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HFA320NJ40CPbF
Vishay High Power Products
Ultrafast Soft Recovery Diode, 320 A
TO-2 44
PRODUCT SUMMARY
I
F(AV)
V
R
at T
I
F(DC)
C
Lug
terminal
anode 1
Base common
cathode
320 A
400 V
255 A at 85 °C
HEXFRED
Lug
terminal
anode 2
®
FEATURES
• Very low Qrr and t
• Lead (Pb)-free
• Designed and qualified for industrial level
BENEFITS
• Reduced RFI and EMI
• Reduced snubbing
DESCRIPTION
HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions. The
softness of the recovery eliminates the need for a snubber in
most applications. These devices are ideally suited for
power converters, motors drives and other applications
where switching losses are significant portion of the total
losses.
rr
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Cathode to anode voltage V
Continuous forward current I
Single pulse forward current I
Non-repetitive avalanche energy E
Maximum power dissipation P
Operating junction and storage
temperature range
T
J
F
FSM
AS
, T
R
TC = 25 °C 420
= 85 °C 255
T
C
T
= 115 °C 160
C
Limited by junction temperature 1200
L = 100 µH, duty cycle limited by maximum T
D
TC = 25 °C 625
T
= 100 °C 250
C
Stg
J
400 V
A
1.4 mJ
W
- 55 to 150 °C
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
Junction capacitance C
Series inductance L
V
BR
FM
I
RM
T
S
IR = 100 µA 400 - -
IF = 160 A
I
= 320 A - 1.30 1.54
F
I
= 160 A, TJ = 125 °C - 1.00 1.20
F
TJ = 125 °C, VR = 400 V See fig. 2 - 0.9 3 mA
VR = 200 V See fig. 3 - 370 500 pF
From top of terminal hole to mounting plane - 5.0 - nH
See fig. 1
- 1.10 1.35
V
Document Number: 94072 For technical questions, contact: ind-modules@vishay.com
Revision: 01-Aug-08 1
www.vishay.com
HFA320NJ40CPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery
Diode, 320 A
DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Reverse recovery time
See fig. 5
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of recovery current
See fig. 8
dI
t
rr
I
RRM
Q
(rec)M
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Maximum junction and storage temperature range T
Thermal resistance, junction to case
Typical thermal resistance, case to heatsink R
Weight
Mounting torque
Terminal torque 30 (3.4) - 40 (4.6)
Vertical pull --80
2" lever pull --35
Note
(1)
Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf ⋅ in steps until desired or maximum torque limits are reached.
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 45 -
= 25 °C
J
T
= 125 °C - 290 440
J
- 90 140
TJ = 25 °C - 8.7 20
= 160 A
I
T
= 125 °C - 18 30
J
TJ = 25 °C - 420 1100
rr
T
= 125 °C - 2600 7000
J
= 25 °C - 300 -
T
J
/dt
T
= 125 °C - 280 -
J
per leg
per module - - 0.095
F
dI
/dt = 200 A/µs
F
V
= 200 V
R
, T
J
Stg
R
thJC
thCS
- 55 - 150 °C
- - 0.19
-0.10-
-68- g
-2.4-oz.
(1)
30 (3.4) - 40 (4.6)
center hole 12 (1.4) - 18 (2.1)
°C/W
K/W
N ⋅ m
(lbf ⋅ in)
lbf ⋅ in
nsT
A
nC
A/µs
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94072
2 Revision: 01-Aug-08