C&H Technology GB200TS60NPbF User Manual

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INT-A-PAK

Vishay High Power Products

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT), 209 A

FEATURES

• Generation 5 Non Punch Through (NPT)
technology

• Ultrafast: Optimized for hard switching operating
frequencies 8 to 60 kHz

•Low V

• 10 µs short circuit capability

• Square RBSOA

•Positive V

• HEXFRED

• Industry standard package

•Al2O3 DBC

• UL pending

• Designed for industrial level and lead (Pb)-free

CE(on)

temperature coefficient

CE(on)

®

antiparallel diode with ultrasoft reverse

recovery characteristics

GB200TS60NPbF

RoHS

COMPLIANT

PRODUCT SUMMARY

V

CES

DC 209 A

I

C

at 100 A, 25 °C 2.6 V

V

CE(on)

600 V

BENEFITS

• Benchmark efficiency for UPS and welding application

• Rugged transient performance

• Direct mounting on heatsink

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Maximum power dissipation P

Isolation voltage V

CES

C

CM

LM

F

GE

D

ISOL

TC = 25 °C 209

= 80 °C 142

T

C

TC = 25 °C 178

= 80 °C 121

T

C

TC = 25 °C 781

T

= 80 °C 438

C

Any terminal to case, t = 1 min 2500 V

600 V

400

400

± 20 V

A

W

Document Number: 94503 For technical questions, contact: [e-mail]
Revision: 07-May-08 1

www.vishay.com

GB200TS60NPbF

Vishay High Power Products

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT),

209 A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Collector to emitter leakage current I

Diode forward voltage drop V

Gate to emitter leakage current I

BR(CES)VGE

CE(on)

GE(th)

CES

FM

GES

= 0 V, IC = 500 µA 600 - -

VGE = 15 V, IC = 100 A - 1.95 2.1

= 15 V, IC = 200 A - 2.6 2.84

V

GE

= 15 V, IC = 100 A, TJ = 125 °C - 2.28 2.5

V

GE

= 15 V, IC = 200 A, TJ = 125 °C - 3.14 3.48

V

GE

VCE = VGE, IC = 500 µA 3 4.2 6

VGE = 0 V, VCE = 600 V - 0.005 0.2

V

= 0 V, VCE = 600 V, TJ = 150 °C - 0.01 15

GE

IC = 100 A - 1.39 1.78

= 200 A - 1.64 2.2

I

C

= 100 A, TJ = 125 °C - 1.32 1.69

I

C

= 200 A, TJ = 125 °C - 1.67 2.30

I

C

VGE = ± 20 V - - ± 200 nA

VCollector to emitter voltage V

mA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

on

off

tot

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

IC = 200 A, VCC = 360 V, VGE = 15 V,
R

= 10 Ω, L = 200 µH

G

IC = 200 A, VCC = 360 V, VGE = 15 V,

= 10 Ω, L = 200 µH, TJ = 125 °C

R

G

= 150 °C, IC = 400 A,

T

J

= 27 Ω, VGE = 15 V to 0

R

G

T

= 150 °C, VCC = 400 V, VP = 600 V,

J

R

= 27 Ω, VGE = 15 V to 0

G

IF = 50 A, dIF/dt = 200 A/µs,
V

= 400 V, TJ = 25 °C

CC

IF = 50 A, dIF/dt = 200 A/µs,
V

= 400 V, TJ = 125 °C

CC

-3.65-

-6.9-

- 10.55 -

-3.8-

mJ

-7.8-

- 11.6 -

- 507 -

- 133 -

- 538 -

ns

-92-

Fullsquare

10 - -

- 226 260 ns

-1720A

- 1900 2600 nC

- 290 330 ns

-2530A

- 3600 5000 nC

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94503

2 Revision: 07-May-08

GB200TS60NPbF

INT-A-PAK "Half-Bridge"

Vishay High Power Products

(Ultrafast Speed IGBT), 209 A

THERMAL - MECHANICAL CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

Operating junction and storage temperature range T

Junction to case per leg

IGBT

Case to sink per module R

Mounting torque

case to heatsink - - 4

case to terminal 1, 2, 3 - - 3

, T

J

Stg

R

thJC

thCS

Weight - 185 - g

300

Vge = 18V

Vge = 15V

250

Vge = 12V

200

- 40 - 150 °C

-0.130.16

°C/WDiode - 0.19 0.32

-0.1-

Nm

300

250

200

150

(A)

cE

I

100

50

0

01234

Vge = 9V

VCE(V)

Fig. 1 - Typical IGBT Output Characteristics

T

= 25 °C, tp = 500 µs

J

300

Vge = 18V
Vge = 15V

250

Vge = 12V

200

150

(A)

cE

I

100

50

0

012345

Vge = 9V

VCE(V)

Fig. 2 - Typical IGBT Output Characteristics

T

= 125 °C, tp = 500 µs

J

150

(A)

cE

I

100

50

Tj = 125°C

Tj = 25°C

0

0123456789

VGE(V)

Fig. 3 - Typical Transfer Characteristics

V

= 20 V, tp = 500 µs

CE

3.5

3

2.5

2

1.5

, Collector -to-Emitter Voltage (V)

CE

V

1

04080120160

TJ, Junction Temperature (°C)

Ic = 200A

Ic = 100A

Ic = 50A

Fig. 4 - Typical Collector to Emitter Voltage vs.

Junction Temperature

Document Number: 94503 For technical questions, contact: [e-mail]

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Revision: 07-May-08 3

GB200TS60NPbF

Vishay High Power Products

200

150

100

(A)

F

I

50

0

160

140

120

100

80

60

, Case Temperature (°C)

40

C

T

20

0

Tj = 125°C

Tj = 25°C

0.00.51.01.52.0

VF(V)

Fig. 5 - Diode Forward Characteristics,

t

= 500 µs

p

DC

0 50 100 150 200 250

Maximum DC Collector Current (A)

Fig. 6 - Maximum Collector Current vs.

Case Temperature

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT),

209 A

Switching Time (ns)

1000

td(off)

td(on)

tf

100

tr

10

40 60 80 100 120 140 160 180 200 220

IC (A)

Fig. 8 - Typical Switching Time vs. I

TJ = 125 °C, L = 200 µH, VCC = 360 V,

R

= 10 Ω, VGE = 15 V

G

13000

12000

11000

10000

9000

8000

7000

Energy (mJ)

6000

5000

4000

3000

5 101520253035404550

Eoff

Eon

RG ( Ω)

Fig. 9 - Typical Energy Loss vs. R

TJ = 125 °C, L = 200 µH, VCC = 360 V,

I

= 200 A, VGE = 15 V

CE

C

G

8000

7000

6000

5000

4000

3000

Energy (mJ)

2000

1000

0

50 100 150 200

Eoff

IC (A)

Fig. 7 - Typical Energy Loss vs. I

TJ = 125 °C, L = 200 µH, VCC = 360 V,

R

= 10 Ω, VGE = 15 V

G

Eon

C

10000

1000

td(off)

td(on)

tr

100

Energy Time (ns)

tf

10

0 1020304050

RG ( Ω)

Fig. 10 - Typical Switching Time vs. R

TJ = 125 °C, L = 200 µH, VCC = 360 V,

I

= 200 A, VGE = 15 V

CE

G

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Document Number: 94503

4 Revision: 07-May-08

GB200TS60NPbF

100

90

80

70

60

(A)

RR

I

50

40

30

20

40 80 120 160 200

10 ohm

IF(A)

Fig. 11 - Typical Diode IRR vs. I

TJ = 125 °C

100

90

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT), 209 A

27 ohm

47 ohm

Total Switching Losses (mJ)

F

Fig. 14 - Typical Switching Losses vs. Gate Resistance

Vishay High Power Products

26
25
24

23
22

21
20
19
18

17
16
15

14
13

12
11

5 101520253035404550

RG ( Ω)

T

= 125 °C, L = 200 µH, RG = 10 Ω,

J

V

= 360 V, VGE = 15 V

CC

100

80

70

(A)

RR

I

60

50

40

30

0 1020304050

RG ( Ω)

Fig. 12 - Typical Diode I

TJ = 125 °C, IF = 200 A

100

90

80

(A)

RR

I

70

60

50

600 700 800 900 1000 1100 1200 1300

RR

vs. R

dIF/ dt (A/μs)

Fig. 13 - Typical Diode I

T

= 125 °C, VCC = 360 V, IF = 200 A, VGE = 15 V

J

vs. dIF/dt

RR

Ic = 200A

10

Ic = 100A

Ic = 50A

Total Switching Losses (mJ)

1

0255075100125

TJ - Junction Temperature (°C)

G

Fig. 15 - Typical Switching Losses vs.

Junction Temperature;

L = 200 µH, R

12

11

10

9

8

7

6

5

4

Total Switching Losses (mJ)

3

2

40 60 80 100 120 140 160 180 200 220

= 10 Ω, VCC = 360 V, VGE = 15 V

G

IC(A)

Fig. 16 - Typical Switching Losses vs.

Collector to Emitter Current;

T

= 125 °C,RG1 = 10 Ω, RG2 = 0 Ω, VCC = 360 V, VGE = 15 V

J

Document Number: 94503 For technical questions, contact: [e-mail]

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Revision: 07-May-08 5

GB200TS60NPbF

Vishay High Power Products

1

)

thJC

D = 0.5

0.1

D = 0.2

D = 0.1

D = 0.05

0.01
D = 0.02

Thermal response (Z

)

thJC

Thermal response (Z

D = 0.01

0.001
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

1

D = 0.5

0.1
D = 0.2

D = 0.1

D = 0.05

D = 0.02

0.01
D = 0.01

0.001
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT),

209 A

Notes:

Single Pulse

(Thermal Response)

t1, Rectangular Pulse Duration (sec)

Single Pulse

(Thermal Response)

t1, Rectangular Pulse Duration (sec)

1. Duty Factor D = t1/t2

2. Peak Tj = Pdm x ZthJC + Tc

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = Pdm x ZthJC + Tc

®

)

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94503

6 Revision: 07-May-08

GB200TS60NPbF

(Ultrafast Speed IGBT), 209 A

ORDERING INFORMATION TABLE

Device code

G B 200 T S 60 N PbF

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - B = IGBT Generation 5 NPT

3 - Current rating (200 = 200 A)

4 - Circuit configuration (T = Half-bridge)

5 - Package indicator (S = INT-A-PAK)

6 - Voltage rating (60 = 600 V)

7 - Speed/type (N = Ultrafast IGBT)

8 - Lead (Pb)-free

INT-A-PAK "Half-Bridge"

51324678

Vishay High Power Products

CIRCUIT CONFIGURATION

3

6

7

1

4

5

2

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95173

Document Number: 94503 For technical questions, contact: [e-mail]
Revision: 07-May-08 7

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Disclaimer

All product specifications and data are subject to change without notice.

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(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1