C&H Technology GA200SA60SP User Manual

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SOT-227

PRODUCT SUMMARY

V

CES

V

(typical) 1.10 V

CE(on)

V

GE

I

C

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Standard Speed IGBT), 100 A

FEATURES

C

G

E

n-channel

600 V

15 V

100 A

• Standard: Optimized for minimum saturation
voltage and low operating frequencies up to 1 kHz

• Lowest conduction losses available

• Fully isolated package (2500 V

• Very low internal inductance (5 nH typical)

• Industry standard outline

• UL pending

• Completely lead (Pb)-free

• Designed and qualified for industrial level

BENEFITS

• Designed for increased operating efficiency in power
conversion: UPS, SMPS, welding, induction heating

• Easy to assemble and parallel

• Direct mounting to heatsink

• Plug-in compatible with other SOT-227 packages

GA200SA60SP

RoHS

AC

)

COMPLIANT

ABSOLUTE MAXIMUM RATINGS

PARAMETER SYMBOL TEST CONDITIONS MAX. UNITS

Collector to emitter breakdown voltage V

Continuous collector current I

Pulsed collector current I

Clamped Inductive load current I

Gate to emitter voltage V

Reverse voltage avalanche energy E

RMS isolation voltage V

Maximum power dissipation P

Operating junction and storage
temperature range

Mounting torque 6-32 or M3 screw 12 (1.3) lbf ⋅ in (N ⋅ m)

CES

C

CM

LM

GE

ARV

ISOL

T

, T

J

TC = 25 °C 200

T

= 100 °C 100

C

Repetitive rating; VGE = 20 V, pulse width limited
by maximum junction temperature
See fig. 15

VCC = 80 % (V
L = 10 µH, R
See fig. 14

Repetitive rating; pulse width limited by
maximum junction temperature

Any terminal to case, t = 1 min 2500 V

TC = 25 °C 630

D

T

= 100 °C 250

C

Stg

), VGE = 20 V,

CES

= 2.0 Ω,

G

600 V

400

400

± 20 V

155 mJ

W

- 55 to + 150 °C

A

THERMAL RESISTANCE

PARAMETER SYMBOL TYP. MAX. UNITS

Junction to case R

Case to sink, flat, greased surface R

Weight of module 30 - g

thJC

thCS

-0.20

0.05 -

°C/W

Document Number: 94363 For technical questions, contact: [e-mail]
Revision: 29-Apr-08 1

www.vishay.com

GA200SA60SP

Vishay High Power Products

Insulated Gate Bipolar Transistor

(Standard Speed IGBT), 100 A

ELECTRICAL CHARACTERISTICS (TJ = 25 °C unless otherwise noted)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Collector to emitter breakdown voltage V

Emitter to collector breakdown voltage

Temperature coeff. of breakdown voltage ΔV

Collector to emitter saturation voltage V

Gate threshold voltage V

Temperature coeff. of threshold voltage ΔV

Forward transconductance g

Zero gate voltage collector current I

Gate to emitter leakage current I

Notes

(1)

Pulse width ≤ 80 µs; duty factor ≤ 0.1 %

(2)

Pulse width 5.0 µs, single shot

(BR)CES

V

(BR)ECS

/ΔTJVGE = 0 V, IC = 1.0 mA - 0.62 - V/°C

(BR)CES

CE(on)

GE(th)

/ΔT

GE(th)

(2)

fe

CES

GES

VGE = 0 V, IC = 250 µA 600 - -

(1)

VGE = 0 V, IC = 1.0 A 18 - -

IC = 100 A

V

= 15 V

I

= 200 A - 1.33 -

C

I

= 100 A, TJ = 150 °C - 1.02 -

C

GE

See fig. 2, 5

- 1.10 1.3

VCE = VGE, IC = 250 µA 3.0 - 6.0

VCE = VGE, IC = 2 mA - - 10 - mV/°C

J

VCE = 100 V, IC = 100 A 90 150 - S

VGE = 0 V, VCE = 600 V - - 1.0

V

= 0 V, VCE = 10 V, TJ = 150 °C - - 10

GE

VGE = ± 20 V - - ± 250 nA

V

V

mA

SWITCHING CHARACTERISTICS (TJ = 25 °C unless otherwise specified)

PARAMETER SYMBOL TEST CONDITIONS MIN. TYP. MAX. UNITS

Total gate charge (turn-on) Q

Gate collector charge (turn-on) Q

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Turn-on switching loss E

Total switching loss E

Turn-on delay time t

Rise time t

Turn-off delay time t

Fall time t

Total switching loss E

Internal emitter inductance L

Input capacitance C

Reverse transfer capacitance C

ge

gc

d(on)

r

d(off)

f

on

off

ts

d(on)

r

d(off)

f

ts

E

ies

oes

res

g

IC = 100 A

= 400 V

V

CC

= 15 V; See fig. 8

V

GE

TJ = 25 °C

= 100 A

I

C

= 480 V

V

CC

= 15 V

V

GE

= 2.0 Ω

R

G

Energy losses include “tail”

See fig. 9, 10, 13

TJ = 150 °C

= 100 A, VCC = 480 V

I

C

= 15 V, RG = 2.0 Ω

V

GE

Energy losses include “tail”

See fig. 10, 11, 13

Between lead, and center of
the die contact

VGE = 0 V
V

= 30 V

CC

ƒ = 1.0 MHz; See fig. 7

- 770 1200

- 100 150

nCGate emitter charge (turn-on) Q

- 260 380

-78-

-56-

- 890 1300

ns

- 390 580

-0.98-

- 17.4 -

mJTurn-off switching loss E

- 18.4 25.5

-72-

-60-

-1500-

ns

-660-

- 35.7 - mJ

-5.0- nH

- 16 250 -

-1040-

pFOutput capacitance C

-190-

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94363

2 Revision: 29-Apr-08

GA200SA60SP

250

200

150

100

Load Current (A)

1000

100

50

0

0.1

TJ = 150 °C

Square wave:

60 % of rated
voltage

I

Ideal diodes

TJ = 25 °C

Insulated Gate Bipolar Transistor

(Standard Speed IGBT), 100 A

For both:

Duty cycle: 50 %

= 125 °C

T

J

= 90 °C

T

sink

Gate drive as specified
Power dissipation = 140 W

1 10 100

f - Frequency (kHz)

Fig. 1 - Typical Load Current vs. Frequency

(Load Current = I

of Fundamental)

RMS

200

150

100

Vishay High Power Products

Triangular wave:

I

Clamp voltage:
80 % of rated

10

VGE = 15 V

- Collector to Emitter Current (A)

C

I

1

0.5 1.0 1.5 2.0 2.5

20 µs pulse width

VCE - Collector to Emitter Voltage (V)

Fig. 2 - Typical Output Characteristics

1000

TJ = 150 °C

100

- Collector to Emitter Current (A)

C

I

10

567

TJ = 25 °C

VGE - Gate to Emitter Voltage (V)

Fig. 3 - Typical Transfer Characteristics

VCC = 50 V
5 µs pulse width

50

Maximum DC Collector Current (A)

0

25 50 75 100 125 150

TC - Case Temperature (°C)

Fig. 4 - Maximum Collector Current vs. Case Temperature

3

VGE = 15 V
80 µs pulse width

2

- Collector to Emitter Voltage (V)

CE

V

1

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

IC = 400 A

IC = 200 A

IC = 100 A

TJ - Junction Temperature (°C)

Fig. 5 - Typical Collector to Emitter Voltage vs.

Junction Temperature

Document Number: 94363 For technical questions, contact: [e-mail]

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Revision: 29-Apr-08 3

GA200SA60SP

Vishay High Power Products

1

0.1

0.01

Thermal Response

-

30 000

24 000

18 000

thJC

Z

0.001

0.00001 0.0001 0.001 0.01 0.1 1

C

ies

Single pulse

(thermal resistance)

Fig. 6 - Maximum Effective Transient Thermal Impedance, Junction to Case

VGE = 0 V, f = 1 MHz

= Cge + Cgc, Cce shorted

C

ies

= C

C

res

gc

C

= Cce + C

oes

gc

Insulated Gate Bipolar Transistor

(Standard Speed IGBT), 100 A

D = 0.50
D = 0.20
D = 0.10
D = 0.05
D = 0.02
D = 0.01

t1 - Rectangular Pulse Duration (s)

25

24

23

22

VCC = 480 V
V
T
I

C

Notes:

1. Duty factor D = t

2. Peak TJ = PDM x Z

GE

= 25 °C

J

= 200 A

= 15 V

P

DM

t

1

t

2

1/t2

+ T

thJC

C

C

12 000

C - Capacitance (pF)

6000

0

1 10 100

oes

C

res

VCE - Collector to Emitter Voltage (V)

Fig. 7 - Typical Capacitance vs.

Collector to Emitter Voltage

20

VCC = 400 V

= 100 A

I

C

16

12

8

4

- Gate to Emitter Voltage (V)

GE

V

0

0 200 400 600 800

QG - Total Gate Charge (nC)

Fig. 8 - Typical Gate Charge vs. Gate to Emitter Voltage

21

20

19

Total Switching Losses (mJ)

18

01020304050

RG - Gate Resistance (Ω)

Fig. 9 - Typical Switching Losses vs. Gate Resistance

1000

RG = 2.0 Ω

= 15 V

V

GE

= 480 V

V

CC

IC = 350 A

100

IC = 200 A

IC = 100 A

Total Switching Losses (mJ)

10

- 60 - 40 - 20 0 20 40 60 80 100 120 140 160

TJ - Junction Temperature (°C)

Fig. 10 - Typical Switching Losses vs.

Junction Temperature

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94363

4 Revision: 29-Apr-08

GA200SA60SP

Insulated Gate Bipolar Transistor

(Standard Speed IGBT), 100 A

160

RG = 2.0 Ω

= 150 °C

T

J

= 480 V

V

120

Total Switching Losses (mJ)

Fig. 11 - Typical Switching Losses vs. Collector Current

50 V

CC

= 15 V

V

GE

80

40

0

100 150 200 250 300 350

IC - Collector Current (A)

L

V

*

C

1000 V

121

D.U.T.

Vishay High Power Products

1000

VGE = 20 V

= 125 °C

T

100

10

- Collector Current (A)

C

I

0 - 480 V

2

J

Safe operating area

1

1 10 100 1000

VCE - Collector to Emitter Voltage (V)

Fig. 14 - Turn-Off SOA

4 x I

480 V

C

480 µF
960 V

RL ==

at 25 °C

* Driver same type as D.U.T.; V

Note: Due to the 50 V power supply, pulse width and inductor
will increase to obtain rated I

= 80 % of VCE (max)

C

d

Fig. 13a - Clamped Inductive Load Test Circuit

50 V

1000 V

1

* Driver same type as D.U.T., VC = 480 V

Fig. 14a - Switching Lost Test Circuit

Driver*

2

Fig. 13b - Pulsed Collector Current Test Circuit

I

C

L

V

C

D.U.T.

3

Document Number: 94363 For technical questions, contact: [e-mail]

www.vishay.com

Revision: 29-Apr-08 5

GA200SA60SP

Vishay High Power Products

1

2

3

V

C

90 %

10 %

5 %

I

C

Insulated Gate Bipolar Transistor

(Standard Speed IGBT), 100 A

90 %

10 %

t

d (off)

t

t

d (on)

r

E

on

Ets = (Eon + E

Fig. 14b - Switching Loss Waveforms

t

f

E

off

)

off

t = 5 µs

ORDERING INFORMATION TABLE

Device code

Dimensions http://www.vishay.com/doc?95036

Packaging information http://www.vishay.com/doc?95037

G A 200 S A 60 S P

51324678

1 - Insulated Gate Bipolar Transistor (IGBT)

2 - Generation 4, IGBT silicon, DBC construction

3 - Current rating (200 = 200 A)

4 - Single switch, no diode

5 - SOT-227

6 - Voltage rating (60 = 600 V)

7 - Speed/type (S = Standard speed)

8 - None = Standard production

P = Lead (Pb)-free

LINKS TO RELATED DOCUMENTS

www.vishay.com For technical questions, contact: [e-mail]

Document Number: 94363

6 Revision: 29-Apr-08

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Disclaimer

All product specifications and data are subject to change without notice.

Vishay Intertechnology, Inc., its affiliates, agents, and employees, and all persons acting on its or their behalf
(collectively, “Vishay”), disclaim any and all liability for any errors, inaccuracies or incompleteness contained herein
or in any other disclosure relating to any product.

Vishay disclaims any and all liability arising out of the use or application of any product described herein or of any
information provided herein to the maximum extent permitted by law. The product specifications do not expand or
otherwise modify Vishay’s terms and conditions of purchase, including but not limited to the warranty expressed
therein, which apply to these products.

No license, express or implied, by estoppel or otherwise, to any intellectual property rights is granted by this
document or by any conduct of Vishay.

The products shown herein are not designed for use in medical, life-saving, or life-sustaining applications unless
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Product names and markings noted herein may be trademarks of their respective owners.

Document Number: 91000 www.vishay.com
Revision: 18-Jul-08 1