C&H Technology GT100NA120U User Manual

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SOT-227

PRODUCT SUMMARY

Target Data 03/09

GT100NA120U

Vishay Semiconductor Italy

SOT 227 TRENCH IGBT, 100 A

High Side Chopper

Features

• Trench IGBT

• Very Low VCE

• 10 μs short circuit capability

• Hexfred clamping diode

• Minimal tail current

• Tighter distribution of parameters

• Higher reliability

• Electronic Power Supplies application

(ON)

I

C(DC)

I

F(DC)

V

CE(on) typ

V

CES

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All currents are
defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted
and still air conditions.

111 A @ 70°C

65 A @ 70°C

2.36 V @ 100 A, 25°C

1200V

Benefits

• Lower conduction losses and switching losses

• Higher switching frequency up to 25 KHz

ABSOLUTE MAXIMUMRATINGS

PARAMETERS VALUES UNITS CONDITIONS

T

J

T

STG

V

ISOL

Diode

V

RRM

I

FM

I

FSM

P

D

Maximum operating junction temperature 150 °C

Storage temperature range -55 to150

RMS isolation voltage, Any terminal to case 2500 V t = 1min, TJ = 25°C

Repetitive peak reverse voltage 1200 V

Continuous forward current 88 A TC = 25°C

60 TC = 80°C

Non repetitive peak surge current 400 A TJ = 25°C, 10 ms

Maximum power dissipation 338 W TC = 25°C

189 TC = 80°C

IGBT

V

CES

V

GES

I

CM

I

LM

I

C

P

D

Revision: 18-Mar-09

Collector to Emitter Voltage 1200 V

Gate to Emitter Voltage 20

Pulse collector current 270 A

Clump inductive load current 270 A

Continuous collector current 148 A TC = 25°C

Maximum power dissipation 521 W TC = 25°C

102 TC = 80°C

292 TC = 80°C

1