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HFA120FA60P
Vishay High Power Products
Ultrafast Soft Recovery Diode, 60 A
SOT-227
PRODUCT SUMMARY
V
R
V
(typical) at 125 °C 1.4 V
F
Q
(typical) 270 nC
rr
(typical) 7.0 A
I
RRM
t
(typical) 65 ns
rr
dI
/dt (typical) at 125 °C 270 A/µs
(rec)M
I
at T
F(DC)
C
K2
K1
600 V
40 A at 100 °C
HEXFRED
A2
A1
®
FEATURES
• Fast recovery time characteristic
• Electrically isolated base plate
• Large creepage distance between terminal
• Simplified mechanical designs, rapid assembly
• UL pending
• Totally lead (Pb)-free
• Designed for industrial level
DESCRIPTION
This SOT-227 modules with HEXFRED® rectifier are
available in two basic configurations. They are the
antiparallel and the parallel configurations. The antiparallel
configuration (HFA120EA60) is used for simple series
rectifier and high voltage application. The parallel
configuration (HFA120FA60) is used for simple parallel
rectifier and high current application. The semiconductor in
the SOT-227 package is isolated from the copper base plate,
allowing for common heatsinks and compact assemblies to
be built. These modules are intended for general
applications such as power supplies, battery chargers,
electronic welders, motor control, DC chopper, and inverters.
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS PER LEG
PARAMETER SYMBOL TEST CONDITIONS VALUES UNITS
Cathode to anode voltage V
Continuous forward current I
Single pulse forward current I
Maximum repetitive forward current I
RMS isolation voltage, any terminal to case V
Maximum power dissipation P
Operating junction and storage temperature range T
J
FSM
FRM
ISOL
, T
R
F
D
TC = 25 °C 75
= 100 °C 40
T
C
t = 1 minute 2500 V
TC = 25 °C 180
T
= 100 °C 71
C
Stg
600 V
TBD
180
W
- 55 to 150 °C
A
ELECTRICAL SPECIFICATIONS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Cathode to anode breakdown voltage V
Maximum forward voltage V
Maximum reverse leakage current I
Junction capacitance C
BR
FM
RM
IR = 100 µA 600 - -
IF = 60 A
I
= 120 A - 1.9 2.1
F
I
= 60 A, TJ = 125 °C - 1.4 1.6
F
VR = VR rated
T
= 125 °C, VR = 0.8 x VR rated - 130 2000
J
VR = 200 V See fig. 3 - 120 170 pF
T
See fig. 1
See fig. 2
-1.51.7
-2.520
V
µA
Document Number: 94049 For technical questions, contact: ind-modules@vishay.com
Revision: 04-Aug-08 1
www.vishay.com

HFA120FA60P
Vishay High Power Products
HEXFRED
®
Ultrafast Soft Recovery
Diode, 60 A
DYNAMIC RECOVERY CHARACTERISTICS PER LEG (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
t
Reverse recovery time
See fig. 5, 6 and 16
Peak recovery current
See fig. 7 and 8
Reverse recovery charge
See fig. 9 and 10
Peak rate of recovery current during t
See fig. 11 and 12
rr
rr1
t
rr2
I
RRM1
I
RRM2
Q
rr1
Q
rr2
dI
(rec)M
b
dI
(rec)M
THERMAL - MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction to case, single leg conducting
Junction to case, both legs conducting - - 0.35
Case to sink, flat, greased surface R
Weight - 30 - g
Mounting torque - 1.3 - Nm
IF = 1.0 A, dIF/dt = 200 A/µs, VR = 30 V - 34 -
TJ = 25 °C
TJ = 125 °C - 130 200
TJ = 25 °C - 7.0 13
= 60 A
I
TJ = 125 °C - 13 23
TJ = 25 °C - 270 410
TJ = 125 °C - 490 740
/dt1 TJ = 25 °C - 350 -
/dt2 TJ = 125 °C - 270 -
R
thJC
thCS
F
dI
/dt = 200 A/µs
F
V
= 200 V
R
- - 0.70
-0.05-
-6598
°C/W
K/W
nst
A
nC
A/µs
www.vishay.com For technical questions, contact: ind-modules@vishay.com
2 Revision: 04-Aug-08
Document Number: 94049