C&H Technology GB100TS60NPbF User Manual

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INT-A-PAK

PRODUCT SUMMARY

V

CES

DC 108 A

I

C

at 100 A, 25 °C 2.6 V

V

CE(on)

Vishay High Power Products

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT), 108 A

FEATURES

• Generation 5 Non Punch Through (NPT)
technology

• Ultrafast: Optimized for hard switching operating
frequencies 8 to 60 kHz

600 V

•Low V

• 10 µs short circuit capability

• Square RBSOA

•Positive V

• HEXFRED

• Industry standard package

•Al

• UL pending

• Designed for industrial level and lead (Pb)-free

BENEFITS

• Benchmark efficiency for UPS and welding application

• Rugged transient performance

• Direct mounting on heatsink

• Very low junction to case thermal resistance

CE(on)

temperature coefficient

CE(on)

®

antiparallel diode with ultrasoft reverse

recovery characteristics

DBC

2O3

GB100TS60NPbF

RoHS

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Clamped inductive load current I

Diode continuous forward current I

Gate to emitter voltage V

Maximum power dissipation P

Isolation voltage V

Document Number: 94501 For technical questions, contact: [e-mail]
Revision: 07-May-08 1

CES

C

CM

LM

F

GE

D

ISOL

TC = 25 °C 108

= 80 °C 74

T

C

TC = 25 °C 106

= 80 °C 69

T

C

TC = 25 °C 390

T

= 80 °C 219

C

Any terminal to case, t = 1 min 2500 V

600 V

200

200

± 20 V

www.vishay.com

A

W

GB100TS60NPbF

Vishay High Power Products

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT),

108 A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Collector to emitter leakage current I

Diode forward voltage drop V

Gate to emitter leakage current I

BR(CES)VGE

CE(on)

GE(th)

CES

FM

GES

= 0 V, IC = 500 µA 600 - -

VGE = 15 V, IC = 50 A - 1.95 2.1

= 15 V, IC = 100 A - 2.6 2.85

V

GE

= 15 V, IC = 50 A, TJ = 125 °C - 2.21 2.44

V

GE

= 15 V, IC = 100 A, TJ = 125 °C - 3.05 3.38

V

GE

VCE = VGE, IC = 500 µA 3 4.6 6

VGE = 0 V, VCE = 600 V - 0.01 0.1

V

= 0 V, VCE = 600 V, TJ = 150 °C - 3.7 10

GE

IC = 50 A - 1.35 1.66

= 100 A - 1.57 1.96

I

C

= 50 A, TJ = 125 °C - 1.27 1.50

I

C

= 100 A, TJ = 125 °C - 1.57 1.89

I

C

VGE = ± 20 V - - ± 200 nA

VCollector to emitter voltage V

mA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on switching loss E

Turn-off switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

on

off

tot

on

off

tot

d(on)

r

d(off)

f

Reverse bias safe operating area RBSOA

Short circuit safe operating area SCSOA

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

rr

rr

rr

rr

rr

rr

IC = 100 A, VCC = 360 V, VGE = 15 V,
R

= 4.7 Ω, L = 200 µH

G

IC = 100 A, VCC = 360 V, VGE = 15 V,

= 4.7 Ω, L = 200 µH, TJ = 125 °C

R

G

= 150 °C, IC = 200 A,

T

J

R

= 27 Ω, VGE = 15 V to 0

G

= 150 °C, VCC = 400 V, VP = 600 V,

T

J

= 27 Ω, VGE = 15 V to 0

R

G

IF = 50 A, dIF/dt = 200 A/µs,
V

= 400 V, TJ = 25 °C

CC

IF = 50 A, dIF/dt = 200 A/µs,

= 400 V, TJ = 125 °C

V

CC

-0.6-

-1.1-

-1.7-

-0.8-

mJ

-1.3-

-2.1-

- 197 -

-50-

- 225 -

ns

-72-

Fullsquare

10 - -

- 116 140 ns

-1115A

- 600 1050 nC

- 152 190 ns

-1620A

- 1215 1900 nC

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94501

2 Revision: 07-May-08

GB100TS60NPbF

INT-A-PAK "Half-Bridge"

Vishay High Power Products

(Ultrafast Speed IGBT),

108 A

THERMAL - MECHANICAL CHARACTERISTICS

PARAMETER SYMBOL MIN. TYP. MAX. UNITS

R

J

, T

thJC

thCS

Stg

Operating junction and storage temperature range T

Junction to case per leg

IGBT

Case to sink per module R

Mounting torque

case to heatsink - - 4

case to terminal 1, 2, 3 - - 3

Weight - 185 - g

200

Vge = 18V
Vge = 15V
Vge = 12V

150

100

(A)

cE

I

50

0

0123456

Vge = 9V

VCE(V)

Fig. 1 - Typical IGBT Output Characteristics

T

= 25 °C, tp = 500 µs

J

- 40 - 150 °C

- 0.23 0.32

°C/WDiode - 0.38 0.64

-0.1-

Nm

200

180

160

140

120

100

(A)

cE

I

80

60

40

20

0

0246810

Tj = 125°C

Tj = 25°C

VGE(V)

Fig. 3 - Typical Transfer Characteristics

V

= 20 V, tp = 500 µs

CE

200

Vge = 18V
Vge = 15V
Vge = 12V

150

(A)

100

cE

I

50

0

0123456

Vge = 9V

VCE(V)

Fig. 2 - Typical IGBT Output Characteristics

T

= 125 °C, tp = 500 µs

J

5

4.5

4

3.5

3

2.5

, Collector -to-Emitter Voltage (V)

2

CE

V

1.5
0 20406080100120140160

TJ, Junction Temperature (°C)

Ic = 200A

Ic = 100A

Ic = 50A

Fig. 4 - Typical Collector to Emitter Voltage vs.

Junction Temperature,

V

= 15 V, 500 µs pulse width

GE

Document Number: 94501 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 07-May-08 3

GB100TS60NPbF

Vishay High Power Products

200

150

100

(A)

F

I

50

Tj = 125°C

Tj = 25°C

0

0.0 0.5 1.0 1.5 2.0

Fig. 5 - Diode Forward Characteristics, tp = 500 µs

160

140

120

100

80

60

, Case Temperature (°C)

40

C

T

20

0

0 20 40 60 80 100 120

Maximum DC Collector Current (A)

Fig. 6 - Maximum Collector Current vs.

VF(V)

DC

Case Temperature

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT),

108 A

Switching Time (ns)

1000

td(off)

td(on)

100

tf

tr

10

20 40 60 80 100

I (A)

Fig. 8 - Typical Switching Time vs. I

TJ = 125 °C, L = 200 µH, VCC = 360 V,

R

= 4.7 Ω, VGE = 15 V

G

5000

4500

4000

3500

3000

2500

2000

Energy (mJ)

1500

1000

500

0

0 1020304050

Eon

Eoff

RG ( Ω)

Fig. 9 - Typical Energy Loss vs. R

TJ = 125 °C, L = 200 µH, VCC = 360 V,

I

= 100 A, VGE = 15 V

CE

C

G

1400

1200

1000

800

600

Eoff

Energy (mJ)

400

200

0

0 20406080100120

IC (A)

Fig. 7 - Typical Energy Loss vs. I

L = 200 µH, V

= 360 V, RG = 4.7 Ω, VGE = 15 V

CC

Eon

, TJ = 125 °C,

C

1000

td(off)

td(on)

100

tf

Energy Time (ns)

10

0 1020304050

tr

RG ( Ω)

Fig. 10 - Typical Switching Time vs. R

TJ = 125 °C, L = 200 µH, VCC = 360 V,

I

= 100 A, VGE = 15 V

CE

G

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94501

4 Revision: 07-May-08

GB100TS60NPbF

100

90

80

70

60

50

(A)

RR

I

40

30

20

10

0

020406080100120

4.7 ohm

27 ohm

47 ohm

IF(A)

Fig. 11 - Typical Diode IRR vs. IF,

T

= 125 °C

J

100

80

60

(A)

RR

I

40

20

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT),

108 A

Total Switching Losses (mJ)

Fig. 14 - Typical Switching Losses vs. Gate Resistance,

Total Switching Losses (mJ)

Vishay High Power Products

9

8

7

6

5

4

3

2

1

0 1020304050

RG ( Ω)

T

= 125 °C, L = 200 µH, RG = 10 Ω,

J

V

= 360 V, VGE = 15 V

CC

10

Ic = 100A

1

Ic = 50A

Ic = 25A

0

0 1020304050

RG ( Ω)

Fig. 12 - Typical Diode I

T

= 125 °C, IF = 100 A

J

90

80

70

(A)

RR

I

60

50

600 800 1000 1200 1400 1600 1800

vs. RG,

RR

dIF/ dt (A/μs)

Fig. 13 - Typical Diode I

T

= 125 °C, VCC = 360 V, IF = 150 A, VGE = 15 V

J

vs. dIF/dt,

RR

0.1
0 255075100125

TJ - Junction Temperature (°C)

Fig. 15 - Typical Switching Losses vs. Junction Temperature,

L = 200 µH, R

2.5

2

1.5

1

0.5

Total Switching Losses (mJ)

0

20 40 60 80 100

= 10 Ω, VCC = 360 V, VGE = 15 V

G

IC(A)

Fig. 16 - Typical Switching Losses vs.

Collector to Emitter Current,

T

= 125 °C, RG1 = 4.7 V, RG2 = 0 Ω, VCC = 360 V, VGE = 15 V

J

Document Number: 94501 For technical questions, contact: [e-mail]

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Revision: 07-May-08 5

GB100TS60NPbF

Vishay High Power Products

1

)

thJC

Thermal response (Z

0.001

)

thJC

Thermal response (Z

0.001

D = 0.5

0.1

D = 0.2

D = 0.1

D = 0.05

D = 0.02

0.01
D = 0.01

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00 1E+01

Fig. 17 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

1

D = 0.5

D = 0.2

0.1
D = 0.1

D = 0.05

D = 0.02
D = 0.01

0.01

(Thermal Response)

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

Fig. 18 - Maximum Transient Thermal Impedance, Junction to Case (HEXFRED

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT),

108 A

Single Pulse

(Thermal Response)

t1, Rectangular Pulse Duration (sec)

Single Pulse

t1, Rectangular Pulse Duration (sec)

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = Pdm x ZthJC + Tc

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = Pdm x ZthJC + Tc

®

)

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Document Number: 94501

6 Revision: 07-May-08

GB100TS60NPbF

ORDERING INFORMATION TABLE

Device code

G B 100 T S 60 N PbF

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - B = IGBT Generation 5 NPT

3 - Current rating (100 = 100 A)

4 - Circuit configuration (T = Half-bridge)

5 - Package indicator (S = INT-A-PAK)

6 - Voltage rating (60 = 600 V)

7 - Speed/type (N = Ultrafast IGBT)

8 - Lead (Pb)-free

CIRCUIT CONFIGURATION

INT-A-PAK "Half-Bridge"

(Ultrafast Speed IGBT),

108 A

51324678

Vishay High Power Products

3

6

7

1

4

5

2

LINKS TO RELATED DOCUMENTS

Dimensions http://www.vishay.com/doc?95173

Document Number: 94501 For technical questions, contact: [e-mail]
Revision: 07-May-08 7

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Legal Disclaimer Notice

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Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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from such use or sale. Please contact authorized Vishay personnel to obtain written terms and conditions regarding
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1