C&H Technology GB150TS60NPbF User Manual
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INT-A-PAK
PRODUCT SUMMARY
V
CES
DC 138 A
I
C
at 150 A, 25 °C 2.64 V
V
CE(on)
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT), 138 A
FEATURES
• Generation 5 Non Punch Through (NPT)
technology
• Ultrafast: Optimized for hard switching operating
frequencies 8 to 60 kHz
•Low V
• 10 µs short circuit capability
• Square RBSOA
•Positive V
• HEXFRED
• Industry standard package
•Al2O3 DBC
• UL pending
• Designed for industrial level and lead (Pb)-free
600 V
BENEFITS
• Benchmark efficiency for UPS and welding application
• Rugged transient performance
• Direct mounting on heatsink
• Very low junction to case thermal resistance
CE(on)
temperature coefficient
CE(on)
®
antiparallel diode with ultrasoft reverse
recovery characteristics
GB150TS60NPbF
RoHS
COMPLIANT
ABSOLUTE MAXIMUM RATINGS
PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS
Collector to emitter voltage V
Continuous collector current I
Pulsed collector current I
Clamped inductive load current I
Diode continuous forward current I
Gate to emitter voltage V
Maximum power dissipation P
Isolation voltage V
Document Number: 94502 For technical questions, contact: ind-modules@vishay.com
Revision: 07-May-08 1
CES
C
CM
LM
F
GE
D
ISOL
TC = 25 °C 138
= 80 °C 93
T
C
TC = 25 °C 178
= 80 °C 121
T
C
TC = 25 °C 500
T
= 80 °C 280
C
Any terminal to case, t = 1 min 2500 V
600 V
300
300
± 20 V
www.vishay.com
A
W
GB150TS60NPbF
Vishay High Power Products
INT-A-PAK "Half-Bridge"
(Ultrafast Speed IGBT),
138 A
ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Collector to emitter breakdown voltage V
Gate threshold voltage V
Collector to emitter leakage current I
Diode forward voltage drop V
Gate to emitter leakage current I
BR(CES)VGE
CE(on)
GE(th)
CES
FM
GES
= 0 V, IC = 500 µA 600 - -
VGE = 15 V, IC = 100 A - 2.2 2.7
= 15 V, IC = 150 A - 2.64 3
V
GE
= 15 V, IC = 100 A, TJ = 125 °C - 2.68 3.11
V
GE
= 15 V, IC = 150 A, TJ = 125 °C - 3.25 3.79
V
GE
VCE = VGE, IC = 500 µA 3 4.2 6
VGE = 0 V, VCE = 600 V - 0.01 0.2
V
= 0 V, VCE = 600 V, TJ = 150 °C - 7.5 15
GE
IC = 100 A - 1.39 1.78
= 150 A - 1.52 1.91
I
C
= 100 A, TJ = 125 °C - 1.31 1.72
I
C
= 150 A, TJ = 125 °C - 1.49 2.05
I
C
VGE = ± 20 V - - ± 200 nA
VCollector to emitter voltage V
mA
V
SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)
PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on switching loss E
Turn-off switching loss E
Total switching loss E
Turn-on delay time t
Rise time t
Turn-off delay time t
Fall time t
on
off
tot
on
off
tot
d(on)
r
d(off)
f
Reverse bias safe operating area RBSOA
Short circuit safe operating area SCSOA
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
Diode reverse recovery time t
Diode peak reverse current I
Diode recovery charge Q
rr
rr
rr
rr
rr
rr
IC = 150 A, VCC = 360 V, VGE = 15 V,
R
= 10 Ω, L = 200 µH
G
IC = 150 A, VCC = 360 V, VGE = 15 V,
= 10 Ω, L = 200 µH, TJ = 125 °C
R
G
= 150 °C, IC = 300 A,
T
J
= 10 Ω, VGE = 15 V to 0
R
G
T
= 150 °C, VCC = 400 V, VP = 600 V,
J
R
= 10 Ω, VGE = 15 V to 0
G
IF = 50 A, dIF/dt = 200 A/µs,
V
= 400 V, TJ = 25 °C
CC
IF = 50 A, dIF/dt = 200 A/µs,
V
= 400 V, TJ = 125 °C
CC
-2.0-
-3.9-
-5.9-
-2.42-
mJ
-4.2-
-6.62-
- 390 -
- 100 -
- 402 -
ns
-80-
Fullsquare
10 - -
- 226 260 ns
-1720A
- 1900 2600 nC
- 290 330 ns
-2530A
- 3600 5000 nC
www.vishay.com For technical questions, contact: ind-modules@vishay.com
Document Number: 94502
2 Revision: 07-May-08
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