C&H Technology GB75SA120UP User Manual

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SOT-227

Insulated Gate Bipolar Transistor

PRODUCT SUMMARY

V

CES

DC 75 A at 95 °C

I

C

typical at 75 A, 25 °C 3.3 V

V

CE(on)

(Ultrafast IGBT), 75 A

FEATURES

• NPT Generation V IGBT technology

•Square RBSOA

• Positive V

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance ( 5 nH typical)

• Industry standard outline

• Compliant to RoHS Directive 2002/95/EC

BENEFITS

• Designed for increased operating efficiency in power

1200 V

conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

Vishay Semiconductors

temperature coefficient

CE(on)

GB75SA120UP

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Gate to emitter voltage V

Power dissipation P

Isolation voltage V

CES

C

CM

LM

GE

D

ISOL

TC = 25 °C 131

= 80 °C 89

T

C

TC = 25 °C 658

T

= 80 °C 369

C

Any terminal to case, t = 1 min 2500 V

1200 V

200

200

± 20 V

A

W

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

Collector to emitter leakage current I

Gate to emitter leakage current I

V

GE(th)

BR(CES)

CE(on)

GE(th)

CES

GES

VGE = 0 V, IC = 250 μA 1200 - -

VGE = 15 V, IC = 75 A - 3.3 3.8

= 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9

V

GE

VCE = VGE, IC = 250 μA 4 5 6

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C

VGE = 0 V, VCE = 1200 V - 3 250 μA

= 0 V, VCE = 1200 V, TJ = 150 °C - 4 20 mA

V

GE

VGE = ± 20 V - - ± 200 nA

VCollector to emitter voltage V

Revision: 06-Oct-11

1

For technical questions within your region: [e-mail]

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000

, [e-mail], [e-mail]

Document Number: 93124

GB75SA120UP

www.vishay.com

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

ge

gc

on

off

tot

on

off

tot

d(on)

r

d(off)

g

IC = 50 A, VCC = 600 V, VGE = 15 V

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 

GE

L = 500 μH

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 

f

GE

L = 500 μH, T

= 150 °C, IC = 200 A, Rg = 22 

T

J

V

= 15 V to 0 V, VCC = 900 V,

GE

= 1200 V, L = 500 μH

V

P

= 125 °C

J

Energy losses
include tail and
diode recovery
(see fig. 18)

Vishay Semiconductors

- 690 -

-65-

- 250 -

-1.53-

-1.76-

-3.29-

-2.49-

-3.45-

-5.94-

- 281 -

-45-

- 300 -

- 126 -

Fullsquare

nCGate to emitter charge (turn-on) Q

mJ

ns

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage
temperature range

Junction to case R

Case to sink per module R

Mounting torque, 6-32 or M3 screw - - 1.3 Nm

Weight - 30 - g

, T

T

J

Stg

thJC

thCS

- 40 - 150 °C

- - 0.19

-0.05-

°C/W

Revision: 06-Oct-11

For technical questions within your region: [e-mail]

2

, [e-mail], [e-mail]

Document Number: 93124

THIS DOCUMENT IS SUBJECT TO CHANGE WITHOUT NOTICE. THE PRODUCTS DESCRIBED HEREIN AND THIS DOCUMENT

ARE SUBJECT TO SPECIFIC DISCLAIMERS, SET FORTH AT www.vishay.com/doc?91000