C&H Technology HFA80FA120P User Manual

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HFA80FA120P

Vishay High Power Products

SOT-227

PRODUCT SUMMARY

VR 1200 V

V

(typical) 2.6 V

F

t

(typical) 25 ns

rr

at T

I

F(DC)

C

HEXFRED

®

Ultrafast Soft Recovery Diode, 80 A

FEATURES

1

2

40 A at 60 °C

4

3

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• UL pending

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

The dual diode series configuration (HFA80FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such as
HV power supplies, electronic welders, motor control and
inverters.

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

RMS isolation voltage V

Operating junction and storage
temperature range

T

J

F

FSM

FRM

ISOL

, T

R

TC = 60 °C 40

TJ = 25 °C 400

Rated V

D

TC = 25 °C 178

T

C

Any terminal to case, t = 1 min 2500 V

Stg

square wave, 20 kHz, TC = 60 °C 72

R,

= 100 °C 71

1200 V

ASingle pulse forward current I

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

V

BR

FM

RM

IR = 100 µA 1200 - -

IF = 25 A

I

= 40 A - 2.9 3.3

F

I

= 80 A, TJ = 125 °C - 3.4 -

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 0.5 2 mA

J

VR = 200 V See fig. 3 - 43 - pF

T

See fig. 1

See fig. 2

-2.63.0

-2.0-µA

V

Document Number: 94075 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 1

www.vishay.com

HFA80FA120P

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 80 A

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 25 -

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 25 °C

J

T

= 125 °C - 110 -

J

TJ = 25 °C - 5.9 -

T

= 125 °C - 10.8 -

J

TJ = 25 °C - 160 -

rr

T

= 125 °C - 630 -

J

= 40 A

I

F

/dt = - 200 A/µs

dI

F

= 200 V

V

R

-52-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

Weight -30- g

Mounting torque -1.3-Nm

R

thJC

thCS

Flat, greased and surface - 0.05 -

--0.7

nsT

A

nC

°C/WJunction to case, both legs conducting - - 0.35

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 04-Aug-08

Document Number: 94075