C&H Technology HFA80FA120P User Manual

6121 Baker Road, Suite 108 Minnetonka, MN 55345
www.chtechnology.com
Fax (952) 933-6223
1-800-274-4284
Thank you for downloading this document from C&H Technology, Inc.
Please contact the C&H Technology team for the following questions -
Technical
Application
Assembly
Availability
Pricing
Phone – 1-800-274-4284
E-Mail – sales@chtechnology.com
www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com
HFA80FA120P
Vishay High Power Products
SOT-227
PRODUCT SUMMARY
VR 1200 V
V
(typical) 2.6 V
F
t
(typical) 25 ns
rr
at T
I
F(DC)
C
HEXFRED
®
Ultrafast Soft Recovery Diode, 80 A
FEATURES
1
2
40 A at 60 °C
4
3
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL pending
• Totally lead (Pb)-free
• Designed and qualified for industrial level
DESCRIPTION/APPLICATIONS
The dual diode series configuration (HFA80FA120P) is used for output rectification or freewheeling/clamping operation and high voltage application. The semiconductor in the SOT-227 package is isolated from the copper base plate, allowing for common heatsinks and compact assemblies to be built. These modules are intended for general applications such as HV power supplies, electronic welders, motor control and inverters.
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Maximum repetitive forward current I
Maximum power dissipation P
RMS isolation voltage V
Operating junction and storage temperature range
T
J
F
FSM
FRM
ISOL
, T
R
TC = 60 °C 40
TJ = 25 °C 400
Rated V
D
TC = 25 °C 178
T
C
Any terminal to case, t = 1 min 2500 V
Stg
square wave, 20 kHz, TC = 60 °C 72
R,
= 100 °C 71
1200 V
ASingle pulse forward current I
W
- 55 to + 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage
Forward voltage V
Reverse leakage current I
Junction capacitance C
V
BR
FM
RM
IR = 100 µA 1200 - -
IF = 25 A
I
= 40 A - 2.9 3.3
F
I
= 80 A, TJ = 125 °C - 3.4 -
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 0.5 2 mA
J
VR = 200 V See fig. 3 - 43 - pF
T
See fig. 1
See fig. 2
-2.63.0
-2.0-µA
V
Document Number: 94075 For technical questions, contact: ind-modules@vishay.com Revision: 04-Aug-08 1
www.vishay.com
HFA80FA120P
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery
Diode, 80 A
DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 25 -
Reverse recovery time t
Peak recovery current I
Reverse recovery charge Q
rr
RRM
= 25 °C
J
T
= 125 °C - 110 -
J
TJ = 25 °C - 5.9 -
T
= 125 °C - 10.8 -
J
TJ = 25 °C - 160 -
rr
T
= 125 °C - 630 -
J
= 40 A
I
F
/dt = - 200 A/µs
dI
F
= 200 V
V
R
-52-
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Case to heatsink R
Weight -30- g
Mounting torque -1.3-Nm
R
thJC
thCS
Flat, greased and surface - 0.05 -
--0.7
nsT
A
nC
°C/WJunction to case, both legs conducting - - 0.35
www.vishay.com For technical questions, contact: ind-modules@vishay.com 2 Revision: 04-Aug-08
Document Number: 94075
HFA80FA120P
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery
Diode, 80 A
100
10
- Instantaneous
F
I
Forward Current (A)
1
1.0 1.5 2.0 2.5 3.0 3.5
TJ = 150 °C T
= 125 °C
J
T
= 25 °C
J
4.0
VF - Forward Voltage Drop (V)
Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.
1000
10
TJ = 150 °C
1
0.1
0.01
- Reverse Current (µA)
0.001
R
I
0.0001
200 400 600 800 1000 12000
V
R
T
= 125 °C
J
= 25 °C
T
J
- Reverse Voltage (V)
Reverse Voltage
TJ = 25 °C
100
- Junction Capacitance (pF)
T
C
10
1
10 100 1000
V
- Reverse Voltage (V)
R
10 000
Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage
1
0.1
0.01
0.001
- Thermal Impedance (°C/W)
thJC
Z
0.0001
0.00001 0.0001 0.001 0.01 0.1 1
Single pulse
(thermal resistance)
D = 0.50 D = 0.20 D = 0.10 D = 0.05 D = 0.02 D = 0.01
Notes:
1. Duty factor D = t
2. Peak TJ = PDM x Z
t1 - Rectangular Pulse Duration (s)
P
DM
t
1
t
2
1/t2
.
+ T
thJC
C
.
10
Fig. 4 - Maximum Thermal Impedance Z
Characteristics
thJC
Document Number: 94075 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 04-Aug-08 3
HFA80FA120P
C
C
Vishay High Power Products
160
)
140
120
100
80
ase Temperature (°
60
40
20
Allowable
0
0
Square wave (D = 0.50)
See note (1)
2010 30 40
I
- Average Forward Current (A)
F(AV)
Fig. 5 - Maximum Allowable Case Temperature vs.
Average Forward Current
200
180
160
140
120
100
80
60
40
Average Power Loss (W)
20
0
0
I
F(AV)
2010 30 40
- Average Forward Current (A)
Fig. 6 - Forward Power Loss Characteristics
DC
RMS limit
HEXFRED
Ultrafast Soft Recovery
Diode, 80 A
706050
DC
D = 0.01 D = 0.02 D = 0.05 D = 0.10 D = 0.20 D = 0.50
50 60
®
140
120
100
80
(ns)
rr
t
60
40
20
100
Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt
1800
1600
(nC)
rr
Q
1400
1200
1000
800
600
400
200
IF = 40 A, TJ = 125 °C I
F
IF = 40 A, TJ = 25 °C
= 20 A, TJ = 25 °C
I
F
0
100
= 20 A, TJ = 125 °C
Fig. 8 - Typical Stored Charge vs. dI
IF = 40 A, TJ = 125 °C
= 20 A, TJ = 125 °C
I
F
IF = 40 A, TJ = 25 °C
= 20 A, TJ = 25 °C
I
F
dIF/dt (A/µs)
dIF/dt (A/µs)
1000
1000
/dt
F
Note
(1)
Formula used: TC = TJ - (Pd + Pd Pd = Forward power loss = I Pd
= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V
REV
F(AV)
) x R
REV
x VFM at (I
;
thJC
/D) (see fig. 6);
F(AV)
R
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94075
4 Revision: 04-Aug-08
HFA80FA120P
HEXFRED
Ultrafast Soft Recovery
Diode, 80 A
L = 70 µH
dIF/dt
adjust
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
(2) I
- peak reverse recovery current
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative going I through 0.75 I extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
dIF/dt
RRM
G
V
= 200 V
R
®
Vishay High Power Products
0.01 Ω
D.U.T.
D
IRFP250
S
(3)
t
rr
t
a
(2)
I
RRM
t
b
(4)
Q
rr
0.5 I
RRM
dI
/dt
(rec)M
0.75 I
RRM
(4) Q
- area under curve defined by t
rr
and I
RRM
trr x I
(5) dI current during t
=
Q
rr
/dt - peak rate of change of
(rec)M
portion of t
b
(5)
rr
RRM
2
rr
Fig. 10 - Reverse Recovery Waveform and Definitions
Document Number: 94075 For technical questions, contact: ind-modules@vishay.com
www.vishay.com
Revision: 04-Aug-08 5
HFA80FA120P
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery
Diode, 80 A
ORDERING INFORMATION TABLE
Device code
Dimensions http://www.vishay.com/doc?95036
Packaging information http://www.vishay.com/doc?95037
HF A 80 FA 120 P
51324
- HEXFRED® family
1
2
- Process designator (A = Electron irradiated)
- Average current (80 = 80 A)
3
- Package outline (FA = SOT-227)
4
- Voltage rating (120 = 1200 V)
5
- P = Lead (Pb)-free
6
LINKS TO RELATED DOCUMENTS
6
www.vishay.com For technical questions, contact: ind-modules@vishay.com 6 Revision: 04-Aug-08
Document Number: 94075
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications. Customers using or selling these products for use in such applications do so at their own risk and agree to fully indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com Revision: 12-Mar-07 1
Loading...