C&H Technology GB05XP120KTPbF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

Phone [phone]

Fax [phone]

[phone]

Thank you for downloading this document from C&H Technology, Inc.

Please contact the C&H Technology team for the following questions -

Technical

Application

Assembly

Availability

Pricing

Phone – 1-800-274-4284

E-Mail – [e-mail]

C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED

MTP

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 2.90 V

V

CE(on)

at TC = 100 °C 5 A

I

C

at TJ = 150 °C > 10 μs

t

sc

1200 V

GB05XP120KTPbF

Vishay Semiconductors

®

Diodes, 5 A

FEATURES

• Generation 5 NPT 1200 V IGBT technology

•HEXFRED® diode with ultrasoft reverse
recovery

• Very low conduction and switching losses

• Optional SMT thermistor (NTC)

• Aluminum oxide DBC

• Very low stray inductance design for high speed operation

• Short circuit 10 μs

• Square RBSOA

• Operating frequencies 8 kHz to 60 kHz

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for inverter motor drive applications

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation
(including diode and IGBT)

CES

C

CM

LM

F

FM

GE

ISOL

P

D

TC = 25 °C 12

= 100 °C 5

T

C

TC = 100 °C 5

Any terminal to case, t = 1 min 2500

TC = 25 °C 76

T

= 100 °C 31

C

1200 V

24

24

12

± 20

A

V

W

Document Number: 93912 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]

, [e-mail], [e-mail] 1

GB05XP120KTPbF

Vishay Semiconductors

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 5 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coefficient of V

(BR)CES

V

(BR)CES

(BR)CES

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

V

GE(th)

Forward transconductance g

Collector to emitter leaking current I

Diode forward voltage drop V

Gate to emitter leakage current I

CE(on)

GE(th)

fe

CES

FM

GES

VGE = 0 V, IC = 250 μA 1200 - - V

/TJVGE = 0 V, IC = 1 mA (25 °C to 125 °C) - 1.14 - V/°C

VGE = 15 V, IC = 6 A - 2.90 3.17

V

= 15 V, IC = 12 A - 4.04 4.46

GE

= 15 V, IC = 6 A, TJ = 125 °C - 3.45 3.60

V

GE

= 15 V, IC = 12 A, TJ = 125 °C - 5.07 5.32

V

GE

IC = 250 μA 4 - 6

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C

VCE = 25 V, IC = 6 A - 3.2 - S

VGE = 0 V, VCE = 1200 V - - 250

V

= 0 V, VCE = 1200 V, TJ = 125 °C - - 1000

GE

IF = 6 A, VGE = 0 V - 2.33 2.77

= 12 A, VGE = 0 V - 3.01 3.63

I

F

= 6 A, VGE = 0 V, TJ = 125 °C - 2.55 2.98

I

F

= 12 A, VGE = 0 V, TJ = 125 °C - 3.45 4.07

I

F

VGE = ± 20 V - - ± 250 nA

V

μA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

g

ge

gc

on

off

tot

on

off

tot

d(on)

r

d(off)

f

Reverse BIAS safe operating area RBSOA

Short circuit safe operating area SCSOA

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery energy E

Diode reverse recovery time t

Diode peak reverse current I

ies

oes

res

rec

rr

rr

IC = 6 A

= 600 V

V

CC

= 15 V

V

GE

IC = 6 A, VCC = 600 V, VGE = 15 V
R

= 10 , L = 2.0 mH, TJ = 25 °C

g

Energy losses include tail and
diode reverse recovery

IC = 6 A, VCC = 600 V, VGE = 15 V
R

= 10 , L = 2.0 mH, TJ = 125 °C

g

Energy losses include tail and
diode reverse recovery

IC = 6 A, VCC = 600 V, VGE = 15 V
L = 2.0 mH, L

= 10 , TJ = 125 °C

R

g

= 150 °C, IC = 24 A

T

J

R

= 10 , VGE = 15 V to 0

g

V

= 600 V, VGE = + 15 V to 0

CC

T

= 150 °C, VP = 1200 V, Rg = 10 

J

= 100 nH

S

VGE = 0 V

= 30 V

V

CC

f = 1 MHz

IC = 6 A, VCC = 600 V, VGE = 15 V
L = 2.0 mH, L
R

= 10 , TJ = 125 °C

g

= 100 nH

S

-2741

-3.75.6

nCGate to emitter charge (turn-on) Q

-1421

- 0.606 0.909

- 0.340 0.510

mJTurn-off switching loss E

- 0.946 1.420

- 0.779 1.170

- 0.403 0.605

mJTurn-off switching loss E

- 1.182 1.775

-4771

-1726

- 99 150

ns

- 362 543

Fullsquare

10 - - μs

- 369 554

- 244 366

pFOutput capacitance C

-1218

- 334 - μJ

-54-ns

-17- A

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93912
2 [e-mail]

, [e-mail], [e-mail] Revision: 03-Aug-10

R

0

R

1

-------



1

T

0

------

1

T

1

------

–





exp=

0246810

0

5

10

15

20

Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V

Vce (V)

Ice (A)

GB05XP120KTPbF

Three Phase Inverter Module in MTP Package

Vishay Semiconductors

1200 V NPT IGBT and HEXFRED® Diodes, 5 A

THERMISTOR SPECIFICATIONS (T CODE ONLY)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Resistance R

Sensitivity index of the
thermistor material

0

(1)(2)



Notes

(1)

T0, T1 are thermistor´s temperatures

(2)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction
temperature range

Storage temperature range T

Junction to case

IGBT

Case to sink per module R

Mounting torque --4Nm

Weight -65- g

R

T

J

Stg

thJC

thCS

T0 = 25 °C - 30 - k

T0 = 25 °C

= 85 °C

T

1

- 4000 - K

- 40 - 150
°C

- 40 - 125

- - 2.68

°C/WDiode --4.2

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

20

15

10

Ice (A)

5

0

Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V

0246

Vce (V)

Fig. 1 - Typical Output Characteristics

T

= 25 °C

J

Fig. 2 - Typical Output Characteristics

TJ = 125 °C

Document Number: 93912 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]

, [e-mail], [e-mail] 3

GB05XP120KTPbF

5101520

0

5

10

15

20

I

ce=3A

I

ce=6A

I

ce=12A

Vge (V)

Vce (V)

Ic (A)

Energy (mJ)

36912

0

500

1000

1500

2000

2500

E

TOT

E

ON

E

OFF

Rg ( )

Energy (mJ)

0 1020304050

200

500

800

1100

1400

E

TOT

E

OFF

E

ON

0 1020304050

10

100

1000

Rg ( )

Swiching Time (ns)

t

F

td

OFF

td

ON

t

R

Vishay Semiconductors

Fig. 3 - Typical VCE vs. V

20

15

10

Vce (V)

TJ = 25 °C

ce=3A

I

ce=6A

I

ce=12A

I

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 5 A

1000

Swiching Time (ns)

GE

t

F

td

OFF

100

td

ON

10

t

R

1

36912

Ic (A)

Fig. 6 - Typical Switching Time vs. I

TJ = 125 °C, L = 2 mH, VCE = 600 V

R

= 10 ; VGE = 15 V

g

C

5

0

5101520

Vge (V)

Fig. 4 - Typical V

TJ = 125 °C

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93912
4 [e-mail]

Fig. 5 - Typical Energy Loss vs. I

TJ = 125 °C, L = 2 mH, VCE = 600 V

R

= 10 ; VGE = 15 V

g

CE

vs. V

GE

Fig. 7 - Typical Energy Loss vs. R
TJ = 125 °C, L = 2 mH, VCE = 600 V

I

= 6 A; VGE = 15 V

C

C

Fig. 8 - Typical Switching Time vs. R

TJ = 125 °C, L = 2 mH, VCE = 600 V

I

= 6 A; VGE = 15 V

C

g

g

, [e-mail], [e-mail] Revision: 03-Aug-10

010203040

10

100

1000

Vce (V)

Capacitance (pF)

Cies

Coes

Cres

QG, Total Gate Charge (nC)

0 5 10 15 20 25 30

0

2

4

6

8

10

12

14

16

600V

V

GE

(V)

04080120160

0

3

6

9

12

15

Ic (A)

Tc (°C)

04080120160

0

10

20

30

40

50

Tc (°C)

Ptot (W)

GB05XP120KTPbF

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 5 A

Fig. 9 - Typical Capacitance vs. V

VGE = 0 V; f = 1 MHz

CE

Vishay Semiconductors

Fig. 12 - Power Dissipation vs. Case Temperature

(IGBT only)

100

10

Fig. 10 - Typical Gate Charge vs. V

ICE = 5 A

Fig. 11 - Maximum DC Collector Current vs.

GE

Case Temperature

20 µs

1

Ic (A)

0.1

0.01
1 10 100 1000 10000

Vce (V)

100 µs

1 ms

DC

Fig. 13 - Forward SOA
T

= 25 °C, TJ 150 °C

C

100

10

Ic (A)

1

10 100 1000 10000

Vce (V)

Fig. 14 - Reverse BIAS SOA

T

= 150 °C, VGE = 15 V

J

Document Number: 93912 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]

, [e-mail], [e-mail] 5

GB05XP120KTPbF

0481216

0

10

20

30

40

50

Vge (V)

Ice (A)

Tj = 25°C
Tj = 125°C

2 4 6 8 10 12 14 16

6

11

16

21

26

If (A)

Irr (A)

Rg=4.7

Ω

Rg=

10

Ω

Rg=

22Ω

Rg=47

Ω

300360420480

9

11

13

15

17

19

dif/dt (A/µs)

Irr (A)

Vishay Semiconductors

Fig. 15 - Typical Transfer Characteristics

20

15

V

= 50 V; tp = 10 μs

CE

Tj = 25°C

Tj = 125°C

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 5 A

Fig. 17 - Typical Diode I

TJ = 125 °C

19

17

vs. I

rr

F

15

10

If (A)

5

0

012345

Vf (V)

Fig. 16 - Typical Diode Forward Characteristics

t

= 80 μs

p

Fig. 19 - Typical Diode I

V

= 15 V; ICE = 10 A, TJ = 125 °C

GE

vs. dIF/dt; VCC = 600 V;

rr

Irr (A)

13

11

9

0 1020304050

Rg ( )

Fig. 18 - Typical Diode I

TJ = 125 °C; IF = 10 A

vs. R

rr

g

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93912
6 [e-mail]

, [e-mail], [e-mail] Revision: 03-Aug-10

τ

1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

0.01

0.1

1

10

SINGLE PULSE
(THERMAL RESPONSE)

0.5

0.3

0.1

0.05

0.02

0.01

Ri (°C/W)

1.684

1.683

0.833

τ

i (sec)

0.001077

0.020815

0.040397

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + tc

t1 , Rectangular Pulse Duration (sec)

Thermal Response (Zth

JC

)

τ

J

τ

1

τ

1

τ

2

τ

2

τ

3

τ

3

R

1

R

1

R

2

R

2

R

3

R

3

Ci= τi/Ri

GB05XP120KTPbF

Three Phase Inverter Module in MTP Package

Vishay Semiconductors

1200 V NPT IGBT and HEXFRED® Diodes, 5 A

10

)

JC

0.5

1

0.3

R

R

1

R

0.1

0.05

0.1

0.02

0.01

Thermal Response (Zth

SINGLE PULSE
(THERMAL RESPONSE)

J

τ

1

τ

Ci= τi/Ri

1

1

0.01
1E-05 1E-04 1E-03 1E-02 1E-01 1E+00

t1 , Rectangular Pulse Duration (sec)

Fig. 20 - Maximum Transient Thermal Impedance, Junction to Case (IGBT)

R

2

3

R

2

τ

2

τ

2

Ri (°C/W)

R

3

τ

3

0.660

0.536

τ

3

1.483

Notes:

1. Duty Factor D = t1/t2

2. Peak Tj = P dm x Zthjc + tc

τ

0.00037

0.001664

0.037405

i (sec)

Fig. 21 - Maximum Transient Thermal Impedance, Junction to Case (Diode)

Document Number: 93912 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]

, [e-mail], [e-mail] 7

GB05XP120KTPbF

1 - IGBT module

2

- Nominal current rating (05 = 5 A)

3

- Circuit configuration (XP = Sixpack MTP package)

4

- Voltage code (120 = 1200 V)

5

- Speed/type (K = Ultrafast IGBT/inverter motor drive application)

6

- Special option:

None = No special option

T = Thermistor

7

- PbF = Lead (Pb)-free

Device code

51324

67

GB 05 XP 120 K T PbF

13

7

1

2

8

9

5

6

10

3

4

11

12

Vishay Semiconductors

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 5 A

ORDERING INFORMATION TABLE

CIRCUIT CONFIGURATION

LINKS TO RELATED DOCUMENTS

Dimensions www.vishay.com/doc?95175

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93912
8 [e-mail]

, [e-mail], [e-mail] Revision: 03-Aug-10

DIMENSIONS in millimeters

Ø 1.1Ø 5

3.5

33

31.8

12 ± 0.5

4

20.5

2.5

876543

2

1

13

9

10 11

12

1.8

8.1

45°

5.4 ± 0.1

5.7 ± 0.1

1.2 ± 0.1

7.2 ± 0.1

7.8 ± 0.1

3 ± 0.1

27.5

11.35

± 0.1

11.35

± 0.1

R2.6 (x 3)

R5.8 (x 2)

8.7 ± 0.1

6 ± 0.1

3 ± 0.1

8.5 ± 0.1

39.5 ± 0.1

44.5

48.7

63.5 ± 0.25

1.3

Outline Dimensions

Vishay Semiconductors

MTP

Note

• Unused terminals are not assembled in the package

Document Number: 95175 For technical questions, contact: [e-mail]
Revision: 18-Mar-08 1

www.vishay.com

Legal Disclaimer Notice

www.vishay.com

Vishay

Disclaimer

ALL PRODUCT, PRODUCT SPECIFICATIONS AND DATA ARE SUBJECT TO CHANGE WITHOUT NOTICE TO IMPROVE
RELIABILITY, FUNCTION OR DESIGN OR OTHERWISE.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf (collectively,
“Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained in any datasheet or in any other
disclosure relating to any product.

Vishay makes no warranty, representation or guarantee regarding the suitability of the products for any particular purpose or
the continuing production of any product. To the maximum extent permitted by applicable law, Vishay disclaims (i) any and all
liability arising out of the application or use of any product, (ii) any and all liability, including without limitation special,
consequential or incidental damages, and (iii) any and all implied warranties, including warranties of fitness for particular
purpose, non-infringement and merchantability.

Statements regarding the suitability of products for certain types of applications are based on Vishay’s knowledge of typical
requirements that are often placed on Vishay products in generic applications. Such statements are not binding statements
about the suitability of products for a particular application. It is the customer’s responsibility to validate that a particular
product with the properties described in the product specification is suitable for use in a particular application. Parameters
provided in datasheets and/or specifications may vary in different applications and performance may vary over time. All
operating parameters, including typical parameters, must be validated for each customer application by the customer’s
technical experts. Product specifications do not expand or otherwise modify Vishay’s terms and conditions of purchase,
including but not limited to the warranty expressed therein.

Except as expressly indicated in writing, Vishay products are not designed for use in medical, life-saving, or life-sustaining
applications or for any other application in which the failure of the Vishay product could result in personal injury or death.
Customers using or selling Vishay products not expressly indicated for use in such applications do so at their own risk. Please
contact authorized Vishay personnel to obtain written terms and conditions regarding products designed for such applications.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this document or by
any conduct of Vishay. Product names and markings noted herein may be trademarks of their respective owners.

Material Category Policy

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as RoHS-Compliant fulfill the
definitions and restrictions defined under Directive 2011/65/EU of The European Parliament and of the Council
of June 8, 2011 on the restriction of the use of certain hazardous substances in electrical and electronic equipment
(EEE) - recast, unless otherwise specified as non-compliant.

Please note that some Vishay documentation may still make reference to RoHS Directive 2002/95/EC. We confirm that
all the products identified as being compliant to Directive 2002/95/EC conform to Directive 2011/65/EU.

Vishay Intertechnology, Inc. hereby certifies that all its products that are identified as Halogen-Free follow Halogen-Free
requirements as per JEDEC JS709A standards. Please note that some Vishay documentation may still make reference
to the IEC 61249-2-21 definition. We confirm that all the products identified as being compliant to IEC 61249-2-21
conform to JEDEC JS709A standards.

Revision: 02-Oct-12

1

Document Number: 91000