C&H Technology GA200SA60SP User Manual

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SOT-227

PRODUCT SUMMARY

V

CES

V

(typical) 1.10 V

CE(on)

V

GE

I

C

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Standard Speed IGBT), 100 A

FEATURES

C

G

E

n-channel

600 V

15 V

100 A

• Standard: Optimized for minimum saturation
voltage and low operating frequencies up to 1 kHz

• Lowest conduction losses available

• Fully isolated package (2500 V

• Very low internal inductance (5 nH typical)

• Industry standard outline

• UL pending

• Completely lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

GA200SA60SP

RoHS

AC

)

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped Inductive load current I

Gate to emitter voltage V

Reverse voltage avalanche energy E

RMS isolation voltage V

Maximum power dissipation P

Operating junction and storage
temperature range

Mounting torque 6-32 or M3 screw 12 (1.3) lbf ⋅ in (N ⋅ m)

CES

C

CM

LM

GE

ARV

ISOL

T

, T

J

TC = 25 °C 200

T

= 100 °C 100

C

Repetitive rating; VGE = 20 V, pulse width limited
by maximum junction temperature
See fig. 15

VCC = 80 % (V
L = 10 µH, R
See fig. 14

Repetitive rating; pulse width limited by
maximum junction temperature

Any terminal to case, t = 1 min 2500 V

TC = 25 °C 630

D

T

= 100 °C 250

C

Stg

), VGE = 20 V,

CES

= 2.0 Ω,

G

600 V

400

400

± 20 V

155 mJ

W

- 55 to + 150 °C

A

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case R

Case to sink, flat, greased surface R

Weight of module 30 - g

thJC

thCS

-0.20

0.05 -

°C/W

Document Number: 94363 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

www.vishay.com

GA200SA60SP

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Standard Speed IGBT), 100 A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Emitter to collector breakdown voltage

Temperature coeff. of breakdown voltage ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coeff. of threshold voltage ΔV

Forward transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

Notes

(1)

Pulse width ≤ 80 µs; duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs, single shot

(BR)CES

V

(BR)ECS

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.62 - V/°C

(BR)CES

CE(on)

GE(th)

/ΔT

GE(th)

(2)

fe

CES

GES

VGE = 0 V, IC = 250 µA 600 - -

(1)

VGE = 0 V, IC = 1.0 A 18 - -

IC = 100 A

V

= 15 V

I

= 200 A - 1.33 -

C

I

= 100 A, TJ = 150 °C - 1.02 -

C

GE

See fig. 2, 5

- 1.10 1.3

VCE = VGE, IC = 250 µA 3.0 - 6.0

VCE = VGE, IC = 2 mA - - 10 - mV/°C

J

VCE = 100 V, IC = 100 A 90 150 - S

VGE = 0 V, VCE = 600 V - - 1.0

V

= 0 V, VCE = 10 V, TJ = 150 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

V

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

ge

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

E

ies

oes

res

g

IC = 100 A

= 400 V

V

CC

= 15 V; See fig. 8

V

GE

TJ = 25 °C

= 100 A

I

C

= 480 V

V

CC

= 15 V

V

GE

= 2.0 Ω

R

G

Energy losses include “tail”

See fig. 9, 10, 13

TJ = 150 °C

= 100 A, VCC = 480 V

I

C

= 15 V, RG = 2.0 Ω

V

GE

Energy losses include “tail”

See fig. 10, 11, 13

Between lead, and center of
the die contact

VGE = 0 V
V

= 30 V

CC

ƒ = 1.0 MHz; See fig. 7

- 770 1200

- 100 150

nCGate emitter charge (turn-on) Q

- 260 380

-78-

-56-

- 890 1300

ns

- 390 580

-0.98-

- 17.4 -

mJTurn-off switching loss E

- 18.4 25.5

-72-

-60-

-1500-

ns

-660-

- 35.7 - mJ

-5.0- nH

- 16 250 -

-1040-

pFOutput capacitance C

-190-

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94363

2 Revision: 29-Apr-08