dt T

I

,

RRM

I

DRM

I

RRM

ISOL

= 125 °C, exponential to 0.67 V

J

gate open 200 V/μs

DRM

TJ = 125 °C, gate open circuit 10 mA

TJ = 25 °C 100 μA

50 Hz, circuit to base, all terminals shorted,

= 25 °C, t = 1 s

T

J

2500 V

Document Number: 93754

P100 Series

Passivated Assembled

Vishay High Power Products

Circuit Elements, 25 A

TRIGGERING

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum peak gate power P

Maximum average gate power P

Maximum peak gate current I

Maximum peak negative gate voltage -V

GM

G(AV)

GM

GM

TJ = - 40 °C

Maximum gate voltage required to trigger V

Maximum gate current required to trigger I

Maximum gate voltage that will not trigger V

Maximum gate current that will not trigger I

GT

GT

GD

GD

= 25 °C 2

J

T

= 125 °C 1

J

TJ = - 40 °C 90

= 25 °C 60

J

T

= 125 °C 35

J

TJ = 125 °C, rated V

Anode supply =
6 V resistive load

applied

DRM

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction operating
and storage temperature range

Maximum thermal resistance,
junction to case per junction

Maximum thermal resistance,
case to heatsink

Mounting torque, base to heatsink

(1)

Approximate weight

Note

(1)

A mounting compund is recommended and the torque should be checked after a period of 3 hours to allow for the spread of the compound

T

, T

J

Stg

R

R

thJC

thCS

DC operation 2.24

Mounting surface, smooth and greased 0.10

8

2

W

2A

10 V

3

mAT

0.2 V

2mA

- 40 to 125 °C

K/W

4Nm

58 g

2.0 oz.

VT

CIRCUIT TYPE AND CODING

(1)

CIRCUIT “0” CIRCUIT “2” CIRCUIT “3”

Terminal positions

Schematic diagram

AC1 G1-

AC2 G2+

G1

AC1

AC2

(-) (+)

G2

Single phase hybrid bridge

common cathode

AC1 G1-

AC2 G2+

G1

AC2

AC1

(-) (+)

G2

Single phase hybrid bridge doubler Single phase all SCR bridge

AC2 G2-

G1 G4

AC1 G3

AC1

AC2

(-) (+)

+

G1G3

G2G4

Basic series P10. P12. P13.

With voltage suppression P10.K P12.K P13.K

With freewheeling diode P10.W - -

With both voltage suppression and
freewheeling diode

P10.KW - -

Note

(1)

To complete code refer to Voltage Ratings table, i.e.: For 600 V P10.W complete code is P102W

Document Number: 93754 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Nov-09 3

P100 Series

Vishay High Power Products

60

~

50

40

30

20

10

Maximum Total Power Loss (W)

0

0

93754_01a

15

10

5101520

180°
120°

90°
60°
30°

+

-

180°

(sine)

Total Output Current (A)

Fig. 1 - Current Ratings Nomogram (1 Module Per Heatsink)

RMS limit

Passivated Assembled

Circuit Elements, 25 A

TJ = 125 °C

25

60

50

40

30

5 K/W

20

7 K/W

10

Maximum Total Power Loss (W)

0

0

93754_01b

R

thSA

= 15 K/W - ΔR

2 K/W

3 K/W

10 K/W

25 7550 100 125

Maximum Allowable

Ambient Temperature (°C)

130

Fully turned-on

120

110

100

180°

(Rect.)

5

Power Loss (W)

Maximum Average On-State

0

93754_02

20

15

10

Power Loss (W)

5

Maximum Average On-State

0

93754_03

Ø

Conduction angle

TJ = 125 °C

Per junction

10 1505

Average On-State Current (A)

Fig. 2 - On-State Power Loss Characteristics

DC
180°
120°

90°

60°

30°

RMS limit

Ø

Conduction period

TJ = 125 °C

Per junction

Average On-State Current (A)

Fig. 3 - On-State Power Loss Characteristics

90

Temperature (°C)

80

Maximum Allowable Case

70

0

93754_04

Per module

10 2051525

Total Output Current (A)

180°

(Sine)

30

Fig. 4 - Current Ratings Characteristics

1000

TJ = 25 °C

100

10

Instantaneous On-State Current (A)

20010155

93754_05

1

0123456

Instantaneous On-State Voltage (V)

TJ = 125 °C

Per junction

Fig. 5 - On-State Voltage Drop Characteristics

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93754

4 Revision: 04-Nov-09

P100 Series

350

300

250

200

On-State Current (A)

Peak Half Sine Wave

150

93754_06

Fig. 6 - Maximum Non-Repetitive Surge Current

At any rated load condition and with

rated V

Per junction

applied following surge.

RRM

Initial T
at 60 Hz 0.0083 s
at 50 Hz 0.0100 s

10 1001

Number of Equal Amplitude Half

Cycle Current Pulses (N)

10

Steady state value

= 2.24 K/W

R

thJC

(DC operation)

1

Passivated Assembled

Circuit Elements, 25 A

= 125 °C

J

400

350

300

250

200

On-State Current (A)

Peak Half Sine Wave

150

100

93754_07

Fig. 7 - Maximum Non-Repetitive Surge Current

Vishay High Power Products

Maximum non-repetitive surge current

versus pulse train duration. Control of

conduction may not be maintained.

No voltage reapplied

Rated V

Per junction

0.1 10.01

Pulse Train Duration (s)

Initial T

RRM

= 125 °C

J

reapplied

0.1

- Transient Thermal
Impedance (K/W)

thJC

Z

0.01

0.0001 0.001 0.01 0.1 101

93754_08

100

10

1

Instantaneous Gate Voltage (V)

0.1

0.001

93754_09

Rectangular gate pulse
(a) Recommended load line for
rated dI/dt: 10 V, 20 Ω, t
(b) Recommended load line for
rated dI/dt: 10 V, 65 Ω, t

V

GD

I

GD

r

r

0.01 0.1 1 10 100

Square Wave Pulse Duration (s)

Fig. 8 - Thermal Impedance Z

≤ 1 μs

≤ 1 μs

T

J

= 125 °C

(b)

T

J

= 25 °C

(a)

T

J

= 40 °C

Instantaneous Gate Current (A)

Characteristics

thJC

Fig. 9 - Gate Characteristics

Per junction

(1) PGM = 10 W, tp = 5 ms

= 20 W, tp = 25 ms

(2) P

GM

= 50 W, tp = 1 ms

(3) P

GM

= 100 W, tp = 500 μs

(4) P

GM

(1) (2) (3) (4)

Frequency limited by P

G(AV)

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95335

Document Number: 93754 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Nov-09 5

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
otherwise expressly indicated. Customers using or selling Vishay products not expressly indicated for use in such
applications do so entirely at their own risk and agree to fully indemnify Vishay for any damages arising or resulting
from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
products designed for such applications.

Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1