HFA32PA120C
Vishay High Power Products
Ultrafast Soft Recovery Diode, 2 x 16 A
TO-2 47AC
PRODUCT SUMMARY
VR per leg 1200 V
at 16 A at 25 °C 3.0 V
V
F
I
F(AV)
t
(typical) per leg 5.8 A
rr
T
(maximum) 150 °C
J
(typical) per leg 260 nC
Q
rr
I
(typical) per leg 5.8 A
RRM
1 3
Anode
1
Base
common
cathode
2
Common
cathode
2 x 16 A
HEXFRED
2
Anode
2
®
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA32PA120C is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 16 A per leg continuous current, the
HFA32PA120C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t
portion of recovery. The HEXFRED features combine to
b
offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA32PA120C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
RRM
rr
®
product line features
RRM
) and
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
Document Number: 93095 For technical questions, contact: diodes-tech@vishay.com
Revision: 29-Jul-08 1
per leg
per device 32
J
I
F
FSM
FRM
, T
R
TC = 100 °C
D
TC = 25 °C 151
T
= 100 °C 60
C
Stg
1200 V
16
190
64
°C
- 55 to + 150 W
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A
HFA32PA120C
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 16 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
rr1
t
rr2
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
IR = 100 µA 1200 - -
IF = 16 A
I
= 32 A - 3.2 3.93
F
I
= 16 A, TJ = 125 °C - 2.3 2.7
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 375 2000
J
VR = 200 V See fig. 3 - 27 40 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
See fig. 1
See fig. 2
-2.53.0
-0.7520
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 30 -
TJ = 25 °C
- 90 135
TJ = 125 °C - 164 245
TJ = 25 °C - 5.8 10
= 16 A
TJ = 125 °C - 8.3 15
TJ = 25 °C - 260 675
TJ = 125 °C - 680 1838
I
F
dI
/dt = 200 A/µs
F
V
= 200 V
R
/dt1 TJ = 25 °C - 120 -
/dt2 TJ = 125 °C - 76 -
V
µA
nst
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
Thermal resistance,
junction to case
Thermal resistance,
junction to ambient
Thermal resistance,
case to heatsink
lead
R
thJC
R
thJA
R
thCS
Weight
Mounting torque
Marking device Case style TO-247AC (JEDEC) HFA32PA120C
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2 Revision: 29-Jul-08
0.063" from case (1.6 mm) for 10 s - - 300 °C
- - 0.83
Typical socket mount - - 80
Mounting surface, flat, smooth and greased - 0.50 -
-2.0- g
-0.07- oz.
6.0
(5.0)
-
12
(10)
Document Number: 93095
K/W
kgf · cm
(lbf · in)
A
HFA32PA120C
100
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 2 x 16 A
1000
T = 150 °C
J
100
T = 125 °C
J
10
1
T = 25 °C
J
0.1
10
T = 150°C
J
T = 125°C
J
T = 25°C
J
1
0.01
0 200 400 600 800 1000 1200
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage
1000
0.1
02468
Forw ard Volt age Dro p - V (V)
FM
Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous
Forward Current
1
D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01
0.1
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10 100
Single Pulse
(Thermal Resistance)
100
10
1
1 10 100 1000 10000
T = 25 °C
J
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage
P
DM
t
1
t
2
Notes:
1. Duty factor D = t1/ t 2
2. Peak T = Pdm x ZthJC + Tc
J
A
Fig. 4 - Maximum Thermal Impedance Z
Document Number: 93095 For technical questions, contact: diodes-tech@vishay.com
Characteristics
thJC
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Revision: 29-Jul-08 3
HFA32PA120C
Vishay High Power Products
270
220
If = 16 A
If = 8 A
170
120
70
V = 200V
R
T = 125 °C
J
T = 25 °C
J
20
100 1000
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 16 A
1600
V = 200V
1400
1200
1000
800
600
400
200
R
T = 125 °C
J
T = 25 °C
J
If = 16A
If = 8A
0
100 1000
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
30
V = 200V
25
20
R
T = 125 °C
J
T = 25 °C
J
If = 16 A
If = 8 A
15
10
5
0
100 1000
Fig. 6 - Typical Recovery Current vs. dI
di
f
/dt (Per Leg)
F
Fig. 7 - Typical Stored Charge vs. dI
F
10000
V = 200V
R
T = 125 °C
J
T = 25 °C
J
1000
If = 16A
If = 8A
100
10
100 1000
Fig. 8 - Typical dI
/dt vs. dIF/dt (Per Leg)
(rec)M
/dt (Per Leg)
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4 Revision: 29-Jul-08
Document Number: 93095
HFA32PA120C
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 16 A
V
= 200 V
R
0.01 Ω
L = 70 µH
D.U.T.
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
t
D
IRFP250
S
(3)
t
rr
t
a
b
Vishay High Power Products
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
(2)
I
RRM
(4) Q
and I
(5) dI
current during t
(4)
Q
rr
0.5 I
RRM
(rec)M
Q
=
rr
(5)
/dt
trr x I
RRM
2
portion of t
b
rr
dI
0.75 I
RRM
- area under curve defined by t
rr
RRM
/dt - peak rate of change of
(rec)M
rr
Document Number: 93095 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 29-Jul-08 5
HFA32PA120C
Vishay High Power Products
ORDERING INFORMATION TABLE
Device code
HF A 32 PA 120 C -
- HEXFRED® family
1
- Process designator: A = Subs. electron irradiated
2
- Current rating (32 = 32 A)
3
3
4
- Package outline (PA = TO-247, 3 pins)
4
5
5
- Voltage rating (120 = 1200 V)
- Configuration (C = Center tap common cathode)
6
- None = Standard production
7
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 16 A
51324
B = Subs. platinum
PbF = Lead (Pb)-free
67
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95223
Part marking information http://www.vishay.com/doc?95226
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6 Revision: 29-Jul-08
Document Number: 93095
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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