C&H Technology HFA210NJ60CPbF User Manual

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2

HFA210NJ60CPbF

Vishay High Power Products

Ultrafast Soft Recovery Diode, 210 A

TO-244

PRODUCT SUMMARY

I

F(AV)

V

R

I

at T

F(DC)

C

Lug
terminal
anode 1

Base common

cathode

210 A

600 V

120 A at 100 °C

HEXFRED

FEATURES

Lug
termina
anode

• Very low Qrr and t

• Lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Reduced RFI and EMI

• Reduced snubbing

DESCRIPTION

HEXFRED® diodes are optimized to reduce losses and
EMI/RFI in high frequency power conditioning systems. An
extensive characterization of the recovery behavior for
different values of current, temperature and dI/dt simplifies
the calculations of losses in the operating conditions.
The softness of the recovery eliminates the need for a
snubber in most applications. These devices are ideally
suited for power converters, motors drives and other
applications where switching losses are significant portion of
the total losses.

®

rr

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Non-repetitive avalanche energy E

Maximum power dissipation P

Operating junction and storage
temperature range

T

J

F

FSM

AS

, T

R

TC = 25 °C 235

= 100 °C 120

C

Limited by junction temperature 600

L = 100 µH, duty cycle limited by maximum T

D

Stg

TC = 25 °C 463

T

= 100 °C 185

C

J

600 V

AT

2.2 mJ

W

- 55 to + 150 °C

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode
breakdown voltage

Maximum forward voltage V

Maximum reverse leakage current I

Junction capacitance C

Series inductance L

V

BR

FM

RM

T

S

IR = 100 µA 600 - -

IF = 105 A

I

= 210 A - 1.6 2.25

F

I

= 105 A, TJ = 125 °C - 1.3 1.56

F

TJ = 125 °C, VR = 480 V See fig. 2 - 1.8 6.0 mA

VR = 200 V See fig. 3 - 200 300 pF

From top of terminal hole to mounting plane - 6.0 - nH

See fig. 1

- 1.38 1.9

V

Document Number: 94062 For technical questions, contact: [e-mail]
Revision: 01-Aug-08 1

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HFA210NJ60CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 210 A

DYNAMIC RECOVERY CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Reverse recovery time
See fig. 5

Peak recovery current
See fig. 6

Reverse recovery charge
See fig. 7

Peak rate of recovery current
See fig. 8

dI

t

I

RRM

Q

(rec)M

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Thermal resistance, junction to case

Typical thermal resistance, case to heatsink R

Weight

Mounting torque

Mounting torque center hole 12 (1.4) - 18 (2.1)

Terminal torque 30 (3.4) - 40 (4.6)

Vertical pull --80

2" lever pull --35

Note

(1)

Mounting surface must be smooth, flat, free of burrs or other protrusions. Apply a thin even film or thermal grease to mounting surface.
Gradually tighten each mounting bolt in 5 to 10 lbf ⋅ in steps until desired or maximum torque limits are reached

(1)

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 35 -

rr

= 25 °C

J

T

= 125 °C - 160 240

J

- 90 140

TJ = 25 °C - 10 18

= 105 A

I

T

= 125 °C - 15 30

J

TJ = 25 °C - 450 1300

rr

T

= 125 °C - 1200 3600

J

= 25 °C - 310 -

T

J

/dt

T

= 125 °C - 240 -

J

per leg

per module - - 0.135

F

/dt = 200 A/µs

dI

F

V

= 200 V

R

, T

J

Stg

R

thJC

thCS

- 55 - 150 °C

- - 0.27

-0.10-

-68- g

-2.4-oz.

30 (3.4) - 40 (4.6)

°C/W

K/W

N ⋅ m

(lbf ⋅ in)

lbf ⋅ in

nsT

A

nC

A/µs

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Document Number: 94062

2 Revision: 01-Aug-08

HFA210NJ60CPbF

1000

100

10

1

- Instantaneous Forward Current (A)

F

I

0.2 3.21.2

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

10 000

1000

- Reverse Current (µA)

R

I

100

0.1

TJ = 150 °C

10

1

100

Fig. 2 - Typical Reverse Current vs.

Ultrafast Soft Recovery

TJ = 150 °C
T

= 125 °C

J

= 25 °C

T

J

0.7 2.2

VFM - Forward Voltage Drop (V)

200 400 500 600300

VR - Reverse Voltage (V)

Reverse Voltage (Per Leg)

1.7

TJ = 125 °C

TJ = 25 °C

2.7

HEXFRED

®

Diode, 210 A

Vishay High Power Products

10 000

1000

TJ = 25 °C

100

- Junction Capacitance (pF)

T

C

10

1 10 100 1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs.

Reverse Voltage (Per Leg)

160

140

120

100

80

60

Maximum Allowable

40

Case Temperature (°C)

20

0

0 100 250

50 150 200

I

- DC Forward Current (A)

F(AV)

Fig. 4 - Maximum Allowable Case Temperature vs.

DC Forward Current (Per Leg)

DC

240

200 A, 125 °C

200

100

105 A, 125 °C

40 A, 125 °C

200 A, 25 °C

105 A, 25 °C

40 A, 25 °C

1000

(ns)

rr

t

160

120

80

40

dIF/dt (A/µs)

Fig. 5 - Typical Reverse Recovery Time vs. dI

/dt (Per Leg)

F

Document Number: 94062 For technical questions, contact: [e-mail]

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Revision: 01-Aug-08 3

HFA210NJ60CPbF

Vishay High Power Products

100

200 A, 125 °C
105 A, 125 °C

40 A, 125 °C

(A)

10

RRM

I

1

100

dIF/dt (A/µs)

Fig. 6 - Typical Recovery Current vs. dIF/dt (Per Leg) Fig. 7 - Typical Stored Charge vs. dIF/dt (Per Leg)

200 A, 25 °C
105 A, 25 °C

40 A, 25 °C

10 000

HEXFRED

®

Ultrafast Soft Recovery

Diode, 210 A

4000

3500

3000

2500

2000

(nC)

rr

Q

1500

1000

500

1000

0

100

200 A, 125 °C

200 A, 25 °C

105 A, 25 °C

dIF/dt (A/µs)

105 A, 125 °C

40 A, 125 °C

40 A, 25 °C

1000

200 A, 25 °C
105 A, 25 °C

1000

/dt (A/µs)

(rec)M

dI

100

100

40 A, 25 °C

dIF/dt (A/µs)

Fig. 8 - Typical dI

1

0.1

D = 0.50

0.01

- Thermal Response

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1

Single pulse

(thermal response)

D = 0.33
D = 0.25
D = 0.17
D = 0.08

/dt vs. dIF/dt (Per Leg)

(rec)M

t1 - Rectangular Pulse Duration (s)

Fig. 9 - Maximum Thermal Impedance Z

200 A, 125 °C
105 A, 125 °C

40 A, 125 °C

1000

Characteristics (Per Leg)

thJC

1

10

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Document Number: 94062

4 Revision: 01-Aug-08

HFA210NJ60CPbF

HEXFRED

®

Vishay High Power Products

Ultrafast Soft Recovery

Diode, 210 A

V

= 200 V

R

0.01 Ω

L = 70 µH

D.U.T.

dIF/dt

adjust

G

Fig. 10 - Reverse Recovery Parameter Test Circuit

I

F

0

t

D

IRFP250

S

(3)

t

rr

t

a

b

Current
monitor

D.U.T.

dIF/dt

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

(2) I

- peak reverse recovery current

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

Fig. 11 - Reverse Recovery Waveform and Definitions

L = 100 µH

High-speed

switch

= 25 Ω

R

g

Freewheel

diode

V

= 50 V

d

(2)

I

RRM

(4) Q
and I

(5) dI
current during t

+

(4)

Q

rr

0.5 I

RRM

(rec)M

Q

=

rr

(5)

/dt

trr x I

RRM

2

portion of t

b

I

L(PK)

V

V

R(RATED)

rr

(AVAL)

dI

0.75 I

RRM

- area under curve defined by t

rr

RRM

/dt - peak rate of change of

(rec)M

rr

Decay

time

Fig. 12 - Avalanche Test Circuit and Waveforms

Document Number: 94062 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 01-Aug-08 5

HFA210NJ60CPbF

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 210 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95021

HFA 210 NJ 60 C PbF

51324

1 - HEXFRED® family, electron irradiated

2 - Average current rating

3 - NJ = TO-244

4 - Voltage rating (60 = 600 V)

5 - C = Common cathode

6 - Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

6

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6 Revision: 01-Aug-08

Document Number: 94062

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1