C&H Technology GB15XP120KTPbF User Manual

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Suite 108
Minnetonka, MN 55345

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED

MTP

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 2.51 V

V

CE(on)

at TC = 100 °C 15 A

I

C

at TJ = 150 °C > 10 μs

t

sc

1200 V

GB15XP120KTPbF

Vishay Semiconductors

®

Diodes, 15 A

FEATURES

• Generation 5 NPT 1200 V IGBT technology

•HEXFRED
recovery

• Very low conduction and switching losses

• Optional SMT thermistor (NTC)

• Aluminum oxide DBC

• Very low stray inductance design for high speed operation

• Short circuit 10 μs

• Square RBSOA

• Operating frequencies 8 kHz to 60 kHz

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for inverter motor drive applications

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

®

diode with ultrasoft reverse

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation
(including diode and IGBT)

Document Number: 93913 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]

CES

C

CM

LM

F

FM

GE

ISOL

P

TC = 25 °C 30

= 100 °C 15

T

C

TC = 100 °C 15

Any terminal to case, t = 1 min 2500

TC = 25 °C 187

D

T

= 100 °C 75

C

, [e-mail], [e-mail] 1

1200 V

60

60

30

± 20

A

V

W

GB15XP120KTPbF

Vishay Semiconductors

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 15 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coefficient of V

(BR)CES

V

(BR)CES

(BR)CES

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

V

GE(th)

Forward transconductance g

Collector to emitter leaking current I

Diode forward voltage drop V

Gate to emitter leakage current I

CE(on)

GE(th)

fe

CES

FM

GES

VGE = 0 V, IC = 250 μA 1200 - - V

/TJVGE = 0 V, IC = 1 mA - 1.11 - V/°C

VGE = 15 V, IC = 15 A - 2.51 2.70

V

= 15 V, IC = 30 A - 3.36 3.66

GE

= 15 V, IC = 15 A, TJ = 125 °C - 2.94 3.16

V

GE

= 15 V, IC = 30 A, TJ = 125 °C - 4.12 4.46

V

GE

IC = 250 μA 4 - 6

/TJVCE = VGE, IC = 1 mA - - 10 - mV/°C

VCE = 25 V, IC = 15 A - 12 - S

VGE = 0 V, VCE = 1200 V - - 250

V

= 0 V, VCE = 1200 V, TJ = 125 °C - - 1000

GE

IF = 15 A, VGE = 0 V - 2.13 2.58

= 30 A, VGE = 0 V - 2.70 3.33

I

F

= 15 A, VGE = 0 V, TJ = 125 °C - 2.27 2.75

I

F

= 30 A, VGE = 0 V, TJ = 125 °C - 3.06 3.76

I

F

VGE = ± 20 V - - ± 250 nA

V

μA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Reverse BIAS safe operating area RBSOA

Short circuit safe operating area SCSOA

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery energy E

Diode reverse recovery time t

Diode peak reverse current I

ge

gc

on

off

on

off

d(on)

d(off)

ies

oes

res

rec

rr

rr

g

IC = 15 A

= 600 V

V

CC

V

= 15 V

GE

IC = 15 A, VCC = 600 V, VGE = 15 V
R

= 10 , L = 500 μH, TJ = 25 °C

g

Energy losses include tail and

ts

diode reverse recovery

IC = 15 A, VCC = 600 V, VGE = 15 V

= 10 , L = 500 μH, TJ = 125 °C

R

g

Energy losses include tail and

ts

r

f

diode reverse recovery

IC = 15 A, VCC = 600 V, VGE = 15 V
L = 500 μH, L
R

= 10 , TJ = 125 °C

g

= 150 °C, IC = 60 A

T

J

= 10 , VGE = 15 V to 0

R

g

= 600 V, VGE = + 15 V to 0

V

CC

T

= 150 °C, VP = 1200 V, Rg = 10 

J

= 100 nH

S

VGE = 0 V

= 30 V

V

CC

f = 1 MHz

IC = 15 A, VCC = 600 V, VGE = 15 V
L = 500 μH, L

= 10 , TJ = 125 °C

R

g

= 100 nH

S

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93913
2 [e-mail]

, [e-mail], [e-mail] Revision: 03-Aug-10

- 98 146

-1217

nCGate to emitter charge (turn-on) Q

-4669

- 0.990 1.485

- 0.827 1.241

mJTurn-off switching loss E

- 1.817 2.726

- 1.352 2.028

- 1.138 1.707

mJTurn-off switching loss E

- 2.490 3.735

- 95 143

-1827

- 134 200

ns

- 227 341

Fullsquare

10 - - μs

- 1302 1953

- 717 1076

pFOutput capacitance C

-3857

- 819 - μJ

-96-ns

-35- A

R

0

R

1

-------



1

T

0

------

1

T

1

------

–





exp=

0246

0

20

40

60

Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V

Vce (V)

Ice (A)

0246

0

20

40

60

Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V

Vce (V)

Ice (A)

GB15XP120KTPbF

Three Phase Inverter Module in MTP Package

Vishay Semiconductors

1200 V NPT IGBT and HEXFRED® Diodes, 15 A

THERMISTOR SPECIFICATIONS (T CODE ONLY)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Resistance R

Sensitivity index of the
thermistor material

0

(1)(2)



Notes

(1)

T0, T1 are thermistor´s temperatures

(2)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction
temperature range

Storage temperature range T

IGBT

Junction to case

Diode --1.7

Module -0.50-

Case to sink per module R

Mounting torque --4Nm

Weight -65- g

T

J

Stg

R

thJC

thCS

T0 = 25 °C - 30 - k

T0 = 25 °C
T

= 85 °C

1

-4000- K

- 40 - 150
°C

- 40 - 125

--1.1

°C/W

Heatsink compound thermal conductivity = 1 W/mK - 0.1 -

Fig. 1 - Typical Output Characteristics

T

= 25 °C

J

Document Number: 93913 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]

Fig. 2 - Typical Output Characteristics

TJ = 125 °C

, [e-mail], [e-mail] 3

GB15XP120KTPbF

5101520

0

5

10

15

20

I

ce=7.5A

I

ce=15A

I

ce=30A

Vge (V)

Vce (V)

5101520

0

5

10

15

20

I

ce=7.5A

I

ce=15A

I

ce=30A

Vge (V)

Vce (V)

Ic (A)

Energy (mJ)

5152535

500

1500

2500

3500

4500

E

TOT

E

ON

E

OFF

Rg ( )

Energy (mJ)

0 1020304050

0

1

2

3

4

E

TOT

E

OFF

E

ON

0 1020304050

10

100

1000

Rg ( )

Swiching Time (ns)

t

F

td

OFF

td

ON

t

R

Vishay Semiconductors

Fig. 3 - Typical VCE vs. V

TJ = 25 °C

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 15 A

1000

t

F

td

OFF

100

td

ON

10

t

R

Swiching Time (ns)

1

5 1015202530

Ic (A)

GE

Fig. 6 - Typical Switching Time vs. I
TJ = 125 °C, L = 500 μH, VCE = 600 V

R

= 10 ; VGE = 15 V

g

C

Fig. 4 - Typical V

TJ = 125 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93913
4 [e-mail]

Fig. 5 - Typical Energy Loss vs. I

TJ = 125 °C, L = 500 μH, VCE = 600 V

R

= 10 ; VGE = 15 V

g

CE

vs. V

GE

Fig. 7 - Typical Energy Loss vs. R

TJ = 125 °C, L = 500 μH, VCE = 600 V

I

= 15 A; VGE = 15 V

C

C

Fig. 8 - Typical Switching Time vs. R

TJ = 125 °C, L = 500 μH, VCE = 600 V

I

= 15 A; VGE = 15 V

C

g

g

, [e-mail], [e-mail] Revision: 03-Aug-10

0 10203040

10

100

1000

10000

Vce (V)

Capacitance (pF)

Cies

Coes

Cres

QG, Total Gate Charge (nC)

0 20 40 60 80 100

0

4

8

12

16

600V

V

GE

(V)

0 40 80 120 160

0

8

16

24

32

Ic (A)

Tc (°C)

04080120160

0

30

60

90

120

Tc (°C)

Ptot (W)

1 10 100 1000 10000

0.01

0.1

1

10

100

Vce (V)

Ic (A)

20 µs

100 µs

1 ms

DC

10 ms

10 100 1000 10000

1

10

100

Vce (V)

Ic (A)

GB15XP120KTPbF

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 15 A

Fig. 9 - Typical Capacitance vs. V

VGE = 0 V; f = 1 MHz

CE

Vishay Semiconductors

Fig. 12 - Power Dissipation vs. Case Temperature

(IGBT only)

Fig. 10 - Typical Gate Charge vs. V

Fig. 11 - Maximum DC Collector Current vs.

Document Number: 93913 For technical questions within your region, please contact one of the following: www.vishay.com

Case Temperature

Revision: 03-Aug-10 [e-mail]

ICE = 15 A

GE

Fig. 13 - Forward SOA

T

= 25 °C, TJ  150 °C

C

Fig. 14 - Reverse BIAS SOA

T

= 150 °C, VGE = 15 V

J

, [e-mail], [e-mail] 5

GB15XP120KTPbF

0 4 8 12 16

0

40

80

120

160

Vge (V)

Ice (A)

Tj = 25°C
Tj = 125°C

0 1020304050

15

20

25

30

35

40

45

Rg ( )

Irr (A)

Vishay Semiconductors

Fig. 15 - Typical Transfer Characteristics

50

40

V

= 50 V; tp = 10 μs

CE

Tj = 25°C
Tj = 125°C

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 15 A

55

45

35

Irr (A)

25

15

5

5101520253035

Fig. 17 - Typical Diode I

Rg=4.7

If (A)

TJ = 125 °C

Ω

Rg=

Ω

10

Rg=

22Ω

Rg=47

Ω

vs. I

rr

F

30

If (A)

20

10

0

01234

Vf (V)

Fig. 16 - Typical Diode Forward Characteristics

t

= 80 μs

p

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93913
6 [e-mail]

45

40

35

30

Irr (A)

25

20

15

400 550 700 850 1000 1150 1300

dif/dt (A/µs)

Fig. 19 - Typical Diode I

V

= 15 V; ICE = 10 A, TJ = 125 °C

GE

vs. dIF/dt; VCC = 600 V;

rr

, [e-mail], [e-mail] Revision: 03-Aug-10

Fig. 18 - Typical Diode I

TJ = 125 °C; IF = 10 A

vs. R

rr

g

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

0.001

0.01

0.1

1

10

SINGLE PULSE
(THERMAL RESPONSE)

0.5

0.3

0.1

0.05

0.02

0.01

Ri (°C/W)

0.196

0.515

0.389

τ

i (sec)

0.000547

0.025615

0.037176

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + tc

t1 , Rectangular Pulse Duration (sec)

Thermal Response (Zth

JC

)

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

Ci= τi/Ri

τ

GB15XP120KTPbF

Three Phase Inverter Module in MTP Package

Vishay Semiconductors

1200 V NPT IGBT and HEXFRED® Diodes, 15 A

Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

10

)

JC

1

0.5

0.3

0.1

0.1

0.05

0.02

0.01

0.01

Thermal Response (Zth

SINGLE PULSE
(THERMAL RESPONSE)

0.001
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

t1 , Rectangular Pulse Duration (sec)

Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (Diode)

J

τ

1

τ

Ci= τi/Ri

R

R

1

R

1

R

2

3

R

1

2

τ

2

τ

2

Ri (°C/W)

R

3

τ

0.390

3

1.023

τ

3

0.287

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + tc

τ

0.001245

0.03327

0.052639

i (sec)

Document Number: 93913 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]

, [e-mail], [e-mail] 7

GB15XP120KTPbF

13

7

1

2

8

9

5

6

10

3

4

11

12

Vishay Semiconductors

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 15 A

ORDERING INFORMATION TABLE

Device code

CIRCUIT CONFIGURATION

GB 15 XP 120 K T PbF

1 - IGBT module

2

3

4

5

6

7

51324

67

- Nominal current rating (15 = 15 A)

- Circuit configuration (XP = Three phase inverter)

- Voltage code (120 = 1200 V)

- Speed/type (K = Ultrafast IGBT/inverter motor drive application)

- Special option:

None = No special option

T = Thermistor

- PbF = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95175

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93913
8 [e-mail]

, [e-mail], [e-mail] Revision: 03-Aug-10

DIMENSIONS in millimeters

Ø 1.1Ø 5

3.5

33

31.8

12 ± 0.5

4

20.5

2.5

876543

2

1

13

9

10 11

12

1.8

8.1

45°

5.4 ± 0.1

5.7 ± 0.1

1.2 ± 0.1

7.2 ± 0.1

7.8 ± 0.1

3 ± 0.1

27.5

11.35

± 0.1

11.35

± 0.1

R2.6 (x 3)

R5.8 (x 2)

8.7 ± 0.1

6 ± 0.1

3 ± 0.1

8.5 ± 0.1

39.5 ± 0.1

44.5

48.7

63.5 ± 0.25

1.3

Outline Dimensions

Vishay Semiconductors

MTP

Note

• Unused terminals are not assembled in the package

Document Number: 95175 For technical questions, contact: [e-mail]
Revision: 18-Mar-08 1

www.vishay.com

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Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
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Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
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Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000