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SOT-227
PRODUCT SUMMARY
Target Data 03/09
GB70LA60UF
Vishay Semiconductor Italy
SOT 227 WARP 2
Low Side Chopper
Features
• Positive temperature coefficient
• Lower VCE (SAT)
• Lower Parasitic Capacitance
• Minimal tail current
• Tighter distribution of parameters
• Higher reliability
• Fred Hyperfast Rectifier
• Consumer electronic Power Supplies application
I
C(DC)
I
F(DC)
V
CE(on) typ
V
CES
Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All currents are
defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted
and still air conditions.
70A @ 88°C
70A @ 124°C
2.3V @ 70A, 25°C
600V
Benefits
• Lower Conduction Losses and Switching Losses
• Higher Switching Frequency up to 150KHz
ABSOLUTE MAXIMUMRATINGS
PARAMETERSVALUES UNITS CONDITIONS
T
J
T
STG
V
ISOL
Diode
V
RRM
I
FM
I
FSM
P
D
Maximum operating junction temperature150°C
Storage temperature range-55 to150
RMS isolation voltage, Any terminal to case2500Vt = 1min, TJ = 25°C
Repetitive peak reverse voltage600V
Continuous forward current148ATC = 25°C
110TC = 80°C
Non repetitive peak surge current400ATJ = 25°C, 10 ms
Maximum power dissipation277WTC = 25°C
155TC = 80°C
IGBT
V
V
I
I
I
P
CES
GES
CM
LM
C
D
Collector to Emitter Voltage600V
Gate to Emitter Voltage20
Pulse collector current120AResistive load circuit, R = VCC/I
Clump inductive load current120AV
Continuous collector current111ATC = 25°C
Maximum power dissipation446WTC = 25°C
Revision: 13-Mar-09
= 480V, Vge = 15V, L = 200μH, Rg = 5Ω
CC
76TC = 80°C
250TC = 80°C
CM
1
GB70LA60UF
Vishay Semiconductor Italy
THERMAL-MECHANICAL SPECIFICATION
PARAMETERSMINTYPMAX UNITS
R
thCS
Case-to-Sink, flat, greased surface0.05°C/ W
TMounting torque (M3 screw)1.3Nm
WtWeight30g
Diode
R
thJC
Junction-to-Case, diode thermal resistance0.45°C/ W
IGBT
R
thJC
Junction-to-Case, IGBT thermal resistance0.28°C/ W