C&H Technology MBR20T100CT User Manual
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Suite 108
Minnetonka, MN 55345
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Schottky Generation 5.0, 2 x 10 A
Anode
TO-220AB
PRODUCT SUMMARY
I
F(AV)
V
R
V
at 10 A at 125 °C 0.68 V
F
High Performance
Base
common
2
cathode
Anode
2
Common
13
cathode
2 x 10 A
100 V
MBR20T100CT
Vishay High Power Products
FEATURES
• 175 °C high performance Schottky diode
• Very low forward voltage drop
• Extremely low reverse leakage
• Optimized V
• Increased ruggedness for reverse avalanche capability
• RBSOA available
• Negligible switching losses
• Submicron trench technology
• Full lead (Pb)-free and RoHS compliant devices
• Designed and qualified for industrial level
APPLICATIONS
• High efficiency SMPS
• Automotive
• High frequency switching
• Output rectification
• Reverse battery protection
• Freewheeling
• Dc-to-dc systems
• Increased power density systems
vs. IR trade off for high efficiency
F
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
V
V
T
RRM
F
J
10 Apk, TJ = 125 °C (typical, per leg) 0.62
Range - 55 to 175 °C
100
V
VOLTAGE RATINGS
PARAMETER SYMBOL TEST CONDITIONS MBR20T100CT UNITS
Maximum DC reverse voltage V
TJ = 25 °C 100 V
R
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average
forward current
Maximum peak one cycle
non-repetitive surge current per leg
Non-repetitive avalanche energy per leg E
Repetitive avalanche current per leg I
per leg
per device 20
I
F(AV)
I
FSM
AR
50 % duty cycle at TC = 159 °C, rectangular waveform
5 µs sine or 3 µs rect. pulse
10 ms sine or 6 ms rect. pulse 200
TJ = 25 °C, IAS = 3 A, L = 12 mH 54 mJ
AS
Limited by frequency of operation and time pulse duration so
that T
< TJ max. IAS at TJ max. as a function of time pulse
J
See fig. 8
Following any rated load
condition and with rated
V
applied
RRM
T
10
850
I
AS
max.
J
at
A
A
A
Document Number: 94534 For technical questions, contact: diodes-tech@vishay.com
Revision: 15-Oct-08 1
www.vishay.com
MBR20T100CT
Vishay High Power Products
High Performance
Schottky Generation 5.0,
2 x 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS TYP. MAX. UNITS
10 A
20 A - 0.88
RM
FM
(1)
10 A
20 A - 0.80
TJ = 25 °C
(1)
T
J
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 400 - pF
T
Measured lead to lead 5 mm from package body 8.0 - nH
S
Forward voltage drop per leg V
Reverse leakage current per leg I
Junction capacitance per leg C
Series inductance per leg L
Maximum voltage rate of change dV/dt Rated V
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
= 125 °C - 4 mA
R
T
= 25 °C
J
= 125 °C
T
J
V
= Rated VR
R
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction and
storage temperature range
Maximum thermal resistance,
junction to case per leg
Maximum thermal resistance,
junction to case per device
Typical thermal resistance,
case to heatsink
Approximate weight
Mounting torque
Marking device Case style TO-220AB MBR20T100CT
minimum 6 (5)
maximum 12 (10)
, T
T
J
Stg
R
DC operation
thJC
R
thCS
Mounting surface, smooth and greased 0.5
-0.79
-0.68
- 100 µA
- 10 000 V/µs
- 55 to 175 °C
2
1
2g
0.07 oz.
°C/W
kgf · cm
(lbf · in)
V
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
2 Revision: 15-Oct-08
Document Number: 94534
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