C&H Technology MBR10 User Manual
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TO-220AC
Schottky Rectifier, 10 A
FEATURES
• 150 °C TJ operation
• TO-220 package
• High frequency operation
• Low forward voltage drop
• High purity, high temperature epoxy encapsulation for
enhanced mechanical strength and moisture resistance
• Guard ring for enhanced ruggedness and long term
reliability
• Designed and qualified for industrial level
cathode
1
Cathode
Base
2
3
Anode
MBR10.. Series
Vishay High Power Products
PRODUCT SUMMARY
I
F(AV)
V
R
I
RM
10 A
35/45 V
15 mA at 125 °C
DESCRIPTION
This Schottky rectifier has been optimized for low reverse
leakage at high temperature. The proprietary barrier
technology allows for reliable operation up to 150 °C junction
temperature. Typical applications are in switching power
supplies, converters, freewheeling diodes, and reverse
battery protection.
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS VALUES UNITS
I
F(AV)
I
FRM
V
RRM
I
FSM
V
F
T
J
Rectangular waveform 10
TC = 135 °C 20
35/45 V
tp = 5 µs sine 1060 A
10 Apk, TJ = 125 °C 0.57 V
Range - 65 to 150 °C
A
VOLTAGE RATINGS
PARAMETER SYMBOL MBR1035 MBR1045 UNITS
Maximum DC reverse voltage V
Maximum working peak reverse voltage V
R
RWM
35 45 V
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum average forward current I
Peak repetitive forward current I
Non-repetitive peak surge current I
Non-repetitive avalanche energy E
Repetitive avalanche current I
Document Number: 93437 For technical questions, contact: diodes-tech@vishay.com
Revision: 22-Aug-08 1
F(AV)
FRM
FSM
AR
TC = 135 °C, rated V
Rated VR, square wave, 20 kHz, TC = 135 °C 20
5 µs sine or 3 µs rect. pulse
Surge applied at rated load conditions halfwave,
single phase, 60 Hz
TJ = 25 °C, IAS = 2 A, L = 4 mH 8 mJ
AS
Current decaying linearly to zero in 1 µs
Frequency limited by T
R
Following any rated load condition
and with rated V
maximum VA = 1.5 x VR typical
J
RRM
applied
10
1060
150
2A
www.vishay.com
A
A
MBR10.. Series
Vishay High Power Products
Schottky Rectifier, 10 A
ELECTRICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
20 A TJ = 25 °C 0.84
Maximum forward voltage drop V
FM
(1)
20 A 0.72
Maximum instantaneous reverse current I
Threshold voltage V
Forward slope resistance r
Maximum junction capacitance C
Typical series inductance L
RM
F(TO)
T
= 125 °C 15
J
TJ = TJ maximum
t
VR = 5 VDC (test signal range 100 kHz to 1 MHz) 25 °C 600 pF
T
Measured from top of terminal to mounting plane 8.0 nH
S
TJ = 25 °C
(1)
Maximum voltage rate of change dV/dt Rated V
T
= 125 °C
J
Rated DC voltage
R
0.57
0.1
0.354 V
17.6 mΩ
10 000 V/µs
Note
(1)
Pulse width < 300 µs, duty cycle < 2 %
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Maximum junction temperature range T
Maximum storage temperature range T
Maximum thermal resistance,
junction to case
Typical thermal resistance,
case to heatsink
J
Stg
DC operation 2.0
R
thJC
R
thCS
Mounting surface, smooth and greased 0.50
Approximate weight
Mounting torque
minimum 6 (5)
maximum 12 (10)
Marking device Case style TO-220AC
- 65 to 150
- 65 to 175
2g
0.07 oz.
kgf · cm
(lbf · in)
MBR1035
MBR1045
V10 A
mA
°C
°C/W
www.vishay.com For technical questions, contact: diodes-tech@vishay.com
Document Number: 93437
2 Revision: 22-Aug-08
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