HFA30TA60CSPbF
Vishay High Power Products
Ultrafast Soft Recovery Diode, 2 x 15 A
Base
common
cathode
2
1
Anode Anode
PRODUCT SUMMARY
V
R
V
at 15 A at 25 °C 1.7 V
F
I
F(AV)
t
(typical) 19 ns
rr
T
(maximum) 150 °C
J
Q
(typical) 80 nC
rr
/dt (typical) at 125 °C 160 A/µs
dI
(rec)M
I
(typical) 4.0 A
RRM
2
Common
cathode
D2PA K
3
600 V
2 x 15 A
HEXFRED
FEATURES
• Ultrafast recovery
• Ultrasoft recovery
• Very low I
• Very low Q
• Specified at operating conditions
• Lead (Pb)-free
• Designed and qualified for Q101 level
BENEFITS
• Reduced RFI and EMI
• Reduced power loss in diode and switching transistor
• Higher frequency operation
• Reduced snubbing
• Reduced parts count
DESCRIPTION
HFA30TA60CS is a state of the art center tap ultrafast
recovery diode. Employing the latest in epitaxial construction
and advanced processing techniques it features a superb
combination of characteristics which result in performance
which is unsurpassed by any rectifier previously available.
With basic ratings of 600 V and 15 A per leg continuous
current, the HFA30TA60CS is especially well suited for use
as the companion diode for IGBTs and MOSFETs. In
addition to ultrafast recovery time, the HEXFRED
line features extremely low values of peak recovery current
(I
RRM
the t
to offer designers a rectifier with lower noise and significantly
lower switching losses in both the diode and the switching
transistor. These HEXFRED advantages can help to
significantly reduce snubbing, component count and
heatsink sizes. The HEXFRED HFA30TA60CS is ideally
suited for applications in power supplies and power
conversion systems (such as inverters), motor drives, and
many other similar applications where high speed, high
efficiency is needed.
®
Available
RRM
rr
) and does not exhibit any tendency to “snap-off” during
portion of recovery. The HEXFRED features combine
b
RoHS*
COMPLIANT
®
product
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Maximum continuous forward current
Single pulse forward current I
Maximum repetitive forward current I
Maximum power dissipation P
Operating junction and storage temperature range T
* Pb containing terminations are not RoHS compliant, exemptions may apply
Document Number: 94071 For technical questions, contact: diodes-tech@vishay.com
Revision: 25-Jul-08 1
per leg
per device 30
J
I
F
FSM
FRM
, T
R
TC = 100 °C
D
TC = 25 °C 74
T
= 100 °C 29
C
Stg
600 V
15
150
60
°C
- 55 to + 150 W
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A
HFA30TA60CSPbF
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 15 A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode
breakdown voltage
Maximum forward voltage V
Maximum reverse
leakage current
V
BR
FM
I
RM
Junction capacitance C
Series inductance L
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
dI
dI
rr1
t
rr2
I
RRM1
I
RRM2
Q
Q
(rec)M
(rec)M
rr
rr1
rr2
Reverse recovery time
See fig. 5, 10
Peak recovery current
See fig. 6
Reverse recovery charge
See fig. 7
Peak rate of fall of recovery
current during t
b
See fig. 8
IR = 100 µA 600 - -
IF = 15 A
I
= 30 A - 1.5 2.0
F
I
= 15 A, TJ = 125 °C - 1.2 1.6
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 400 1000
J
VR = 200 V See fig. 3 - 25 50 pF
T
Measured lead to lead 5 mm from package body - 8.0 - nH
S
See fig. 1
See fig. 2
-1.31.7
-1.010
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 19 -
TJ = 25 °C
-4260
TJ = 125 °C - 70 90
TJ = 25 °C - 4.0 6.0
TJ = 125 °C - 6.5 10
TJ = 25 °C - 80 180
TJ = 125 °C - 220 450
I
= 15 A
F
/dt = 200 A/µs
dI
F
V
= 200 V
R
/dt1 TJ = 25 °C - 188 -
/dt2 TJ = 125 °C - 160 -
V
µA
nst
A
nC
A/µs
THERMAL - MECHANICAL SPECIFICATIONS PER LEG
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Lead temperature T
lead
Junction to case,
single leg conducting
Junction to case,
R
thJC
both legs conducting
Thermal resistance,
junction to ambient
R
thJA
Weight
Mounting torque
Marking device Case style D
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2 Revision: 25-Jul-08
0.063" from case (1.6 mm) for 10 s - - 300 °C
--1.7
- - 0.85
Typical socket mount - - 80
-2.0- g
-0.07- oz.
6.0
(5.0)
2
PAK HFA30TA60CS
(10)
Document Number: 94071
12
K/W
kgf · cm
(lbf · in)
A
A
HFA30TA60CSPbF
100
HEXFRED
®
Vishay High Power Products
Ultrafast Soft Recovery Diode, 2 x 15 A
10000
T = 150°C
1000
100
10
1
0.1
0.01
T = 150°C
J
T = 125°C
10
J
T = 25°C
J
100
A
J
T = 125°C
J
T = 25°C
J
0 100 200 300 400 500 600
Reverse Voltage - V (V)
R
Fig. 2 - Typical Reverse Current vs.
Reverse Voltage (Per Leg)
1
1.0 1.2 1.4 1.6 1.8 2.0 2.2 2.4
Forward Voltage Drop - V (V)
FM
Fig. 1 - Maximum Forward Voltage Drop vs.
Instantaneous Forward Current (Per Leg)
10
thJC
1
D = 0.50
0.20
0.10
0.05
0.1
0.02
Thermal Response (Z )
0.01
0.01
0.00001 0.0001 0.001 0.01 0.1 1 10
SINGLE PUL SE
(THERMAL RESPONSE)
A
10
0 100 200 300 400 500 600
Notes:
1. Duty factor D = t / t
2. Peak T =P x Z + T
t , Rectangular Pulse Duration ( sec)
1
T = 25°C
J
Reverse Voltage - V (V)
R
Fig. 3 - Typical Junction Capacitance vs.
Reverse Voltage (Per Leg)
P
DM
t
1
t
2
1 2
J DM thJC C
Fig. 4 - Maximum Thermal Impedance Z
Characteristics (Per Leg)
thJC
Document Number: 94071 For technical questions, contact: diodes-tech@vishay.com
Revision: 25-Jul-08 3
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HFA30TA60CSPbF
A
A
A
A
Vishay High Power Products
100
80
60
40
20
V = 200V
R
T = 125°C
J
T = 25°C
J
0
di /dt - (A/µs)
f
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 15 A
800
V = 200V
600
400
200
0
R
T = 125°C
J
T = 25°C
J
I = 30A
F
I = 15A
F
I = 5.0A
F
I = 30A
F
I = 15A
F
I = 5.0A
F
0001001
di /dt - (A/µs)
f
0001001
Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)
25
V = 200V
R
T = 125°C
J
T = 25°C
J
20
I = 30A
F
I = 15A
F
I = 5.0A
F
15
10
5
0
di /dt - (A/µs)
f
0001001
Fig. 7 - Typical Stored Charge vs. dI
10000
V = 200V
R
T = 125°C
J
T = 25°C
J
I = 30A
F
I = 15A
1000
100
F
I = 5.0A
F
di /dt - (A/µs)
f
/dt (Per Leg)
F
0001001
Fig. 6 - Typical Recovery Current vs. dI
/dt (Per Leg)
F
Fig. 8 - Typical dI
/dt vs. dIF/dt (Per Leg)
(rec)M
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4 Revision: 25-Jul-08
Document Number: 94071
HFA30TA60CSPbF
HEXFRED
®
Ultrafast Soft Recovery Diode, 2 x 15 A
V
= 200 V
R
0.01 Ω
L = 70 µH
D.U.T.
(3)
a
(2)
D
IRFP250
S
t
rr
t
b
I
RRM
0.5 I
dI
0.75 I
RRM
(4) Q
- area under curve defined by t
rr
and I
RRM
(5) dI
current during t
Q
/dt - peak rate of change of
(rec)M
dIF/dt
adjust
G
Fig. 9 - Reverse Recovery Parameter Test Circuit
I
F
0
dIF/dt
(1)
/dt - rate of change of current
(1) dI
F
through zero crossing
- peak reverse recovery current
(2) I
RRM
- reverse recovery time measured
(3) t
rr
from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.
to point where a line passing
F
and 0.50 I
RRM
RRM
Fig. 10 - Reverse Recovery Waveform and Definitions
t
Vishay High Power Products
(4)
Q
rr
RRM
(5)
/dt
(rec)M
rr
trr x I
RRM
=
rr
2
portion of t
b
rr
LINKS TO RELATED DOCUMENTS
Dimensions http://www.vishay.com/doc?95046
Part marking information http://www.vishay.com/doc?95044
Packaging information http://www.vishay.com/doc?95032
Document Number: 94071 For technical questions, contact: diodes-tech@vishay.com
www.vishay.com
Revision: 25-Jul-08 5
Legal Disclaimer Notice
Vishay
Notice
The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.
Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.
Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.
The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.
International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.
®
, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN
®
Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1
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