C&H Technology GB70LA60UF User Manual

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SOT-227
PRODUCT SUMMARY
Target Data 03/09
GB70LA60UF
Vishay Semiconductor Italy
SOT 227 WARP 2
Low Side Chopper
Features
• Positive temperature coefficient
• Lower VCE (SAT)
• Lower Parasitic Capacitance
• Minimal tail current
• Tighter distribution of parameters
• Higher reliability
• Fred Hyperfast Rectifier
• Consumer electronic Power Supplies application
I
C(DC)
I
F(DC)
V
CE(on) typ
V
CES
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All currents are defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted and still air conditions.
70A @ 88°C
70A @ 124°C
2.3V @ 70A, 25°C
600V
Benefits
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150KHz
ABSOLUTE MAXIMUMRATINGS
PARAMETERS VALUES UNITS CONDITIONS
T
J
T
STG
V
ISOL
Diode
V
RRM
I
FM
I
FSM
P
D
Maximum operating junction temperature 150 °C
Storage temperature range -55 to150
RMS isolation voltage, Any terminal to case 2500 V t = 1min, TJ = 25°C
Repetitive peak reverse voltage 600 V
Continuous forward current 148 A TC = 25°C
110 TC = 80°C
Non repetitive peak surge current 400 A TJ = 25°C, 10 ms
Maximum power dissipation 277 W TC = 25°C
155 TC = 80°C
IGBT
V
V
I
I
I
P
CES
GES
CM
LM
C
D
Collector to Emitter Voltage 600 V
Gate to Emitter Voltage 20
Pulse collector current 120 A Resistive load circuit, R = VCC/I
Clump inductive load current 120 A V
Continuous collector current 111 A TC = 25°C
Maximum power dissipation 446 W TC = 25°C
Revision: 13-Mar-09
= 480V, Vge = 15V, L = 200μH, Rg = 5Ω
CC
76 TC = 80°C
250 TC = 80°C
CM
1
GB70LA60UF
Vishay Semiconductor Italy
THERMAL-MECHANICAL SPECIFICATION
PARAMETERS MIN TYP MAX UNITS
R
thCS
Case-to-Sink, flat, greased surface 0.05 °C/ W
T Mounting torque (M3 screw) 1.3 Nm
Wt Weight 30 g
Diode
R
thJC
Junction-to-Case, diode thermal resistance 0.45 °C/ W
IGBT
R
thJC
Junction-to-Case, IGBT thermal resistance 0.28 °C/ W
ELECTRICAL CHARACTERISTICS @ TJ = 25°C (unless otherwise specified)
PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS
I
RM
V
FM
IGBT
BV
CES
ΔV
BR(CES)
V
CE(on)
V
GE(th)
ΔV
GE(th)
I
CES
I
GES
/ΔTJTemp.coeff. of threshold voltage 10 mV/°C VCE = VGE, IC = 1mA
Reverse leakage current 0.1 μA 600V
30 600V, TJ = 125°C
Forward voltage drop 2.2 V IC = 70A
1.7 IC = 70A, TJ = 125°C
Collector to emitter breakdown volt. 600 V VGE = 0V, IC = 500μA
/ΔTJTemp. coefficient of breakdown 0.85 V/°C VGE = 0V, IC = 1mA (25°C-125°C)
Collector to emitter voltage 1.72 VGE = 15V, IC = 35A
2.3 V VGE = 15V, IC = 70A
2.1 VGE = 15V, IC = 35A TJ = 125°C
2.95 VGE = 15V, IC = 70A
Gate threshold voltage 4 VCE = VGE, IC = 500μA
Zero gate voltage collector current 6 μAVGE = 0V, VCE = 600V
0.7 mA VGE = 0V, VCE = 600V, TJ = 125°C
Gate to emitter leakage current ± 200 nA VGE = ± 20V
2
Revision 13-Mar-09
SWITCHING CHARACTERISTICS @ TJ = 25°C (unless otherwise specified)
PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS
IGBT Switch
C
ies
C
oes
C
res
Q
g
Q
ge
Q
gc
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
E
on
E
off
E
ts
t
d(on)
t
r
t
d(off)
t
f
RBSOA Reverse Bias safe operating area full square
C
T
I
rr
t
rr
Q
rr
Input capacitance 7430 VGE = 0V, VCC = 30V Output capacitance 530 pF f = 1Mhz Reverse transfer capacitance 94 Total Gate Charge (turn-on) 320 IC = 50A, VGE = 15V, VCC = 400V
Gate-Emitter Charge (turn-on) 42 nC Gate-Collector Charge (turn-on) 110
Turn-On Switching Loss 1150
Turn-Off Switching Loss 1162 μJIC = 70A, VCC = 360V Total Switching Loss 2312 VGE = 15V, Rg = 5Ω
Turn-on Delay Time 206 L = 5 0 0μH Rise Time 68 ns
Turn-off Delay Time 205 Fall Time 100 Turn-On Switching Loss 1265 μJ
Turn-Off Switching Loss 1278 IC = 70A, VCC = 360V Total Switching Loss 2543 VGE = 15V, Rg = 5Ω
Turn-on Delay Time 208 ns L = 5 00 μH, TJ = 125°C Rise Time 69
Turn-off Delay Time 208 Fall Time 100
TJ = 150°C, IC = 120A, VCC = 480V VP = 600V, Rg = 5Ω, VGE = 15 to 0V
DIODE
Total capacitance 66 VR = 600V
Peak reverse recovery current 4 A TJ = 25°C
11 TJ = 125°C
Reverse recovery time 59 ns TJ = 25°C IF = 50A, VR = 200V
130 T
= 125°C dI/dt = 200A/μs
J
Reverse recovery charge 118 nC TJ = 25°C
715 TJ = 125°C
GB70LA60UF
Vishay Semiconductor Italy
3Revision 13-Mar-09
GB70LA60UF
Vishay Semiconductor Italy
OUTLINE TABLE
SOT-227 Package Details
Dimensions are shown in millimeters ( inches )
4.40 (.173 )
4.20 (.165 )
12.50 ( .492 )
7.50 ( .295 )
2.10 ( .082 )
1.90 ( .075 )
4
1
38.30 ( 1.508 )
37.80 ( 1.488 )
-A-
30.20 ( 1.189 )
29.80 ( 1.173 )
4X
3
2
8.10 ( .319 )
7.70 ( .303 )
CHAMFER
2.00 ( .079 ) X 457
6.25 ( .246 )
15.00 ( .5 90 )
2.10 ( .0 82 )
1.90 ( .0 75 )
25.70 ( 1.012 )
25.20 ( .992 )
-B-
4 1
R FULL
0.25 ( .010 ) M C A M B M
-C-
0.12 ( .005 )
LEAD ASSIGMENTS
C
E
G
E
IGBT
A1
K2
3
2
K1 A2
HEXFRED
K
S
4
1
E
HEXFET
12.30 ( .484 )
11.80 ( .464 )
C,A
D
3
2
GS
G
Tube
QUANTITIES PER TUBE IS 10
M4 SREW AND WASHER INCLUDED
4
Revision 13-Mar-09
ORDERING INFORMATION TABLE
Device Code
G B 70 L A 60 U F
GB70LA60UF
Vishay Semiconductor Italy
1
2 3
1 - Insulated Gate Bipolar Transistor (IGBT) 2 - B = IGBT Gen V 3 - Current Rating (70 = 70A) 4 - Circuit Configuration (L = Low Side Chopper) 5 - Package Indicator (A = SOT-227) 6 Voltage Rating (60 = 600V) 7 - Speed/ Type (U = Ultra Fast IGBT) 8 - F = F/W diode fred Pt
4 5
6 7 8
5Revision 13-Mar-09
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