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ECONO2 4PACK
PRODUCT SUMMARY
V
CES
I
at TC = 67 °C 75 A
C
V
(typical) 3.4 V
CE(on)
IGBT Fourpack Module, 75 A
FEATURES
•Square RBSOA
•HEXFRED® low Qrr, low switching energy
1200 V
• Positive V
• Copper baseplate
• Low stray inductance design
• Speed 8 kHz to 60 kHz
• Material categorization: For definitions of compliance
please see www.vishay.com/doc?99912
BENEFITS
• Benchmark efficiency for SMPS appreciation in particular
HF welding
• Rugged transient performance
• Low EMI, requires less snubbing
• Direct mounting to heatsink space saving
• PCB solderable terminals
• Low junction to case thermal resistance
temperature coefficient
CE(on)
GB75YF120UT
Vishay Semiconductors
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current
See fig. C.T.5
Clamped inductive load current I
Diode continuous forward current I
Diode maximum forward current I
Gate to emitter voltage V
Maximum power dissipation (IGBT) P
Maximum operating junction temperature T
Storage temperature range T
Isolation voltage V
CES
I
CM
LM
FM
Stg
ISOL
C
F
GE
TC = 25 °C 100
= 80 °C 67
T
C
TC = 25 °C 60
T
= 80 °C 40
C
D
J
TC = 25 °C 480
T
= 80 °C 270
C
1200 V
200
200
150
± 20 V
150
- 40 to + 125
AC 2500 (min) V
A
W
°C
Revision: 21-Mar-13
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
1
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
Document Number: 93172
GB75YF120UT
www.vishay.com
ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Threshold voltage temperature coefficient V
GE(th)
Zero gate voltage collector current I
Diode forward voltage drop V
Gate to emitter leakage current I
BR(CES)
CE(ON)
GE(th)
CES
FM
GES
VGE = 0 V, IC = 500 μA 1200 - -
IC = 75 A, VGE = 15 V - 3.4 4.0
I
= 100 A, VGE = 15 V - 3.8 4.5
C
I
= 75 A, VGE = 15 V, TJ = 125 °C - 4.0 4.5
C
I
= 100 A, VGE = 15 V, TJ = 125 °C - 4.53 5.1
C
VCE = VGE, IC = 250 μA 4.0 5.0 6.0
/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 11 - mV/°C
VGE = 0 V, VCE = 1200 V - 7 250
V
= 0 V, VCE = 1200 V, TJ = 125 °C - 580 2000
GE
IF = 75 A - 3.7 4.9
= 100 A - 4.1 5.5
I
F
I
= 75 A, TJ = 125 °C - 3.7 5.1
F
I
= 100 A, TJ = 125 °C - 4.2 5.7
F
VGE = ± 20 V - - ± 200 nA
Vishay Semiconductors
VCollector to emitter voltage V
μA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Total gate charge (turn-on) Q
Gate to collector charge (turn-on) Q
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
Reverse bias safe operating area RBSOA
Short circuit safe operating area SCSOA
Diode peak reverse recovery current I
Diode reverse recovery time t
Total reverse recovery charge Q
GE
GC
on
off
tot
on
off
tot
d(on)
d(off)
rr
rr
G
IC = 75 A
V
= 600 V
CC
V
= 15 V
GE
IC = 75 A, VCC = 600 V
V
= 15 V, Rg = 5 , L = 500 μH
GE
T
= 25 °C
J
(1)
IC = 75 A, VCC = 600 V
V
= 15 V, Rg = 5 , L = 500 μH
GE
T
= 125 °C
J
r
f
IC = 75 A, VCC = 600 V
V
= 15 V, Rg = 5 , L = 500 μH
GE
T
= 125 °C
J
= 150 °C, IC = 200 A
T
J
R
= 10 , VGE = 15 V to 0 V
g
= 150 °C
T
J
V
= 900 V, VP = 1200 V
CC
R
= 10 , VGE = 15 V to 0 V
g
(1)
TJ = 25 °C
T
= 125 °C - 19 23
J
= 200 V
V
TJ = 25 °C - 132 189
T
= 125 °C - 200 270
J
CC
I
= 50 A
F
dI/dt = 10 A/μs
TJ = 25 °C - 858 1700
rr
T
= 125 °C - 1900 3105
J
Note
(1)
Energy losses include “tail” and diode reverse recovery
Revision: 21-Mar-13
For technical questions within your region: DiodesAmericas@vishay.com
2
, DiodesAsia@vishay.com, DiodesEurope@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
- 630 -
-65-
- 250 -
-1.74-
-1.46-
-3.20-
-2.44-
-2.35-
-4.79-
- 268 -
-43-
- 308 -
- 127 -
Fullsquare
10 - - μs
-1318
Document Number: 93172
nCGate to emitter charge (turn-on) Q
mJ
ns
A
ns
nC
GB75YF120UT
0 20406080100120
0
20
40
60
80
100
120
140
160
IC (A)
T
C
(°C)
0 20406080100120140160
0
100
200
300
400
500
TC (°C)
P
D
(W)
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THERMISTOR ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Resistance R
B value B T
25
T
= 100 °C 468.6 493.3 518
J
= 25 °C/50 °C 3307 3375 3443 °K
J
THERMAL AND MECHANICAL SPECIFICATIONS
PARAMETER SYMBOL MIN. TYP. MAX. UNITS
Junction to case IGBT R
Case to sink, flat, greased surface R
Mounting torque (M5) 2.7 - 3.3 Nm
Weight - 170 - g
(IGBT) - - 0.26
thJC
(DIODE) - - 0.56
thJC
(MODULE) - 0.02 -
thCS
1000
Vishay Semiconductors
4538 5000 5495
°C/WJunction to case DIODE R
Fig. 1 - Maximum DC Collector Current vs.
Case Temperature
Revision: 21-Mar-13
Fig. 2 - Power Dissipation vs. Case Temperature
For technical questions within your region: DiodesAmericas@vishay.com
THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT
ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000
100
10
IC (A)
1
0.1
0.01
1 10 100 1000 10000
VCE (V)
Fig. 3 - Forward SOA
= 25 °C; TJ 150 °C
T
C
1000
100
(A)
C
I
10
1
10 100 1000 10000
VCE (V)
Fig. 4 - Reverse Bias SOA
= 150 °C; VGE = 15 V
T
J
3
Document Number: 93172
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