C&H Technology HFA80FA120P User Manual

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HFA80FA120P

Vishay High Power Products

SOT-227

PRODUCT SUMMARY

VR 1200 V

V

(typical) 2.6 V

F

t

(typical) 25 ns

rr

at T

I

F(DC)

C

HEXFRED

®

Ultrafast Soft Recovery Diode, 80 A

FEATURES

1

2

40 A at 60 °C

4

3

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• UL pending

• Totally lead (Pb)-free

• Designed and qualified for industrial level

DESCRIPTION/APPLICATIONS

The dual diode series configuration (HFA80FA120P) is used
for output rectification or freewheeling/clamping operation
and high voltage application.
The semiconductor in the SOT-227 package is isolated from
the copper base plate, allowing for common heatsinks and
compact assemblies to be built.
These modules are intended for general applications such as
HV power supplies, electronic welders, motor control and
inverters.

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Maximum repetitive forward current I

Maximum power dissipation P

RMS isolation voltage V

Operating junction and storage
temperature range

T

J

F

FSM

FRM

ISOL

, T

R

TC = 60 °C 40

TJ = 25 °C 400

Rated V

D

TC = 25 °C 178

T

C

Any terminal to case, t = 1 min 2500 V

Stg

square wave, 20 kHz, TC = 60 °C 72

R,

= 100 °C 71

1200 V

ASingle pulse forward current I

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Forward voltage V

Reverse leakage current I

Junction capacitance C

V

BR

FM

RM

IR = 100 µA 1200 - -

IF = 25 A

I

= 40 A - 2.9 3.3

F

I

= 80 A, TJ = 125 °C - 3.4 -

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 0.5 2 mA

J

VR = 200 V See fig. 3 - 43 - pF

T

See fig. 1

See fig. 2

-2.63.0

-2.0-µA

V

Document Number: 94075 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 1

www.vishay.com

HFA80FA120P

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 80 A

DYNAMIC RECOVERY CHARACTERISTICS (TC = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 25 -

Reverse recovery time t

Peak recovery current I

Reverse recovery charge Q

rr

RRM

= 25 °C

J

T

= 125 °C - 110 -

J

TJ = 25 °C - 5.9 -

T

= 125 °C - 10.8 -

J

TJ = 25 °C - 160 -

rr

T

= 125 °C - 630 -

J

= 40 A

I

F

/dt = - 200 A/µs

dI

F

= 200 V

V

R

-52-

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Case to heatsink R

Weight -30- g

Mounting torque -1.3-Nm

R

thJC

thCS

Flat, greased and surface - 0.05 -

--0.7

nsT

A

nC

°C/WJunction to case, both legs conducting - - 0.35

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 04-Aug-08

Document Number: 94075

HFA80FA120P

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery

Diode, 80 A

100

10

- Instantaneous

F

I

Forward Current (A)

1

1.0 1.5 2.0 2.5 3.0 3.5

TJ = 150 °C
T

= 125 °C

J

T

= 25 °C

J

4.0

VF - Forward Voltage Drop (V)

Fig. 1 - Typical Forward Voltage Drop Characteristics Fig. 2 - Typical Values of Reverse Current vs.

1000

10

TJ = 150 °C

1

0.1

0.01

- Reverse Current (µA)

0.001

R

I

0.0001

200 400 600 800 1000 12000

V

R

T

= 125 °C

J

= 25 °C

T

J

- Reverse Voltage (V)

Reverse Voltage

TJ = 25 °C

100

- Junction Capacitance (pF)

T

C

10

1

10 100 1000

V

- Reverse Voltage (V)

R

10 000

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

1

0.1

0.01

0.001

- Thermal Impedance (°C/W)

thJC

Z

0.0001

0.00001 0.0001 0.001 0.01 0.1 1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

t1 - Rectangular Pulse Duration (s)

P

DM

t

1

t

2

1/t2

.

+ T

thJC

C

.

10

Fig. 4 - Maximum Thermal Impedance Z

Characteristics

thJC

Document Number: 94075 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Aug-08 3

HFA80FA120P

C

C

Vishay High Power Products

160

)

140

120

100

80

ase Temperature (°

60

40

20

Allowable

0

0

Square wave
(D = 0.50)

See note (1)

2010 30 40

I

- Average Forward Current (A)

F(AV)

Fig. 5 - Maximum Allowable Case Temperature vs.

Average Forward Current

200

180

160

140

120

100

80

60

40

Average Power Loss (W)

20

0

0

I

F(AV)

2010 30 40

- Average Forward Current (A)

Fig. 6 - Forward Power Loss Characteristics

DC

RMS limit

HEXFRED

Ultrafast Soft Recovery

Diode, 80 A

706050

DC

D = 0.01
D = 0.02
D = 0.05
D = 0.10
D = 0.20
D = 0.50

50 60

®

140

120

100

80

(ns)

rr

t

60

40

20

100

Fig. 7 - Typical Reverse Recovery Time vs. dIF/dt

1800

1600

(nC)

rr

Q

1400

1200

1000

800

600

400

200

IF = 40 A, TJ = 125 °C
I

F

IF = 40 A, TJ = 25 °C

= 20 A, TJ = 25 °C

I

F

0

100

= 20 A, TJ = 125 °C

Fig. 8 - Typical Stored Charge vs. dI

IF = 40 A, TJ = 125 °C

= 20 A, TJ = 125 °C

I

F

IF = 40 A, TJ = 25 °C

= 20 A, TJ = 25 °C

I

F

dIF/dt (A/µs)

dIF/dt (A/µs)

1000

1000

/dt

F

Note

(1)

Formula used: TC = TJ - (Pd + Pd
Pd = Forward power loss = I
Pd

= Inverse power loss = VR1 x IR (1 - D); IR at VR1 = Rated V

REV

F(AV)

) x R

REV

x VFM at (I

;

thJC

/D) (see fig. 6);

F(AV)

R

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94075

4 Revision: 04-Aug-08

HFA80FA120P

HEXFRED

Ultrafast Soft Recovery

Diode, 80 A

L = 70 µH

dIF/dt

adjust

Fig. 9 - Reverse Recovery Parameter Test Circuit

I

F

0

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

(2) I

- peak reverse recovery current

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

dIF/dt

RRM

G

V

= 200 V

R

®

Vishay High Power Products

0.01 Ω

D.U.T.

D

IRFP250

S

(3)

t

rr

t

a

(2)

I

RRM

t

b

(4)

Q

rr

0.5 I

RRM

dI

/dt

(rec)M

0.75 I

RRM

(4) Q

- area under curve defined by t

rr

and I

RRM

trr x I

(5) dI
current during t

=

Q

rr

/dt - peak rate of change of

(rec)M

portion of t

b

(5)

rr

RRM

2

rr

Fig. 10 - Reverse Recovery Waveform and Definitions

Document Number: 94075 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Aug-08 5

HFA80FA120P

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 80 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95036

Packaging information http://www.vishay.com/doc?95037

HF A 80 FA 120 P

51324

- HEXFRED® family

1

2

- Process designator (A = Electron irradiated)

- Average current (80 = 80 A)

3

- Package outline (FA = SOT-227)

4

- Voltage rating (120 = 1200 V)

5

- P = Lead (Pb)-free

6

LINKS TO RELATED DOCUMENTS

6

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 04-Aug-08

Document Number: 94075

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1