C&H Technology GT100NA120U User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

www.chtechnology.com

Phone [phone]

Fax [phone]

1-800-274-4284

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

www.chtechnology.com - SPECIALISTS IN POWER ELECTRONIC COMPONENTS AND ASSEMBLIES - www.chtechnology.com

SOT-227

PRODUCT SUMMARY

Target Data 03/09

GT100NA120U

Vishay Semiconductor Italy

SOT 227 TRENCH IGBT, 100 A

High Side Chopper

Features

• Trench IGBT

• Very Low VCE

• 10 μs short circuit capability

• Hexfred clamping diode

• Minimal tail current

• Tighter distribution of parameters

• Higher reliability

• Electronic Power Supplies application

(ON)

I

C(DC)

I

F(DC)

V

CE(on) typ

V

CES

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All currents are
defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted
and still air conditions.

111 A @ 70°C

65 A @ 70°C

2.36 V @ 100 A, 25°C

1200V

Benefits

• Lower conduction losses and switching losses

• Higher switching frequency up to 25 KHz

ABSOLUTE MAXIMUMRATINGS

PARAMETERS VALUES UNITS CONDITIONS

T

J

T

STG

V

ISOL

Diode

V

RRM

I

FM

I

FSM

P

D

Maximum operating junction temperature 150 °C

Storage temperature range -55 to150

RMS isolation voltage, Any terminal to case 2500 V t = 1min, TJ = 25°C

Repetitive peak reverse voltage 1200 V

Continuous forward current 88 A TC = 25°C

60 TC = 80°C

Non repetitive peak surge current 400 A TJ = 25°C, 10 ms

Maximum power dissipation 338 W TC = 25°C

189 TC = 80°C

IGBT

V

CES

V

GES

I

CM

I

LM

I

C

P

D

Revision: 18-Mar-09

Collector to Emitter Voltage 1200 V

Gate to Emitter Voltage 20

Pulse collector current 270 A

Clump inductive load current 270 A

Continuous collector current 148 A TC = 25°C

Maximum power dissipation 521 W TC = 25°C

102 TC = 80°C

292 TC = 80°C

1

GT100NA120U

Vishay Semiconductor Italy

THERMAL-MECHANICAL SPECIFICATION

PARAMETERS MIN TYP MAX UNITS

R

thCS

Case-to-Sink, flat, greased surface 0.05 °C/ W

T Mounting torque (M3 screw) 1.3 Nm

Wt Weight 30 g

Diode

R

thJC

Junction-to-Case, diode thermal resistance 0.37 °C/ W

IGBT

R

thJC

Junction-to-Case, IGBT thermal resistance 0.24 °C/ W

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (unless otherwise specified)

PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS

Clamping Diode

I

RM

V

FM

IGBT

BV

CES

ΔV

BR(CES)

V

CE(on)

V

GE(th)

ΔV

GE(th)

I

CES

I

GES

Reverse leakage current 10 μA 1200V

0.5 mA 1200V, TJ = 125°C

Forward voltage drop 4.4 V IC = 100A

5.2 IC = 100A, TJ = 125°C

Collector to emitter breakdown volt. 1200 V VGE = 0V, IC = 500μA

/ΔTJTemp. coefficient of breakdown 0.05 V/°C VGE = 0V, IC = 1mA (25°C-150°C)

Collector to emitter voltage 1.79 VGE = 15V, IC = 50A

2.4 V VGE = 15V, IC = 100A

2.0 VGE = 15V, IC = 50A TJ = 125°C

2.7 VGE = 15V, IC = 100A

Gate threshold voltage 5.8 V VCE = VGE, IC = 500μA

/ΔTJTemp.coeff. of threshold voltage -30 mV/°C VCE = VGE, IC = 1mA (25°C-150°C)

Zero gate voltage collector current 10 μAVGE = 0V, VCE = 1200V

100 VGE = 0V, VCE = 1200V, TJ = 125°C

Gate to emitter leakage current ± 200 nALoAVGE = ± 20V

2

Revision 18-Mar-09

SWITCHING CHARACTERISTICS @ TJ = 25°C (unless otherwise specified)

PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS

IGBT Switch

Q

g

Q

ge

Q

gc

E

on

E

off

E

ts

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

RBSOA Reverse Bias safe operating area full square

I

rr

t

rr

Q

rr

Total Gate Charge (turn-on) 400 IC = 100A, VGE = 15V, VCC = 600V
Gate-Emitter Charge (turn-on) 120 nC

Gate-Collector Charge (turn-on) 170

Turn-On Switching Loss 21 IC = 100A

Turn-Off Switching Loss 5.5 mJ VGE = 15V, Rg = 5Ω

Total Switching Loss 26.5 L = 500μH
Turn-On Switching Loss 23.6

Turn-Off Switching Loss 7.6 mJ IC = 100A, VCC = 600V
Total Switching Loss 31.2 VGE = 15V, Rg = 5Ω

Turn-on Delay Time 195 ns L = 50 0μH, TJ = 125°C
Rise Time 280

Turn-off Delay Time 187
Fall Time 225

TJ = 150°C, IC = 270A,
Rg = 22 Ω, VGE = 15 to 0V

Diode

Peak reverse recovery current 11 A TJ = 25°C

18 TJ = 125°C

Reverse recovery time 128 ns TJ = 25°C IF = 50A, VR = 200V

208 T

= 125°C dI/dt = 200A/μs

J

Reverse recovery charge 704 nC TJ = 25°C

1872 TJ = 125°C

GT100NA120U

Vishay Semiconductor Italy

3Revision 18-Mar-09

GT100NA120U

Vishay Semiconductor Italy

OUTLINE TABLE

SOT-227 Package Details

Dimensions are shown in millimeters ( inches )

4.40 (.173 )

4.20 (.165 )

12.50 ( .492 )

7.50 ( .295 )

2.10 ( .082 )

1.90 ( .075 )

4

1

38.30 ( 1.508 )

37.80 ( 1.488 )

-A-

30.20 ( 1.189 )

29.80 ( 1.173 )

4X

3

2

8.10 ( .319 )

7.70 ( .303 )

CHAMFER

2.00 ( .079 ) X 457

6.25 ( .246 )

15.00 ( .5 90 )

2.10 ( .0 82 )

1.90 ( .0 75 )

25.70 ( 1.012 )

25.20 ( .992 )

-B-

4
1

R FULL

0.25 ( .010 ) M C A M B M

-C-

0.12 ( .005 )

LEAD ASSIGMENTS

C

E

G

E

IGBT

A1

K2

3

2

K1 A2

HEXFRED

A

S

4
1

E,K

HEXFET

12.30 ( .484 )

11.80 ( .464 )

C

D

3

2

GS

G

Tube

QUANTITIES PER TUBE IS 10

M4 SREW AND WASHER INCLUDED

4

Revision 18-Mar-09

ORDERING INFORMATION TABLE

Device Code

G T 100 N A 120 U

GT100NA120U

Vishay Semiconductor Italy

1

2 3

1 - Insulated Gate Bipolar Transistor (IGBT)
2 - T = Trench IGBT
3 - Current Rating (100 = 100 A)
4 - Circuit Configuration (N = High Side Chopper)
5 - Package Indicator (A = SOT-227)
6 Voltage Rating (120 = 1200V)
7 - Speed/ Type (U = Ultra Fast IGBT)

4

6

5

7

5Revision 18-Mar-09