C&H Technology GB50LA120UX User Manual

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SOT-227

PRODUCT SUMMARY

Target Data 03/08

GB50LA120UX

Vishay Semiconductor Italy

SOT 227 ULTRAFAST

Low Side Chopper

Features

• Positive temperature coefficient

• Lower VCE (SAT)

• Lower Parasitic Capacitance

• Minimal tail current

• Tighter distribution of parameters

• Higher reliability

• Consumer electronic Power Supplies application

I

C(DC)

I

F(DC)

V

CE(on) typ

V

CES

Absolute Maximum Ratings indicate sustained limits beyond which damage to the device may occur. All currents are
defined positive into any lead. The Thermal Resistance and Power Dissipation ratings are measured under board mounted
and still air conditions.

50A @ 88°C

50A @ 81°C

3.25V @ 50A, 25°C

1200V

Benefits

• Lower Conduction Losses and Switching Losses

• Higher Switching Frequency up to 150KHz

ABSOLUTE MAXIMUMRATINGS

PARAMETERS VALUES UNITS CONDITIONS

T

J

T

STG

V

ISOL

Diode

V

RRM

I

FM

I

FSM

P

D

Maximum operating junction temperature 150 °C

Storage temperature range -55 to150

RMS isolation voltage, Any terminal to case 2500 V t = 1min, TJ = 25°C

Repetitive peak reverse voltage 1200 V

Continuous forward current 75 A TC = 25°C

51 TC = 80°C

Non repetitive peak surge current 400 A TJ = 25°C, 10 ms

Maximum power dissipation 272 W TC = 25°C

152 TC = 80°C

IGBT

V

CES

V

GES

I

CM

I

LM

I

C

P

D

Revision: 21-Mar-08

Collector to Emitter Voltage 1200 V

Gate to Emitter Voltage 20

Pulse collector current 150 A Resistive load circuit, R = VCC/I

Clump inductive load current 150 A

Continuous collector current 80 A TC = 25°C

Maximum power dissipation 403 W TC = 25°C

CM

54 TC = 80°C

226 TC = 80°C

1

GB50LA120UX

Vishay Semiconductor Italy

THERMAL-MECHANICAL SPECIFICATION

PARAMETERS MIN TYP MAX UNITS

R

thCS

Case-to-Sink, flat, greased surface 0.05 °C/ W

T Mounting torque (M3 screw) 1.3 Nm

Wt Weight 30 g

Diode

R

thJC

Junction-to-Case, diode thermal resistance 0.46 °C/ W

IGBT

R

thJC

Junction-to-Case, IGBT thermal resistance 0.31 °C/ W

ELECTRICAL CHARACTERISTICS @ TJ = 25°C (unless otherwise specified)

PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS

I

RM

V

FM

IGBT

BV

CES

ΔV

BR(CES)

V

CE(on)

V

GE(th)

ΔV

GE(th)

I

CES

I

GES

/ΔTJTemp.coeff. of threshold voltage 10 mV/°C VCE = VGE, IC = 1mA

Reverse leakage current 5 μA 1200V

10 mA 1200V, TJ = 125°C

Forward voltage drop 2.6 V IC = 50A

2.7 IC = 50A, TJ = 125°C

Collector to emitter breakdown volt. 1200 V VGE = 0V, IC = 500μA

/ΔTJTemp. coefficient of breakdown 1.5 V/°C VGE = 0V, IC = 1mA (25°C-125°C)

Collector to emitter voltage 2.5 VGE = 15V, IC = 25A

3.25 V VGE = 15V, IC = 50A

2.85 VGE = 15V, IC = 25A TJ = 125°C

3.8 VGE = 15V, IC = 50A

Gate threshold voltage 5 V VCE = VGE, IC = 500μA

Zero gate voltage collector current 10 μAVGE = 0V, VCE = 1200V

0.6 mA VGE = 0V, VCE = 1200V, TJ = 125°C

Gate to emitter leakage current ± 200 nA VGE = ± 20V

2

Revision 21-Mar-08

SWITCHING CHARACTERISTICS @ TJ = 25°C (unless otherwise specified)

PARAMETERS MIN TYP MAX UNITS TEST CONDITIONS

IGBT Switch

Q

g

Q

ge

Q

gc

E

on

E

off

E

ts

E

on

E

off

E

ts

t

d(on)

t

r

t

d(off)

t

f

RBSOA Reverse Bias safe operating area full square

Total Gate Charge (turn-on) 400 IC = 50A, VGE = 15V, VCC = 600V
Gate-Emitter Charge (turn-on) 43 nC

Gate-Collector Charge (turn-on) 187

Turn-On Switching Loss 2718 IC = 50A, VCC = 600V

Turn-Off Switching Loss 1104 μJVGE = 15V, Rg = 5Ω

Total Switching Loss 3922 L = 5 00 μH
Turn-On Switching Loss 3934 μJ

Turn-Off Switching Loss 2312 IC = 50A, VCC = 600V
Total Switching Loss 6246 VGE = 15V, Rg = 5Ω

Turn-on Delay Time 191 ns L = 50 0μH, TJ = 125°C
Rise Time 53

Turn-off Delay Time 223
Fall Time 143

TJ = 150°C, IC = 150A,
Rg = 5Ω, VGE = 15 to 0V

GB50LA120UX

Vishay Semiconductor Italy

DIODE

I

rr

Peak reverse recovery current 11 A TJ = 25°C

18 TJ = 125°C

t

rr

Q

rr

Reverse recovery time 128 ns TJ = 25°C IF = 50A, VR = 200V

208 T

= 125°C dI/dt = 200A/μs

J

Reverse recovery charge 704 nC TJ = 25°C

1872 TJ = 125°C

3Revision 21-Mar-08

GB50LA120UX

Vishay Semiconductor Italy

OUTLINE TABLE

SOT-227 Package Details

Dimensions are shown in millimeters ( inches )

4.40 (.173 )

4.20 (.165 )

12.50 ( .492 )

7.50 ( .295 )

2.10 ( .082 )

1.90 ( .075 )

4

1

38.30 ( 1.508 )

37.80 ( 1.488 )

-A-

30.20 ( 1.189 )

29.80 ( 1.173 )

4X

3

2

8.10 ( .319 )

7.70 ( .303 )

CHAMFER

2.00 ( .079 ) X 457

6.25 ( .246 )

15.00 ( .5 90 )

2.10 ( .0 82 )

1.90 ( .0 75 )

25.70 ( 1.012 )

25.20 ( .992 )

-B-

4
1

R FULL

0.25 ( .010 ) M C A M B M

-C-

0.12 ( .005 )

LEAD ASSIGMENTS

C

E

G

E

IGBT

A1

K2

3

2

K1 A2

HEXFRED

C, A G

S

4

1

K

HEXFET

12.30 ( .484 )

11.80 ( .464 )

D

3

2

GS

E

Tube

QUANTITIES PER TUBE IS 10

M4 SREW AND WASHER INCLUDED

4

Revision 21-Mar-08

ORDERING INFORMATION TABLE

Device Code

G B 50 L A 120 U X

GB50LA120UX

Vishay Semiconductor Italy

1

2 3

1 - Insulated Gate Bipolar Transistor (IGBT)
2 - B = IGBT Gen V
3 - Current Rating (50 = 50A)
4 - Circuit Configuration ( L = Low Side Chopper)
5 - Package Indicator (A = SOT-227)
6 Voltage Rating (120 = 1200V)
7 - Speed/ Type (U = Ultra Fast IGBT)
8 - X = F/W diode Hexfred Pt

4 5

6 7 8

5Revision 21-Mar-08