C&H Technology GB75DA120UP User Manual

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Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

FEATURES

• NPT Generation V IGBT technology

• Square RBSOA

®

CE(on)

SOT-227

• HEXFRED

•Positive V

• Fully isolated package

• Speed 8 kHz to 60 kHz

• Very low internal inductance (≤ 5 nH typical)

• Industry standard outline

• Compliant to RoHS directive 2002/95/EC

GB75DA120UP

Vishay High Power Products

low Qrr, low switching energy

temperature coefficient

PRODUCT SUMMARY

V

CES

DC 75 A at 95 °C

I

C

typical at 75 A, 25 °C 3.3 V

V

CE(on)

1200 V

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting on heatsink

• Plug-in compatible with other SOT-227 packages

• Low EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Power dissipation, IGBT P

Power dissipation, diode P

Isolation voltage V

CES

C

CM

LM

F

GE

D

D

ISOL

TC = 25 °C 131

= 80 °C 89

T

C

TC = 25 °C 59

= 80 °C 39

T

C

TC = 25 °C 658

= 80 °C 369

T

C

TC = 25 °C 240

= 80 °C 135

T

C

Any terminal to case, t = 1 min 2500 V

1200 V

200

200

± 20 V

A

W

Document Number: 93011 For technical questions, contact: [e-mail]
Revision: 23-Apr-09 1

www.vishay.com

GB75DA120UP

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

Collector to emitter leakage current I

Forward voltage drop V

Gate to emitter leakage current I

BR(CES)VGE

CE(on)

GE(th)

V

/ΔTJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 12 - mV/°C

GE(th)

CES

FM

GES

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

g

ge

gc

on

off

tot

on

off

tot

d(on)

r

d(off)

f

rr

rr

rr

rr

rr

rr

= 0 V, IC = 250 µA 1200 - -

VGE = 15 V, IC = 75 A - 3.3 3.8

= 15 V, IC = 75 A, TJ = 125 °C - 3.6 3.9

V

GE

VCE = VGE, IC = 250 µA 4 5 6

VGE = 0 V, VCE = 1200 V - 3 250 µA

= 0 V, VCE = 1200 V, TJ = 150 °C - 4 20 mA

V

GE

IC = 75 A, VGE = 0 V - 3.4 5.0

I

= 75 A, VGE = 0 V, TJ = 125 °C - 3.3 5.2

C

VGE = ± 20 V - - ± 200 nA

- 690 -

IC = 50 A, VCC = 600 V, VGE = 15 V

-65-

- 250 -

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 Ω,

GE

L = 500 µH

IC = 75 A, VCC = 600 V,
V

= 15 V, Rg = 5 Ω,

GE

L = 500 µH, T

= 125 °C

J

Energy losses
include tail and
diode recovery
(see fig. 18)

-1.53-

-1.76-

-3.29-

-2.49-

-3.45-

-5.94-

- 281 -

-45-

- 300 -

- 126 -

= 150 °C, IC = 200 A, Rg = 22 Ω,

T

J

= 15 V to 0 V, VCC = 900 V,

V

GE

= 1200 V, L = 500 µH

V

P

Fullsquare

- 142 210 ns

IF = 50 A, dIF/dt = 200 A/µs, VR = 200 V

-1316A

- 923 1680 nC

- 202 260 ns
IF = 50 A, dIF/dt = 200 A/µs,
V

= 200 V, TJ = 125 °C

R

-1822A

- 1818 2860 nC

VCollector to emitter voltage V

V

nCGate to emitter charge (turn-on) Q

mJ

ns

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Document Number: 93011

2 Revision: 23-Apr-09

GB75DA120UP

Insulated Gate Bipolar Transistor

Vishay High Power Products

(Ultrafast IGBT), 75 A

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Maximum junction and storage temperature range T

Junction to case

IGBT

Case to sink per module R

, T

J

Stg

R

thJC

thCS

Mounting torque, 6-32 or M3 screw - - 1.3 Nm

Weight -30-g

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

020406080 100 120 140

IC - Continuous Collector Current (A)

Fig. 1 - Maximum DC IGBT Collector Current vs.

Case Temperature

- 40 - 150 °C

- - 0.19

°C/WDiode - - 0.52

-0.05-

200

150

TJ = 25 °C

100

(A)

C

I

TJ = 125 °C

50

0

0246135

VCE (V)

Fig. 3 - Typical IGBT Collector Current Characteristics

160

140

120

100

80

60

40

20

Allowable Case Temperature (°C)

0

0 10203040506070

IF - Continuous Forward Current (A)

Fig. 4 - Maximum DC Forward Current vs.

Case Temperature

(A)

C

I

1000

100

10

1

10 100 1000 10 000

VCE (V)

Fig. 2 - IGBT Reverse Bias SOA

T

= 150 °C, VGE = 15 V

J

Document Number: 93011 For technical questions, contact: [e-mail]

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Revision: 23-Apr-09 3

GB75DA120UP

Vishay High Power Products

200

150

100

(A)

F

I

50

0

01 3245

Fig. 5 - Typical Diode Forward Characteristics

10

1

0.1

(mA)

CES

0.01

I

0.001

0.0001
0 200 400 600 800 1000 1200

Fig. 6 - Typical IGBT Zero Gate Voltage Collector Current

TJ = 125 °C

TJ = 125 °C

VFM (V)

V

CES

TJ = 25 °C

TJ = 25 °C

(V)

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

4.5

4.0

3.5

(V)

CE

V

3.0

2.5

2.0
25 50 75 125100 150

Fig. 8 - Typical IGBT Collector to Emitter Voltage vs.

4.0

3.5

3.0

2.5

2.0

1.5

Energy (mJ)

1.0

0.5

Junction Temperature, V

0

10 20 30 50 60 7040 80

Fig. 9 - Typical IGBT Energy Loss vs. I

TJ = 125 °C, L = 500 µH, VCC = 600 V,

100 A

75 A

27 A

TJ (°C)

E

off

IC (A)

R

= 5 Ω, VGE = 15 V

g

E

GE

on

= 15 V

C

(V)

geth

V

6.0

5.5

5.0

4.5

4.0

TJ = 25 °C

TJ = 125 °C

1000

100

t

d(off)

t

d(on)

t

f

t

r

Switching Time (µs)

3.5

3.0

0.0002 0.0004 0.0006 0.0008 0.001

IC (mA)

Fig. 7 - Typical IGBT Threshold Voltage

10

020 6040 80

IC (A)

Fig. 10 - Typical IGBT Switching Time vs. I

TJ = 125 °C, L = 500 µH, VCC = 600 V,

R

= 5 Ω, VGE = 15 V

g

C

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Document Number: 93011

4 Revision: 23-Apr-09

GB75DA120UP

14

12

10

8

6

Energy (mJ)

4

2

0

0 1020304050

Fig. 11 - Typical IGBT Energy Loss vs. R

TJ = 125 °C, IC = 75 A, L = 500 µH,

10 000

1000

100

Switching Time (µs)

10

0203010 40 50

Fig. 12 - Typical IGBT Switching Time vs. R

TJ = 125 °C, L = 500 µH, VCC = 600 V,

Insulated Gate Bipolar Transistor

RG (Ω)

V

= 600 V, VGE = 15 V

CC

t

f

t

r

RG (Ω)

R

= 5 Ω, VGE = 15 V

g

(Ultrafast IGBT), 75 A

E

on

E

off

g

t

d(on)

t

d(off)

g

Vishay High Power Products

250

230

210

190

170

(ns)

rr

150

t

130

110

90

70

100 1000

Fig. 13 - Typical t

40

35

30

25

20

(A)

rr

I

15

10

5

0

100 1000

Fig. 14 - Typical I

V

RR

TJ = 125 °C

TJ = 25 °C

dIF/dt (A/µs)

diode vs. dIF/dt

V

RR

rr

= 200 V, IF = 50 A

TJ = 125 °C

dIF/dt (A/µs)

diode vs. dIF/dt

rr

= 200 V, IF = 50 A

TJ = 25 °C

1

0.1

0.01

- Thermal Impedance

0.001

thJC

Junction to Case (°C/W)

Z

0.0001

0.00001 0.0001 0.001 0.01 0.1

(thermal response)

Single pulse

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

1

Rectangular Pulse Duration (t1)

Fig. 15 - Maximum Thermal Impedance Z

Characteristics (IGBT)

thJC

Document Number: 93011 For technical questions, contact: [e-mail]

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Revision: 23-Apr-09 5

GB75DA120UP

r

Vishay High Power Products

1

0.1

0.01

- Thermal Impedance

thJC

Junction to Case (°C/W)

Z

0.001

0.00001 0.0001 0.001 0.01 0.1

50 V

* Dri

ver same type as D.U.T.; V
* Note: Due to the 50 V power supply, pulse width and inducto
will increase to obtain Id

1000 V

1

Single pulse

(thermal response)

Fig. 16 - Maximum Thermal Impedance Z

L

V

*

C

= 80 % of V

C

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

Rectangular Pulse Duration (t1)

Characteristics (diode)

thJC

D.U.T.

2

ce(max)

1

V

CC

R =

I

CM

+

-

D.U.T.

R

g

V

CC

Fig. 17a - Clamped Inductive Load Test Circuit Fig. 17b - Pulsed Collector Current Test Circuit

Diode clamp/

D.U.T.

-

- 5 V

+

R

g

L

D.U.T./

driver

+

-

V

CC

Fig. 18a - Switching Loss Test Circuit

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Document Number: 93011

6 Revision: 23-Apr-09

ORDERING INFORMATION TABLE

SOT-227 Package Details

Dimensions are shown in millimeters ( inches )

GB75DA120UP

Vishay Semiconductor Italy

4.40 (.173 )

4.20 (.165 )

12.50 ( .492 )

7.50 ( .295 )

2.10 ( .082 )

1.90 ( .075 )

4

1

38.30 ( 1.508 )

37.80 ( 1.488 )

-A-

30.20 ( 1.189 )

29.80 ( 1.173 )

4X

3

2

8.10 ( .319 )

7.70 ( .303 )

CHAMFER

2.00 ( .079 ) X 457

6.25 ( .246 )

15.00 ( .5 90 )

2.10 ( .0 82 )

1.90 ( .0 75 )

25.70 ( 1.012 )

25.20 ( .992 )

-B-

4

1

R FULL

0.25 ( .010 ) M C A M B M

-C-

0.12 ( .005 )

LEAD ASSIGMENTS

C

E

G

E

IGBT

A1

K2

3

2

K1 A2

HEXFRED

S

E

4
1

E

HEXFET

IGBT

12.30 ( .484 )

11.80 ( .464 )

D

C

3

2

GS

G

Tube

QUANTITIES PER TUBE IS 10

M4 SREW AND WASHER INCLUDED

Revision 31-Mar-08

3

GB75DA120UP

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

1

2

3

V

C

90 %

10 %

5 %

I

C

t

d(on)

Fig. 18b - Switching Loss Waveforms Test Circuit

10 %

t

r

E

on

Ets = (Eon + E

90 %

t

d(off)

Vishay High Power Products

t

f

E

off

)

off

t = 5 µs

ORDERING INFORMATION TABLE

Device code

G B 75 D A 120 U P

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - B = IGBT Generation 5

3 - Current rating (75 = 75 A)

4 - Circuit configuration (D = Single switch with antiparallel diode)

5 - Package indicator (A = SOT-227)

6 - Voltage rating (120 = 1200 V)

7 - Speed/type (U = Ultrafast IGBT)

8 - Totally lead (Pb)-free

51324678

Document Number: 93011 For technical questions, contact: [e-mail]

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Revision: 23-Apr-09 7

GB75DA120UP

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Ultrafast IGBT), 75 A

CIRCUIT CONFIGURATION

3 (C)

2 (G)

1, 4 (E)

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95036

Packaging information http://www.vishay.com/doc?95037

www.vishay.com For technical questions, contact: [e-mail]
8 Revision: 23-Apr-09

Document Number: 93011

Legal Disclaimer Notice

Vishay

Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.

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Revision: 18-Jul-08 1