C&H Technology GB05XP120KTPbF User Manual

6121 Baker Road,
Suite 108
Minnetonka, MN 55345

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C & H TECHNOLOGY, INC. ● 6121 BAKER RD. SUITE 108 ● MINNETONKA, MINNESOTA 55345 ●

800-274-4284 ● 952-933-6190 ● FAX: [phone] ● WWW.CHTECHNOLOGY.COM

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED

MTP

PRODUCT SUMMARY

V

CES

typical at VGE = 15 V 2.90 V

V

CE(on)

at TC = 100 °C 5 A

I

C

at TJ = 150 °C > 10 μs

t

sc

1200 V

GB05XP120KTPbF

Vishay Semiconductors

®

Diodes, 5 A

FEATURES

• Generation 5 NPT 1200 V IGBT technology

•HEXFRED® diode with ultrasoft reverse
recovery

• Very low conduction and switching losses

• Optional SMT thermistor (NTC)

• Aluminum oxide DBC

• Very low stray inductance design for high speed operation

• Short circuit 10 μs

• Square RBSOA

• Operating frequencies 8 kHz to 60 kHz

• UL approved file E78996

• Compliant to RoHS directive 2002/95/EC

• Designed and qualified for industrial level

BENEFITS

• Optimized for inverter motor drive applications

• Low EMI, requires less snubbing

• Direct mounting to heatsink

• PCB solderable terminals

• Very low junction to case thermal resistance

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Diode continuous forward current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation
(including diode and IGBT)

CES

C

CM

LM

F

FM

GE

ISOL

P

D

TC = 25 °C 12

= 100 °C 5

T

C

TC = 100 °C 5

Any terminal to case, t = 1 min 2500

TC = 25 °C 76

T

= 100 °C 31

C

1200 V

24

24

12

± 20

A

V

W

Document Number: 93912 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]

, [e-mail], [e-mail] 1

GB05XP120KTPbF

Vishay Semiconductors

Three Phase Inverter Module in MTP Package

1200 V NPT IGBT and HEXFRED® Diodes, 5 A

ELECTRICAL SPECIFICATIONS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Temperature coefficient of V

(BR)CES

V

(BR)CES

(BR)CES

Collector to emitter voltage V

Gate threshold voltage V

Temperature coefficient of
threshold voltage

V

GE(th)

Forward transconductance g

Collector to emitter leaking current I

Diode forward voltage drop V

Gate to emitter leakage current I

CE(on)

GE(th)

fe

CES

FM

GES

VGE = 0 V, IC = 250 μA 1200 - - V

/TJVGE = 0 V, IC = 1 mA (25 °C to 125 °C) - 1.14 - V/°C

VGE = 15 V, IC = 6 A - 2.90 3.17

V

= 15 V, IC = 12 A - 4.04 4.46

GE

= 15 V, IC = 6 A, TJ = 125 °C - 3.45 3.60

V

GE

= 15 V, IC = 12 A, TJ = 125 °C - 5.07 5.32

V

GE

IC = 250 μA 4 - 6

/TJVCE = VGE, IC = 1 mA (25 °C to 125 °C) - - 10 - mV/°C

VCE = 25 V, IC = 6 A - 3.2 - S

VGE = 0 V, VCE = 1200 V - - 250

V

= 0 V, VCE = 1200 V, TJ = 125 °C - - 1000

GE

IF = 6 A, VGE = 0 V - 2.33 2.77

= 12 A, VGE = 0 V - 3.01 3.63

I

F

= 6 A, VGE = 0 V, TJ = 125 °C - 2.55 2.98

I

F

= 12 A, VGE = 0 V, TJ = 125 °C - 3.45 4.07

I

F

VGE = ± 20 V - - ± 250 nA

V

μA

V

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate to collector charge (turn-on) Q

Turn-on switching loss E

Total switching loss E

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

g

ge

gc

on

off

tot

on

off

tot

d(on)

r

d(off)

f

Reverse BIAS safe operating area RBSOA

Short circuit safe operating area SCSOA

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery energy E

Diode reverse recovery time t

Diode peak reverse current I

ies

oes

res

rec

rr

rr

IC = 6 A

= 600 V

V

CC

= 15 V

V

GE

IC = 6 A, VCC = 600 V, VGE = 15 V
R

= 10 , L = 2.0 mH, TJ = 25 °C

g

Energy losses include tail and
diode reverse recovery

IC = 6 A, VCC = 600 V, VGE = 15 V
R

= 10 , L = 2.0 mH, TJ = 125 °C

g

Energy losses include tail and
diode reverse recovery

IC = 6 A, VCC = 600 V, VGE = 15 V
L = 2.0 mH, L

= 10 , TJ = 125 °C

R

g

= 150 °C, IC = 24 A

T

J

R

= 10 , VGE = 15 V to 0

g

V

= 600 V, VGE = + 15 V to 0

CC

T

= 150 °C, VP = 1200 V, Rg = 10 

J

= 100 nH

S

VGE = 0 V

= 30 V

V

CC

f = 1 MHz

IC = 6 A, VCC = 600 V, VGE = 15 V
L = 2.0 mH, L
R

= 10 , TJ = 125 °C

g

= 100 nH

S

-2741

-3.75.6

nCGate to emitter charge (turn-on) Q

-1421

- 0.606 0.909

- 0.340 0.510

mJTurn-off switching loss E

- 0.946 1.420

- 0.779 1.170

- 0.403 0.605

mJTurn-off switching loss E

- 1.182 1.775

-4771

-1726

- 99 150

ns

- 362 543

Fullsquare

10 - - μs

- 369 554

- 244 366

pFOutput capacitance C

-1218

- 334 - μJ

-54-ns

-17- A

www.vishay.com For technical questions within your region, please contact one of the following: Document Number: 93912
2 [e-mail]

, [e-mail], [e-mail] Revision: 03-Aug-10

R

0

R

1

-------



1

T

0

------

1

T

1

------

–





exp=

0246810

0

5

10

15

20

Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V

Vce (V)

Ice (A)

GB05XP120KTPbF

Three Phase Inverter Module in MTP Package

Vishay Semiconductors

1200 V NPT IGBT and HEXFRED® Diodes, 5 A

THERMISTOR SPECIFICATIONS (T CODE ONLY)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

(1)

Resistance R

Sensitivity index of the
thermistor material

0

(1)(2)



Notes

(1)

T0, T1 are thermistor´s temperatures

(2)

THERMAL AND MECHANICAL SPECIFICATIONS

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Operating junction
temperature range

Storage temperature range T

Junction to case

IGBT

Case to sink per module R

Mounting torque --4Nm

Weight -65- g

R

T

J

Stg

thJC

thCS

T0 = 25 °C - 30 - k

T0 = 25 °C

= 85 °C

T

1

- 4000 - K

- 40 - 150
°C

- 40 - 125

- - 2.68

°C/WDiode --4.2

Heatsink compound thermal conductivity = 1 W/mK - 0.06 -

20

15

10

Ice (A)

5

0

Vge=18V
Vge=15V
Vge=12V
Vge=10V
Vge=8V

0246

Vce (V)

Fig. 1 - Typical Output Characteristics

T

= 25 °C

J

Fig. 2 - Typical Output Characteristics

TJ = 125 °C

Document Number: 93912 For technical questions within your region, please contact one of the following: www.vishay.com
Revision: 03-Aug-10 [e-mail]

, [e-mail], [e-mail] 3