C&H Technology HFA120FA60P User Manual

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HFA120FA60P

Vishay High Power Products

Ultrafast Soft Recovery Diode, 60 A

SOT-227

PRODUCT SUMMARY

V

R

V

(typical) at 125 °C 1.4 V

F

Q

(typical) 270 nC

rr

(typical) 7.0 A

I

RRM

t

(typical) 65 ns

rr

dI

/dt (typical) at 125 °C 270 A/µs

(rec)M

I

at T

F(DC)

C

K2

K1

600 V

40 A at 100 °C

HEXFRED

A2

A1

®

FEATURES

• Fast recovery time characteristic

• Electrically isolated base plate

• Large creepage distance between terminal

• Simplified mechanical designs, rapid assembly

• UL pending

• Totally lead (Pb)-free

• Designed for industrial level

DESCRIPTION

This SOT-227 modules with HEXFRED® rectifier are
available in two basic configurations. They are the
antiparallel and the parallel configurations. The antiparallel
configuration (HFA120EA60) is used for simple series
rectifier and high voltage application. The parallel
configuration (HFA120FA60) is used for simple parallel
rectifier and high current application. The semiconductor in
the SOT-227 package is isolated from the copper base plate,
allowing for common heatsinks and compact assemblies to
be built. These modules are intended for general
applications such as power supplies, battery chargers,
electronic welders, motor control, DC chopper, and inverters.

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS PER LEG

PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS

Cathode to anode voltage V

Continuous forward current I

Single pulse forward current I

Maximum repetitive forward current I

RMS isolation voltage, any terminal to case V

Maximum power dissipation P

Operating junction and storage temperature range T

J

FSM

FRM

ISOL

, T

R

F

D

TC = 25 °C 75

= 100 °C 40

T

C

t = 1 minute 2500 V

TC = 25 °C 180

T

= 100 °C 71

C

Stg

600 V

TBD

180

W

- 55 to 150 °C

A

ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Cathode to anode breakdown voltage V

Maximum forward voltage V

Maximum reverse leakage current I

Junction capacitance C

BR

FM

RM

IR = 100 µA 600 - -

IF = 60 A

I

= 120 A - 1.9 2.1

F

I

= 60 A, TJ = 125 °C - 1.4 1.6

F

VR = VR rated

T

= 125 °C, VR = 0.8 x VR rated - 130 2000

J

VR = 200 V See fig. 3 - 120 170 pF

T

See fig. 1

See fig. 2

-1.51.7

-2.520

V

µA

Document Number: 94049 For technical questions, contact: [e-mail]
Revision: 04-Aug-08 1

www.vishay.com

HFA120FA60P

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 60 A

DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

t

Reverse recovery time
See fig. 5, 6 and 16

Peak recovery current
See fig. 7 and 8

Reverse recovery charge
See fig. 9 and 10

Peak rate of recovery current during t
See fig. 11 and 12

rr

rr1

t

rr2

I

RRM1

I

RRM2

Q

rr1

Q

rr2

dI

(rec)M

b

dI

(rec)M

THERMAL - MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Junction to case, single leg conducting

Junction to case, both legs conducting - - 0.35

Case to sink, flat, greased surface R

Weight - 30 - g

Mounting torque - 1.3 - Nm

IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 34 -

TJ = 25 °C

TJ = 125 °C - 130 200

TJ = 25 °C - 7.0 13

= 60 A

I

TJ = 125 °C - 13 23

TJ = 25 °C - 270 410

TJ = 125 °C - 490 740

/dt1 TJ = 25 °C - 350 -

/dt2 TJ = 125 °C - 270 -

R

thJC

thCS

F

dI

/dt = 200 A/µs

F

V

= 200 V

R

- - 0.70

-0.05-

-6598

°C/W

K/W

nst

A

nC

A/µs

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 04-Aug-08

Document Number: 94049

HFA120FA60P

1000

100

10

- Instantaneous

F

I

Forward Current (A)

1

0 3.01.0

Fig. 1 - Maximum Forward Voltage Drop vs.

Instantaneous Forward Current (Per Leg)

TJ = 150 °C

= 125 °C

T

J

= 25 °C

T

J

0.5 2.0

1.5

2.5

VFM - Forward Voltage Drop (V)

10 000

HEXFRED

®

Ultrafast Soft Recovery

Diode, 60 A

10 000

1000

- Reverse Current (µA)

R

I

Vishay High Power Products

TJ = 150 °C

100

0.1

10

1

0

TJ = 125 °C

TJ = 25 °C

200 600400

VR - Reverse Voltage (V)

Fig. 2 - Typical Reverse Current vs.

Reverse Voltage (Per Leg)

1000

TJ = 25 °C

100

- Junction Capacitance (pF)

T

C

10

1 10 100 1000

VR - Reverse Voltage (V)

Fig. 3 - Typical Junction Capacitance vs. Reverse Voltage (Per Leg)

1

0.1

- Thermal Response

thJC

Z

0.01

0.00001 0.0001 0.001 0.01 0.1

Single pulse

(thermal resistance)

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

Fig. 4 - Maximum Thermal Impedance Z

Characteristics (Per Leg)

thJC

P

DM

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

1/t2

t

1

thJC

t

2

+ T

C

1

Document Number: 94049 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Aug-08 3

HFA120FA60P

Vishay High Power Products

200

VR = 200 V
T

= 125 °C

J

= 25 °C

T

J

160

120

(ns)

rr

t

80

40

100

dIF/dt (A/µs)

Fig. 5 - Typical Reverse Recovery Time vs. dIF/dt (Per Leg)

IF = 120 A

IF = 60 A

IF = 30 A

HEXFRED

®

Ultrafast Soft Recovery

Diode, 60 A

4000

3000

2000

(nC)

rr

Q

1000

1000

VR = 200 V

= 125 °C

T

J

TJ = 25 °C

IF = 120 A

IF = 60 A

IF = 30 A

0

100

dIF/dt (A/µs)

Fig. 7- Typical Stored Charge vs. dI

1000

/dt (Per Leg)

F

100

VR = 200 V
TJ = 125 °C
TJ = 25 °C

IF = 120 A

IF = 60 A

IF = 30 A

10

(A)

rr

I

0

100

dIF/dt (A/µs)

Fig. 6 - Typical Recovery Current vs. dI

1000

/dt (Per Leg)

F

10 000

1000

/dt (A/µs)

(rec)M

dI

100

VR = 200 V
TJ = 125 °C
TJ = 25 °C

IF = 120 A

IF = 60 A
IF = 30 A

100

Fig. 8 - Typical dI

dIF/dt (A/µs)

/dt vs. dIF/dt (Per Leg)

(rec)M

1000

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94049

4 Revision: 04-Aug-08

HFA120FA60P

HEXFRED

Ultrafast Soft Recovery

Diode, 60 A

L = 70 µH

dIF/dt
adjust

G

Fig. 9 - Reverse Recovery Parameter Test Circuit

I

F

0

dIF/dt

(1)

/dt - rate of change of current

(1) dI

F

through zero crossing

(2) I

- peak reverse recovery current

RRM

- reverse recovery time measured

(3) t

rr

from zero crossing point of negative
going I
through 0.75 I
extrapolated to zero current.

to point where a line passing

F

and 0.50 I

RRM

RRM

Fig. 10 - Reverse Recovery Waveform and Definitions

V

= 200 V

R

®

Vishay High Power Products

0.01 Ω

D.U.T.

D

IRFP250

S

(3)

t

rr

t

a

(2)

I

RRM

t

b

(4)

Q

rr

0.5 I

RRM

dI

/dt

(rec)M

0.75 I

RRM

(4) Q

- area under curve defined by t

rr

and I

RRM

trr x I

(5) dI
current during t

=

Q

rr

/dt - peak rate of change of

(rec)M

portion of t

b

(5)

rr

RRM

2

rr

L = 100 µH

I

L(PK)

High-speed

Freewheel

Diode

switch

V

= 50 V

d

+

Decay

time

V

(AVAL)

V

R(RATED)

D.U.T.

Current
monitor

R

g

= 25 Ω

Fig. 11 - Avalanche Test Circuit and Waveforms

Document Number: 94049 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 04-Aug-08 5

HFA120FA60P

Vishay High Power Products

HEXFRED

®

Ultrafast Soft Recovery

Diode, 60 A

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95036

Packaging information http://www.vishay.com/doc?95037

HF A 120 FA 60 P

51324

1 - HEXFRED® family

2 - Process: A electron irradiated

3 - Current rating (120 = 120 A)

4 - Package indicator (SOT-227)

5 - Voltage rating (60 = 600 V)

- P = Lead (Pb)-free

6

LINKS TO RELATED DOCUMENTS

6

www.vishay.com For technical questions, contact: [e-mail]
6 Revision: 04-Aug-08

Document Number: 94049

Legal Disclaimer Notice

Vishay

Notice

The products described herein were acquired by Vishay Intertechnology, Inc., as part of its acquisition of
International Rectifier’s Power Control Systems (PCS) business, which closed in April 2007. Specifications of the
products displayed herein are pending review by Vishay and are subject to the terms and conditions shown below.

Specifications of the products displayed herein are subject to change without notice. Vishay Intertechnology, Inc., or
anyone on its behalf, assumes no responsibility or liability for any errors or inaccuracies.

Information contained herein is intended to provide a product description only. No license, express or implied, by
estoppel or otherwise, to any intellectual property rights is granted by this document. Except as provided in Vishay's
terms and conditions of sale for such products, Vishay assumes no liability whatsoever, and disclaims any express
or implied warranty, relating to sale and/or use of Vishay products including liability or warranties relating to fitness
for a particular purpose, merchantability, or infringement of any patent, copyright, or other intellectual property right.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications.
Customers using or selling these products for use in such applications do so at their own risk and agree to fully
indemnify Vishay for any damages resulting from such improper use or sale.

International Rectifier
are registered trademarks of International Rectifier Corporation in the U.S. and other countries. All other product
names noted herein may be trademarks of their respective owners.

®

, IR®, the IR logo, HEXFET®, HEXSense®, HEXDIP®, DOL®, INTERO®, and POWIRTRAIN

®

Document Number: 99901 www.vishay.com
Revision: 12-Mar-07 1