C&H Technology HFA32PA120C User Manual

HFA32PA120C

Vishay High Power Products

Ultrafast Soft Recovery Diode, 2 x 16 A

TO-2 47AC

PRODUCT SUMMARY

VR per leg 1200 V

at 16 A at 25 °C 3.0 V

V

F

I

F(AV)

t

(typical) per leg 5.8 A

rr

T

(maximum) 150 °C

J

(typical) per leg 260 nC

Q

rr

I

(typical) per leg 5.8 A

RRM

1 3

Anode

1

Base

common

cathode

2

Common

cathode

2 x 16 A

HEXFRED

2

Anode

2

®

FEATURES

• Ultrafast recovery

• Ultrasoft recovery

• Very low I

• Very low Q

• Specified at operating conditions

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced power loss in diode and switching transistor

• Higher frequency operation

• Reduced snubbing

• Reduced parts count

DESCRIPTION

HFA32PA120C is a state of the art ultrafast recovery diode.
Employing the latest in epitaxial construction and advanced
processing techniques it features a superb combination of
characteristics which result in performance which is
unsurpassed by any rectifier previously available. With basic
ratings of 1200 V and 16 A per leg continuous current, the
HFA32PA120C is especially well suited for use as the
companion diode for IGBTs and MOSFETs. In addition to
ultrafast recovery time, the HEXFRED
extremely low values of peak recovery current (I
does not exhibit any tendency to “snap-off” during the
t

portion of recovery. The HEXFRED features combine to

b

offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA32PA120C is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.

RRM

rr

®

product line features

RRM

) and

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Maximum continuous forward current

Single pulse forward current I

Maximum repetitive forward current I

Maximum power dissipation P

Operating junction and storage temperature range T

Document Number: 93095 For technical questions, contact: [e-mail]
Revision: 29-Jul-08 1

per leg

per device 32

J

I

F

FSM

FRM

, T

R

TC = 100 °C

D

TC = 25 °C 151

T

= 100 °C 60

C

Stg

1200 V

16

190

64

°C

- 55 to + 150 W

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A

HFA32PA120C

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery Diode, 2 x 16 A

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse
leakage current

V

BR

FM

I

RM

Junction capacitance C

Series inductance L

DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

dI

dI

rr1

t

rr2

I

RRM1

I

RRM2

Q

Q

(rec)M

(rec)M

rr

rr1

rr2

Reverse recovery time
See fig. 5, 10

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of fall of recovery
current during t

b

See fig. 8

IR = 100 µA 1200 - -

IF = 16 A

I

= 32 A - 3.2 3.93

F

I

= 16 A, TJ = 125 °C - 2.3 2.7

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 375 2000

J

VR = 200 V See fig. 3 - 27 40 pF

T

Measured lead to lead 5 mm from package body - 8.0 - nH

S

See fig. 1

See fig. 2

-2.53.0

-0.7520

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 30 -

TJ = 25 °C

- 90 135

TJ = 125 °C - 164 245

TJ = 25 °C - 5.8 10

= 16 A

TJ = 125 °C - 8.3 15

TJ = 25 °C - 260 675

TJ = 125 °C - 680 1838

I

F

dI

/dt = 200 A/µs

F

V

= 200 V

R

/dt1 TJ = 25 °C - 120 -

/dt2 TJ = 125 °C - 76 -

V

µA

nst

A

nC

A/µs

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Lead temperature T

Thermal resistance,
junction to case

Thermal resistance,
junction to ambient

Thermal resistance,
case to heatsink

lead

R

thJC

R

thJA

R

thCS

Weight

Mounting torque

Marking device Case style TO-247AC (JEDEC) HFA32PA120C

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2 Revision: 29-Jul-08

0.063" from case (1.6 mm) for 10 s - - 300 °C

- - 0.83

Typical socket mount - - 80

Mounting surface, flat, smooth and greased - 0.50 -

-2.0- g

-0.07- oz.

6.0

(5.0)

-

12

(10)

Document Number: 93095

K/W

kgf · cm
(lbf · in)

A

HFA32PA120C

100

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery Diode, 2 x 16 A

1000

T = 150 °C

J

100

T = 125 °C

J

10

1

T = 25 °C

J

0.1

10

T = 150°C

J

T = 125°C

J

T = 25°C

J

1

0.01
0 200 400 600 800 1000 1200

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage

1000

0.1
02468

Forw ard Volt age Dro p - V (V)

FM

Fig. 1 - Maximum Forward Voltage Drop vs. Instantaneous

Forward Current

1

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

0.1

0.01

0.00001 0.0001 0.001 0.01 0.1 1 10 100

Single Pulse

(Thermal Resistance)

100

10

1

1 10 100 1000 10000

T = 25 °C

J

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage

P

DM

t

1

t

2

Notes:

1. Duty factor D = t1/ t 2

2. Peak T = Pdm x ZthJC + Tc

J

A

Fig. 4 - Maximum Thermal Impedance Z

Document Number: 93095 For technical questions, contact: [e-mail]

Characteristics

thJC

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Revision: 29-Jul-08 3