C&H Technology GB100DA60UP User Manual

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GB100DA60UP

Vishay Semiconductor Italy

IINSULATED GATE BIPOLAR TRANSISTOR

Warp2 Speed IGBT

FEATURES

• NPT Warp2 Speed IGBT Technology
with Positive Temperature Coefficient

• Hexfred Antiparallel Diodes with UltraSoft
Reverse Recovery

• Fully isolated package (2,500 volt AC)

• Very low internal inductance (5 nH typ.)

• Industry standard outline

• TOTALLY LEAD-FREE

SOT-227

PRODUCT SUMMARY

V

CES

V

CE(on) typ

I

C(DC)

I

F(DC)

2.4V @ 100A, 25°C

600V

100A @ 61°C

100A @ 85°C

ABSOLUTE MAXIMUM RATINGS

PARAMETERS MAX UNITS

V

I

I

I

I

I

V

P

CES

C

CM

LM

F

FM

GE

D

Collector-to-Emitter Voltage 600 V

Continuos Collector Current @ TC = 25°C 125 A

Pulsed Collector Current 300

Clamped Inductive Load Current 300

Diode Continuos Forward Current @ TC = 25°C 160

Peak Diode Forward Current 200

Gate-to-Emitter Voltage ± 20 V

Maximum Power Dissipation, IGBT @ TC = 25°C 447 W

BENEFITS

• Designed for increased operating efficiency in

power conversion: UPS, SMPS, Welding,
Induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227

packages

• Higher Switching Frequency up to 150kHz

• Lower Conduction Losses and Switching Losses

• Low EMI, requires Less Snubbing

@ TC = 80°C 85

@ TC = 80°C 105

@ TC = 80°C 250

P

D

V

ISOL

28-Mar-08

Maximum Power Dissipation, Diode @ TC = 25°C 313 W

@ TC = 80°C 175

Isolation Voltage, Any Terminal to Case, t = 1 min 2500 V

1