C&H Technology GT100DA60U User Manual

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SOT-227

Insulated Gate Bipolar Transistor

PRODUCT SUMMARY

V

CES

I

DC 100 A at 117 °C

C

typical at 100 A, 25 °C 1.72 V

V

CE(on)

I

DC 100 A at 25 °C

F

(Trench IGBT), 100 A

FEATURES

• Trench IGBT technology with positive
temperature coefficient

•Square RBSOA

• 3 μs short circuit capability

®

600 V

•FRED Pt
reverse recovery

•TJ maximum = 175 °C

• Fully isolated package

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

• Speed 4 kHz to 30 kHz

• Lower conduction losses and switching losses

• Low EMI, requires less snubbing

GT100DA60U

Vishay Semiconductors

antiparallel diodes with ultrasoft

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

Note

(1)

Maximum continuous collector current must be limited to 100 A to do not exceed the maximum temperature of terminals

Revision: 24-Oct-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

CES

C

CM

LM

F

FSM

GE

ISOL

TC = 25 °C 184

(1)

T

= 80 °C 137

C

TC = 25 °C 100

T

= 80 °C 71

C

TC = 25 °C 577

D

D

= 117 °C 223

T

C

TC = 25 °C 205

= 117 °C 79

T

C

Any terminal to case, t = 1 min 2500 V

1

, [e-mail], [e-mail]

600 V

350

350

200

± 20 V

Document Number: 93185

A

W

GT100DA60U

www.vishay.com

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

BR(CES)

VGE = 0 V, IC = 250 μA 600 - -

VGE = 15 V, IC = 100 A - 1.72 2.0

Gate threshold voltage V

Temperature coefficient of
threshold voltage

V

GE(th)

Collector to emitter leakage current I

Forward voltage drop V

Gate to emitter leakage current I

CE(on)

GE(th)

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 16.8 - mV/°C

CES

FM

GES

= 15 V, IC = 100 A, TJ = 125 °C - 2.0 2.2

V

GE

VCE = VGE, IC = 250 μA 3.5 4.6 6.5

VGE = 0 V, VCE = 600 V - 0.6 100 μA

= 0 V, VCE = 600 V, TJ = 125 °C - 0.15 3 mA

V

GE

IF = 40 A, VGE = 0 V - 1.78 2.21

= 40 A, VGE = 0 V, TJ = 125 °C - 1.39 1.74

I

F

VGE = ± 20 V - - ± 200 nA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Short circuit safe operating area SCSOA

on

off

tot

on

off

tot

d(on)

d(off)

rr

rr

rr

rr

IC = 100 A, VCC = 360 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH, T

= 25 °C

J

Energy losses
include tail and

IC = 100 A, VCC = 360 V,
V

= 15 V, Rg = 5  

GE

r

f

L = 500 μH, T

= 175 °C, IC = 350 A, Rg = 22 

T

J

V

= 15 V to 0 V, VCC = 400 V,

GE

= 600 V, L = 500 μH

V

P

= 125 °C

J

diode recovery
(see fig. 18)

IF = 50 A, dIF/dt = 200 A/μs, VR = 200 V

rr

IF = 50 A, dIF/dt = 200 A/μs, 
V

= 200 V, TJ = 125 °C

R

rr

= 175 °C, Rg = 22 ,

T

J

V

= 15 V to 0 V, VCC = 400 V,

GE

= 600 V

V

p

Vishay Semiconductors

VCollector to emitter voltage V

V

-0.35-

-2.08-

-2.43-

-0.41-

-2.83-

-3.24-

- 162 -

-55-

- 150 -

- 129 -

Fullsquare

-6185ns

-47A

- 120 297 nC

- 133 154 ns

-1215A

- 750 1150 nC

3μs

mJ

ns

Revision: 24-Oct-12

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 93185

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

GT100DA60U

Allowable Case Temperature (°C)

IC - Continuous Collector Current (A)

0

93185_01

20 40 60 100 140 18080 120 160 200

0

180

160

100

120

140

20

40

60

80

I

C

(A)

VCE (V)

1 10 100 1000

0.01

0.1

1

93185_02

1000

10

100

Allowable Case Temperature (°C)

IF - Continuous Forward Current (A)

80604020 100

120

0

100

160

180

0

40

60

140

80

120

20

93185_04

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THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Junction to case

IGBT

Case to sink per module R

J

R

, T

thJC

thCS

Stg

Mounting torque, 6-32 or M3 screw - - 1.3 Nm

Weight - 30 - g

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

- 40 - 175 °C

- - 0.26

-0.05-

300

275

250

225

200

175

150

(A)

C

I

125

100

75

50

25

0

04.00.5 1.0 1.5 2.0 2.5 3.0 3.5

93185_02

Fig. 3 - Typical IGBT Collector Current Characteristics

Vishay Semiconductors

°C/WDiode - - 0.73

TJ = 125 °C

TJ = 25 °C

V

VCE (V)

= 15 V

GE

TJ = 175 °C

Fig. 2 - IGBT Reverse Bias SOA

Revision: 24-Oct-12

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

T

= 175 °C, VGE = 15 V

J

Case Temperature

3

, [e-mail], [e-mail]

Fig. 4 - Maximum DC Forward Current vs.

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

Document Number: 93185