C&H Technology GBPC35 User Manual
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GBPC...A GBPC...W
PRODUCT SUMMARY
I
O
Vishay High Power Products
Single Phase Bridge
(Power Modules), 25/35 A
FEATURES
• Universal, 3 way terminals: push-on, wrap
around or solder
• High thermal conductivity package, electrically
insulated case
• Positive polarity symbol molded on the plastic case
• Center hole fixing
• Glass passivated diode chips
• Excellent power/volume ratio
• Nickel plated terminals solderable using lead (Pb)-free
solder; Solder Alloy Sn/Ag/Cu (SAC305); Solder
temperature 260 to 275 °C
• Wire lead version available
• UL E300359 approved
• RoHS compliant
• Designed and qualified for industrial and consumer level
25/35 A
DESCRIPTION/APPLICATIONS
A range of extremely compact, encapsulated single phase
bridge rectifiers offering efficient and reliable operation. They
are intended for use in general purpose and instrumentation
applicaions
GBPC.. Series
RoHS
COMPLIANT
MAJOR RATINGS AND CHARACTERISTICS
SYMBOL CHARACTERISTICS GBPC25 GBPC35 UNITS
I
O
I
FSM
2
I
t
V
RRM
T
J
Document Number: 93575 For technical questions, contact: ind-modules@vishay.com
Revision: 29-Sep-08 1
T
C
50 Hz 400 475
60 Hz 420 500
50 Hz 790 1130
60 Hz 725 1030
Range 200 to 1200 V
25 35 A
60 55 °C
A
A2s
- 55 to 150 °C
www.vishay.com
GBPC.. Series
Vishay High Power Products
Single Phase Bridge
(Power Modules), 25/35 A
ELECTRICAL SPECIFICATIONS
VOLTAGE RATINGS
V
, MAXIMUM
TYPE NUMBER
VOLTAGE
CODE
RRM
REPETITIVE PEAK AC
REVERSE VOLTAGE
T
= TJ MAXIMUM
J
V
V
, MAXIMUM NON-REPETITIVE
RSM
PEAK AC REVERSE VOLTAGE
T
= TJ MAXIMUM
J
V
I
MAXIMUM AT
RRM
RATED V
T
= TJ MAXIMUM
J
mA
RRM
02 200 275
04 400 500
(1)
GBPC25/35..A
GBPC25/35..W
06 600 725
08 800 900
2 500
10 1000 1100
12 1200 1300
Note
(1)
See Ordering Information table at the end of datasheet
FORWARD CONDUCTION
PARAMETER SYMBOL TEST CONDITIONS GBPC25 GBPC35 UNITS
Maximum DC output current
at case temperature
Maximum peak, one-cycle
non-repetitive forward current
2
Maximum I
Maximum I
t for fusing I2t
2
√t for fusing I2√tI2t for time tx = I2√t x √tx; 0.1 ≤ tx ≤ 10 ms, V
Low level of threshold voltage V
High level of threshold voltage V
Low level forward slope resistance r
High level forward slope resistance r
Maximum forward voltage drop V
Maximum DC reverse current I
RMS isolation voltage base plate V
I
I
FSM
F(TO)1
F(TO)2
RRM
Resistive or inductive load 25 35
Capacitive load 20 28
O
t = 10 ms
t = 8.3 ms 420 500
t = 10 ms
t = 8.3 ms 350 420
t = 10 ms
t = 8.3 ms 725 1030
t = 10 ms
t = 8.3 ms 512 730
(16.7 % x π x I
(I > π x I
F(AV)
(16.7 % x π x I
t1
(I > π x I
t2
FM
F(AV)
TJ = 25 °C, IFM = I
TJ = 25 °C, per diode at V
f = 50 Hz, t = 1 s 2700 V
INS
60 55 °C
No voltage
400 475
reapplied
100 % V
RRM
335 400
reapplied
No voltage
J
790 1130
= TJ maximum
Initial T
reapplied
100 % V
RRM
560 800
reapplied
= 0 V 7.9 11.3 kA2√s
RRM
F(AV)
< I < π x I
), TJ maximum 0.76 0.77
F(AV)
), TJ maximum 0.89 0.92
F(AV)
< I < π x I
), TJ maximum 8.2 4.852
F(AV)
), TJ maximum 6.8 3.867
Favg (arm)
RRM
1.1 V
5.0 µA
I
RRM
DC REVERSE
CURRENT AT
T
MAXIMUM
= 125 °C
J
µA
A
A
A
V
mΩ
2
s
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 93575
2 Revision: 29-Sep-08
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