C&H Technology GB50YF120N User Manual

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ECONO2 4PACK

PRODUCT SUMMARY

V

CES

at TC = 66 °C 50 A

I

C

V

(typical) 3.49 V

CE(on)

Vishay High Power Products

IGBT Fourpack Module, 50 A

FEATURES

• Square RBSOA

®

low Qrr, low switching energy

temperature coefficient

CE(on)

1200 V

• HEXFRED

•Positive V

• Copper baseplate

• Low stray inductance design

• Operating frequencies 8 to 60 kHz

• Designed and qualified for industrial market

BENEFITS

• Benchmark efficiency for SMPS appreciation in particular
HF welding

• Rugged transient performance

• Low EMI, requires less snubbing

• Direct mounting to heatsink space saving

• PCB solderable terminals

• Low junction to case thermal resistance

GB50YF120N

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Diode maximum forward current I

Gate to emitter voltage V

Maximum power dissipation (IGBT) P

Maximum operating junction temperature T

Storage temperature range T

Isolation voltage V

CES

C

CM

LM

F

FM

GE

D

J

Stg

ISOL

TC = 25 °C 66

T

= 80 °C 44

C

See fig. C.T.5 150

TC = 25 °C 40

T

= 80 °C 25

C

TC = 25 °C 330

T

= 80 °C 180

C

1200 V

150

150

± 20 V

150

- 40 to + 125

AC 2500 (MIN) V

A

W

°C

Document Number: 93653 For technical questions, contact: [e-mail]
Revision: 29-May-08 1

www.vishay.com

GB50YF120N

Vishay High Power Products

IGBT Fourpack Module, 50 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage BV

Gate threshold voltage V

Threshold voltage temperature coefficient ΔV

GE(th)

Zero gate voltage collector current I

Diode forward voltage drop V

Gate to emitter leakage current I

(CES)

CE(ON)

GE(th)

CES

FM

GES

VGE = 0 V, IC = 500 µA 1200 - -

IC = 50 A, VGE = 15 V - 3.49 3.9

I

= 75 A, VGE = 15 V - 4.15 4.5

C

I

= 50 A, VGE = 15 V, TJ = 125 °C - 4.16 4.5

C

= 75 A, VGE = 15 V, TJ = 125 °C - 4.97 5.4

I

C

VCE = VGE, IC = 250 µA 4.0 4.9 6.0

/ΔTJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C

VGE = 0 V, VCE = 1200 V - 11 250

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 600 1000

GE

IF = 50 A - 3.30 4.5

= 75 A - 3.90 5.0

I

F

I

= 50 A, TJ = 125 °C - 3.6 4.8

F

I

= 75 A, TJ = 125 °C - 4.37 5.5

F

VGE = ± 20 V - - ± 200 nA

VCollector to emitter voltage V

µA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

Diode peak reverse recovery current I

Diode reverse recovery time t

Total reverse recovery charge Q

Note

(1)

Energy losses include “tail” and diode reverse recovery

GE

GC

on

off

tot

on

off

tot

d(on)

d(off)

rr

rr

G

IC = 50 A

= 600 V

V

CC

= 15 V

V

GE

IC = 50 A, VCC = 600 V

= 15 V, RG = 4.7 Ω, L = 500 µH

V

GE

T

= 25 °C

J

(1)

IC = 50 A, VCC = 600 V

= 15 V, RG = 4.7 Ω, L = 500 µH

V

GE

T

= 125 °C

J

r

f

IC = 50 A, VCC = 600 V
V

GE

= 125 °C

T

J

= 150 °C, IC = 150 A

T

J

R

= 10 Ω, VGE = 15 V to 0 V

G

= 150 °C

T

J

V

CC

R

= 10 Ω, VGE = 15 V to 0 V

G

(1)

= 15 V, RG = 4.7 Ω, L = 500 µH

= 900 V, VP = 1200 V

TJ = 25 °C

T

= 125 °C - 2.0 3

J

TJ = 25 °C - 0.453 0.49

T

= 125 °C - 0.74 0.82

J

= 600 V

V

CC

I

= 50 A

F

dI/dt = 7 A/µs

TJ = 25 °C - 0.12 0.3

rr

T

= 125 °C - 0.4 1.5

J

www.vishay.com For technical questions, contact: [e-mail]
2 Revision: 29-May-08

- 400 -

-43-

nCGate to emitter charge (turn-on) Q

- 187 -

-0.93-

-1.20-

-2.13-

-1.68-

mJ

-1.77-

-3.46-

- 128 -

-56-

- 292 -

ns

- 134 -

Fullsquare

10 - - µs

-1.32.3

µs

µC

Document Number: 93653

A