C&H Technology GA75TS12UPbF User Manual

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INT-A-PAK

Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 75 A

FEATURES

• Generation 4 IGBT technology

• Ultrafast: Optimized for high operating
frequencies 8 to 40 kHz in hard switching,
> 200 kHz in resonant mode

• Very low conduction and switching losses

• HEXFRED

• Industry standard package

• UL approved

• Totally lead (Pb)-free

• Designed and qualified for industrial level

®

antiparallel diodes with ultrasoft recovery

GA75TS120UPbF

RoHS

COMPLIANT

PRODUCT SUMMARY

V

CES

I

DC 110 A

C

at 75 A, 25 °C 2.5 V

V

CE(on)

1200 V

BENEFITS

• Increased operating efficiency

• Direct mounting to heatsink

• Performance optimized for power conversion: UPS,
SMPS, welding

• Lower EMI, requires less snubbing

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter voltage V

Continuous collector current I

Pulsed collector current I

Peak switching current I

Peak diode forward current I

Gate to emitter voltage V

RMS isolation voltage V

Maximum power dissipation P

Operating junction temperature range T

Storage temperature range T

CES

C

CM

LM

FM

GE

ISOL

D

J

Stg

TC = 25 °C 110

= 76 °C 75

T

C

Repetitive rating; VGE = 20 V, pulse width
limited by maximum junction temperature

See fig. 17 150

Any terminal to case, t = 1 min 2500

TC = 25 °C 390

T

= 85 °C 200

C

1200 V

150

150

± 20

- 40 to + 150

- 40 to + 125

A

V

W

°C

Document Number: 94427 For technical questions, contact: [e-mail]
Revision: 18-Jan-08 1

www.vishay.com

GA75TS120UPbF

Vishay High Power Products

"Half-Bridge" IGBT INT-A-PAK

(Ultrafast Speed IGBT), 75 A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Gate threshold voltage V

Temperature coefficient of threshold voltage ΔV

Forward transconductance g

Collector to emitter leaking current I

Diode forward voltage V

Gate to emitter leakage current I

(BR)CES

CE(on)

GE(th)

GE(th)

fe

CES

F

GES

/ΔT

DYNAMIC CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

dI

Q

Q

t

d(on)

d(off)

E

E

off

ts

(rec)M

oes

res

g

ge

gc

r

f

on

(1)

(1)

ies

rr

rr

rr

Total gate charge (turn-on)

Gate to emitter charge (turn-on)

Gate to collector charge (turn-on) Q

Turn-on delay time

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching energy

Turn-off switching energy

Total switching energy E

Input capacitance C

Reverse transfer capacitance C

Diode reverse recovery time t

Diode peak reverse current I

Diode recovery charge Q

Diode peak rate of fall of recovery during t

b

VGE = 0 V, IC = 1 mA 1200 - -

VGE = 15 V, IC = 75 A - 2.5 3.7

I

= 75 A, VGE = 15 V, TJ = 125 °C - 2.25 3.3

C

VCE = 6.0 V, IC = 750 µA

J

VCE = 25 V, IC = 75 A
Pulse width 50 µs, single shot

3.0 4.5 6.0

-- 14-mV/°C

- 107 - S

VGE = 0 V, VCE = 1200 V - 0.03 1.0

V

= 0 V, VCE = 1200 V, TJ = 125 °C - 4.3 10

GE

VGE = 0 V, IF = 75 A - 3 3.6

I

= 75 A, VGE = 0 V, TJ = 125 °C - 2.83 3.3

F

VGE = ± 20 V - - 250 nA

- 570 854

VCC = 400 V
I

= 85 A

C

- 96 144

- 189 283

- 453 -

RG1 = 15 Ω

= 0 Ω

R

G2

I

= 75 A

C

V

= 720 V

CC

= ± 15 V

V

GE

Inductor load

= 125 °C

T

J

VGE = 0 V
V

= 30 V

CC

ƒ = 1 MHz

RG1 = 15 Ω
R

= 0 Ω

G2

= 75 A

I

C

V

= 720 V

/dt - 1491 - A/µs

CC

dI/dt = 1300 A/µs

-70-

- 415 -

- 661 -

-8-

-11-

-1932

- 12 815 -

- 570 -

- 110 -

- 174 - ns

- 107 - A

- 9367 - nC

VCollector to emitter voltage V

mA

V

nC

ns

mJ

pFOutput capacitance C

Note

(1)

Repetitive rating; VGE = 20 V, pulse width limited by maximum junction temperature

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94427

2 Revision: 18-Jan-08