C&H Technology HFA50PA60C User Manual

HFA50PA60C

Vishay High Power Products

Ultrafast, Soft Recovery Diode, 2 x 25 A

TO-2 47 AC

PRODUCT SUMMARY

V

R

V

at 25 A at 25 °C 1.7 V

F

I

F(AV)

t

(typical) 23 ns

rr

(maximum) 150 °C

T

J

Q

(typical) 112 nC

rr

dI

/dt (typical) at 125 °C 160 A/µs

(rec)M

I

(typical) 4.5 A

RRM

Base

common

cathode

2

13

Anode

1

Common

cathode

2 x 25 A

2

600 V

Anode

2

HEXFRED

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA50PA60C is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 25 A per leg continuous
current, the HFA50PA60C is especially well suited for use as
the companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t

portion of recovery. The HEXFRED features combine to

b

offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA50PA60C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

®

RRM

rr

®

product line features

RRM

) and

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Maximum continuous forward current

Single pulse forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 93096 For technical questions, contact: [e-mail]
Revision: 29-Jul-08 1

per leg

per device 50

FRM

J

I

F

FSM

, T

R

TC = 100 °C

D

TC = 25 °C 150

T

= 100 °C 60

C

Stg

600 V

25

225

100

W

- 55 to + 150 °C

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A

HFA50PA60C

Vishay High Power Products

HEXFRED

®

Ultrafast, Soft Recovery Diode, 2 x 25 A

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5, 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of recovery
current during t
See fig. 8

b

dI

dI

V

I

RM

t

rr1

t

rr2

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

BR

FM

rr

rr1

rr2

IR = 100 µA 600 - -

IF = 25 A

I

= 50 A - 1.5 2.0

F

= 25 A, TJ = 125 °C - 1.3 1.7

I

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 600 2000

J

VR = 200 V See fig. 3 - 55 100 pF

T

Measured lead to lead 5 mm from package body - 12 - nH

S

See fig. 1

See fig. 2

-1.31.7

-1.520

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 23 -

TJ = 25 °C

-5075

TJ = 125 °C - 105 160

TJ = 25 °C - 4.5 10

I

TJ = 125 °C - 8.0 15

TJ = 25 °C - 112 375

TJ = 125 °C - 420 1200

= 25 A

F

/dt = 200 A/µs

dI

F

= 200 V

V

R

/dt1 TJ = 25 °C - 250 -

/dt2 TJ = 125 °C - 160 -

V

µA

nst

A

nC

A/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

lead

Junction to case,
single leg conducting

Junction to case,

R

thJC

both legs conducting

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

R

thJA

R

thCS

Weight

Mounting torque

Marking device Case style TO-247AC HFA50PA60C

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2 Revision: 29-Jul-08

0.063" from case (1.6 mm) for 10 s - - 300 °C

- - 0.83

- - 0.42

Typical socket mount - - 40

Mounting surface, flat, smooth and greased - 0.25 -

-6.0- g

-0.21- oz.

6.0

(5.0)

-

12

(10)

Document Number: 93096

K/W

kgf · cm
(lbf · in)

HFA50PA60C

100

HEXFRED

®

Vishay High Power Products

Ultrafast, Soft Recovery Diode, 2 x 25 A

10000

T = 150°C

1000

100

10

1

0.1

T = 150°C

J

T = 125°C

J

T = 25°C

10

J

0.01

1000

A

J

T = 125°C

J

T = 25°C

J

0 200 400 600

Reverse Voltage - V (V)

R

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

1

0.6 1.0 1.4 1.8 2.2 2.6

Forward Voltage Drop - V (V)

FM

Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous

Forward Current (Per Leg)

1

)

D = 0.50

C
J h t

Z (

0.20

e
s n o p s e

0.10

0.1

R

l a m r e h T

0.05

0.02

0.01

0.01

0.00001 0.0001 0.001 0.01 0.1 1

SINGLE PULSE

(THERMAL RESPONSE)

t , Rectangular Pulse Duration (sec)

1

T = 25°C

J

100

10

1 10 100 1000

Reverse Voltage - V (V)

R

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage

(Per Leg)

P

DM

t

1

t

2

Notes:

1. Duty factor D = t / t

2. Peak T = P x Z + T

1 2

J DM thJC C

Fig. 4 - Maximum Thermal Impedance Z

Characteristics (Per Leg)

thJC

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Revision: 29-Jul-08 3

HFA50PA60C

Vishay High Power Products

140

120

100

80

60

40

20

V = 200V

R

T = 125°C

J

T = 25°C

J

0

100 1000

Fig. 5 - Typical Reverse Recovery Time vs.

di /dt - (A/µs)

f

dI

/dt (Per Leg)

F

HEXFRED

®

Ultrafast, Soft Recovery Diode, 2 x 25 A

1400

V = 200V

R

I = 50A

F

I = 25A

F

I = 10A

F

T = 125°C

J

T = 25°C

1200

1000

J

I = 50A

F

I = 25A

F

I = 10A

800

600

400

200

F

0

100 1000

di /dt - (A/µs)

Fig. 7 - Typical Stored Charge vs. dI

f

/dt (Per Leg)

F

30

V = 200V

R

T = 125°C

J

T = 25°C

J

25

I = 50A

F

I = 25A

F

20

I = 10A

F

15

10

5

0

100 1000

Fig. 6 - Typical Recovery Current vs. dI

di /dt - (A/µs)

f

/dt (Per Leg)

F

10000

V = 200V

R

T = 125°C

J

T = 25°C

J

I = 50A

F

I = 25A

F

I = 10A

F

1000

100

100 1000

Fig. 8 - Typical dI

di /dt - (A/µs)

f

/dt vs. dIF/dt (Per Leg)

(rec)M

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Document Number: 93096

4 Revision: 29-Jul-08

HFA50PA60C

HEXFRED

®

Ultrafast, Soft Recovery Diode, 2 x 25 A

V

= 200 V

R

0.01 Ω

L = 70 µH

D.U.T.

dIF/dt

adjust

G

Fig. 9 - Reverse Recovery Parameter Test Circuit

I

F

0

t

D

IRFP250

S

(3)

t

rr

t

a

b

Vishay High Power Products

dIF/dt

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

(2) I

- peak reverse recovery current

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

Fig. 10 - Reverse Recovery Waveform and Definitions

(2)

I

RRM

(4) Q
and I

(5) dI
current during t

(4)

Q

rr

0.5 I

RRM

(rec)M

Q

=

rr

(5)

/dt

trr x I

RRM

2

portion of t

b

rr

dI

0.75 I

RRM

- area under curve defined by t

rr

RRM

/dt - peak rate of change of

(rec)M

rr

Document Number: 93096 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 29-Jul-08 5

HFA50PA60C

Vishay High Power Products

ORDERING INFORMATION TABLE

Device code

HF A 50 PA 60 C -

1

- HEXFRED® family

- Process designator: A = Subs. electron irradiated

2

- Current rating (50 = 50 A)

3

3

4

- Package outline (PA = TO-247, 3 pins)

4

5

5

- Voltage rating (60 = 600 V)

- Configuration (C = Center tap common cathode)

6

- None = Standard production

7

HEXFRED

®

Ultrafast, Soft Recovery Diode, 2 x 25 A

51324

67

B = Subs. platinum

PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95223

Part marking information http://www.vishay.com/doc?95226

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6 Revision: 29-Jul-08

Document Number: 93096

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

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Revision: 12-Mar-07 1