C&H Technology GB70NA60UF User Manual

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SOT-227

PRODUCT SUMMARY

Target Data 03/09

GB70NA60UF

Vishay Semiconductor Italy

SOT 227 WARP 2

High Side Chopper

Features

• Positive temperature coefficient

• Lower VCE (SAT)

• Lower Parasitic Capacitance

• Minimal tail current

• Tighter distribution of parameters

• Higher reliability

• Fred Hyperfast Rectifier

• Consumer electronic Power Supplies application

I

C(DC)

I

F(DC)

V

CE(on) typ

V

CES

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All currents are
defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted
and still air conditions.

70A @ 88°C

70A @ 124°C

2.3V @ 70A, 25°C

600V

Benefits

• Lower Conduction Losses and Switching Losses

• Higher Switching Frequency up to 150KHz

ABSOLUTE MAXIMUMRATINGS

PARAMETERS VALUES UNITS CONDITIONS

T

J

T

STG

V

ISOL

Diode

V

RRM

I

FM

I

FSM

P

D

Maximum operating junction temperature 150 °C

Storage temperature range -55 to150

RMS isolation voltage, Any terminal to case 2500 V t = 1min, TJ = 25°C

Repetitive peak reverse voltage 600 V

Continuous forward current 148 A TC = 25°C

110 TC = 80°C

Non repetitive peak surge current 400 A TJ = 25°C, 10 ms

Maximum power dissipation 277 W TC = 25°C

155 TC = 80°C

IGBT

V

V

I

I

I

P

CES

GES

CM

LM

C

D

Collector to Emitter Voltage 600 V

Gate to Emitter Voltage 20

Pulse collector current 120 A Resistive load circuit, R = VCC/I

Clump inductive load current 120 A V

Continuous collector current 111 A TC = 25°C

Maximum power dissipation 446 W TC = 25°C

Revision: 13-Mar-09

= 480V, Vge = 15V, L = 200μH, Rg = 5Ω

CC

76 TC = 80°C

250 TC = 80°C

CM

1

GB70NA60UF

Vishay Semiconductor Italy

THERMAL-MECHANICAL SPECIFICATION

PARAMETERS MIN TYP MAX UNITS

R

thCS

Case-to-Sink, flat, greased surface 0.05 °C/ W

T Mounting torque (M3 screw) 1.3 Nm

Wt Weight 30 g

Diode

R

thJC

Junction-to-Case, diode thermal resistance 0.45 °C/ W

IGBT

R

thJC

Junction-to-Case, IGBT thermal resistance 0.28 °C/ W

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (unless otherwise specified)

PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS

I

RM

V

FM

IGBT

BV

CES

ΔV

BR(CES)

V

CE(on)

V

GE(th)

ΔV

GE(th)

I

CES

I

GES

/ΔTJTemp.coeff. of threshold voltage 10 mV/°C VCE = VGE, IC = 1mA

Reverse leakage current 0.1 μA 600V

30 600V, TJ = 125°C

Forward voltage drop 2.2 V IC = 70A

1.7 IC = 70A, TJ = 125°C

Collector to emitter breakdown volt. 600 V VGE = 0V, IC = 500μA

/ΔTJTemp. coefficient of breakdown 0.85 V/°C VGE = 0V, IC = 1mA (25°C-125°C)

Collector to emitter voltage 1.72 VGE = 15V, IC = 35A

2.3 V VGE = 15V, IC = 70A

2.1 VGE = 15V, IC = 35A TJ = 125°C

2.95 VGE = 15V, IC = 70A

Gate threshold voltage 4 VCE = VGE, IC = 500μA

Zero gate voltage collector current 6 μAVGE = 0V, VCE = 600V

0.7 mA VGE = 0V, VCE = 600V, TJ = 125°C

Gate to emitter leakage current ± 200 nA VGE = ± 20V

2 Revision 13-Mar-09

SWITCHING CHARACTERISTICS @ TJ = 25°C (unless otherwise specified)

PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS

IGBT Switch

C

ies

C

oes

C

res

Q

g

Q

ge

Q

gc

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

RBSOA Reverse Bias safe operating area full square

C

T

I

rr

t

rr

Q

rr

Input capacitance 7430 VGE = 0V, VCC = 30V
Output capacitance 530 pF f = 1Mhz
Reverse transfer capacitance 94
Total Gate Charge (turn-on) 320 IC = 50A, VGE = 15V, VCC = 400V

Gate-Emitter Charge (turn-on) 42 nC
Gate-Collector Charge (turn-on) 110

Turn-On Switching Loss 1150

Turn-Off Switching Loss 1162 μJIC = 70A, VCC = 360V
Total Switching Loss 2312 VGE = 15V, Rg = 5Ω

Turn-on Delay Time 206 L = 5 0 0μH
Rise Time 68 ns

Turn-off Delay Time 205
Fall Time 100
Turn-On Switching Loss 1265 μJ

Turn-Off Switching Loss 1278 IC = 70A, VCC = 360V
Total Switching Loss 2543 VGE = 15V, Rg = 5Ω

Turn-on Delay Time 208 ns L = 5 00 μH, TJ = 125°C
Rise Time 69

Turn-off Delay Time 208
Fall Time 100

TJ = 150°C, IC = 120A, VCC = 480V
VP = 600V, Rg = 5Ω, VGE = 15 to 0V

DIODE

Total capacitance 66 VR = 600V

Peak reverse recovery current 4 A TJ = 25°C

11 TJ = 125°C

Reverse recovery time 59 ns TJ = 25°C IF = 50A, VR = 200V

130 T

= 125°C dI/dt = 200A/μs

J

Reverse recovery charge 118 nC TJ = 25°C

715 TJ = 125°C

GB70NA60UF

Vishay Semiconductor Italy

Revision 13-Mar-09

3

GB70NA60UF

Vishay Semiconductor Italy

OUTLINE TABLE

SOT-227 Package Details

Dimensions are shown in millimeters ( inches )

4.40 (.173 )

4.20 (.165 )

12.50 ( .492 )

7.50 ( .295 )

2.10 ( .082 )

1.90 ( .075 )

4

1

38.30 ( 1.508 )

37.80 ( 1.488 )

-A-

30.20 ( 1.189 )

29.80 ( 1.173 )

4X

3

2

8.10 ( .319 )

7.70 ( .303 )

CHAMFER

2.00 ( .079 ) X 457

6.25 ( .246 )

15.00 ( .5 90 )

2.10 ( .0 82 )

1.90 ( .0 75 )

25.70 ( 1.012 )

25.20 ( .992 )

-B-

4
1

R FULL

0.25 ( .010 ) M C A M B M

-C-

0.12 ( .005 )

LEAD ASSIGMENTS

C

E

G

E

IGBT

A1

K2

3

2

K1 A2

HEXFRED

A

S

4

1

E,K

HEXFET

12.30 ( .484 )

11.80 ( .464 )

C

D

3

2

GS

G

Tube

QUANTITIES PER TUBE IS 10

M4 SREW AND WASHER INCLUDED

4 Revision 13-Mar-09

ORDERING INFORMATION TABLE

Device Code

G B 70 N A 60 U F

GB70NA60UF

Vishay Semiconductor Italy

1

2 3

1 - Insulated Gate Bipolar Transistor (IGBT)
2 - B = IGBT Gen V
3 - Current Rating (70 = 70A)
4 - Circuit Configuration (N = High Side Chopper)
5 - Package Indicator (A = SOT-227)
6 Voltage Rating (60 = 600V)
7 - Speed/ Type (U = Ultra Fast IGBT)
8 - F = F/W diode fred Pt

4

6

5

8

7

Revision 13-Mar-09

5