C&H Technology HFA90NH40PbF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

HFA90NH40PbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 210 A

HALF-PAK (D-67)

PRODUCT SUMMARY

IF (maximum) 210 A

V

R

at T

I

F(DC)

C

Lug terminal

anode

Base

cathode

400 V

106 A at 100 °C

HEXFRED

FEATURES

• Very low Qrr and t

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.

®

rr

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Non-repetitive avalanche energy E

Maximum power dissipation P

Operating junction and storage
temperature range

T

J

FSM

, T

F

AS

R

TC = 25 °C 210

= 100 °C 106

C

Limited by junction temperature 600

L = 100 µH, duty cycle limited by maximum T

D

TC = 25 °C 329

T

= 100 °C 132

C

Stg

J

400 V

AT

1.4 mJ

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

V

BR

FM

I

RM

T

S

IR = 100 µA 400 - -

IF = 90 A

I

= 180 A - 1.2 1.67

F

= 90 A, TJ = 125 °C - 0.96 1.23

I

F

TJ = 125 °C, VR = 400 V See fig. 2 - 0.6 2 mA

VR = 200 V See fig. 3 - 180 260 pF

From top of terminal hole to mounting plane - 7.0 - nH

See fig. 1

- 1.06 1.45

V

Document Number: 94044 For technical questions, contact: [e-mail]
Revision: 01-Aug-08 1

www.vishay.com

HFA90NH40PbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 210 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of recovery current
See fig. 8

dI

t

rr

I

RRM

Q

(rec)M

TJ = 25 °C

T

= 125 °C - 158 240

J

TJ = 25 °C - 9 17

= 90 A

I

T

= 125 °C - 15 30

J

TJ = 25 °C - 420 1100

rr

T

= 125 °C - 1200 3200

J

= 25 °C - 370 -

T

J

/dt

T

= 125 °C - 270 -

J

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Maximum junction and storage
temperature range

Maximum thermal resistance,
junction to case

Typical thermal resistance,
case to heatsink

Approximate weight

Mounting torque

Terminal torque

minimum Non-lubricated threads 3 (26.5)

maximum 4 (35.4)

minimum 3.4 (30)

maximum 5 (44.2)

Case style HALF-PAK module

T

, T

J

Stg

DC operation

R

thJC

R

thCS

See fig. 4

Mounting surface, flat, smooth and greased 0.05

- 90 140

- 55 to 150 °C

0.38

30 g

1.06 oz.

(lbf ⋅ in)

ns

A

nC

A/µs

°C/W

N ⋅ m

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94044

2 Revision: 01-Aug-08

T

p(p)

A

HFA90NH40PbF

1000

(A)

F

100

HEXFRED

®

Ultrafast Soft Recovery Diode, 210 A

10000

1000

(μA)

R

0.01

Reverse Current - I

0.001

0.0001

Vishay High Power Products

150°C

100

10

1

0.1

100 200 300 400

Reverse Voltage - VR (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

10000

125°C

25°C

(pF)

10

Instantaneous Forward Current - I

1

0.0 0.5 1.0 1.5 2.0 2.5 3.0

Forward Voltage Drop - VFM(V)

Tj = 150°C

Tj = 125°C

Tj = 25°C

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current

160

140

120

100

80

60

40

20

Max. Allowable Case Temperature (°C)

0

0 50 100 150 200 250

DC Forward Current - I

T

1000

Junction Capacitance - C

100

1 10 100 1000

Fig. 3 - Typical Junction Capacitance vs.

DC

(A)

F(AV)

T = 25°C

J

Reverse Voltage - VR (V)

Reverse Voltage

Fig. 4 - Maximum Allowable Case Temperature vs. DC Forward Current

Document Number: 94044 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Aug-08 3

HFA90NH40PbF

Vishay High Power Products

240

200

160

(ns)

rr

t

120

80

40

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt

200A, 125°C

90A, 125°C

40A, 125°C

200A, 25°C

90A, 25°C

40A, 25°C

100 1000

dIF/ dt (A/μs)

HEXFRED

®

Ultrafast Soft Recovery Diode, 210 A

4500

4000

3500

3000

2500

(nC)

rr

2000

Q

1500

1000

500

0

100 1000

Fig. 7 - Typical Stored Charge vs. dI

200A, 125°C

90A, 125°C

40A, 125°C

200A, 25°C

90A, 25°C

dIF/ dt (A/μs)

40A, 25°C

/dt

F

100

200A, 125°C

90A, 125°C

40A, 125°C

(A)

10

RRM

I

1

100 1000

dIF/ dt (A/μs)

Fig. 6- Typical Recovery Current vs. dI

200A, 25°C
90A, 25°C

40A, 25°C

10000

s)

1000

40A, 25°C

dI (rec)M/ dt (A/μ

/dt

F

90A, 25°C

200A, 125°C

90A, 125°C

200A, 25°C

100

100 1000

dIF/ dt (A/μs)

Fig. 8 - Typical dI

40A, 125°C

(rec)M

/dt vs. dIF/dt

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94044

4 Revision: 01-Aug-08

HFA90NH40PbF

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery Diode, 210 A

1

)

thJC

Thermal Response (Z

0.001

D = 0.50

0.33

0.25

0.1

0.17

0.08

0.01

1E-005 0.0001 0.001 0.01 0.1 1 10

SINGLE PULSE
( THERMAL RESPONSE )

t1, Rectangular Pulse Duration (sec)

Fig. 9 - Maximum Thermal Impedance Z

V

= 200 V

R

Characteristics (Per Leg)

thJC

0.01 Ω

L = 70 µH

D.U.T.

dIF/dt

adjust

G

D

IRFP250

S

Fig. 10 - Reverse Recovery Parameter Test Circuit

(3)

t

I

F

rr

t

a

t

b

0

(4)

Q

rr

0.5 I

RRM

(rec)M

Q

(5)

/dt

trr x I

RRM

=

rr

2

RRM

dI

/dt - peak rate of change of

portion of t

b

rr

rr

dIF/dt

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

- peak reverse recovery current

(2) I

RRM

(3) t

- reverse recovery time measured

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

(2)

I

RRM

(4) Q
and I

(5) dI
current during t

0.75 I

- area under curve defined by t

rr

RRM

(rec)M

Fig. 11 - Reverse Recovery Waveform and Definitions

Document Number: 94044 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Aug-08 5

HFA90NH40PbF

Vishay High Power Products

L = 100 µH

D.U.T.

= 25 Ω

R

g

Current
monitor

Fig. 12 - Avalanche Test Circuit and Waveforms

ORDERING INFORMATION TABLE

Device code

HFA 90 N H 40 PbF

HEXFRED

®

Ultrafast Soft Recovery Diode, 210 A

I

L(PK)

High-speed

switch

Freewheel

diode

V

d

= 50 V

+

V

(AVAL)

V

R(RATED)

51324

6

Decay

time

1 - HEXFRED® family

2

- Average current rating

3

- N = Not isolated

4

- H = HALF-PAK

5

- Voltage rating (400 V)

6

- Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95020

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 01-Aug-08

Document Number: 94044

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1