C&H Technology GB70LA60UF User Manual

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SOT-227

PRODUCT SUMMARY

Target Data 03/09

GB70LA60UF

Vishay Semiconductor Italy

SOT 227 WARP 2

Low Side Chopper

Features

• Positive temperature coefficient

• Lower VCE (SAT)

• Lower Parasitic Capacitance

• Minimal tail current

• Tighter distribution of parameters

• Higher reliability

• Fred Hyperfast Rectifier

• Consumer electronic Power Supplies application

I

C(DC)

I

F(DC)

V

CE(on) typ

V

CES

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All currents are
defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted
and still air conditions.

70A @ 88°C

70A @ 124°C

2.3V @ 70A, 25°C

600V

Benefits

• Lower Conduction Losses and Switching Losses

• Higher Switching Frequency up to 150KHz

ABSOLUTE MAXIMUMRATINGS

PARAMETERS VALUES UNITS CONDITIONS

T

J

T

STG

V

ISOL

Diode

V

RRM

I

FM

I

FSM

P

D

Maximum operating junction temperature 150 °C

Storage temperature range -55 to150

RMS isolation voltage, Any terminal to case 2500 V t = 1min, TJ = 25°C

Repetitive peak reverse voltage 600 V

Continuous forward current 148 A TC = 25°C

110 TC = 80°C

Non repetitive peak surge current 400 A TJ = 25°C, 10 ms

Maximum power dissipation 277 W TC = 25°C

155 TC = 80°C

IGBT

V

V

I

I

I

P

CES

GES

CM

LM

C

D

Collector to Emitter Voltage 600 V

Gate to Emitter Voltage 20

Pulse collector current 120 A Resistive load circuit, R = VCC/I

Clump inductive load current 120 A V

Continuous collector current 111 A TC = 25°C

Maximum power dissipation 446 W TC = 25°C

Revision: 13-Mar-09

= 480V, Vge = 15V, L = 200μH, Rg = 5Ω

CC

76 TC = 80°C

250 TC = 80°C

CM

1