C&H Technology GB75DA120UP User Manual

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Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

FEATURES

• NPT Generation V IGBT technology

• Square RBSOA

®

CE(on)

SOT-227

• HEXFRED

•Positive V

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance (≤ 5 nH typical)

• Industry standard outline

• Compliant to RoHS directive 2002/95/EC

GB75DA120UP

Vishay High Power Products

low Qrr, low switching energy

temperature coefficient

PRODUCT SUMMARY

V

CES

DC 75 A at 95 °C

I

C

typical at 75 A, 25 °C 3.3 V

V

CE(on)

1200 V

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

CES

C

CM

LM

F

GE

D

D

ISOL

TC = 25 °C 131

= 80 °C 89

T

C

TC = 25 °C 59

= 80 °C 39

T

C

TC = 25 °C 658

= 80 °C 369

T

C

TC = 25 °C 240

= 80 °C 135

T

C

Any terminal to case, t = 1 min 2500 V

1200 V

200

200

± 20 V

A

W

Document Number: 93011 For technical questions, contact: [e-mail]
Revision: 23-Apr-09 1

www.vishay.com

GB75DA120UP

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

Collector to emitter leakage current I

Forward voltage drop V

Gate to emitter leakage current I

BR(CES)VGE

CE(on)

GE(th)

V

/ΔTJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C

GE(th)

CES

FM

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

g

ge

gc

on

off

tot

on

off

tot

d(on)

r

d(off)

f

rr

rr

rr

rr

rr

rr

= 0 V, IC = 250 µA 1200 - -

VGE = 15 V, IC = 75 A - 3.3 3.8

= 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9

V

GE

VCE = VGE, IC = 250 µA 4 5 6

VGE = 0 V, VCE = 1200 V - 3 250 µA

= 0 V, VCE = 1200 V, TJ = 150 °C - 4 20 mA

V

GE

IC = 75 A, VGE = 0 V - 3.4 5.0

I

= 75 A, VGE = 0 V, TJ = 125 °C - 3.3 5.2

C

VGE = ± 20 V - - ± 200 nA

- 690 -

IC = 50 A, VCC = 600 V, VGE = 15 V

-65-

- 250 -

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 Ω,

GE

L = 500 µH

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 Ω,

GE

L = 500 µH, T

= 125 °C

J

Energy losses
include tail and
diode recovery
(see fig. 18)

-1.53-

-1.76-

-3.29-

-2.49-

-3.45-

-5.94-

- 281 -

-45-

- 300 -

- 126 -

= 150 °C, IC = 200 A, Rg = 22 Ω,

T

J

= 15 V to 0 V, VCC = 900 V,

V

GE

= 1200 V, L = 500 µH

V

P

Fullsquare

- 142 210 ns

IF = 50 A, dIF/dt = 200 A/µs, VR = 200 V

-1316A

- 923 1680 nC

- 202 260 ns
IF = 50 A, dIF/dt = 200 A/µs,
V

= 200 V, TJ = 125 °C

R

-1822A

- 1818 2860 nC

VCollector to emitter voltage V

V

nCGate to emitter charge (turn-on) Q

mJ

ns

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 93011

2 Revision: 23-Apr-09

GB75DA120UP

Insulated Gate Bipolar Transistor

Vishay High Power Products

(Ultrafast IGBT), 75 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Junction to case

IGBT

Case to sink per module R

, T

J

Stg

R

thJC

thCS

Mounting torque, 6-32 or M3 screw - - 1.3 Nm

Weight -30-g

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

020406080 100 120 140

IC - Continuous Collector Current (A)

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

- 40 - 150 °C

- - 0.19

°C/WDiode - - 0.52

-0.05-

200

150

TJ = 25 °C

100

(A)

C

I

TJ = 125 °C

50

0

0246135

VCE (V)

Fig. 3 - Typical IGBT Collector Current Characteristics

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 10203040506070

IF - Continuous Forward Current (A)

Fig. 4 - Maximum DC Forward Current vs.

Case Temperature

(A)

C

I

1000

100

10

1

10 100 1000 10 000

VCE (V)

Fig. 2 - IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V

J

Document Number: 93011 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 23-Apr-09 3